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Advanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance
SI2302MOSFET ROHS
SOT-23-Features
Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.)
Pulse test: pulse width
Page 2 of 3Rev 8: Nov 2014 www.born-tw.com
SI2302MOSFET ROHS N-Channel Enhancement-Mode MOSFET
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
ID- Drain Current (A)
PD
P
ower
(W)
I D- D
rain
Cur
rent
(A）
R
dson
On-
Res
ista
nce(
mΩ
)
I D- D
rain
Cur
r ent
(A)
Figure 1 Power Dissipation Figure 2 Drain Current
Figure 3 Output Characteristics Figure 4 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I D- D
rain
Cur
rent
(A)
Rds
on O
n-R
esis
tanc
e(mΩ
)
Figure 5 Transfer Characteristics
Figure 7 Rdson vs Vgs
Qg Gate Charge (nC)
Vgs
Gat
e-S
ourc
e Vo
ltage
(V)
Figure 6 Gate Charge
Vds Drain-Source Voltage (V)
I D- D
rain
Cur
rent
(A)
Figure 8 Safe Operation Area
SOT-23 PACKAGE OUTLINE Plastic surface mounted package
SOT-23
(UNIT)：mm
Page 3 of 3Rev 8: Nov 2014 www.born-tw.com
SI2302MOSFET ROHS
-N-Channel Enhancement-Mode MOSFET
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