Two-dimensional modelling of the metallization induced

Two-dimensional modelling of the metallization

induced recombinative losses for screen printed

solar cells

Authors:

Lejo J. Koduvelikulathu, Sara Olibet, Valentin D. Mihailetchi, Dominik Rudolph, Enrique Cabrera, Radovan Kopecek

Koduvelikulathu, Metallization Workshop, Konstanz: 07th-08th May-2013

Outline

Motivation

Experimental input

Modelling results

Conclusion

Outline

Motivation

Line & Contact

resistance losses

iVoc Voc

- Screen printed metallized cells

Recombination

losses

- Previous modelling studies

Emitter

Motivation

- Inclusion of the experimental metal-Si interface microstructures

Motivation

Modelling using Silvaco ATLAS TCAD simulation suite

M.Hilali, PhD. Dissertation,2005

Outline

Experimental input

The cell

110 µm front contacts

p-type Si; 2.5 Ω-cm

SiNx; ARC coating

n+ diffusion

Full Al- rear contact

Al-BSF

Diffusions & Pastes

n+ diffusions

Internal quantum efficiency

Beneath the fingers

Topography

Conductivity

Metal–Si interface microstructure

Koduvelikulathu, Metallization Workshop, Konstanz: 07th-08th May-2013 13

Etching beneath the metal finger

Experimental 4-pt

measurement

Few nm to 50 nm

Modelling parameters

SiNx-Si (Spas)

5x105 cm s-1

3x105 cm s-1

1x105 cm s-1

Assumed Parameter

Fitted Parameter

Metal-Si (Smet) : 1x107 cm s-1 Glass-Si (Sglass) : 1x106 cm s-1

Ohmic metal contacts

Outline

Modelling results

Presence of only Ag-crystallites

Majority of current transport through direct contacts – Cabrera et.al,JAP -vol 110, 11

Results

METAL BLOCK CRYSTALLITES Experiment

Results

CRYSTALLITES No Ag-Crystallites Experiment

Results

Crystallites Experiment No Ag-Crystallites

Presence of only Ag-crystallites

Negligible drop in Voc and pFF

Etching beneath the contact area

Results

50 Ω /sq

65 Ω /sq

95 Ω /sq

Junction depth

Results

50 Ω /sq

65 Ω /sq

95 Ω /sq

Junction depth

Results

50 Ω /sq

65 Ω /sq

95 Ω /sq

Junction depth

Etching beneath the contact area

Driving factor for the Voc and pFF losses

Deeper junction and not the sheet resistance

Increased SiNx beneath metal finger

Results

Without front

Metallization

losses

Paste A

Increased SiNx beneath metal finger

Higher SiNx presence, lower Voc and pFF loss

Presence of Ag- crystallites

Results

Etching beneath contact area

Results

Present model too sensitive to shunt scenarios

Presence of Ag- crystallites

Outline

Conclusion

Presented a novel model incorporating experimental metal-Si

microstructures

Ideal to have only small crystallite contacts without any emitter

etching

Si-etching during contact formation dominates the Voc and pFF

losses

Preferably localized opening of SiNx only where the current is

extracted

Model is more sensitive to shunts than experimentally observed

Acknowledgement

Thank You for Your Kind Attention

Acknowledges the EU commission & HIPERSOL consortium

Partly financially supported by EU within HIPERSOL: FP7- 228513

Two-dimensional modelling of the metallization induced

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