High Power Electronics Design - Ansys · High Power Electronics Design Scott Stanton Technical...

High Power Electronics Design

Scott StantonTechnical DirectorAdvanced Technology Initiatives

Mark ChristiniLead Application Engineer

Objectives

• ANSYS Multiphysics Inverter Design Flow– High-Power System Design Concept

• IGBT Electro-Thermal Model– Average– Dynamic

• IGBT Package Thermal Model– Extracted from CFD

– EMI/EMC Analysis• Parameter Extraction: R, L, C• Radiated Emissions – Full Wave Effects

– IGBT Package Mechanical Stress Analysis• Thermal Stress• Electromagnetic Forces

IGBT Models in Simplorer

Maximum simulation speed:• Accurate static behavior

• Accurate thermal response

• No voltage and current transients

• Losses

• Suitable for system design (seconds)

Average IGBT Model Dynamic IGBT Model

Maximum simulation accuracy:• Sophisticated semiconductor based model

• Accurate static, dynamic and thermal behaviour

• Accurate gate voltage and current waveforms

• Losses

• Suitable for drive optimization, EMI/EMC (msec)

IGBT Characterization

Extraction of the IGBT Electro-Thermal Parameters

ristic

Measured Data

Fitted Curve

Extracted parameter values

The Average IGBT Model

• Three main parts:1) static core – V,I transfer and output characteristics2) energy calculation section – on/off and DC power3) thermal network- with or w/o external thermal link

• Parameters extracted through characteristic curves

Electrical Network Thermal Network

The Average IGBT Model

• Switching V and I waveforms are square• Switching losses are calculated at each switching period• Turn-ON/OFF power pulses are injected into thermal network• Amplitude of the rectangular power pulses are calculated

• PON/POFF – Switching Power • EON/EOFF – Energy losses • PDC – Conduction power dissipation; • TON/TOFF – Power injection pulse durations• Vce,sat – Saturation collector-emitter voltage

The Dynamic IGBT Model

• Dynamic IGBT shares the same static core as Average model• The switching energy (Eswitch) of the Dynamic IGBT model is

the direct integration of the switching voltage and current• This is the fundamental advantage over the average model

The Dynamic IGBT Model

• Dynamic IGBT accurately captures the switching waveforms• Suitable for EMI/EMC analysis

IGBT PackageThermal Model: Technical Background

• Temperature rise at any point in the system is the sum of the independently derived temperature increase attributable to each heat source in the system (superposition)

• Assumptions:– Temperature assumed to be a linear function of heat sources– This requires that the fluid flow is constant (for each study) and density

and all properties are constants

ANSYS Icepack

IGBT Thermal Model

⎥⎥⎥⎥

⎢⎢⎢⎢

⎥⎥⎥⎥

⎢⎢⎢⎢

⎥⎥⎥⎥

⎢⎢⎢⎢

)()()(

)()()()()()(

tttttt

n θϕϕ

ϕθϕϕϕθ

Foster network

Each matrix element is a complete thermal transient response curve

Implementation

IGBT Thermal Model Validation

• Simple 4-node system• Air at a constant speed of 1 m/s

Node 1 – self-heating Node 1 – Due to Source 3

Node 1 – Due to Source 2 Node 1 – Due to Source 4

IGBT Thermal Model Results

Temperature at Node 1 with constant heat flux applied at all 4 nodes

Temperature at Node 1 with time-variant heat flux

IGBT Inverter System

Line Current ProfileTemperature Profile

EMI/EMC: L,R,C Extraction

• Extract the resistance, inductance, capacitance and conductance (R,L,C) parameters of the entire package

Low Frequency High Frequency

Frequency can have a significant impact on the design performance

• Extracting parameters is straightforward as the nets are automatically assigned

EMI/EMC: L, R, C Extraction

Negative BarPositive Bar

Phase A

Phase B

Phase C

EMI/EMC: Mesh and Field Result

The structure is meshed using automatic and adaptive meshing

Current Distribution

EMI/EMC: Methodology

• The simulation outputs consist of the RLC matrices for different frequencies

Circuit Design based on Parametrized IGBT and Frequency Dependent Model

System Integration

+ΦGAINGAIN

CONSTCONST

EQUBLEQUBL

ANGRAD

-60+PWM_PER

-30+PWM_PER

EQUBLEQUBL

CONSTCONST -90+PWM_PER

EQUBLEQUBL

sourceA1

sourceA2

sourceB1

sourceB2

sourceC1

sourceC2

Magnet01

Magnet02

ECE - LINKECE - LINKECE - LINKECE - LINK

ECELink1

-22.50

0 240.00m100.00m

2DGraphSel1 NIGBT71.IC

Extract Power Loss

474.00m

200.00m

400.00m

100.00 1.00Meg1.00k 3.00k 10.00k 100.00k

2DGraphCon1

GS_I...FFT

EQUEQU

Ix := Ixa +

Ixa :=

Iyb := IB.I *

Iy := Iya + I

Ixc := IC.I *

Im := sqrt(Ix^2 +

Iyc := IC.I *

delta := ata

Ixb := IB.I *

System Integration

474.00m

200.00m

400.00m

100.00 1.00Meg1.00k 3.00k 10.00k 100.00k

2DGraphCon1

GS_I...

Freq. res.

Normalized S para.MagE@10m byspecified inputs

Multiplied magE plotsby Simplorer

Emission Test

Full Wave Effect

Ansoft HFSS

Emitted Fields

• The E field is very localized close to the module even at 100 MHz

• However, the very high power can lead to large values of E field even far from the module

• This design is fine at 110MHz.

mag E @ 100 MHz, Power = 10 000W

IGBT Thermal and Structural Analysis

Motivation and Methodology

• The high currents that flow through IGBT’s make them susceptible to failure due to the large stresses– Lorentz forces– Switching losses– Conduction losses

Electrical Circuit(Simplorer)

Switching Losses

Electromagnetics(Maxwell 3D)

Conduction Losses+

Lorentz Forces

Thermal stresses

Workflow

Simplorer V9Solve IGBT

Circuit

Terminal Current

Maxwell V14Solve for

Magnetostatics

Switching LossesANSYS Thermal

Solve Temperature

TemperatureDistribution

ANSYS MechanicalSolve

Static Structural

Stress and Deformation

ANSYS Workbench R13

Lorentz Forces

Ohmic Losses

Step 1

Circuit

Terminal Current

Magnetostatics

Solve Temperature

Static Structural

Lorentz Forces

Ohmic Losses

Create Simplorer Solution

• Launch ANSYS Workbench R13

• Drag and Drop a Simplorer Analysis System onto the project page

• Right click on Setup and select Edit to launch Simplorer V9

Simplorer V9

IGBT Circuit

• Input Pulse• IGBT Unit• Ammeter (Gives Terminal Current through IGBT)• Multiplier (Gives Switching Losses across IGBT)

Simplorer V9

Step 2

Circuit

Terminal Current

Magnetostatics

Solve Temperature

Static Structural

Lorentz Forces

Ohmic Losses

Create Maxwell System

• Select a Maxwell Analysis System

• Drag and drop it on Project Schematic page as a Standalone system

• Right click on “Geometry” tab and select Edit to Launch Maxwell

Maxwell V14

Complete IGBT Module

The Current through one phase is shared equally between two IGBT’s

Negative Terminal

Diodes (12 In total)

Phase A Phase B Phase C

One Leg

Positive Terminal

IGBTs (12 in total)

Maxwell V14

Material Definition

• Import the IGBT model• Set Solution type to

“Magnetostatic”• Set material properties of all

the objects• Diodes and IGBT units

which are OFF mode are applied with Vacuum material

Maxwell V14

Set Current Excitations

• Maximum current through IGBT was calculated by Simplorer which will be set as terminal current

• Set Current excitations of 20A to positive terminals

• Set Current excitation of 40A as Phase current – The value is set as

twice the terminal current

Maxwell V14

• Add solution Setup and solve the case with proper settings

• Plot J field to check the results• Close Maxwell and return to Project Page

Maxwell V14

Step 3

Circuit

Terminal Current

Magnetostatics

Solve Temperature

Static Structural

Lorentz Forces

Ohmic Losses

Create Steady State Thermal System

• Select Steady State Thermal Analysis system

• Drag and drop it on Solution tab of Maxwell 3D

• This will enable transfer of Ohmic losses calculated in Maxwell to ANSYS Mechanical

Steady State Thermal

Creating Material Data

• Right click on Engineering Data and select Edit to access Material database

• Add needed required material from database to the project and return to project page

• Double click on “Model” tab to launch ANSYS Mechanical

Steady State Thermal Setup

• Specify appropriate materials to all objects

• Apply mesh sizes on required objects and Generate Mesh

• Maxwell link

Setup (Contd…)

• Right Click on “Imported Load (Maxwell3DSolution) tab and select “Insert Heat Generation”

• Under “Geometry”, select all the volumes from the geometry and select “Import Load”

• Conduction losses will be mapped from Maxwell to ANSYS Mechanical

Setup (Contd…)

• In addition to conduction losses, we also need to apply switching losses of 49.5 W, which was calculated in Simplorer.

• We need to divide the switching losses by the volume of all bodies which carry current since the losses will be shared among them

• The resulting value is around 0.01683 W/mm3

• We will apply this value through command line.

• This value will add to the conduction losses already applied.

Temperature DistributionSteady State Thermal

Step 4

Circuit

Terminal Current

Magnetostatics

Solve Temperature

Static Structural

Lorentz Forces

Ohmic Losses

Create Static Structural System

• Select Static Structural system, Drag and drop it on the “Solution” tab of Steady State Thermal System

• Select “Solution” tab of Maxwell 3D system, drag and drop it on “Setup” tab of Static Structural

• Right click on “Setup” and select “Edit” to launch ANSYS Mechanical

Static Structural

Mapping Electromagnetic ForceThermal Loading

• Right Click on “Imported Load (Maxwell3DSolution) tab and select “Insert Body Force Density”

• Under “Geometry”, select Bondwires to which we want to apply Lorentz Forces

• The forces calculated by Maxwell will be applied to the Bondwires

Static Structural

Results

Equivalent StressMax Value: 120 MPa

DeformationMax Value: 0.044 mm

Static Structural

Summary

• ANSYS Workbench is used to simulate multiphysics problem of IGBT accurately taking into account:– Electric Circuits– Electromagnetics– Thermal– Stress

• On the Workbench platform, Simplorer, Maxwell3D and ANSYS Mechanical were used for various simulations and data transfer

Conclusion

• ANSYS Integrated Simulation Environment Allows Engineers to Analyze:– Average and Dynamic IGBT Models– Conducted Emissions: L,R,C Extraction– Thermal Effects: Network Model– Radiated Emissions– Thermal and Electromagnetic StressANSYS technology provides the most comprehensive state-of-the-art high power inverter solutions in the industry.

High Power Electronics Design - Ansys · High Power Electronics Design Scott Stanton Technical...

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