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MOSFETMetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6600VCoolMOS™P6PowerTransistorIPx60R190P6
DataSheetRev.2.2Final
PowerManagement&Multimarket
2
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
TO-247
12
3
tab
D²PAKtab
TO-220
TO-220FP
DrainPin 2, Tab
GatePin 1
SourcePin 3
1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighterandcooler.
Features•IncreasedMOSFETdv/dtruggedness•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Veryhighcommutationruggedness•Easytouse/drive•Pb-freeplating,Halogenfreemoldcompound•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V
RDS(on),max 190 mΩ
Qg.typ 37 nC
ID,pulse 57 A
Eoss@400V 4.9 µJ
Body diode di/dt 500 A/µs
Type/OrderingCode Package Marking RelatedLinksIPW60R190P6 PG-TO 247
IPB60R190P6 PG-TO 263
IPP60R190P6 PG-TO 220
IPA60R190P6 PG-TO 220 FullPAK
6R190P6 see Appendix A
3
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
2MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
20.212.7 A TC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 57 A TC=25°C
Avalanche energy, single pulse EAS - - 419 mJ ID=3.5A; VDD=50V; see table 12
Avalanche energy, repetitive EAR - - 0.63 mJ ID=3.5A; VDD=50V; see table 12
Avalanche current, repetitive IAR - - 3.5 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation (Non FullPAK) TO-220, TO-263, TO-247 Ptot - - 151 W TC=25°C
Power dissipation (FullPAK) TO-220FP Ptot - - 34 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque (Non FullPAK) TO-220, TO-247 - - - 60 Ncm M3 and M3.5 screws
Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws
Continuous diode forward current IS - - 17.5 A TC=25°C
Diode pulse current2) IS,pulse - - 57 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°Csee table 10
Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°Csee table 10
Insulation withstand voltage forTO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min
1) Limited by Tj max. Maximum duty cycle D=0.752) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG
5
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
3Thermalcharacteristics
Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.83 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
Table4Thermalcharacteristics(FullPAK)TO-220FPValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 3.7 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
Table5ThermalcharacteristicsTO-263Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.83 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W
Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.
Soldering temperature, wave & reflowsoldering allowed Tsold - - 260 °C reflow MSL1
6
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table6StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=0.63mA
Zero gate voltage drain current IDSS --
-10
1- µA VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.1710.445
0.190- Ω VGS=10V,ID=7.6A,Tj=25°C
VGS=10V,ID=7.6A,Tj=150°C
Gate resistance RG - 3.4 - Ω f=1MHz,opendrain
Table7DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1750 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 76 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy related1) Co(er) - 61 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time related2) Co(tr) - 264 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 15 - ns VDD=400V,VGS=13V,ID=9.5A,RG=3.4Ω;seetable11
Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=9.5A,RG=3.4Ω;seetable11
Turn-off delay time td(off) - 45 - ns VDD=400V,VGS=13V,ID=9.5A,RG=3.4Ω;seetable11
Fall time tf - 7 - ns VDD=400V,VGS=13V,ID=9.5A,RG=3.4Ω;seetable11
Table8GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 11 - nC VDD=400V,ID=9.5A,VGS=0to10V
Gate to drain charge Qgd - 13 - nC VDD=400V,ID=9.5A,VGS=0to10V
Gate charge total Qg - 37 - nC VDD=400V,ID=9.5A,VGS=0to10V
Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=9.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
7
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
Table9ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=9.5A,Tj=25°C
Reverse recovery time trr - 310 - ns VR=400V,IF=9.5A,diF/dt=100A/µs;see table 10
Reverse recovery charge Qrr - 4 - µC VR=400V,IF=9.5A,diF/dt=100A/µs;see table 10
Peak reverse recovery current Irrm - 25 - A VR=400V,IF=9.5A,diF/dt=100A/µs;see table 10
8
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
20
40
60
80
100
120
140
160
Ptot=f(TC)
Diagram2:Powerdissipation(FullPAK)
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
5
10
15
20
25
30
35
Ptot=f(TC)
Diagram3:Max.transientthermalimpedance(NonFullPAK)
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-110-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
Diagram4:Max.transientthermalimpedance(FullPAK)
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-1 100 10110-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
9
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
Diagram5:Safeoperatingarea(NonFullPAK)
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
1021 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram6:Safeoperatingarea(FullPAK)
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
1021 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram7:Safeoperatingarea(NonFullPAK)
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram8:Safeoperatingarea(FullPAK)
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
102
1 µs10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
10
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
Diagram9:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
20
25
30
35
40
45
50
55
6020 V
10 V
8 V
7 V
6 V
5.5 V
5 V4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram10:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
20
25
30
35
40
20 V10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram11:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 10 20 30 400.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
20 V
5.5 V 6 V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram12:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-50 -25 0 25 50 75 100 125 1500.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
98% typ
RDS(on)=f(Tj);ID=7.6A;VGS=10V
11
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
Diagram13:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
10
20
30
40
50
60
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram14:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 400
1
2
3
4
5
6
7
8
9
10
120 V 480 V
VGS=f(Qgate);ID=9.5Apulsed;parameter:VDD
Diagram15:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.010-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram16:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
50
100
150
200
250
300
350
400
450
EAS=f(Tj);ID=3.5A;VDD=50V
12
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
Diagram17:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-75 -50 -25 0 25 50 75 100 125 150 175520
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=1mA
Diagram18:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 500100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram19:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 5000
1
2
3
4
5
6
7
Eoss=f(VDS)
13
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
6TestCircuits
Table10DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trrtF tS
QF QS
dIF / dt
dIrr / dt
VDS(peak)
Qrr = QF +QS
trr =tF +tS
VDS
IF
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table11SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table12UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
14
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
7PackageOutlines
Figure1OutlinePG-TO247,dimensionsinmm/inches
15
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
Figure2OutlinePG-TO263,dimensionsinmm/inches
16
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
Figure3OutlinePG-TO220,dimensionsinmm/inches
17
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
A2
H
b
D
c
b2
E
e1
e
L
Q
øP
L1
N
D1
A
DIM
A1
DOCUMENT NO.
Z8B00003319
2.5
REVISION
04
05-05-2014
ISSUE DATE
EUROPEAN PROJECTION
1.130
0.177
MIN
0.095
0.026
0.016
0.617
0.037
0.092
0.394
0.503
0.116
0.124
0.111
0.353
2.862.42
2.54 (BSC)
5.08
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
2.95
12.78
8.97
3
29.75
0.90
0.63
1.51
16.15
3.50
3.38
3.45
13.75
10.65
9.83
MILLIMETERS
MIN
4.50
2.34
MAX
4.90
2.85
0.113
0.100 (BSC)
0.200
3
1.171
0.059
0.636
0.025
0.035
0.419
0.136
0.133
0.138
0.541
0.387
0
INCHES
0.193
MAX
0.112
SCALE
5mm
0
2.5
b1 0.0370.95 1.38 0.054
b4 0.0260.65 1.51 0.059
b3 0.0260.65 1.38 0.054
Figure4OutlinePG-TO220FullPAK,dimensionsinmm/inches
18
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
8AppendixA
Table13RelatedLinks
• IFXCoolMOSTMP6Webpage:www.infineon.com
• IFXCoolMOSTMP6applicationnote:www.infineon.com
• IFXCoolMOSTMP6simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
19
600VCoolMOS™P6PowerTransistorIPW60R190P6,IPB60R190P6,IPP60R190P6,
IPA60R190P6
Rev.2.2,2015-07-10Final Data Sheet
RevisionHistoryIPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6
Revision:2015-07-10,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2013-12-04 Release of final version
2.1 2013-12-05 Release of multi-package datasheet
2.2 2015-07-10 PG-TO 263 package added
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PublishedbyInfineonTechnologiesAG81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.
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