TCAD: SUPREM,PISCESSUPREM, PISCESbandi.chungbuk.ac.kr/~ysk/devnot6.pdf · 2012. 1. 21. · TCAD:...

TCAD: SUPREM, PISCESTCAD SUPREM, PISCES

김 영 석

충북대학교 전자정보대학

2012.9.1

E il ki @ b kEmail: kimys@cbu.ac.kr

전자정보대학 김영석 1

TCADTCAD(Technology Computer Aided Design, Technology CAD)

Electronic design automation

Process CAD

M d l t (diff i I/I) > Si l t d iModels process steps (diffusion, I/I) => Simulates device structure (junction depth, doping profiles), e.g., SUPREM

Device CAD

Models devices based on fundamental physics (mobilities, doping profiles) => Simulates device behavior, e.g., PISCES

Ci it CADCircuit CAD

Compact Modeling of the device (not based on fundamental physics) => Simulates circuit behavior, e.g., SPICEp

전자정보대학 김영석 2

TCAD

From WikiDFM: Design For Manufacturing PSM: Phase Shift Masking

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DFM: Design For Manufacturing, PSM: Phase Shift MaskingCMP: Chemical Mechanical Planarization, STI: Shallow Trench Isolation

TCAD Work Flow

전자정보대학 김영석 4

http://www3.ntu.edu.sg/eee/eee6/LectureNotes/E425/index.htm

Process Simulation

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Process Simulation

ModelsInput- Grid Generation

OutputS / h- Diffusion

- OxidationI l t ti

- Grid Generation- Mask Definition- Structure Initialization

- Structure/Mesh- Doping profiles

Junction Depths- Implantation- Deposition/masking

- Process Step Spec.- Junction Depths

/masking/etching

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Process SimulatorsProcess flow simulators are tools which simulate the full semiconductor manufacturing flow

Process Simulators

SUPREM3: 1-D Standford UnivSUPREM3: 1-D, Standford Univ.

SUPREM4: 2-D

FEDSS: IBM

PROPHET: AT&T

DIOS: ISE (Swiss)

TSUPREM4: commertial, based on SUPREM4

TAURUS-PROCESS

ATHENA: commertial based on SUPREM4ATHENA: commertial, based on SUPREM4

FLOOPS: U. of Florida

Equipment Simulators

ILLUM2D/3D: the Institute for Microelectronics at the Technical University of Vienna, lithography

SPLAT/SAMPLE2D/3D PROLITH SOLID E ACESSPLAT/SAMPLE2D/3D, PROLITH, SOLID E, ACES

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http://www.iue.tuwien.ac.at/phd/minixhofer/node4.html

Summary of NMOS Process Flow

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TCAD InputLayout

P C ditiProcess Conditions

Diffusion: Temp., Pressure, Time, Flow Rates

Oxidation: Temp. Ramps, Gas RampsOxidation Temp. Ramps, Gas Ramps

Ion Implantation: Dose, Energy, Tilt, Revolving, Beam Div., Ionization Level

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NMOS Process Simulations with TSUPREM4

Mesh Generations

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NMOS Process Simulations with TSUPREM4

Oxidation

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NMOS Process Simulations with TSUPREM4

Nitride Deposition p s

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NMOS Process Simulations with TSUPREM4

Nitride Etch

전자정보대학 김영석 13

NMOS Process Simulations with TSUPREM4

Field Oxidation

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NMOS Process Simulations with TSUPREM4

Nitride Remove

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NMOS Process Simulations with TSUPREM4

Field Implant Profiles p s

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NMOS Process Simulations with TSUPREM4

VTH Adjust Implant Profiles j s p s

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NMOS Process Simulations with TSUPREM4

Before Gate Oxidation

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NMOS Process Simulations with TSUPREM4

Gate Oxidation

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NMOS Process Simulations with TSUPREM4

Polysilicon Gate Depositionys p s

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NMOS Process Simulations with TSUPREM4

Gate Poly Etch y

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NMOS Process Simulations with TSUPREM4

LDD and S/D Implant p

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NMOS Process Simulations with TSUPREM4

LDD Spacer Oxide Etch p

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NMOS Process Simulations with TSUPREM4

Metal Etch

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Device Simulation

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Device Simulation

Basic Eqs.i i ’

Input- Structure/Mesh

OutputS / h- Poission’s eq.

- Continuity eq.Drift Diffusion eq

- Structure/Mesh- Doping Profiles- Structure Initialization

- Structure/Mesh- Doping Profiles

Junction Depths- Drift-Diffusion eq.Models- Rec-Gen

- Process Step Spec.- Junction Depths

- Mobility- F-D, Boltzmann

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Device SimulatorsGeneric Device Simulators

PISCES 2ET: Standford Univ.

FIELDAY

PADREPADRE

MINIMOS-NT

MEDICI: based on PISCESMEDICI: based on PISCES

DESSIS

ATLAS

FLOODS

Specialized Device Simulators

MINIMOS: f MOSFETMINIMOS: for MOSFET

PISCES: for MOSFET, Standford Univ.

SEQUOIASEQUOIA

BIPOLE: for Bipolar

전자정보대학 김영석 27

NMOS Device Simulations with MEDICI

Initial Grid

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NMOS Device Simulations with MEDICI

Doping Regridp g g

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NMOS Device Simulations with MEDICI

Potential Regrid g

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NMOS Device Simulations with MEDICI

Impurity Profilesp y s

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NMOS Device Simulations with MEDICI

Impurity Contoursp y s

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NMOS Device Simulations with MEDICI

Gate Characteristics s s

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NMOS Device Simulations with MEDICI

Drain Characteristics s s

전자정보대학 김영석 34

NMOS Device Simulations with MEDICI

Drain Characteristics: Potential Contours s s s

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NMOS Device Simulations with MEDICI

Substrate Currents

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NMOS Device Simulations with MEDICI

Gate Current

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NMOS Device Simulations with MEDICI

Drain Current Snapback p

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NMOS Device Simulations with MEDICI: Ex2

Definition of Mesh, Electrodes, Contacts s , s, s

전자정보대학 김영석 39

NMOS Device Simulations with MEDICI: Ex2

Doping Profilesp g s

전자정보대학 김영석 40

NMOS Device Simulations with MEDICI: Ex2

ID-Vg Curveg

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