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Magneto-Seebeck effect in magnetic tunnel junctions
Jakob Walowski, Andreas Mann, Marvin Walter, Valdislav Zbarsky, Anissa Zeghuzi, Markus Münzenberg, I. Physikalisches Institut, Universität Göttingen, Germany
Michael Czerner, Michael Bachmann, Christian Heiliger, I. Physikalisches Institut, Justus-Liebig-Universität Gießen
J.S. Moodera, MIT Cambridge, USA
Markus Schäfers, Daniel Ebke, Günter Reiss, Andy Thomas*, Department of Physics, Universität Bielefeld, Germany
Department of Physics, * Institut für angewandte Physik, Hamburg, Germany
„chargeaccumulation“
„spinaccumulation“
TÑ
V+ -
mS
+
TÑ
-
TSV D=D
Charge and spin-dependent Seebeck effect
TSSs D=Dm
Theory: M. Johnson and R. H. Silsbee, Phys. Rev. B 35, 4959 (1987). Experiment: L. Gravier Phys. Rev. B 73, 024419 (2006).K. Uchida Nature 455, 778 (2008).A. Slachter Nature Phys. 6, 879 (2010).G.E.W. Bauer, Spin Caloritronics, Solid State Comm. 150, 459 (2010).
FeCo
Fe/ MgO/ FeCo/ MgO/ Co
+ -
TÑ
+ -
TÑ
V V
… in bulk and tunnel junctions
M. Czerner et al. Phys. Rev. B 83, 132405 (2011)
Spin-scattering mechanisms
G. M. Müller et al., Nature Mater. 8, 56 (2009)
Elliott-Yafet process: femtosecond demagnetization and FMR
R. J. Elliott, Phys. Rev. 96 (1954).G. M. Müller et al., Nature Mater. 8, 56 (2009)
)()(~ 2FhFe EncEnW ¯
¯
exchSO Ec DV~ Spin-orbit interaction
Spin mixing:
Fs pump-probe:
m
)(En )(En¯
E
¯W
¯
¯
+-
=ee
ee
nnnnP0
Spin polarization:
Spin-scattering mechanisms
Elliott-Yafet process: femtosecond demagnetization and FMR
R. J. Elliott, Phys. Rev. 96 (1954).G. M. Müller et al., Nature Mater. 8, 56 (2009)Fs pump-probe:
Spin polarization P dependent relaxation
For : • Spin-flip processes are prohibited• Electron and spin system are
isolated
1®P
¯W
)(En )(En¯
E
m
)()(~ 2FhFe EncEnW ¯
¯
exchSO Ec DV~ Spin-orbit interaction
Spin mixing:
Spin-scattering mechanisms
¯
¯
+-
=ee
ee
nnnnP0
Test of the effect of the coupling parameter:
• gel-sp
• 2nd: suppression of the spin scattering
Spin-scattering mechanisms
spins (Ts)
latsp-tspel-t
lattice (Tl)
latel-t
electrons (Te)
e-
Coupling parameters• gel-lat > gsp -lat > gel-sp
0 5 10 15
Ni
Co2MnSi
DqKe
rr [ar
b. u
nits
]
CrO2
LSMO
Dt [ps]
Fe3O4
• Spin-flip processes are prohibited• Electron and spin system are
isolated
Three temperature model: half metal
spins (Ts)
latsp-tspel-t
lattice (Tl)
latel-t
electrons (Te)e-
Spin relaxation in half metals
G. M. Müller et al., Nature Mater. 8, 56 (2009)
Collaboration with: Bielefeld University and Hitachi GST
Spin relaxation in half metals
0.4 0.6 0.8 1.0
0.1
1
10
100
t m,
fit [p
s]
P
Ni CoFeCo2FeAl
Fe, Ni, Py
CrO2
(CoFe)1-xGex
Co2MnSi/V/Si
CoFeSb*
Co2MnSi/MgO Co2MnGe
TP (E)
TAP (E)
• “Conventional” Seebeck effect: Voltage generation due to a temperature gradient in the material:
• In a magnetic tunnel junction depence on magnetization orientation:
“Magneto-Seebeck effect”
TSV D=D
SMS =SP - SAP
min(SP,SAP)
Magneto-Seebeck effect?
Jakob WalowskiBenjamin Lenk
Andreas Mann (now EPFL), Henning Ulrichs (now U Münster), Fabian Garbs Marvin Walter
…. + Valdislav ZbarskyBachelor students:
Martin Lüttich, Christian Leutenantsmeyer, Jelena Panke, Nils Abeling, Mirco Marahrens, Anissa Zeghuzi
Priority program SpinCaT
People who do the work
• Introduction into coherent tunneling
• Magneto-Seebeck experiment:
•Experimental setup
•Simulations of the temperature gradients
•Ab initio calculations
•Comparison to the experiment
• Summary
Outline
• Introduction into coherent tunneling
• Magneto-Seebeck experiment:
•Experimental setup
•Simulations of the temperature gradients
•Ab initio calculations
•Comparison to the experiment
• Summary
Outline
V
Parallel magnetization
V
P
PAP
RRR -
=TMR
Antiparallel magnetization
IAPFM 1BarrierFM 2
FM 1BarrierFM 2
IP
Giant tunneling magnetoresistance
Resistance change is tunnelingmagnetoresistance (TMR):
+
-
+
-
Experimentaly achieved TMR604%
S. Ikeda et al.APL 93,082508(2008)
220%
Giant tunneling magnetoresistance
S. Yuasa und D. D. Djayaprawira, J. Phys. D: Appl. Phys. 40, R337-R354 (2007)
Difference between Al2O3 and MgO barriers
S. Yuasa und D. D. Djayaprawira, J. Phys. D: Appl. Phys. 40, R337-R354 (2007)
• Transmission probability is the same for different electronic bands
• Transmission probability changes for different electronic bands
Giant tunneling magnetoresistance
Fe|MgO|Fe coherent tunneling
Giant tunneling magnetoresistance
How thin can we get?
040
-220
-400
220
-2-20
400
2-20
0-40
-200
200
020
21-1
0-20
200 2-11
01-1 0-11
-21-1 -200 -2-11
02-2
-11-1
-400
11-1
-1-11
400
1-110-22
-200
200110
200
1-10
020 0-20
-110-200
-1-10
MgO(001) CoFeB(011)
MgO(011) CoFeB(001)
-2-20
220
(100)
(100)MgO(0-10)Fe(0-11)
MgO(001)Fe(011)
MgO(100)Fe(100)
MgO(0-11)Fe(0-10)
MgO(011)Fe(001)
MgO(100)Fe(100)
Atomic structure – columnar growth
TMR = 320%
Sample annealed 400°CIn collaboration with: M. Seibt U GöttingenA. Thomas, G. Reiss U Bielefeld
V
Parallel magnetization
V
P
PAP
RRR -
=TMR
-5.0 -2.5 0.0 2.5 5.0
200
400
600
800
R (O
hm)
µ0H (mT)
0
50
100
150
200
250
300
TM
R (%
)
Antiparallel magnetization
CoFeB/ MgO/ CoFeB junctions are half metallic with highest TMR (~600% at RT)
Appl. Phys. Lett. 95, 232119 (2009)J. Appl. Phys. 105, 073701 (2009)
IAPFM 1BarrierFM 2
FM 1BarrierFM 2
IP
Giant tunneling magnetoresistance
+
-
+
-
• Introduction into coherent tunneling
• Magneto-Seebeck experiment:
•Experimental setup
•Simulations of the temperature gradients
•Ab initio calculations
•Comparison to the experiment
• Summary
Outline
)(En
E
Semiconductor
Magneto-Seebeck effect
Semiconductors have a large Seebeck effect
Orgin is the• Large asymmetrie of the electrons at
around the Fermi energy
Conduction• Determined by the density of states n(E)
Seebeck effect S=ΔV/ΔT
)(En
E
Semiconductor
Magneto-Seebeck effect
Semiconductors have a large Seebeck effect
Orgin is the• Large asymmetrie of the electrons at
around the Fermi energy
EEnE D- )()( m
Conduction• Determined by the density of states n(E)
Seebeck coefficient S• Determined by density of states• weigthed by (E-m) • times derivative
Geometric center
Seebeck effect
dEEdf )(
TSV D=D
E
m
m
)(ETAP)(ETP
Magneto-Seebeck effect
Tunnel junction For tunnel junctions:
Conduction• Determined by the transmission T(E)• High TMR
M. Walter et al. Nature. Mater. 10, 742 (2011).
E
m
m
Magneto-Seebeck effect
Tunnel junction For tunnel junctions:
Definition of the magneto-Seebeck effect
Conduction• Determined by the transmission T(E)
Seebeck coefficient• Determined transmission T(E)• weigthed by (E-m) • times derivative
EETE D- )()( m
Geometric center
dEEdf )(
dEEdf )(
)(ETAP)(ETPM. Walter et al. Nature. Mater. 10, 742 (2011).
• Introduction into coherent tunneling
• Magneto-Seebeck experiment:
•Experimental setup
•Simulations of the temperature gradients
•Ab initio calculations
•Comparison to the experiment
• Summary
Outline
Camera
B=+/- 80 mTLaser diode5 -100 mW
Chopper(frequency 0.8, 1.5 3 kHz)
Experimental setup
• Toptica stabilized laser diode (784 nm)• Most experiments: 30 mW laser power• Modulation 800 Hz, 1.5 kHz, and 3 kHz
1 mm
Junction array
Camera
B=+/- 80 mTLaser diode5 -100 mW
250 mm
Junction array Au bond pad
Chopper(frequency 0.8, 1.5 3 kHz)
Experimental setup
• Focus15-20 μm diameter• High input impedance (100 GΩ) (LT1113 Linear Technology)• Resistance change < 1 nV
B=+/- 80 mTLaser diode5 -50 mW
Seebeck effect:
Magneto -Seebeck effect:
Experimental setup
TSV APPAPP D=D ,,
TÑAPS
TÑ
+-
500 nm
V
PS +-
V
0.0 0.5 1.0 1.5 2.0 2.50
50
100
150
200
250
300 3 kHz 1.5 kHz 800 Hz reference
Seeb
eck v
oltag
e [mV
]
Time [ms]
Experimental setupModulation chopper and laser intensity Seebeck voltage
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
0.0 0.2 0.4 0.6 0.8 1.0-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
closed open
Ampl
itude
(arb
. uni
ts)
Chopper Signal Diode Signal
3000 Hz Asymmetric Chopperop
enclosed
Ampl
itude
(arb
. uni
ts)
Time (ms)
3000 Hz Normal Chopper
10ms
-5.0
-5.2
-5.4
-5.6
-5.8
-40 -20 0 20 4050
100
150
Volta
ge [m
V]
3 kHz 1.5 kHz
R [k
W]
Magnetic field [mT]
0
50
100
150
TMR
[%]
See
beck
vol
tage
[mV
]
3 kHz1.5 kHz
R [k
W]
Magneto-Seebeck effectSeebeck voltage 0.45 mV, DS= -8.7 mV/KMagneto-Seebeck effect: -8.8%
TÑAPS
TÑ
+-
500 nm
V
PS +-
V
• Introduction into coherent tunneling
• Magneto-Seebeck experiment:
•Experimental setup
•Simulations of the temperature gradients
•Ab initio calculations
•Comparison to the experiment
• Summary
Outline
-40 -20 0 20 400
150
300
450
600
T [K]
z [n
m]
x [mm]
293
296
298
300302
Au contact
SiO2
SiO2
Ta contact
Au contact
SiO2
250 mm
COMSOL finite element modeling
• COMSOL uses finite elements methods• Solving of heat conduction equation
QTktTc +Ñ×Ñ=
¶¶ )(pr
Au contact
SiO2
Co-Fe
Co-FeMgO
Ta
200 ps
1ms
Temperature gradients: 1 to 50 mK
COMSOL finite element modeling
x 40
Device structure by HRTEM
3nm2 nm
• COMSOL uses finite elements methods• solving of heat conduction equation
• 3d or 2d cylindrical model
COMSOL finite element modeling
QTktTc +Ñ×Ñ=
¶¶ )(pr
COMSOL finite element modeling
Au contact
SiO2
200 ps
Co-Fe
Co-FeMgO
Ta
1ms
Cross section of the finite element model Temperature gradients: 1 to 50 mK
COMSOL finite element modeling
TVS DD=
M. Walter et al. Nature. Mater. 10, 742 (2011).
COMSOL finite element modeling
• Introduction into coherent tunneling
• Magneto-Seebeck experiment:
•Experimental setup
•Simulations of the temperature gradients
•Ab initio calculations
•Comparison to the experiment
• Summary
Outline
For tunnel junctions:
Conduction
Seebeck coefficient
Definition of the magneto-Seebeck effect
Magneto-Seebeck effect
Calculations by C. Heiliger U Gießen
Co0.5Fe0.5 Co0.5Fe0.5MgO
200 400 600 800
-80
-40
0
S (parallel) S (antiparallel)S P,
AP [
mV/K
]
Temperature [K]
200 400 600 800
-100
0
100
200
300
M
agne
to S
eebe
ck [%
]
Temperature [K]
SP [μV/K] SAP [μV/K] SP - SAP
[μV/K]SMS [%]
CoFe -19.7 -32.4 12.7 64.1FeCo 45.9 -50.0 95.9 209.0CFFC 9.4 -44.6 54.0 573.2Co0.5Fe0.5 -34.0 -21.9 -12.1 -55.2Experimental value
-107.9 (-1300) -99.2 (-1195) -8.7 (-105) -8.8 (-8.8)
Device structure by HRTEM Seebeck voltage 0.45 mV, DS= -8.7 mV/K
Co0.5Fe0.5 MgO
Magneto-Seebeck effect
M. Walter et al. Nature. Mater. 10, 742 (2011).
10 20 30 40
-10
-20
-30
-40
AP P , model
Seeb
eck
volta
ge [m
V]
Pump fluence [mW]
-40 -20 0 20 40
-9.0-10.5-16.5-18.0-19.5
-30-32
-37-38-39
-42
-43
-44
Seeb
eck
volta
ge [m
V]
5 mW
m0H [mT]
10 mW 20 mW
30 mW
40 mW
Magneto-Seebeck effect
M. Walter et al. Nature. Mater. 10, 742 (2011).
Higher T and gradient expected for higher laser powers• nonlinear behavior TTSV D=D )(
-100-50
050
100150
-100-50050100150
-100-50
050
100150
-100-50050100150
0 0.5 1.0 1.5-100-50
050
100150
0 0.5 1.0 1.5 2.0-100-50050100150
10 mW AP 10mW P
30 mW AP 30 mW P
Mon
itor O
ut (m
V)
Mon
itor O
ut (m
V) 60 mW AP 60 mW P
90 mW AP 90 mW P
Time (ms)
120 mW AP 120 mW P
open
closed
Time (ms)
150 mW AP 150 mW P
High fluence data: femtosecond laser10 mW
150 mW
30 mW
60 mW 90 mW
120 mW
0 2 4 6 8 100
5
10
15
20
25 laser pulse
temperature difference within the MgO layer
te
mpe
ratu
re [K
]
time [ns]
0.00 0.05 0.10 0.150
5
10
15
20
tem
pera
ture
[K]
time [ns]
High fluence data: femtosecond laser
•Large temperature gradinets are achievable: 10K per nanometer
-10
0
10
20
30
40
0 50 100 150
Ti:Sa laserlaser diode
Mag
neto
-See
beck
effe
ct [%
]
300 350 400 450 500
P [mW]
Temperature [K]-40 -20 0 20 40
-30
-40
-40
-40
-40
-40
-50-40
-50
10 mW T= 300K
30 mW T=330K
60 mW T=365K
Seeb
eck
volta
ge [m
V]
90 mW T=400K
120 mW T=440 K
m0H [mT]
150 mW T=475 K
Sign change as predicted:
M. Walter et al. Nature. Mater. 10, 742 (2011).
Magneto-Seebeck effect
• Magneto-Seebeck experiment:
•Experimental verification
•Simulations of the temperature gradients
•Switching of Seebeck coefficients demonstrated
•Ab initio calculations
•Typical features are reproduced by the experiment
Summary
Increasing temporal resolutionSeebeck voltage autocorrelation:
• Femtosecond laser excitation (40 fs temporal resolution)
• Delay t in between the pulses
• Probes non-linearity of the Seebeck voltage
• ~80 ps time scale is the expected timescale when the maximum temperature difference is reached (from simulation)
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