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Review  of    Photovoltaic  Solar  Cells  

Op5cs  for  Energy  Course  11/5/13  Liz  Lund  

Outline  •  Solar  electricity  produc5on  •  How  Photovoltaics  (PV)  work  •  Types  of  PV  •  Emerging  technologies  

Solar  Electricity  Produc5on  

hIp://www.nrel.gov/docs/fy13os5/54909.pdf  

Renewables  in  US  

~10%  Renewable  Energy  in  US  Solar  is  a  small  frac5on  0.1%  

Global  vs.  US    Renewable  Energy  •  Same  trends  for  PV  

global  and  in  US  •  Wind  and  solar  are  

fastest  growing  renewables  in  US  

• Wind  17%  •  Solar  86%  

hIp://www.nrel.gov/docs/fy13os5/54909.pdf  

Solar  Growth  is  Exponen5al  

Solar  electricity  genera5on  grown  by  a  factor  of  9  (2000  to  2011)  

Who’s  Making  It?  

Where  is  it  Installed?  

Where  in  US?  

States  with  extensive  incen5ves  lead  PV  deployment    

Solar  Prices  

hIp://www.resilience.org/stories/2013-­‐04-­‐25/solar-­‐energy-­‐this-­‐is-­‐what-­‐a-­‐disrup5ve-­‐technology-­‐looks-­‐like  

99%  cost  drop  since  1977  

Solar  becoming  compe55ve  with    fossil  fuel  generated  energy  

Swanson’s  Law:    PV  costs  drop  20%  for  every  doubling  of  shipped  volume  

$.50/waI  

How  Photovoltaics  Work  

Photovoltaic  Solar  Cells:  Light  In,  Electricity  Out  

3  Necessary  Func-ons:    

1.  Generate  charge  carriers  from  light    semiconductor  +  sunlight  

 2.  Separate  charge  carriers  

 p-­‐n  junc5on  (diode)    

3.  Collect  charge  carriers  to  do  electrical  work    carriers  reach  front  and  back  contacts  

   

Typical  CZTS(Se)  Solar  Cell  Stack  

Glass  

1  µm  CZTS(Se)  

Mo  

300  nm  ZnO  

50  nm  CdS  

Ni/Al  

50  nm  i-­‐ZnO  

1  

2  

3  

3  

2  

Front  Contact  

Back  Contact  

Absorber  Layer  

Transparent    Conduc5ng  Oxide  

Solar  Cell,  Module,  Array  

Undoped  Si  Laice  

“Missing”  electron  Hole  

B  Doped  Si  

p-­‐Type  extra  holes  

“Extra”electron  

P  Doped  Si  

n-­‐Type  extra  electrons  

B  

Boron  

Si  

Silicon   Phosphorous  

P  

n-­‐  and  p-­‐type  semiconductors  

+  -­‐  

p-­‐Type  extra  holes  

n-­‐Type  extra  electrons  

-­‐  

-­‐  

-­‐  

-­‐  

+  

+  

+  

+  

1.  n-­‐  and  p-­‐type  materials  separate  are  neutral  

2.  Place  materials  together  •  Free  electrons  and  holes  

diffuse  and  recombine  •  Leave  behind  charged  

nuclei  (localized)  

3.  Create  charged  interface  •  Charge  build-­‐up  repels  

complete  diffusion  •  At  equilibrium,  establish  

space  charge  region  4.  Built  in  voltage  poten5al  

•  Diode  behavior  of  pn  junc5on  

Space  Charge  Region  

Making  a  Diode  

The  Band  Gap:      Energy  barrier  to  genera5ng  charge  carriers  

Atoms  in  a  Crystal  Energy  Bands    

Individual  Atoms  Discrete  Energy  

States  

Energy  

p  

s  

Energy  Gap  

Conduc5on  Band  

Valence  Band  

Band  Diagram  

EC  

EV  

Eg  

 hIp://pveduca5on.org/pvcdrom/pn-­‐junc5on/band-­‐gap    

Conduc-on  band  (of  states):  Higher  energy  state    Electrons  are  delocalized  Free  to  move  throughout  crystal  Formed  from  an5-­‐bonding  orbitals  in  crystal    

Valence  band  (of  states):  Lower  energy  state  Electrons  are  localized  around  atomic  nuclei  Formed  from  bonding  orbitals  in  crystal    

Genera5ng  Charge  Carriers-­‐Absorp5on  of  Light  

hIp://pveduca5on.org/pvcdrom/pn-­‐junc5on/absorp5on-­‐of-­‐light  

Semiconductor  only  absorbs  light  with  energy  equal  or  greater  than  the  band  gap  (lower  wavelength)    Ideal  band  gap:    1.1  eV    Lower  band  gaps  give  lower  voltage  (current  losses)  

Absorp5on  Coefficient-­‐PV  Material  Property  

hIp://www.pveduca5on.org/pvcdrom/pn-­‐junc5on/absorp5on-­‐depth  

Schockley-­‐Quiesser  Limit  

η  =  33.7%    theore5cal  maximum  for  single  pn  junc5on  cell  with  no  concentra5on    PloIed  with  actual  record  efficiencies  of  different  materials    What  limits  this?    (33%  example)  •  47%  to  heat.  •  18%  not  absorbed.  •  2%  local  recombina5on  of  holes  

and  electrons.  Passing  the  Limit:  Use  mul5ple  materials  Have  mul5ple  pn  junc5ons  Concentrate  sunlight  Harvest  heat  also  Use  “quantum  dots”  to  harvest  excess  photon  energy    

Device  Parameters  •  JV  Curve  

•  Jsc  •  Voc  •  Resistances  

•  Series-­‐contact  and  current  movement  •  Shunt-­‐manufacturing  defects    

•  Fill  Factor  •  Max  Powerpoint  

•  Efficiency  •  IQE  •  EQE  

 

hIp://www.pveduca5on.org/pvcdrom/solar-­‐cell-­‐opera5on/light-­‐generated-­‐current  

hIp://www.pveduca5on.org/pvcdrom/solar-­‐cell-­‐opera5on/iv-­‐curve  

JV  Curve  

Maximum  power  point  

Series  Resistance  Slope  of  Line  

Shunt  Resistance  Slope  of  Line  

Types  of  PV  

hIp://www.nrel.gov/ncpv/images/efficiency_chart.jpg  NEED  MORE  BULLET  POINTS  

Classes  of  PV  

•  Thin  Film  –  1-­‐2  um  thick  –  “dirty”  deposi5on  methods  –  Op5cally  thin-­‐use  op5cs  to  compensate  –  More  defect  tolerant  –  CIGS,  CdTe,  CZTS,  a-­‐Si  –  Deposit  on  flexible  substrates  

•  Thick  –  100’s  of  um  thick  –  Typically  c-­‐Si  –  Must  be  very  pure  for  carrier  diffusion  

•  Monocrystalline  –  Con5nuous  crystal  laice  –  Expensive  produc5on  –  Higher  efficiencies  in  cells  

•  Polycrystalline  –  Many  grains  (um-­‐cm  size)  –  More  grain  boundaries=more  defects  –  Most  thin  films  

Projected  Cell  Produc5on    Market  Shares  2011  

hIp://www.posterus.sk/?p=1247  

•  Energy  Payback  Time  –  10%  CIGS,  4%  OPV  …1  yr  –  c-­‐Si  …2.7  yrs  

Technology   2004   2009   2012   Record  Cell  

Super  Moncrystalline  Silicon   16   19.3   20.1   25  

Monocrystalline  Silicon   12.8   15   16   25  

Mulitcrystalline  Silicon   12.5   14   14.5   20.4  

CdTe   7.6   11   12.6   17.3  

CIGS   10   12   13.3   20.3  

µc-­‐Si,  a-­‐Si   n/a   8.5   10.2   12.5  

a-­‐Si  (3-­‐j)   6.7   8.3   9.7   12.5  

a-­‐Si  (1-­‐j)   6.5   6.7   7.5   10  

Organic   n/a   3.5   4.2   10.1  

Commercial  vs.  Record  %  Efficiencies  

Comparing  PV  Technologies  

Emerging  PV  

hIp://www.nrel.gov/ncpv/images/efficiency_chart.jpg  NEED  MORE  BULLET  POINTS  

Perovskite  Solar  Cells  

hIp://news.sciencemag.org/physics/2013/09/flat-­‐out-­‐major-­‐advance-­‐emerging-­‐solar-­‐cell-­‐technology  

Dye-­‐Sensi5zed  Solar  Cells  

Organic/Inorganic  Hybrid  Cheap  to  make  Life5me?    3  different  materials:  1.  Light  absorp5on  

 Sensi5zing  (organic)  dye  2.  Electron  transport  

 Wide  band-­‐gap  (inorganic)      semiconductor  

3.  Hole  transport/electron  regenera5on    Electrolyte  

 

1  

1  

2  

2   3  

3  

Hardin  et  al.,  Nature  Photonics  (2012)  

Mul5-­‐junc5on  PV  

Thin  top  layers  absorb  shorter  wavelengths  Longer  wavelengths  in  boIom  cell    Tunnel  diode  allows  current  flow  but  electrical  field  isola5on  of  top  and  boIom  cells    Expensive  to  make    Crystalline  laice  and  currents  must  match-­‐really  difficult  and  constrains  materials!    Currently  only  used  in  space    World  Record:  43%  with  5-­‐tandem  cell  UNSW  

Concentra5ng  PV  (CPV)  

Focus  light  using  mirrors,  lenses  Use  small  area,  high  efficiency  cells    

Addi-onal  requirements  •  Non-­‐imaging  op5cs-­‐focus  on  

radia5ve  rather  than  image  transfer  •  Trackers-­‐2D  east  to  west  each  day,  

north  to  south  each  season  •  Cooling  system  

hIp://newenergynews.blogspot.com/2009/07/concentra5ng-­‐photovoltaics.html  hIp://amonix.com/content/low-­‐energy-­‐produc5on-­‐costs-­‐0  

CPV  cont’d  Advantages  •  Very  efficient,  less  space  •  Low  water  usage,  advantage  over  

tradi5onal  solar  thermal  concentrators  (4  vs.  850  gal/MWhr)  

•  Lower  cost  of  materials,  majority  of  infrastructure  is  not  PV  

•  Well-­‐suited  for  large  power  plant  arrays  

•  Nearing  grid  parity  now!  

Disadvantages  •  Requires  direct  sunlight  •  New  technology-­‐late  to  the  funding  game  •  Trackers  are  expensive      

Suited  for  desert  climates  especially  

Earth-­‐Abundant  Thin  Films  

Large-­‐scale  PV  should  use  earth-­‐abundant  and  industrially-­‐available  elements  to  avoid  boIlenecks  

“commodity  elements”  

Abundance  in  Earth’s  Crust   World  Annual  Produc-on  (tons)  

We  use  these  currently  We  use  these    currently  

Phillip  Dale  

PV  materials  cost-­‐Red  Herring  

•   First  Solar:  ‘Module  shipping  box  cost  higher  than  CdTe  material  cost’  •   Glass  for  panel  much  more  expensive  than  1  cm3  semiconductor  film  (>100x)  •   Absolute  semiconductor  materials  costs  insignificant!    

Typical  Module  =  few  hundred  $    

$$  

Winning  Argument-­‐TW  Scale-­‐Up  Poten5al  

•   Sulfur:  byproduct  of  Cu,  Zn  ores  &  fossil  fuel  produc5on  

•   More  cm3/kg  from  light  elements  

•   Many  sulfides  have  right  EGap  

Fthenakis,  Ren.  Sus.  Ener.  Rev.  13  2746  (2009)  

In  or  Te  produc9on  limits:    CIGSe  &  CdTe:  ~150  GWP/yr  

CZTS-­‐CIGS  with  no  Indium  

•  Kesterite  structure  (like  chalcopyrite)  

•  EGap  =  1.5  eV,  direct  gap  

•  First  PV  inves5ga5ons  in  late  1990’s    –  Katagiri      –  Friedlmeier    

η  =  11%    for  evaporated  cells*  (IBM)  

Chen  APL  (2009)  *Wang  APL  97  143508  (2010)    

Summary  

•  Photovoltaic  solar  cells  needs  3  things  – Genera5on  of  charge  carriers-­‐semiconductor  with  band  gap  

– Separa5on  of  carriers-­‐pn  junc5on  – Collec5on  of  current  to  do  electrical  work  

•  Variety  of  technologies  that  get  the  job  done  •  C-­‐Si  s5ll  dominate  the  market  •  It’s  geing  cheaper  faster  

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