Micron DDR

DDR System DesignConsiderations

Integrated Technology GroupMicron

DDR Overview

December, 00 3

SSTL2 Signal Levels

Driver

Receiver

December, 00 4

SSTL2 Double Ended Termination V

ermination Island

Address / Command

VTT/VREF

Generator

Data/Strobe/Mask

Chip Selects

SSTL_2

SSTL_2PC266

SDRAMReg.DIMM

VTTTermination Island

Address/Cmnd

Chipset“NorthBridge”

December, 00 5

SSTL2 Single Ended Termination V

TT Termination Island

Address/Command

VTT/VREF

Generator

Data/Strobe/Mask

Chip Selects

SSTL_2

SSTL_2 PC266SDRAM

Reg.DIMM

SDRAMReg.DIMM

Address/Cmnd

December, 00 6

Use Single Parallel TerminationResistor With Series Resistor

m Lower system cost

m Easier motherboard route

m Improved bandwidth

m Lower skew due to ISI

m Reduced skew due to crosstalk if doneproperly– Consider crosstalk effects in the connector pinout

December, 00 7

Double Data Rate MotherboardComponents

NBNBNB

CLKCLKCLK

VDDVVDDDD

VDD generatorswitching regulator

VTT/REF activetermination voltageswitching regulator

VTTVVTTTT

ProcessorProcessorProcessor

VTT voltage islandde-couple thoroughlyVDD and VSS

Series terminationresistor packs

Four-layer motherboardFour-layer motherboard

Differentialclock synthesizerDifferentialclock synthesizer

VTT/REF activetermination voltageswitching regulator

VTT voltage islandde-couple thoroughlyto VSS

December, 00 8

Typical Signaling forDDR Main Memory

m The values for the series and termination resistors varydepending on the system design

VTT/VREF Implementation

December, 00 10

Goals of VTT and VREFDesign

m Minimize timing skew due to– Asymmetric logic highs versus logic lows

– Noise on VREF or VTT

– Offset of VTT relative to VREF

– Drift of VREF or VTT over voltage and temperature

– External component mismatch

m Minimize cost

m Minimize power dissipation

December, 00 11

VREF Requirements

m Track 50% of (VDDQ-VSSQ) over– Voltage

– Temperature

– Noise

m Supplies minimal DC current (input leakage only)and only small transient currents– Input to NFET gates of a differential pair

December, 00 12

VREF Tracking to VDDQ

December, 00 13

VREF Recommendations

m Use global VREF distribution scheme– Eliminates variation and tracking of multiple generators

– Best performance if kept clean

m Use simple resistor divider with 1% or better accuracy– Inexpensive to use

– Tracks voltage and temperature well

m Use VREFOUT pin of ML6554– Resistor divider is integrated on-chip

– Fewer external components

– Best accuracy and matching to VTT due to trimming

– Minimizes DC error caused by the load current ofmultiple device input leakage

December, 00 14

VREF Generation

VDD VDDQ VDDQ VDDQ

VSS VSS VSS VSS

Discrete Resistors or VREF (OUT) of ML6654

m Example of VREF generation using a resistor divider

December, 00 15

VREF Layout Recommendations

m Maintain a 15-20 mil clearance from other netsm Use distributed decoupling scheme

– Minimizes capacitor ESL– Localizes transient currents and returns

m Simple implementation by routing on top signallayer trace– VREF is at connector pin 1– Isolate VREF and/or shield with VDDQ and VSSQ

December, 00 16

VREF PCB Routing

December, 00 17

VTT Requirements

m Track 50% of (VDDQ-VSSQ) over– Voltage– Temperature– Noise

m Maintain <40mV offset from VREF over theseconditions

m Source and sink DC current for signal termination– Absolute maximum current is 2.6-2.9A for a 64/72-bit

channel

December, 00 18

VTT Recommendations

m Several solutions exist that are tradeoffs of cost,integration, and performance– Standard analog components (Motorola, National,

Fairchild, etc.)

• High current output, good accuracy

– Switching regulator with discrete MOSFETs (such asLTC1430)

• High current output (10A), good accuracy, semi-integrated

– Switching regulator with integrated MOSFETs (such asML6554)

• Adequate current output (3A) and accuracy, highestintegration, lowest cost

December, 00 19

VTT Recommendations(continued)

m Use global VREF as input reference to minimize

tracking error and offset

m Use high-quality filter components

– Low Rs on filter inductor

– Low ESR and ESL on filter capacitor to minimize DC and

dynamic offset

• Recommend the use of multiple parallel capacitors and/or

Sanyo OS-CONs to minimize ESR and ESL

December, 00 20

VTT Regulation Circuit

m VTT regulation circuit using Micro Linear ML6554

December, 00 21

VTT Layout Recommendations

m Decouple to VSSQ

– Decouple at both ends, and distribute decouplingacross the island to localize transient currents andminimize ESL

m Place termination resistors on a top layer VTT

island– Island is at the end of the bus and non-obstructing

– Use wide-island trace for current capacity

– Place VTT generator as close to termination resistors aspossible to minimize impedance (inductance)

December, 00 22

VTT Island PCB Layout

ML6554Regulator

Vtt PowerPlane

DecouplingCapacitors

TerminationResistors

December, 00 23

2.5 Volt Regulation

m 2.5 volt regulation circuit using Linear TechnologyLTC1530-2.5

December, 00 24

2.5 Volt Regulation Layout

m Regulated V2.5 ties to solid power plane under DIMM’s and DRAMcontroller portion of Samurai DDR

VccInput

RegulatedV2.5

LTC1530Regulator

Voltage Margining

December, 00 26

VREF/VTT Margining

VREF In On ML6554VDD

100 ohm Variable Resistor

1K 0.1uF

m Use the VREF In pin on the ML6554 to margin VREF and VTT

– VTT and VREF out follow VREF In

m VREF specification is 0.49*VDD to 0.51*VDD

m VTT specification is VREF +/- 40mVm Use simple resistor divider below connected to VREF In pin on

ML6554

December, 00 27

VDD Margining

m VDD specification is 2.3 to 2.7 voltsm To margin VDD change LTC1530-2.5 to LTC1530-ADJm Adjust VDD with resistor divider R1/R2.

December, 00 28

VDD Margining

+5 volts input

2.5 Volt Vdd output

Board Implementation

December, 00 30

Registered-OnlyMotherboard Topology

T Term

ination Island

APC266

SDRAMReg.DIMM

APC266

SDRAMReg.DIMM

APC266

SDRAMReg.DIMM

VTT/VREF

Generator

Data/Strobe/Mask

Chip Selects

PC266SDRAM

Reg.DIMM

Mem Clock

DifntlClk Drvr

Address/Cmnd

SSTL_2

CK/CK#

December, 00 31

Unbuffered/RegisteredMotherboard Topology

Add/Comnd B

Address/Command A

Data/DM/DQS

PC2100DDRDIMM

APC2100

DDRDIMM

Add/Comnd A

Chip Selects

Clocks

T Term

ination Island

Vtt/VrefGenerator

PC2100DDRDIMM

BPC2100

DDRDIMM

Address/Command B

December, 00 32

PCB Considerations

m PC2100 DDR can be implemented in a low-costPCB (standard PC100 motherboard technology)

m Standard pad, anti-pad and via sizes can beused

m No additional PCB test requirements relative toPC100

December, 00 33

PCB Routing

m DDR channel can be implemented in a 2S 2Pboard– Controller BGA ballout determines whether a four-layer

board can be used, not the memory channel

– Two signal layers to get from controller to seriesresistor

– The channel can be routed on one signal layer from theseries termination resistor out, with the exception ofpoint-to-point signals

December, 00 34

Reference Motherboard Routingm Maintain signal reference through DDR channel

– Route signals on layers adjacent to a commonreference plane.

– Route each data group (8 x DQ + DQS + DM) on samelayer to match propagation delays and minimize skew.

– Address and control matching is less critical.

– Separate data and control nets to minimize crosstalk.

m Routing Rules– 5 mil trace/15 mil space on all in group SSTL nets

– Connector rules: 5 mil trace, 2 mil space from antipad,7 mils from trace

December, 00 35

Micron Samurai DDRTrace length matching rules

m Match trace lengths for each data group (8 x DQ +DQS + DM) to 0.1 inch from controller to firstDIMM.

m Match trace lengths to +/- 500 mils across theentire channel.

m Match composite length from controller bond pad tofirst DIMM pad• LBGA + Lcontroller-R + LR-DIMM = matched

m Length matching from last DIMM pad to paralleltermination resistor is less critical

December, 00 36

Length Matching from Controller to1st DIMM Pin

LBGA1 + LC-R1 + LR-D1 = LBGA2 + LC-R2 + LR-D2

December, 00 37

PCB Channel RoutingThrough the DIMMs

m A 5-mil width / 7-mil space board will yield:

– Three vertical signal-routing channels

– Two diagonal signal-routing channels

– Second layer void except for point-to-point signals

– Lowest skew due to propagation-velocity mismatch betweendifferent signal layers

December, 00 38

Routing Through DIMMs

Two Diagonal Signals Three Vertical Signals

Series Resistors

December, 00 39

Termination Resistor Placement

m Motherboard series resistors should be close to thefirst DIMM– Best performance for READ from last module

• Limiting case

– Simplifies routing and controller congestion

December, 00 40

System Design Examples

December, 00 41

DDR Memory Route 1st Layer

December, 00 42

DDR Memory Route2nd Layer

December, 00 43

Reference MotherboardStack-Up

mReference board stack-up• 6 Layer Board

Signal 4

Signal 1

Signal 2

Signal 3

4.5-Mils

30-Mils

6.5-Mils

4.5-Mils

6.5-Mils

December, 00 44

Questions and Answers

Micron DDR

Documents

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