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Arno Smets
Thin-Film PV TechnologiesCIGS PV Technology
Week 5.3
NiA1
TCO (ZnO:Al)
CdS (n-type)
CuInSe2
(p-type)
Mo
Glass
MgF2
TCO (intrinsic ZnO)
CIGS
CIGSIV-semiconductors:
III-V semiconductors:
II-VI semiconductors
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
CIGSIV-semiconductors:
III-V semiconductors:
II-VI semiconductors
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
CuInSe2 Egap = 1.0 eV
CIGSIV-semiconductors:
III-V semiconductors:
II-VI semiconductors
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
CuInSe2 Egap = 1.0 eVCuInS2 Egap = 1.5 eV
CIGSIV-semiconductors:
III-V semiconductors:
II-VI semiconductors
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
CuInSe2 Egap = 1.0 eVCuInS2 Egap = 1.5 eVCuGaSe2 Egap = 1.7 eV
CIGS
Chen and Gong, PRB 75, 205209 (2007)
CIGS
Chen and Gong, PRB 75, 205209 (2007)
CIS: CuInSe2 Egap = 1.0 eV
CIGS
Chen and Gong, PRB 75, 205209 (2007)
CIS: CuInSe2 Egap = 1.0 eV
CuInxGa1-xSe2 Egap = 1.5 eV
CIGS
Chen and Gong, PRB 75, 205209 (2007)
CIS: CuInSe2 Egap = 1.0 eV
CuInxGa1-xSe2 Egap = 1.5 eV
x=0 CuGaSe2 Egap = 1.7 eV
CIGS
Chen and Gong, PRB 75, 205209 (2007)
CIS: CuInSe2 Egap = 1.0 eV
CuInxGa1-xSe2 Egap = 1.5 eV
x=0 CuGaSe2 Egap = 1.7 eV
x=1 CuInSe2 Egap = 1.0 eV
CIGS
Chen and Gong, PRB 75, 205209 (2007)
P-type
Cu deficiencies
CIGS solar cell
Glass
CIGS solar cell
Mo
Glass
CIGS solar cell
P-type CIGS
Mo
Glass
CIGS solar cell
CdS Buffer
P-type CIGS
Mo
Glass
CIGS solar cell
CdS Buffer
P-type CIGS
Mo
Glass
i-ZnO
CIGS solar cellAl-ZnO
CdS Buffer
P-type CIGS
Mo
Glass
i-ZnO
CI(G)S solar cell band diagram
3.3 eV
2.5 eV
1.1 eV
CIGSCdSi-ZnOn-ZnO
Ec
Ev
EF
ZnOCdS CIGS
CIGS solar cellAl-ZnO
CdS Buffer
P-type CIGS
Mo
Glass
i-ZnO
n-type CIGSCu(InGa)3Se5
Role Sodium in CIGS solar cellsAl-ZnO
CdS Buffer
P-type CIGS
Mo
Glass
i-ZnO
Sputtering deposition Co-evaporation
to vacuum pump
target material
material vapour
substrate
electron beam
Mo Cu,Ga,In,Se CdS ZnO1
Processing CIGS solar cells
Mo Cu,Ga,In,Se CdS ZnO1
2
Processing CIGS solar cells
Mo Cu,Ga,In,Se CdS ZnO1
2 3
Processing CIGS solar cells
Labscale CIGS solar cellsGlassNREL:
Eff = 19.9 %Voc ~ 700 mV
Jsc ~ 35-36 mAcm-2
FF = 81 %
Labscale CIGS solar cellsGlassNREL:
Eff = 19.9 %Voc ~ 700 mV
Jsc ~ 35-36 mAcm-2
FF = 81 %
FlexibleSFL-MS:Eff: 20.4 %
glass substrate
Mo back contact
glass substrate
Mo back contact
glass substrate
Mo back contact
CI(G)S absorber
CdS buffer layer
glass substrate
Mo back contact
glass substrate
Mo back contact
CI(G)S absorber
CdS buffer layer
glass substrate
Mo back contact
CI(G)S absorber
CdS buffer layer
i-ZnO/n-ZnO:Al window
aperture area
Module Efficiency
aperture area
total module area
Module Efficiency
Abundance,
ato
ms
of ele
ment
per
10
6ato
ms
of
Si
109
106
103
1
10-3
10-6
10 20 30 40 50 6
0
70 8
0
90
Rock-forming
elements
H
O
Na
Mg
Ai
Si
C
LiF
NB
Bc
PSCl
KCa Fe
Ti
Mn
ScV Cr
CoNi
CuZn
Ga
As
GeBr
Se
Mo
Nb
ZrSr
Rb
Ag
Cd
In
SbCs
I
Ba
HiIa
W
Pb
Ti
HgBi
Th
U
Ru
Rh
PdTe
Il
Re
Os
Ir
Pt
Au
Rarest
“metals”
Rare earth
elements
YLa
CoNd
GdSm
PrEu
Tb HoIm
I DyEr
Yb
CZTS (CuZnSnS)IV-semiconductors:
III-V semiconductors:
II-VI semiconductors
Rn
Xe
Kr
Ar
Ne
He
At
I
Br
Cl
F
Po
Te
Se
S
O
Bi
Sb
As
P
N
Pb
Sn
Ge
Si
C
Tl
In
Ga
Al
B
Hg
Cd
Zn
Au
Ag
Cu
VlllA
VllAVlAVAlVAlllVA
llBlB
2
10
18
36
34
86
9
17
35
53
85
8
16
34
52
84
7
15
33
51
83
6
14
32
50
82
5
13
31
49
81
30
48
80
29
47
97
4.003
20.183
39.948
83.80
131 30
(222)
35.453
79.909
126 904
(210)
18.998
32.064
78.96
127 60
(210)
15.999
30.974
74.922
121.75
208.980
14.007
28.086
72.59
118 69
207.19
12.011
26.982
69.72
204.37
10.811
65.37
112.40
200.59
63.54
107.870
196.967
114 82
CuZnSnS
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