View
98
Download
3
Category
Preview:
Citation preview
1/15
High-Resolution RBS System (HRBS-V500HRBS1000) KOBE STEEL, LTD Machinery & Engineering Company Advanced Product & Technologies Dept.
Outline History for RBS Equipment Hardware of HRBS-V500 Principle of RBS Principle of High-Resolution RBS Examples of High-Resolution RBS Principle & Examples of High-Resolution ERDA Principle of PIXE Comparison of instrumentation
History for RBS Equipment
2/15
3/15
Hardware of HRBS-V500
Principle of RBS10000 1000
4/15
Si
Si
He+
Yield
100 10 1 0 100 200 300 400 500+ Si Au He
Sample1
channel10000 1000
Au
Si
Yield
100 10 1 0 100 200 300 400 500
Sample2
channel10000 1000
Au Si Au Si
Si
He+
Yield
100 10 1 0 100 200 300 400 500
Sample3
channel
Principle of High-Resolution RBS (Spectrometer)Curving Boundary
5/15
Diversion Magnet
1.2E0 0.86E0
Scattered Ion SSD
SLITLow Energy Ion
26. 6Scattered Ion
R1
Scattered Ion Sample
Position Detector (MCP+PSD)
50m m
Spacial resolution 0.5mm
Double Focusing
Comparison of Spectrometer between conventional RBS and HRBS
Energy Range of HRBS Spectrometer
E x x =2 = E Dp 2 R E 0.15% E
Magnetic SpectrometerHigher Energy Resolution
0.86E0
100 mm
Incident Beam
High Energy Ion
E0 1.2E0
Conventional RBS
High-Resolution RBS
1 dimensional Position Detector (MCP + PSD)
Analysis Example 1 for HRBS SiON450keV,He Ion Si-sub 2nm SiON
6/15
Si Si O O N
N
HRBS spectrum of SiON
Depth Profile of SiON
Analysis Example 2 for HRBS High-K
7/15
SolidLine : Before Dot Line : After
Si O
Comparison of HRBS Spectra between before and after AnnelaingHf
3
Comparison of Depth Profile between before and after Annelaing
Analysis Example 3 for HRBS MRAMTa NiFe CoFe Al2O3 CoFe Ru CoFe PtMn NiFe Ta
8/15
1014
Measurement Precision 1.9 % (0. 3)
711
HRBS Measurement (nm)
TEM Picture
SiN/SiO2
AlO Thickness (nm)Measurement Precision 4.7 % (0.5)
Ta Al Ru Ta
Result of Measurement Precision2004 Spring Applied Physics 30a-ZY-4
Ru Thickness (nm)
HRBS Spectrum of MRAM
Analysis Example 4 for HRBS : SGOI StrainStrained Si Relaxed SiGe BOX(SiO2) Si-sub(100)SGOI- 57.3 - 52.1 - 53.7 - 54.7 Si & Ge in SiGe - 55.7 Strained Si SiGe DIP Area Surface O Strained Si DIP Area - 52.1 - 53.7 - 54.7 - 55.7 - 57.3
9/15
Ge in SiGe
Counts for Strained Si for SiGe 0.15
HRBS Spectra for SGOI DIP Posision for Strained Si shifted to 0.15 larger side from DIP Position for SiGe. This means that the lattic constant of Strained Si is shallower than SiGe.
Incident Angle[ ]
SGOIDIP Curve
Principle of ERDA(Elastic Recoil Detection Analysis)
10/15
H H
Sample SurfaceHe+ N+
H H
H
He Ion or N Ion
H
AbsorberConventional ERDA : Mylar Film HERDA : Double Focusing Magnet
Scattered He or N IonHe+ N+ H
DetectorConventional ERDA : SSD HERDA : MCP+PSD
Comparison between conventional ERDA & HERDAComparison by DLC(Diamond like Carbon) spectrum between conventional ERDA & HERDA
11/15
1MeV He+ DLC mikro-i
500keV N+ DLC HRBS500
Conventional ERDA
High Resolution ERDADepth resolution < 0.2nm
Hydrogen depth profile in thin film was CLEARLY measured!!
Analysis Example 1 for HERDA : DLCSamples 3 samples were prepared. Each sample was manufactured in different methane partial pressure.- No.3H C
12/15
No.1 Depth Profile
C
No.2 Depth Profile
- No.2 - No.1
H
C No.3 Depth Profile H
Comparison of HERDA Spectra among 3 samples
Analysis Example 2 for HERDA : Low-K480keV, N Ion Si substrate Low-K
13/15
Surface Peak O H H C Si
HERDA Spectrum of Low-K
Depth Profile of Low-K
Principle of PIXE(Particle Induced X-ray Emission)When Ion collides with atom, it radiates charasteristic X-ray which is unique in each element. By detecting this X-ray, it turns out what elements and how many elements are included. The feature of PIXE is high detection sensivity which is about ppm order.L-Xray K-Xray M L K L K K L M L L K
14/15
Ion Electron M
15/15
Comparison of instrumentation(evaluation of thin film)
PrincipleMethod /Feature Probe Detection Particlenon-destructive
RBSHRBS 500 Old RBS Double Semiconduc focussing tor magnet&MCP detector 500keV He 1Mev He Scattered ion 0.20.3nm 1% Attention is needed for surface treatment
SIMS
AES
TEMCross Section
STMScanning Tunnel electron needle Tunnel current Few %
XRRX Ray Reflection High Power X Ray X 210nm Few % Attention is needed for surface treatment
Cs/O ion Secondary ion 5nm 0.0001%
electron Auger electron 2nm 0.50% Charge up measure is needed
electron Transmission electron 0.01nm Few % Preparation of sample is needed
10nm 0.50%
Depth resolution Composition Sensitivity Reliability User-friendly Simplicity of use
Sensivity adjustment is needed
Recommended