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IPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
PG-TO247-3
DrainPin 2, Tab
GatePin 1
SourcePin 3
MOSFET600VCoolMOSªP7PowerTransistorTheCoolMOS™7thgenerationplatformisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.The600VCoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellenteaseofuse,e.g.verylowringingtendency,outstandingrobustnessofbodydiodeagainsthardcommutationandexcellentESDcapability.Furthermore,extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompactandmuchcooler.
Features•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness•Significantreductionofswitchingandconductionlosses•ExcellentESDrobustness>2kV(HBM)forallproducts•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²)•LargeportfoliowithgranularRDS(on)selectionqualifiedforavarietyof industrialandconsumergradeapplicationsaccordingtoJEDEC (J-STD20andJESD22)
Benefits•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages•Simplifiedthermalmanagementduetolowswitchingandconduction losses•Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection•Suitableforawidevarietyofapplicationsandpowerranges
ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V
RDS(on),max 99 mΩ
Qg.typ 45 nC
ID,pulse 100 A
Eoss@400V 5.0 µJ
Body diode di/dt 900 A/µs
Type/OrderingCode Package Marking RelatedLinksIPW60R099P7 PG-TO 247-3 60R099P7 see Appendix A
2
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
1MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
3120 A TC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 100 A TC=25°C
Avalanche energy, single pulse EAS - - 105 mJ ID=5.1A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.53 mJ ID=5.1A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 5.1 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 117 W TC=25°CStorage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - 60 Ncm M3 srews
Continuous diode forward current IS - - 31 A TC=25°CDiode pulse current2) IS,pulse - - 100 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=31A,Tj=25°C see table 8
Maximum diode commutation speed dif/dt - - 900 A/µs VDS=0...400V,ISD<=31A,Tj=25°C see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj max. Maximum Duty Cycle D = 0.502) Pulse width tp limited by Tj,max3) Identical low side and high side switch with identical Rg
4
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.07 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W -
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
5
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.53mA
Zero gate voltage drain current IDSS --
-10
1- µA VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.0770.18
0.099- Ω VGS=10V,ID=10.5A,Tj=25°C
VGS=10V,ID=10.5A,Tj=150°C
Gate resistance RG - 5.9 - Ω f=1MHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1952 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 33 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energyrelated1) Co(er) - 62 - pF VGS=0V,VDS=0...400V
Effective output capacitance, timerelated2) Co(tr) - 649 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 23 - ns VDD=400V,VGS=13V,ID=10.5A,RG=5.3Ω;seetable9
Rise time tr - 15 - ns VDD=400V,VGS=13V,ID=10.5A,RG=5.3Ω;seetable9
Turn-off delay time td(off) - 89 - ns VDD=400V,VGS=13V,ID=10.5A,RG=5.3Ω;seetable9
Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=10.5A,RG=5.3Ω;seetable9
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 11 - nC VDD=400V,ID=10.5A,VGS=0to10VGate to drain charge Qgd - 13 - nC VDD=400V,ID=10.5A,VGS=0to10VGate charge total Qg - 45 - nC VDD=400V,ID=10.5A,VGS=0to10VGate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=10.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
6
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=10.5A,Tj=25°C
Reverse recovery time trr - 211 - ns VR=400V,IF=4A,diF/dt=100A/µs;see table 8
Reverse recovery charge Qrr - 2.1 - µC VR=400V,IF=4A,diF/dt=100A/µs;see table 8
Peak reverse recovery current Irrm - 20.1 - A VR=400V,IF=4A,diF/dt=100A/µs;see table 8
7
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
20
40
60
80
100
120
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
102
103
10 ms
DC
1 ms
100 µs
10 µs
1 µs
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
102
103
DC
10 ms
1 ms
100 µs
10 µs
1 µs
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-1 10010-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
8
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
20
40
60
80
100
120
140
20 V10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
20
40
60
80
100
20 V10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 16 32 48 64 800.160
0.220
0.280
0.340
0.400
6 V
20 V
7 V
10 V
6.5 V
5.5 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [no
rmalized]
-50 -25 0 25 50 75 100 125 1500.000
0.500
1.000
1.500
2.000
2.500
3.000
RDS(on)=f(Tj);ID=10.5A;VGS=10V
9
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
25
50
75
100
125
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 40 500
2
4
6
8
10
120 V 400 V
VGS=f(Qgate);ID=10.5Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1
100
101
102
103
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
25
50
75
100
125
EAS=f(Tj);ID=5.1A;VDD=50V
10
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-50 -25 0 25 50 75 100 125 150540
550
560
570
580
590
600
610
620
630
640
650
660
670
680
690
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 500100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 5000
2
4
6
8
Eoss=f(VDS)
11
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
12
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TO247-3,dimensionsinmm/inches
13
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
7AppendixA
Table11RelatedLinks
• IFXCoolMOSP7Webpage:www.infineon.com
• IFXCoolMOSP7applicationnote:www.infineon.com
• IFXCoolMOSP7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
14
600VCoolMOSªP7PowerTransistorIPW60R099P7
Rev.2.0,2017-05-18Final Data Sheet
RevisionHistoryIPW60R099P7
Revision:2017-05-18,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2017-05-18 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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PublishedbyInfineonTechnologiesAG81726München,Germany©2017InfineonTechnologiesAGAllRightsReserved.
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WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
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