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Foundries, MMICs, systems
Rüdiger Follmann
Content
MMIC foundries
Designs and trends
Examples
2 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
3 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
MMIC foundries
IMST is a UMScertified design house
Foundries
MOSIS
Memberships
http://www.sandia.gov/index.html
GaAs in principal
3,4 and 6 inch production
Target markets: High power and linearity, low noise, broad band
Specials available (e.g. E/D mode or HBT and pHEMT on same wafer)
Frequencies up to 100 GHz
Radiation hard
4 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
GaAs foundriesOMMIC, France
5 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
GaAs foundriesUMS, France (+ USA)
6 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
WIN, TaiwanWIN, Taiwan
7 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
GaN4 inch to 6 inch wafers
Several foundries (TriQuint, UMS, Cree, Sandia and others)
Very high power possible
Defense market, radar, telecommunication
Single transistor devices available, very first MMICs launched (IMS 2008, Cree)
„Reliability“ problems
Frequencies up to 20 GHz and higher (100 GHz)
8 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
State-of-the-art
HRL examples
9
http://www.hrl.com/media/gan/gan.html
http://kiss.caltech.edu/mmic2008/presentations/micovic.pdf
Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Si(Ge)8 inch production
Combination of CMOS logic, ECL and BiCMOS
Frequencies up to 100 GHz
Complete transceiver chips possible (e.g. 60 GHz)
Well known foundries e.g. IBM (8HP)
Si LDMOS for high power10 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
SiGeIBM roadmap
11 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Trade-offsNoise figure
12 Foundries and MMICs Feb-09 © IMST GmbH - All rights reservedhttp://www.sirenza.com/pdfs/semiconductor%20technology.pdf
http://www.sirenza.com/pdfs/semiconductor technology.pdf
Trade-offs1/f noise
13 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Trade-offs
Costs
14 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Trade-offsPower and linearity
15 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
GaN devicesNon-linear model and measurement
16 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
A
BC
D
E
A = 33.4 dBmB = 32.9 dBmC = 32.4 dBmD = 31.9 dBmE = 31.4 dBm
E = 33.2 dBm (measured maximum)
GaN devicesModel verification
17 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
0 5 10 15 20 25 30 35
Input Power (dBm)
Out
put P
ower
(dB
m)
fundamentalsecond harmonicthird harmonicTOPASTOPASTOPAS
GaN mmwave power
18 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
GaN mmwave PA
19 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
GaN mmwave PA
20 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
21 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Integrated coplanar 24 GHz sensor
World‘s 1st 24 GHz coplanar sensor
designed at IMST
Rosemount 24 GHz level sensor
22 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Integrated GaAs circuits – 24 GHz sensor
-40
-30
-20
-10
0
10
0 2 4 6 8 10 12 14Input power [dBm]
Pout [dBm]
5th meas
5th TOPAS
5th Curtice
Simulated using
Frequency times 5 multiplier
http://www.mmic-design.de/topas/f_topas.htm
23 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
GaAs circuits – 10 GHz LNA
1
1,4
1,8
2,2
2,6
3
6 8 10 12 14 16 18
f [GHz]
NF [dB]
Sim.
Meas.
Simulated using
Low noise amplifier
http://www.mmic-design.de/topas/f_topas.htm
Core Chip Design : 2NLNA4PS2Specifications:
Ku-band core chip including the 2-stage LNA and the 4-bit phase shifter
Technology: OMMIC - ED02AH
LNA bias supply: VG1,2 = -0.2 V, VD1,2 = 2.0 V, ID1 = 28.2 mA, ID2 = 29.0 mA
PS control voltages: VC = 0 V / -2 V
f = 10.7 ... 12.7 GHz
S11 ≤ -13.3 dB (all states)
S22 ≤ -11.6 dB (all states)
S21 = 13.2 ... 14.4 dB (all states)
RMS amplitude error = 0.4 dB
RMS phase error = 2.6 °
A = 2.17 × 2.05 mm2 = 4.45 mm2
⇒ including half dicing street
⇒ including DC pads (#8) for the PS control (not necessary if using the DC control circuit)
⇒ excluding DC control circuit (serial to parallel converter + buffers)
24 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Core Chip Design : 2NLNA4PS2Layout:
25 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Momentum simulation
Higher integration possible
26 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Size reduction
27 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Including logic
28 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
System example synthesizer
29 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Large size (LO)
Heavy
Single frequency
http://www.saabgroup.com/en/ProductsServices/BusinessUnit/saab_ericsson_space.htmhttp://products.saabgroup.com/PDBWebNew/GetFile.aspx?PathType=ProductFiles&FileType=Files&Id=6071
small andintegrated chip
http://www.saabgroup.com/en/ProductsServices/BusinessUnit/saab_ericsson_space.htmhttp://products.saabgroup.com/PDBWebNew/GetFile.aspx?PathType=ProductFiles&FileType=Files&Id=6071
30 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Phase noise
2
8)( ⎟⎟
⎠
⎞⎜⎜⎝
⎛=
m
r
Lm f
fPQ
FkTGfL
G: Gain of active partF: Noise figure of active partQL: Loaded Q of resonatorfr: Resonance frequencyfm: Offset frequency from
carrierP: Output power of active partS21: Transmission coefficient of
resonator at resonance021 1
1QQ
GS L−==
Simplified Leesonequation
31 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
VCO requirement
High quality factor of the resonator
Large voltage swing (high output power)
High breakdown voltage for active part transistor technology
Use a transistor with low 1/f noise
32 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
VCO
ColpittsPhase noise: -115 dBc/Hz
@ 1 MHz offset (20 GHz)
33 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
PLLs
Close to the carrier phase noise is determined by the reference crystal
Inside PLL loop the phase noise of a synthesizer is determined by the PLL (phase detector). VCO noise is attenuated.
Output PLL loop the phase noise of a synthesizer is determined by the VCO phase noise
34 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Integer-N PLL with reference divider
How to generate arbitrary frequencies?
Build a programmable 1/N-divider
35 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
36 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Continous division (example x=8)
N=(x+1)*S+x*(P-S)=8*P+S, P>S...
P=6,S=0..6: N=8*6+0..8*6+7=48..54, 55 not possible
P=7,S=0..7: N=8*7+0..8*7+7=56..63P=8,S=0..7: N=8*8+0..8*8+7=64..71...
Divide S times by x+1 and P-S times by x
37 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Simplified fractional-N PLL example
Ratio: 10.1: Divide 9 times by 10 and one time by 11 (next page)
38 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Accumulator
This division schema generates large spurs.
Sigma Delta Modulator (SDM)
39 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Modulator input: Only fractional part xfSDM generates series of integer numbers ni
, 2µ values are available for MMni ∈
∑=
∞→==
N
iiNif
nN
nx1
1lim
Time average value at SDM output
Example: 2, -4, -2, 3, 0, 3 –1, -3, 2, 1, ... for xf = 0.1
40 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Synthesizer architecture (1)
Synthesizer architecture (2)
41 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
42 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Synthesizer architecture (3)
43 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
SiGe DesignWorld best 1-chip synthesizer
250 MHz-24 GHz PLL
Integrated 17…20 GHz or 8…12 GHz VCO
Fractional-N
Measurement results
44 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
45 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Synthesizer application test boardPC interface
Many test ports
46 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Packages
Magnetic field
BGA simulationEquivalent circuitsS-parameter files
http://www.empire.de/
World smallest phase shifter (ka)
47 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Size 960 x 360 µm2, Core 620 x 210 µm2
VD = 3 V, VC (B0-B4) = 0 V / 3 V (active / not active)
Phase diagram
48 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Any questions?
49 Foundries and MMICs Feb-09 © IMST GmbH - All rights reserved
Foundries, MMICs, systemsContentMMIC foundriesGaAs in principalGaAs foundriesGaAs foundriesWIN, TaiwanGaNState-of-the-artSi(Ge)SiGeTrade-offsTrade-offsTrade-offsTrade-offsGaN devicesGaN devicesGaN mmwave powerGaN mmwave PAGaN mmwave PAIntegrated coplanar 24 GHz sensorIntegrated GaAs circuits – 24 GHz sensorGaAs circuits – 10 GHz LNACore Chip Design : 2NLNA4PS2�Core Chip Design : 2NLNA4PS2�Momentum simulationSize reductionIncluding logicSystem example synthesizerPhase noiseVCO requirementVCOPLLsInteger-N PLL with reference dividerHow to generate arbitrary frequencies?Continous division (example x=8)Simplified fractional-N PLL exampleAccumulatorSigma Delta Modulator (SDM)Synthesizer architecture (1)Synthesizer architecture (2)Synthesizer architecture (3)SiGe DesignMeasurement resultsSynthesizer application test boardPackagesWorld smallest phase shifter (ka)Phase diagramAny questions?
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