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Focus Product Selector Guide
Focus Product Selector Guide
www.microchip.com
www.microchip.com2
Microchip: A Partner in Your Success
Microchip is a leading provider of semiconductor supplier of smart, connected and secure embedded control solutions, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Offering outstanding technical support along with dependable delivery and quality, Microchip serves over 125,000 cus-tomers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets worldwide.
8-bit MicrocontrollersMicrochip’s PIC® and AVR® microcontrollers (MCUs) represent two dominant architectures for embedded design. With a combined 45 years’ experience developing commercially available and cost-effective 8-bit MCUs, Microchip is the supplier of choice for many due to its strong legacy and history of innovation in 8-bit. Our current lineup of 8-bit PIC and AVR MCUs incorporates the latest technologies to enhance system performance while reducing power consumption and development time. With more than 1,200 devices, Microchip offers the industry’s largest 8-bit portfolio. Key features include Core Independent Peripherals, low-power performance with picoPower® and eXtreme Low Power (XLP) technology, industry-leading robustness driven by best-in-class EMI/EMC performance and simplified development with our suite of easy-to-use development tools. For more information visit: www.microchip.com/8bit.
16-bit PIC MicrocontrollersThe PIC24 is a cost-effective, eXtreme Low Power (XLP) family of MCUs, featuring devices with dual partition memory up to 1024 KB of Flash and a rich set of Core Independent Periph-erals (CIPs). Our portfolio offers an upgrade in features for applications that are pushing the boundaries of 8-bit MCU capabilities, offering more memory, more pins and faster peripherals in the same ecosystem for easy migration. The PIC24 MCUs also feature hardware safety features. For more information visit: www.microchip.com/16bit.
dsPIC® Digital Signal ControllersThe dsPIC family of Digital Signal Controllers (DSCs) features a Digital Signal Processor (DSP) engine with up to 100 MIPS performance capable of high-efficiency, high-precision variable speed, constant torque PI control and Field Oriented Control (FOC) motor control. Equipped with high-level analog integra-tion and capable of operating up to 150°, the dsPIC33 family is ideal for PMSM, ACIM and BLDC motor control in industrial, medical, automotive and consumer applications.
Many dsPIC33 DSCs are “Functional Safety Ready” with integrated safety features and offer safety manuals, FMEDA reports and diagnostic software. For more information visit: www.microchip.com/16bitfunctionalsafety.
32-bit MicrocontrollersFrom simple embedded control to advanced graphics, secure Internet of Things (IoT) and functional safety applications, Microchip portfolio of 32-bit MCUs can meet your design challenge. Spanning a wide range of options—from offering the industry’s lowest power consumption to delivering the highest performance—these MCUs run at up to 600 DMIPs and deliver ample code and data space with up to 2048 KB Flash and 512 KB RAM with 32 MB integrated DDR2 DRAM or 128 MB externally addressable options. They are sup-ported by novel and easy-to-use software solutions to speed up your application development. For more information visit: www.microchip.com/32bit.
32-bit Arm® MicroprocessorsAs you push beyond the boundaries of 32-bit MCUs, the SAM9 (ARM9) and SAMA5 (Cortex® A5) microprocessor (MPU) families provide the power and performance needed for demanding applications. They feature up to 600 MHz (942 DMIPS) operation and System-in-Package options with integrated DDR2 or LPDDR2 memory and System-on-Mod-ules. Microchip’s MPUs offer a rich set of peripherals and user interfaces including Gigabit Ethernet MACs, high-speed USB, hardware video decoding, capacitive touch, 12-bit CMOS im-age (camera) sensors, I2S audio interfaces and advanced 24-bit graphic LCD controllers with overlays. They deliver market-leading low power (down to 0.3 mW sleep) and advanced security features needed for Internet-connected gateways and cost-sensitive industrial and consumer applications. The MPU devices come with free Linux® OS and third-party tools and software, and low-cost hardware development boards are available to ease development. For more information visit: www.microchip.com/mpu.
Analog and Interface ProductsMicrochip’s integrated analog technology, peripherals and features are engineered to meet today’s demanding design requirements. Our extensive spectrum of analog products addresses thermal management, power management, battery management, mixed-signal, linear, interface and safety and security solutions. Our broad portfolio of stand-alone analog and interface devices offers highly integrated solutions that combine various analog functions in space-saving pack-ages and support a variety of bus interfaces. Many of these
Focus Product Selector Guide 3
Microchip: A Partner in Your Success
devices support functionality that enhances the analog features currently available on PIC microcontrollers. Microchip extends power solutions with a broad portfolio of Silicon diodes, MOSFETs and IGBTs and Silicon Carbine (SiC) MOSFETs and Schottky Barrier Diodes (SBDs). For more information visit: www.microchip.com/analog.
Security and Authentication ProductsMicrochip offers a series for secure key storage products with the CryptoAuthentication devices, CryptoAutomotive devices and TPM. For applications such as disposables, accessories and nodes used in home automation, industrial networking, medical and other applications, these devices employ secure, hardware-based cryptographic key storage and cryptographic countermeasures such as active anti-tamper protection, side channel attack protections, which offer higher security than software-based solutions. To further reduce complexity and cost of your supply chain, Microchip also offer a secure key provisioning service integrated as part of the Trust Platform program. For more information visit: www.microchip.com/SecureElements.
Timing and Communication ProductsMicrochip has an expansive, wide-ranging clock and timing portfolio that delivers total solutions for your complex timing requirements. Our oscillator products offer both low-jitter and low-power online-configurable products with the option of choosing a traditional quartz-based solution or going with our MEMS silicon-based resonator products. The clock generation line offers online configurable, single chip, multiple-frequency clock tree solutions. Rounding out the portfolio, our clock and data distribution product line includes one of the industry’s largest portfolios of buffers, logic translators and multiplexers.
With the right combination of products, configuration tools and technical support, Microchip’s Timing and Communications products are ideal for all designs, from simple to high- performance systems. For more information visit: www.microchip.com/timing.
Real-Time Clock/CalendarMicrochip offers a family of highly integrated, low-cost Real-Time Clock/Calendar devices with battery backup capability, digital trimming, plus on-board EEPROM and SRAM memory. For more information visit: www.microchip.com/clock.
Memory ProductsMicrochip’s broad portfolio of memory devices includes Serial EEPROM, Serial SRAM, Serial Flash, Serial NVSRAM, Serial EERAM, Parallel EEPROM, Parallel OTP (One-Time Programmable) and Parallel Flash devices. Our innovative, low-power designs and extensive testing have ensured industry-leading robustness and endurance, along with best-in-class quality, at low costs. For more information visit: www.microchip.com/memory.
Wireless ProductsThe Microchip wireless portfolio is focused on offering ex-tremely low-power operation and is designed for sensing or command/control operation products. This extensive portfolio is comprised of solutions for Wi-Fi®, Bluetooth®, LoRa® technol-ogy, 802.15.4 (such as zigbee® or MiWi™ wireless networking protocol) along with proprietary 2.4 GHz and Sub-GHz com-munications. The TimberwolfTM platform is the latest-generation audio processor. The hardware architecture is ideal for today’s growing need for hands-free communications and Human To Machine (H2M) voice interfaces. This field-upgradable platform is designed for multiple end-market applications. For more information visit: www.microchip.com/wireless.
High-Throughput USB and Ethernet Interface SolutionsHigh-speed networking is the backbone of many industrial, IoT, consumer and automotive applications. Microchip offers a complete portfolio of Ethernet PHYs, switches, controllers and bridge devices, enabling up to 10 Gigabit-speed communica-tions in harsh environments. For high-speed telecommunica-tions networks deployed by service providers and hyperscalers, 400 Gigabit PHYs enable application ranging including data center and edge routers, switches and optical transport platforms.
The USB offering spans low cost to SuperSpeed Plus and incorporates value-rich solutions such as USB SmartHub controllers, power delivery and charging, transceivers/switches, Flash media controllers and security solutions. For more information visit www.microchip.com/usb and www.microchip.com/ethernet.
www.microchip.com4
MOST® TechnologyMedia Oriented Systems Transport (MOST) technology is the accepted standard in high-bandwidth automotive infotain-ment systems. It is broadly standardized from the physical layer up to the application level. Various speed grades and physical layers are available. The highly flexible and scal-able MOST platform can transmit A/V streaming, packet, and isochronous and control data. It is also approved to transmit DVD and Blu-ray™ content using Digital Transmis-sion Content Protection (DTCP). For more information visit: www.microchip.com/automotiveproducts.
Embedded Controllers and Super I/OMicrochip’s computing-related products include state-of-the-art embedded controllers based on the innovative eSPI bus tech-nology, Input/Output (I/O) devices, keyboard controllers, root of trust, secure boot and authentication devices and system-management devices. These components serve the computing industry, including major OEMs and motherboard manufactur-ers worldwide. Applications include traditional computing applications such as notebooks and desktops, and embedded computing which is found in a variety of applications such as information kiosks, networking equipment, automatic teller machines and devices for the oil and gas industries. For more information visit: www.microchip.com/computing.
Touch, Multi-Touch and 3D Gesture ControlMicrochip offers the most feature-rich solutions in capacitive sensing for applications ranging from single-touch buttons and proximity sensing to touchpads, touchscreens and free-space 3D gesture control. Turnkey solutions (maXTouch® technology) as well as MCU/MPU solutions (PIC, AVR, PIC32 and SAM) come with Graphical User Interface (GUI) software tools and code configurators for easy design-in cycles that shorten your time to market. For more information please visit: www.microchip.com/touch.
Power over Ethernet (PoE) Systems and ICsMicrochip offers a comprehensive end-to-end portfolio of PoE solutions comprised of PoE ICs and PoE Injectors/Systems. Microchip’s PoE ICs product line is the broadest in the market with PSE ICs featuring 1 to 8 ports, presenting the highest integration level and lowest total BOM cost. The PD ICs line provides solutions with and without integrated PWM control-lers and is used as a compact way to convert PoE input power to one or more output voltages. The PoE Injectors/Systems line includes stand-alone PoE Injectors/Midspans and Switches ranging from single-port to multi-port solutions. These
off-the-shelf products can be added by customers to their portfolio while saving the development efforts on their side. The PoE Injectors support best-of-breed PoE deployments mak-ing it easier than ever to install PoE-enabled Ethernet-based devices in both indoor, outdoor and industrial environments. The PoE multi-port injectors increase the flexibility and longevity of Ethernet networks.
Optical Networking SolutionsMicrochip OTN processors and OTN PHYs offer leading innovation, integration and power for Data Center Interconnect (DCI) and metro and regional optical transport networks. They deliver the quickest time to market and lowest R&D expense for the OEM and minimize the total cost of ownership for the service provider. We also offer a comprehensive portfolio of op-tical networking solutions for Synchronous Optical Networking/Synchronous Digital Hierarchy (SONET/SDH), T1/E1 and Fiber-to-the-Home/Passive Optical Network (FTTH/PON) protocols. For more information visit: www.microchip.com/design-centers/high-speed-communications/optical-networking
FPGAsOur unique, low-power, non-volatile technology sets Micro-chip’s Field Programmable Gate Arrays (FPGAs) apart from traditional SRAM-based devices. With an extensive heritage of reliability, Microchip’s FPGAs and SoCs meet demands for low power, and security in a variety of applications.
In wired and wireless communications, defense and avia-tion, and industrial embedded applications, Microchip FPGAs deliver ample resources at the lowest power, highest reliability and greatest security. Microchip FPGAs demonstrate value in applications such as hardware acceleration, artificial intelligence, image processing and edge computing with robust DSP and memory resources.
Storage AdaptersMicrochip’s Smart Storage stack delivers one of the industry’s broadest portfolios of trusted storage solutions that reliably move, manage, and store critical data and digital content. Adaptec® SmartRAID RAID adapters and SmartHBA and HBA Host Bus Adapters deliver the security and performance needed by critical applications, lower your power footprint and scale for future growth. Our high quality, reliable solutions are backed by decades of experience and technical support to guide you from purchase to implementation of your design. For more information visit: www.microchip.com/smartstorage
Focus Product Selector Guide 5
Table of Contents8-bit PIC Microcontrollers . . . . . . . . . . . . . . . . . . . . . 68-bit AVR Microcontrollers . . . . . . . . . . . . . . . . . . . . 716-bit Microcontrollers and dsPIC Digital Signal Controllers . . . . . . . . . . . . . . . . . . . . . . 932-bit Microcontrollers . . . . . . . . . . . . . . . . . . . . . . 1232-bit Microprocessors . . . . . . . . . . . . . . . . . . . . . . 15Analog and Interface Products . . . . . . . . . . . . . . . . 17Thermal Management . . . . . . . . . . . . . . . . . . . . . . . 17Power Management . . . . . . . . . . . . . . . . . . . . . . . . 17Display and LED Drivers . . . . . . . . . . . . . . . . . . . . . 24High-Voltage Interface . . . . . . . . . . . . . . . . . . . . . . 25Linear . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Mixed Signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Interface (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Interface (LIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Ultrasound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31CO and Smoke Detector ICs . . . . . . . . . . . . . . . . . 32Motor Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Timing and Communication Products . . . . . . . . . . . 33Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33Clock and Data Distribution . . . . . . . . . . . . . . . . . . 34High-Speed Communication . . . . . . . . . . . . . . . . . 48Memory Products . . . . . . . . . . . . . . . . . . . . . . . . . . 49Wireless Products . . . . . . . . . . . . . . . . . . . . . . . . . . 55Wireless Audio . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56USB Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57Ethernet Products . . . . . . . . . . . . . . . . . . . . . . . . . 58Automotive Products . . . . . . . . . . . . . . . . . . . . . . . 61Embedded Controllers and Super I/O . . . . . . . . . . . 63Security Products . . . . . . . . . . . . . . . . . . . . . . . . . . 63Touch and 3D Gesture Control . . . . . . . . . . . . . . . . 64Power Discretes and Modules . . . . . . . . . . . . . . . . 65Power over Ethernet . . . . . . . . . . . . . . . . . . . . . . . . 70FPGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74Data Center Solutions . . . . . . . . . . . . . . . . . . . . . . . 76Terms and Definitions . . . . . . . . . . . . . . . . . . . . . . . 79
PCIe SolutionsMicrochip’s Switchtec PCIe switches are the industry’s highest-density, lowest-power PCIe switches, enabling solutions for a wide variety of systems from data center equipment, GPU workstations/servers, GPU arrays, pooled storage/compute/networking, multi-host architectures, Just a Bunch Of Flash (JBOF), PCIe SSD enclosures, flash arrays, high-density serv-ers, communications, and any applications requiring low-power and high-reliability PCIe switching.
The Switchtec PFX Gen 3 and Gen 4 Fanout PCIe switches are high-reliability, low-power PCIe switches supporting up to 100 PCIe lanes, advanced error containment, comprehensive diagnos-tics and debug capabilities, and a wide breadth of I/O interfaces.For more information visit: www.microchip.com/PCIeSwitches
www.microchip.com6
8-bi
t PIC
® M
icro
cont
rolle
rs
Prod
uct F
amily
Pin Count
Program Flash Memory (KB)
RAM (KB)
Data EE (B)
Inte
llige
nt A
nalo
g W
avef
orm
Con
trol
Logi
c an
d M
ath
Safe
ty a
nd
Mon
itorin
gC
omm
unic
atio
nsU
ser
Inte
rfac
e
Low
Po
wer
an
d Sy
stem
Fl
exib
ility
Packages
ADC (# of bits)
CompHSComp
DAC (# of bits)
OPA
SlopeComp / PRGZCDCCP/ECCP10-bit PWM16-bit PWMCOGCWGNCODSMHLT (8-bit)Universal TimerNCO (20-bit)SMT (24-bit)RTCCTEMP/TSCLCMULTMathACCCRC/SCAN
HLT
WWDT
USART
UART with Protocols
I²C/SPI
USB with ACT
LIN CapablemTouch® Sensing HCVDLCD w/ charge pumpPPSIDLE/DOZE/PMDDMA/VIDIA/MAP
PIC
10(L
)F3X
X6
384–
896
B0.
064
HEF
8ü
üü
üüü
üSO
T-23
, DFN
, PDI
P
PIC
16F1
52XX
8-40
3.5-
280.
5-2
–10
üü
üüüü
ü1
üü
üü
üDF
N, S
OIC
, SSO
P, T
SSO
P, V
QFN
, PD
IP, T
QFP
PIC
12/1
6 LF
155X
/6X
14–2
07–
141.
024
HEF
10(2
)ü
üü
üüüü
PDIP,
SO
IC 1
50m
il, TS
SOP,
QFN
, SS
OP
208m
il, UQ
FN, S
OIC
300
mil,
SPDI
P, T
QFP
PIC
16(L
)F14
5X14
–20
141.
024
HEF
10ü
üü
üü
üüüü
PDIP,
SO
IC 1
50m
il, TS
SOP,
QFN
, UQ
FN, S
OIC
300
mil,
SSO
P 20
8mil
PIC
1X(L
)F15
7X8–
201.
75–1
41.
024
HEF
10ü
5ü
üü
üü
üü
üDF
N, M
SOP,
PDI
P, S
OIC
150
mil,
UDFN
, TSS
OP,
UQ
FN, P
DIP,
SO
IC
300m
il, SS
OP
208m
il
PIC
16(L
)F15
3XX
8–48
3.5–
282.
048
HEF
10ü
5üüü
üü
üü
üü
üü
2ü
üü
üü
üPD
IP, S
OIC
150
mil,
TSSO
P, U
QFN
, SO
IC 3
00m
il, SS
OP
208m
il, Q
FN,
SPDI
P, T
QFP
PIC
1X(H
V)F7
52/5
38–
141.
75–3
.50.
128
–10
ü5/
9ü
SCü
üü
üü
DFN,
PDI
P, S
OIC
150
mil,
TSSO
P, Q
FNPI
C1X
(L)F
161X
8–14
3.5
0.25
6HE
F10
ü8
üü
üü
üü
üüüü
üDF
N, P
DIP,
SO
IC 1
50m
il, TS
SOP,
QFN
PIC
16(L
)F16
1X (3
)14
–20
7–14
1.02
4HE
F10
ü8
üüü
üü
üüü
üüüüü
üüü
üPD
IP, S
OIC
150
mil,
TSSO
P, Q
FN, S
OIC
30
0mil,
SSO
P 20
8mil,
UQFN
, TQ
FPPI
C18
-Q40
/114
-20
16-3
21-
451
212
(4)ü
8ü
(5)
üü
üüüüü
üüüü
üüü
21ü
üüü
üüüü
SOIC
, TSS
OP,
QFN
, PDI
P
PIC
16(L
)F17
0X/7
1X14
–40
3.5–
282.
048
HEF
10ü
5/8ü
üüü
üü
üüü
üü
üüü
üPD
IP, S
OIC
150
mil,
TSSO
P, Q
FN,
SOIC
150
mil,
UQFN
, SO
IC 3
00m
il, SS
OP
208m
il
PIC
16(L
)F17
6X/7
X14
–40
7–28
2.04
8HE
F10
ü5/
10üüüüüüü
üüü
üü
üü
üüü
üPD
IP, S
OIC
150
mil,
TSSO
P, Q
FN,
SOIC
300
mil,
SSO
P 20
8mil,
SPDI
P,
UQFN
, TQ
FP
PIC
16(L
)F18
3XX
8–20
3.5–
142.
048
256
10ü
5üü
üüü
üüü
üü
üü
üü
PDIP,
SO
IC 1
50m
il, UD
FN, T
SSO
P,
UQFN
, SO
IC 3
00m
il, SS
OP
208m
il
PIC
16(L
)F18
4XX
14-2
87-
282.
048
256
12(4
)ü
5üüü
üü
üüü
üü
üü
üüü
üü
üUQ
FN, P
DIP,
SO
IC, T
SSO
P, S
SOP,
VQ
FN, S
PDIP
PIC
16(L
)F18
8XX
28–4
07–
564.
096
256
10(4
)ü
5üüü
üüüü
üü
üü
üüüü
üüüü
üü
QFN
, SO
IC 3
00m
il, SP
DIP,
SSO
P 20
8mil,
UQFN
, PDI
P, T
QFP
PIC
18-Q
1028
-40
16-1
281-
3.6
256- 1K
10(4
)ü
5üüü
üüü
üüü
üüü
2ü
üüü
üü
QFN
, SO
IC, S
PDIP,
SSO
P, V
QFN
, PD
IP, T
QFP
PIC
18-Q
4328
-48
32-1
282-
810
2412
(4)ü
8üü
üüüüü
üüüü
üüü
41ü
üüü
üüüü
QFN
, SO
IC, S
PDIP,
SSO
P, V
QFN
, PD
IP, T
QFP
PIC
18-Q
84 (6
)28
-48
64-1
288-
1310
2412
(7)ü
8üü
üüüüüüüü
üü
üüü
32ü
üü
üüüü
VQFN
, PDI
P, S
OIC
, SSO
P,TQ
FPPI
C16
(L)F
191X
X28
–64
14–5
64.
096
256
12(4
)ü
5üüü
üü
üüüü
üüü
üüüüüüü
üQ
FN, T
QFP
PIC
18-K
4028
–64
16–1
283.
728
256– 1K
10(4
)ü
5üüü
üüü
üü
üüü
5ü
üüü
üü
QFN
, SO
IC 3
00m
il, SP
DIP,
SSO
P 20
8mil,
UQFN
, PDI
P, T
QFP
PIC
18-K
4228
–48
16–1
288.
192
256– 1K
12(4
)ü
5üüü
üüüü
üü
üüü
üüü
11ü
üüü
üüüü
QFN
, SO
IC 3
00m
il, SP
DIP,
SSO
P 20
8mil,
UQFN
PIC
18-J
9464
–100
32–1
284.
096
–12
üü
üü
4üüüü
üüü
QFN
, TQ
FPNo
tes:
(1) I
n ad
ditio
n to
sta
ndar
d 8-
bit a
nd 1
6-bi
t tim
ers
(2) I
ndep
ende
nt D
ual A
DC M
odul
es (3
) PIC
16F1
615/
9 in
clude
an
angu
lar ti
mer
. (4)
ADC
C: A
nalo
g-to
-Dig
ital C
onve
rter w
ith C
ompu
tatio
n (5
) PIC
18-Q
41 h
as a
n O
PAM
P (6
) Dev
ice is
CA
N-FD
cap
able
(7) A
nalo
g-to
-Dig
ital C
onve
rter w
ith C
ompu
tatio
n an
d Co
ntex
t Sw
itchi
ng (6
) CAN
-FD
& JT
AG c
apab
le
Focus Product Selector Guide 7
8-bi
t AVR
® M
icro
cont
rolle
rs
Prod
uct
Fam
ily
Pin Count
Program Flash Memory (KB)
SRAM (KB)
Supply Voltage
Speed (MHz) Single Cycle Instruction: MHz = MIPS
Inte
llige
nt A
nalo
gW
avef
orm
C
ontr
olTi
min
g an
d M
easu
rem
ents
Logi
c,
Cryp
to a
nd
Mat
h
Safe
ty a
nd
Mon
itorin
gCo
mm
unic
atio
nsU
ser
Inte
rfac
eSy
stem
Fle
xibi
lity
ADC (# of bits)
ADC (# of channels)
Comparators
ADC Gain Stage
DAC (# of bits)
Temperature Sensor
Internal Voltage Reference
Zero Cross Detector (ZCD)
8-bit PWM
16-bit PWM
Quadrature DecoderWaveform Extension (WeX)Real-Time Counter8-bit Timer/Counters12-bit Timer Counter
16-bit Timer/Counter
CCL
MULTCrypto (AES/DES)CRC/SCANPORBODWDT
USART
USB
I²C
SPI
IRCOM
Serial Number
QTouch® Technology
QTouch Technology with PTC(2)
LCD
External Bus Interface
DMA ChannelsEvent SystemSleepWalkingSleep ModespicoPower® Technology
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IN p
ort a
lso 2
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iphe
ral T
ouch
Con
trolle
r 3: O
nly o
n th
e AT
tiny5
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4: N
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n th
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tiny2
12/2
14/4
12/4
14/4
16 5
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on
the
ATm
ega1
281/
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6: O
nly o
n th
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meg
a328
PB 7
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on
the
C3 a
nd C
4 8:
UAR
T on
ly LI
N Po
rt als
o
www.microchip.com8
8-bi
t PIC
and
AVR
MC
U T
erm
inol
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INTE
LLIG
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ANAL
OG
: Se
nsor
Inte
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g an
d Si
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Cond
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ADC
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to-D
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bit A
DC
ADC
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log-
to-D
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Prog
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mab
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in s
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ffere
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p: C
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ter
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mab
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tern
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nnec
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r use
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inte
grat
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nalo
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ro C
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Det
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AC h
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volta
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Gen
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purp
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16-b
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cen
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Opt
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mot
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pow
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men
t with
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Coun
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H:
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c an
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ombi
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tom
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and
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Hard
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ultip
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two
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ta e
ncry
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be e
asily
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form
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r bot
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tern
ally
stor
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ata
or fo
r sm
all e
xter
nal d
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pack
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TY A
ND
MO
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ORI
NG
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Mon
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ult D
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CRC
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Cy
clica
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unda
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Chec
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with
Mem
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Scan
Auto
mat
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calc
ulat
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RC c
heck
sum
of P
rogr
am/D
ataE
E m
emor
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r NVM
inte
grity
POR:
Pow
er-O
n Re
set
Keep
s th
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vice
in re
set u
ntil t
he v
olta
ge is
hig
h en
ough
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sure
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safe
sta
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of lo
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mem
ories
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wno
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tor
Prev
ents
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onito
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orre
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rogr
am o
pera
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nsta
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mer
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onfig
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MM
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S: G
ener
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dust
rial,
Ligh
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mot
ive
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nive
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Sync
hron
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Asyn
chro
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Rec
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itter
1. G
ener
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rpos
e se
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omm
unica
tions
2. S
uppo
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r LIN
USB
: Uni
vers
al Se
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usSu
ppor
t for
Ful
l-Spe
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SB 2
.0 d
evice
pro
files
I² C:
Inte
r-Int
egra
ted
Circ
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Gen
eral
purp
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2-w
ire s
erial
com
mun
icatio
ns
SPI:
Seria
l Per
iphe
ral In
terfa
ceG
ener
al pu
rpos
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wire
ser
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omm
unica
tions
IRC
OM
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frare
d Co
mm
unica
tion
Mod
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Enco
des
and
deco
des
data
acc
ordi
ng to
the
IrDA
com
mun
icatio
n pr
otoc
ol
Seria
l Num
ber
Fact
ory
prog
ram
med
uni
que
ID u
sefu
l in w
ired
and
wire
less
com
mun
icatio
ns
USE
R IN
TERF
ACE:
Cap
acitiv
e To
uch
Sens
ing
and
LCD
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rol
LCD
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quid
Cry
stal
Disp
layHi
ghly
inte
grat
ed s
egm
ente
d LC
D co
ntro
ller
QTo
uch®
: M
icroc
hip
Prop
rieta
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Touc
h Te
chno
logy
Prov
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a s
impl
e-to
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sol
utio
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reali
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uch-
sens
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inte
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uch
with
PTC
: Q
Touc
h w
ith
Perip
hera
l Tou
ch C
ontro
ller
Prov
ides
a s
impl
e-to
-use
sol
utio
n to
reali
ze to
uch-
sens
itive
inte
rface
s w
ith a
Per
iphe
ral T
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Con
trolle
r
LOW
PO
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AN
D S
YSTE
M F
LEXI
BILI
TY:
Low
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olog
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riphe
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nd In
terc
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cts
DM
A: D
irect
Mem
ory
Acce
ssM
oves
dat
a be
twee
n m
emor
ies a
nd p
erip
hera
ls w
ithou
t CPU
ove
rhea
d,
impr
ovin
g ov
erall
sys
tem
per
form
ance
and
effic
iency
Even
t Sys
tem
Flex
ible
rout
ing
of p
erip
hera
l eve
nts,
abi
lity to
con
trol p
erip
hera
l in
depe
nden
t fro
m th
e CP
U
Exte
rnal
Bus
Inte
rface
High
ly fle
xible
mod
ule
for i
nter
facin
g ex
tern
al m
emor
ies a
nd m
emor
y-ad
dres
sabl
e pe
riphe
rals
pico
Pow
er® T
echn
olog
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w-p
ower
tech
nolo
gy
Slee
p M
odes
Low
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er s
avin
g m
odes
, IDL
E, p
ower
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n, p
ower
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e, s
tand
by
and
exte
nded
sta
ndby
Slee
pWal
king
Abilit
y to
put
the
CPU
core
to s
leep
until
a re
levan
t eve
nt o
ccur
s
Focus Product Selector Guide 9
16-b
it M
icro
cont
rolle
rs a
nd d
sPIC
® D
igita
l Sig
nal C
ontr
olle
rs
Prod
uct F
amily
Maximum MIPS
Program Flash Memory (KB)
RAM (KB)
Pin Count
Perip
hera
l Fun
ctio
n Fo
cus
Pack
ages
Inte
llige
nt
Anal
ogW
avef
orm
Con
trol
Tim
ing
and
Mea
sure
men
tsSa
fety
and
M
onito
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Com
mun
icat
ion
Use
r In
terf
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Secu
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Dat
aSy
stem
Fle
xibi
lity
ADC resolution1
DAC resolution2
CVref
HS CompOPA/PGASCCPMCCPPWMMC PWMSMPS PWMIC and OC
PWM Resolution (ns)
16-bit Timer
32-bit Timer
RTCC
QEI
LVDWDT/WWDTDMTCRCClass B Safety3
Functional Safety ReadyUSBCANUARTLINIrDA®
I²CSPII2S™SENTParallel Port
LCD (Segments)
GFXCryptographic EngineSecure Key Storage
RNG
Dual Partition FlashCLCPPSPTGDMAIDLE, SLEEP and PMDDOZEXLPVbat
PIC
24 F
amily
PIC
24FJ
64G
A004
1616
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4-8
28–4
410
üü
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üü
üü
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üü
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PIC
24FJ
64G
A104
1632
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828
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10ü
üü
15ü
üüü
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üüüüü
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üüü
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PIC
24FJ
64G
B004
1632
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828
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10ü
üü
15ü
üüü
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üüüüüü
üü
üüü
TQFP
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, QFN
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PIC
24FJ
128G
A010
1664
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864
–100
10ü
üü
62ü
üü
üL2
üüüüü
üüü
TQFP
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PIC
24FJ
256G
A110
1664
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1664
–100
10ü
üü
15ü
üüü
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üüüüü
üü
üü
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, QFN
(MR)
PIC
24FJ
256G
B110
1664
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1664
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10ü
üü
15ü
üüü
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üüüüüü
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üü
TQFP
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PIC
24FJ
128G
A204
1664
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828
–44
12ü
üü
15ü
üü
üü
üüüü
üüüü
üüüüüü
SPDI
P (S
P), S
OIC
(SO
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OP
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, Q
FN (M
M),
TQFP
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PIC
24FJ
128G
B204
1664
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828
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12ü
üü
15ü
üü
üü
üü
üüü
üüüü
üüüüüü
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P (S
P), S
OIC
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OP
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FN (M
M),
TQFP
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24FJ
128G
A310
1664
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864
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12üü
üü
15ü
üü
üü
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üüüüü
Up to
480
üüüüüü
TQFP
(PT)
, QFN
(MR)
PIC
24FJ
128G
C01
016
64–1
288
64–1
0016
10üü
üü
15ü
üü
üü
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üüüüüü
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üüüüü
TQFP
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PIC
24FJ
256D
A210
1612
8–25
624
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64–1
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üü
üü
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üüüüüü
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üüüü
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PIC
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256G
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1612
8–25
696
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1664
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6-bi
t PIC
® M
CU o
ffers
SAR
ADC
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elta-
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bit P
IC M
CU o
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gen
eral-
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Clas
s B
Safe
ty F
eatu
res:
L1
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ludes
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illato
r fail
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t, TR
AP, r
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M lo
ck*
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nclud
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atur
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f L1
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C L3
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ludes
feat
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1 +
Flash
ECC
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MT
*PW
M lo
ck a
vaila
ble
in de
vices
with
MC
PWM
/SM
PS P
WM
per
iphe
ral
www.microchip.com10
16-b
it M
icro
cont
rolle
rs a
nd d
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nal C
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Prod
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Maximum MIPS
Program Flash Memory (KB)
RAM (KB)
Pin Count
Perip
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cus
Pack
ages
Inte
llige
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Anal
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Con
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Tim
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fety
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mun
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Use
r In
terf
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Secu
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aSy
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Fle
xibi
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s B
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ty F
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r fail
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etec
t, TR
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eset
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atur
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MT
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vices
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PS P
WM
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iphe
ral
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enso
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ourc
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ontro
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odul
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inde
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ime
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WM
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otor
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lse-W
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put C
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put c
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ase
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utpu
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Out
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ster
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sin
gle
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ster
eo d
ata
SEN
T: S
ingl
e-Ed
ge N
ibbl
e Tr
ansm
issio
nSE
NT is
an
unid
irect
iona
l, sin
gle-
wire
ser
ial c
omm
unica
tions
pro
toco
l de
signe
d fo
r poi
nt-to
-poi
nt tr
ansm
issio
n of
sig
nal v
alues
Para
llel P
ort
Gen
eral-
purp
ose
para
llel c
omm
unica
tion
inte
rface
Use
r Int
erfa
ce:
Cap
aciti
ve T
ouch
Sen
sing
and
LC
D C
ontr
ol
LCD
: Li
quid
Cry
stal
Disp
layHi
ghly
inte
grat
ed s
egm
ente
d LC
D co
ntro
ller
GFX
: G
raph
ics C
ontro
ller
High
ly in
tegr
ated
gra
phics
con
trolle
r sup
porti
ng d
irect
inte
rface
with
disp
lay
glas
ses
with
bui
lt-in
ana
log
drive
for i
ndivi
dual
pixe
l con
trol
Secu
re D
ata:
Har
dwar
e-In
tegr
ated
Cry
ptog
raph
ic E
ngin
e
Cry
ptog
raph
ic E
ngin
eIn
depe
nden
t NIS
T-st
anda
rd e
ncry
ptio
n an
d de
cryp
tion
engi
neSe
cure
Key
Sto
rage
Mul
tiple
optio
n fo
r key
sto
rage
, sele
ctio
n an
d m
anag
emen
tRN
G:
Rand
om N
umbe
r Gen
erat
orHa
rdw
are
true
rand
om n
umbe
r gen
erat
ion
Syst
em F
lexi
bilit
y: S
yste
m P
erip
hera
ls a
nd In
terc
onne
cts
Dua
l Par
titio
n Fl
ash
Dual
parti
tion
Flas
h op
erat
ion,
allo
win
g th
e su
ppor
t of r
obus
t boo
tload
er
syst
ems
and
fail-
safe
sto
rage
of a
pplic
atio
n co
de, w
ith o
ptio
ns d
esig
ned
to
enha
nce
code
sec
urity
CLC
: Co
nfigu
rabl
e Lo
gic
Cell
Inte
grat
ed c
ombi
natio
nal a
nd s
eque
ntial
logi
c w
ith c
usto
m in
terc
onne
ctio
n an
d re
-rout
ing
of d
igita
l per
iphe
rals
PPS:
Per
iphe
ral P
in S
elect
I/O p
in re
map
ping
of d
igita
l per
iphe
rals
for g
reat
er d
esig
n fle
xibilit
y an
d im
prov
ed E
MI b
oard
layo
ut
PTG
: Pe
riphe
ral T
rigge
r Gen
erat
orUs
er-p
rogr
amm
able
sequ
ence
r, ca
pabl
e of
gen
erat
ing
com
plex
trig
ger s
igna
l se
quen
ces
to c
oord
inat
e th
e op
erat
ion
of o
ther
per
iphe
rals
DM
A: D
irect
Mem
ory
Acce
ssDi
rect
mem
ory
acce
ss fo
r tra
nsfe
r of d
ata
betw
een
the
CPU
and
its
perip
hera
ls w
ithou
t CPU
ass
istan
ceID
LE, S
LEEP
and
PM
DLo
w-p
ower
sav
ing
mod
es
DO
ZEAb
ility
to ru
n th
e CP
U co
re s
low
er th
an th
e sy
stem
clo
ck u
sed
by th
e in
tern
al pe
riphe
rals
XLP:
eXt
rem
e Lo
w P
ower
Tec
hnol
ogy
XLP
tech
nolo
gy d
evice
s w
ith e
xtre
me
low
-pow
er o
pera
tion
mod
es fo
r ba
ttery
/low
-pow
er a
pplic
atio
ns
Vbat
Hard
war
e-ba
sed
pow
er m
ode
that
main
tain
s on
ly th
e m
ost c
ritica
l ope
ratio
ns
whe
n a
pow
er lo
ss o
ccur
s on
Vdd
16-b
it M
CU
s an
d D
SCs
Term
inol
ogy
www.microchip.com12
Note
1: U
SART
s w
ith S
PI m
ode
are
take
n in
to a
ccou
nt N
ote
2: D
RAM
Mem
ory
Supp
ort:
PIC3
2MZ
DA w
ith D
DR2
(32
MB
embe
dded
or 1
28 M
B ex
tern
al); S
AM S
7x/E
7x/V
7x w
ith S
DRAM
(ext
erna
l) Not
e 3:
Aut
omot
ive G
rade
Dev
ices
Note
4: T
erm
inol
ogy
in fo
llow
ing
tabl
e
Note
5: S
AM C
20/C
21 a
re tr
ue 5
V de
vices
; SAM
C21
also
com
es w
ith 3
x 16
-bit
Delta
-Sig
ma
ADC
*: Va
riant
s w
ith U
SB fu
nctio
n +:
Var
iants
with
CAN
func
tion
32-b
it M
icro
cont
rolle
r Qui
ck R
efer
ence
Gui
de
Prod
uct
Fam
ily
Core
Max. Operation Freq. (MHz)
Program Flash Memory (KB)
RAM (KB)
Pin Count
Perip
hera
l Fun
ctio
n Fo
cus
Inte
llige
nt A
nalo
gW
avef
orm
C
ontr
olTi
min
g an
d M
easu
rem
ents
Safe
ty a
nd
Mon
itorin
gC
omm
unic
atio
nU
ser I
nter
face
Secu
rity
Syst
em
Flex
ibili
ty
Packages
ADC (channels/bits)
ADC Speed (sps)
DAC (channels/bits)
Analog Comparator (+Op Amp)
Output Compare Channels
Input Capture ChannelsPWM Channels
16-bit/32-bit Timer
TCC (24-bit Control Timer) (4)
Motor Interface (QEI/QDEC) (4)
Watchdog Timer DMT (Dead Man Timer) (4)
Class B Safety/DSU/Touch SafetyFunctional Safety Support (ASILB , SIL2) (4)
USB (FS/HS) + PHY (Transceiver)
CAN (2.0B or FD)Ethernet (10/100)SERCOM/FLEXCOM (4)USART/UART I²CSPI (1)
SDIO/SD/eMMCCMOS Camera InterfaceSQI/QSPIAudio CODEC (I2S) (4)
Peripheral Bus Interface PMP/EBI (bus width, bit) (4)
Touch PTC (channels)/Driven Shield + (4)
Segment/Graphics LCD Controller
LCD/GFX Interface (PMP/EBI)
Crypto Engine (AES. SHA, ECC, RSA/DSA, TRNG)
TrustZone (4)
Secure Boot (4)
TrustRAM (Bytes) (4)
DataFlash (KB) (4)
Tamper DetectionSecure Key ProvisioningKinibi-M SDK SupportDual Panel/Bank Flash (4)
Intelligent Low Power Peripheral Event System (channels) (4)
DMA (channels)CLC/CCL (4)
PIC
32
PIC
32M
M
GPL
micr
oApt
iv25
16-6
44-
820
-36
14/1
220
0k1/5
23
38
7/3
W2
22
üSS
OP,
SO
IC, S
PDIP,
QFN
, UQ
FN, V
QFN
PIC
32M
M
GPM
*m
icroA
ptiv
2564
-25
616
-32
28-
6424
/12
200k
1/53
99
2421
/9W
1F+P*
33
33
4ü
SSO
P, S
OIC
, SPD
IP, Q
FN,
UQFN
, VQ
FNPI
C32
MX
1/2*
/5*+
M4K
5016
-51
24-
6428
-10
048
/10
1M3
55
55/
2W
B1F+
P*1+
52
44
P16P
4SO
IC, S
SOP,
SPD
IP, Q
FN,
VTLA
, TQ
FP, T
FBG
A*PI
C32
MX
1/2
XLP
M4K
7212
8-25
632
-64
28-
4413
/10
1M3
55
55/
2W
+DB
1F+P
22
22
P12P
4SO
IC, Q
FN, T
QFP
PIC
32M
X 3/
4*M
4K12
032
-51
216
-12
864
-12
416
/10
1M2
55
55/
2W
B1F+
P*5
22
2P16
P4
TQFP
, QFN
, TFB
GA,
VTL
A
PIC
32M
X 5
M4K
8064
-51
216
-64
64-
100
16/1
01M
25
55
5/2
WB
1F+P
16
54
P16P
8Q
FN, T
QFP
, TFB
GA,
VTL
A
PIC
32M
X 6
M4K
8064
-51
232
-12
864
-10
016
/10
1M2
55
55/
2W
B1H+
P1
65
4P16
P8
QFN
, TQ
FP, T
FBG
A, V
TLA
PIC
32M
X 7
M4K
8012
8-51
232
-12
864
-10
016
/10
1M2
55
55/
2W
B1F+
P2
16
54
P16P
8Q
FN, T
QFP
, TFB
GA,
VTL
A
PIC
32M
K G
P/M
Cm
icroA
ptiv
120
512-
1024
128-
256
64-
100
42/1
216
M3/1
25O
412
1616
14/1
6E
W+D
B2F+
P4
66
6P24
Pü
13Q
FN, T
QFP
PIC
32M
Z EF
(3)
M-C
lass
252
512-
2048
128-
512
64-
144
48/1
218
M2
99
99/
4W
+DB
1H+P
21
65
6ü
6P/
E24P+
EA,
S,T
ü18
QFN
, TQ
FP, T
FBG
A, V
TLA,
LQ
FPPI
C32
MZ
DA
(2)
micr
oApt
iv20
010
24-
2048
256-
640
169-
288
45/1
218
M2
99
99/
4W
+DB
1H+P
21
65
61
ü6
P/E24
GP+
EA,
S,T
ü26
LFBG
A, L
QFP
SAM
SAM
D09
CM0+
488-
164
14-
2410
/12
350k
63
42/
1W
B2
22
26
6Q
FN, S
OIC
SAM
D10
CM0+
488-
164
14-
2410
/12
350k
1/10
26
312
2/1
1W
B+T
33
33
P726
6Q
FN, S
OIC
, WLC
SP
SAM
D11
CM0+
4816
414
-24
10/1
235
0k1/1
02
63
122/
11
WB+
T1F+
P3
33
3P72
66
QFN
, SO
IC, W
LCSP
SAM
D20
CM0+
4816
-25
62-
3232
-64
20/1
235
0k1/1
02
168
165/
2W
B+T
66
66
P256
8TQ
FP, Q
FN, W
LCSP
, UF
BGA
SAM
D21
CM0+
4832
-25
64-
3232
-64
20/1
235
0k1/1
02
188
245/
23
WB+
TA+
S1F+
P6
66
61
P256
1212
TQFP
, QFN
, WLC
SP,
UFBG
A
SAM
D21
LCM
0+48
32-6
44-
832
-48
18/1
235
0k1/1
04
1813
245/
23
WB+
T5
55
512
12TQ
FP, Q
FN
SAM
DA1
(3)
CM0+
4816
-64
4-8
32-
6420
/12
350k
1/10
218
824
5/2
3W
B+T
A1F+
P6
66
61
P256
128
TQFP
, QFN
SAM
L10
CM23
3216
-64
4-16
24-
3210
/12
1M1/1
02O
36
66
3/1
WB+
T3
33
3P10
0, D
+T
ü25
62ü
88ü
SSO
P, W
LCSP
, VQ
FN,
TQFP
SAM
L11
CM23
3216
-64
8-16
24-
3210
/12
1M1/1
02O
36
66
3/1
WB+
T3
33
3P10
0, D
+A,
S,T
üüü
256
2üü
88ü
SSO
P, W
LCSP
, VQ
FN,
TQFP
SAM
L11
-KP
HCM
2332
32-6
48-
1624
-32
10/1
21M
1/10
2O3
66
63/
1W
B+T
33
33
P100,
D+
A,S,
Tüüü
256
2üüü
88ü
VQFN
, TQ
FP
Focus Product Selector Guide 13
32-b
it M
icro
cont
rolle
r Qui
ck R
efer
ence
Gui
de
Prod
uct
Fam
ily
Core
Max. Operation Freq. (MHz)
Program Flash Memory (KB)
RAM (KB)
Pin Count
Perip
hera
l Fun
ctio
n Fo
cus
Inte
llige
nt A
nalo
gW
avef
orm
C
ontr
olTi
min
g an
d M
easu
rem
ents
Safe
ty a
nd
Mon
itorin
gC
omm
unic
atio
nU
ser I
nter
face
Secu
rity
Syst
em
Flex
ibili
ty
Packages
ADC (channels/bits)
ADC Speed (sps)
DAC (channels/bits)
Analog Comparator (+Op Amp)
Output Compare Channels
Input Capture ChannelsPWM Channels
16-bit/32-bit Timer
TCC (24-bit Control Timer) (4)
Motor Interface (QEI/QDEC) (4)
Watchdog Timer DMT (Dead Man Timer) (4)
Class B Safety/DSU/Touch SafetyFunctional Safety Support (ASILB , SIL2) (4)
USB (FS/HS) + PHY (Transceiver)
CAN (2.0B or FD)Ethernet (10/100)SERCOM/FLEXCOM (4)USART/UART I²CSPI (1)
SDIO/SD/eMMCCMOS Camera InterfaceSQI/QSPIAudio CODEC (I2S) (4)
Peripheral Bus Interface PMP/EBI (bus width, bit) (4)
Touch PTC (channels)/Driven Shield + (4)
Segment/Graphics LCD Controller
LCD/GFX Interface (PMP/EBI)
Crypto Engine (AES. SHA, ECC, RSA/DSA, TRNG)
TrustZone (4)
Secure Boot (4)
TrustRAM (Bytes) (4)
DataFlash (KB) (4)
Tamper DetectionSecure Key ProvisioningKinibi-M SDK SupportDual Panel/Bank Flash (4)
Intelligent Low Power Peripheral Event System (channels) (4)
DMA (channels)CLC/CCL (4)
SAM
SAM
L21
CM0+
4832
-25
64-
3232
-64
20/1
21M
2/12
2O3
248
245/
22
WB+
TS
1F+P
66
66
P169
A,T
1216ü
TQFP
, QFN
, WLC
SP
SAM
L22
CM0+
3264
-25
68-
3248
-10
020
/12
1M2
128
124/
21
WB+
T1F+
P6
66
6P25
6S32
0A,
Tü
816ü
TQFP
, QFN
, WLC
SP,
UFBG
A
SAM
C20
CM0+
4832
-25
64/
3232
-64
12/1
21M
214
618
5/2
2W
B+T
A4
44
4P25
66
6ü
TQFP
, QFN
, WLC
SP
SAM
C21
(5)
CM0+
4832
-25
64-
3232
-10
020
/12
1M1/1
04
188
245/
22
WB+
TA
2FD8
88
8P25
612
12ü
TQFP
, QFN
, WLC
SP
SAM
4NCM
410
051
2-10
2464
-80
48-
100
16/1
051
0k1/1
018
124
2/-
DW
3/4
34
23LQ
FP, T
FBG
A, V
FBG
A,
QFN
SAM
4SCM
412
012
8-20
4864
-16
048
-10
016
/12
1M2/1
21
1812
42/
-D
W1F+
P2/
22
31ü
1E24
Eü
1422
LQFP
, TFB
GA,
VFB
GA,
Q
FN, W
LCSP
SAM
4ECM
4F12
051
2-10
2412
810
0-14
424
/12
300k
2/12
124
184
-/3D
W1F+
P2
12/
22
31ü
E24E
Aü
33LF
BGA,
TFB
GA,
LQ
FP
SAM
4LCM
448
128-
512
32-
6448
-10
016
/12
300k
1/10
418
125
2/-
W1F+
P4/
14
5ü
1P32
S160
A,T
416
LQFP
, WLC
SP
SAM
GCM
4F12
025
6-51
264
-17
649
-10
08/1
250
0k6
66
2/-
W1F+
P8
88
82
ü6
30LQ
FP, Q
FN, W
LCSP
SAM
D5x
CM4F
120
256-
1024
128-
256
64-
128
32/1
21M
2/12
225
1624
8/4
2D
WB+
T1F+
P8
88
82üü
1P25
6A,
S,E,
R,T
üü
3232ü
TQFP
, QFN
, W
LCSP
SAM
E5x
CM4F
120
256-
1024
128-
256
64-
128
32/1
21M
2/12
225
1624
8/4
2D
WB+
T1F+
P2FD
18
88
82üü
1P25
6A,
S,E,
R,T
üü
3232ü
TQFP
, QFN
SAM
S7x
(2)
CM7
300
512-
2048
256-
384
64-
144
24/1
21.
7M2/1
21
4424
84/
-D
W1H+
P3/
53
51üü
2E24
EA,
S,T
ü12
24LQ
FP, L
FBG
A, T
FBG
A,
UFBG
A, V
FBG
A, Q
FN
SAM
E7x
(2)
CM7
300
512-
2048
256-
384
64-
144
24/1
21.
7M2/1
21
4424
84/
-D
W1H+
P2FD
13/
53
51üü
2E24
EA,
S,T
ü12
24LQ
FP, L
FBG
A, T
FBG
A,
UFBG
A
SAM
V7x
(2) (
3)CM
730
051
2-20
4825
6-38
464
-14
424
/12
1.7M
2/12
144
248
4/-
DW
1H+P
2FD1
3/5
35
1üü
2E24
EA,
S,T
ü12
24LQ
FP, T
FBG
A, L
FBG
A
Note
1: U
SART
s w
ith S
PI m
ode
are
take
n in
to a
ccou
nt N
ote
2: D
RAM
Mem
ory
Supp
ort:
PIC3
2MZ
DA w
ith D
DR2
(32
MB
embe
dded
or 1
28 M
B ex
tern
al); S
AM S
7x/E
7x/V
7x w
ith S
DRAM
(ext
erna
l) Not
e 3:
Aut
omot
ive G
rade
Dev
ices
Note
4: T
erm
inol
ogy
in fo
llow
ing
tabl
e
Note
5: S
AM C
20/C
21 a
re tr
ue 5
V de
vices
; SAM
C21
also
com
es w
ith 3
x 16
-bit
Delta
-Sig
ma
ADC
*: Va
riant
s w
ith U
SB fu
nctio
n +:
Var
iants
with
CAN
func
tion
www.microchip.com14
Tim
ing
and
Mea
sure
men
ts: S
igna
l Mea
sure
men
t With
Tim
ing
and
Cou
nter
Con
trol
TCC
: Tim
er/C
ount
ers
for C
ontro
lSe
lecte
d SA
M p
rodu
cts
have
TCC
s fo
r app
licat
ions
like
Switc
h M
ode
Pow
er S
uppl
ies
(SM
PS),
light
ing
and
mot
or c
ontro
l. Th
e TC
Cs s
uppo
rt up
to 9
6 M
Hz a
nd 2
4-bi
t res
olut
ion.
QEI
: Qua
drat
ure
Enco
der
Inte
rface
Q
DEC
: Qua
drat
ure
Dec
oder
QEI
to in
crem
ent e
ncod
ers
for o
btain
ing
mec
hani
cal p
ositio
n da
ta ty
pica
l for
aut
omat
ion
or
mot
or c
ontro
l app
lictio
ns. Q
DEC
per
form
s th
e in
put l
ines
filte
ring,
dec
odin
g of
qua
drat
ure
signa
ls an
d co
nnec
ts to
the
timer
s/co
unte
rs in
ord
er to
read
the
posit
ion
and
spee
d of
the
mot
or th
roug
h th
e us
er in
terfa
ce.
Com
mun
icat
ions
: Gen
eral
, Ind
ustri
al, L
ight
ing
and
Auto
mot
ive
SERC
OM
: Ser
ial C
omm
unic
atio
n M
odul
e
The
SERC
OM
is s
oftw
are
that
is c
onfig
urab
le to
ope
rate
as
I²C, S
PI o
r USA
RT, g
iving
yo
u ex
tend
ed fl
exib
ility
to m
ix se
rial in
terfa
ces
and
grea
ter f
reed
om in
PCB
layo
ut. E
ach
SERC
OM
inst
ance
can
be
assig
ned
to d
iffere
nt I/
O p
ins
thro
ugh
I/O m
ultip
lexin
g, fu
rther
in
crea
sing
vers
atilit
y.
I2S:
Inte
r-IC
Sou
nd C
ontro
ller
The
Inte
r-IC
Soun
d Co
ntro
ller p
rovid
es a
bid
irect
iona
l, sy
nchr
onou
s di
gita
l aud
io lin
k w
ith
exte
rnal
audi
o de
vices
.
PMP:
Par
alle
l Mas
ter P
ort
EBI:
Exte
rnal
Bus
Inte
rface
PMP/
EBI p
rovid
e a
high
-spe
ed a
nd c
onve
nien
t int
erfa
ce to
ext
erna
l par
allel
mem
ory
devic
es, g
raph
ic LC
Ds a
nd c
amer
a se
nsor
s.
Safe
ty a
nd M
onito
ring:
Har
dwar
e M
onito
ring
and
Faul
t Det
ectio
n
DM
T: D
ead
Man
Tim
erTh
e pr
imar
y fu
nctio
n of
the
DMT
is to
rese
t the
pro
cess
or in
the
even
t of a
sof
twar
e m
alfun
ctio
n. A
DM
T is
typi
cally
use
d in
miss
ion-
critic
al an
d sa
fety
critic
al ap
plica
tions
, whe
re
any
singl
e fa
ilure
of a
sof
twar
e fu
nctio
nality
and
seq
uenc
ing
mus
t be
dete
cted
.
Func
tiona
l Saf
ety
Supp
ort
Selec
t 32-
bit M
CUs
supp
ort s
afet
y cr
itical
appl
icatio
ns e
nabl
ing
hous
ehol
d ap
plian
ces
with
Cl
ass
B ba
sed
on IE
C607
30 ,
indu
stria
l app
licat
ions
with
SIL
2 b
ased
on
the
IEC6
1508
and
au
tom
otive
with
ASI
L B
base
d on
the
ISO
2626
2 st
anda
rds.
Use
r Int
erfa
ce: C
apac
itive
Tou
ch S
ensi
ng a
nd L
CD
Con
trol
PTC
: Per
iphe
ral T
ouch
Con
trolle
r
An e
mbe
dded
per
iphe
ral t
ouch
con
trolle
r mak
es it
eas
y to
add
cap
acitiv
e to
uch
sens
ing
to y
our p
rojec
t with
but
tons
, slid
ers,
whe
els a
nd p
roxim
ity. B
y off
erin
g su
perb
sen
sitivi
ty
and
noise
toler
ance
as
well
as
self-
calib
ratio
n, th
e PT
C eli
min
ates
the
need
for e
xter
nal
com
pone
nts
and
min
imize
s CP
U ov
erhe
ad. T
he P
TC s
uppo
rts u
p to
256
cha
nnels
on
64-
pin
devic
es, 1
20 c
hann
els o
n 64
-pin
dev
ices
and
60 c
hann
els o
n 32
-pin
dev
ices.
PTC
with
Dr
iven
Shiel
d +
can
achi
eve
bette
r noi
se im
mun
ity a
nd m
oist
ure
toler
ance
.
Syst
em F
lexi
bilit
y: S
yste
m P
erip
hera
ls a
nd In
terc
onne
cts
CLC
/CC
L: C
onfig
urab
le C
usto
m
Logi
c
The
CCL
is a
prog
ram
mab
le lo
gic
perip
hera
l whi
ch c
an b
e co
nnec
ted
to th
e de
vice
pins
, eve
nts
or to
oth
er in
tern
al pe
riphe
rals.
Thi
s all
ows
you
to e
limin
ate
logi
c ga
tes
for s
impl
e gl
ue lo
gic
func
tion
on th
e PC
B.
EVSY
S: E
vent
Sys
tem
The
Even
t Sys
tem
allo
ws
auto
nom
ous,
low
-late
ncy
and
confi
gura
ble
com
mun
icatio
n be
twee
n pe
riphe
rals.
Sev
eral
perip
hera
ls ca
n be
con
figur
ed to
gen
erat
e an
d/or
resp
ond
to s
igna
ls kn
own
as e
vent
s. C
omm
unica
tion
is m
ade
with
out C
PU
inte
rven
tion
and
with
out c
onsu
min
g sy
stem
reso
urce
s su
ch a
s Bu
s or
RAM
ba
ndw
idth
. Thi
s re
duce
s th
e lo
ad o
n th
e CP
U an
d ot
her s
yste
m re
sour
ces,
co
mpa
red
to a
trad
itiona
l inte
rrupt
-bas
ed s
yste
m.
Dua
l Pan
el/B
ank
Flas
hDu
al Ba
nk F
lash
allow
s liv
e fie
ld fi
rmw
are/
prog
ram
upd
ate
on o
ne b
ank
whi
le CP
U ca
n co
ntin
ue e
xecu
ting
code
from
ano
ther
Flas
h ba
nk.
Secu
rity:
Chi
p-Le
vel S
ecur
ity, C
rypt
o Ac
cele
ratio
n, S
ecur
e Ke
y Pr
ovis
ioni
ng a
nd S
tora
ge a
nd T
ampe
r Det
ectio
n
Trus
tZon
eTr
ustZ
one®
for A
RMv8
-M p
rovid
es h
ardw
are-
enfo
rced
sec
urity
isol
atio
n be
twee
n tru
sted
and
the
untru
sted
reso
urce
s on
a C
orte
x™-M
23 b
ased
dev
ice, w
hile
main
tain
ing
the
efficie
nt e
xcep
tion
hand
ling.
Trus
tRAM
Trus
tRAM
pro
vides
sec
ure
key
stor
age
again
st s
oftw
are
atta
cks
and
can
resis
t m
icrop
robi
ng. I
t also
pre
vent
s da
ta re
man
ence
and
facil
itate
s ra
pid
eras
e on
tam
per
even
t.
Dat
aFla
shDa
taFl
ash
prov
ides
sec
ure
key
stor
age
again
st s
oftw
are
atta
cks.
It a
lso a
llow
s da
ta
scra
mbl
ing
and
facil
itate
s ra
pid
eras
e on
tam
per e
vent
.
Secu
re B
oot
Secu
re B
oot a
uthe
ntica
tes
the
Flas
h co
nten
t at s
tartu
p an
d en
sure
s th
e de
sired
cod
e is
exec
uted
.
Kini
bi-M
A m
odul
ar s
ecur
e ap
plica
tion
deve
lopm
ent f
ram
ewor
k th
at m
akes
impl
emen
tatio
n of
se
curit
y sim
ple.
32-b
it M
CU
s Te
rmin
olog
y
Dev
elop
men
t Too
lsPI
C32
and
SAM
Pro
duct
sTo
olD
escr
iptio
n
MPL
AB® X
IDE
MPL
AB® X
is th
e Int
egra
ted
Deve
lopm
ent E
nviro
nmen
t (ID
E) fo
r dev
elopin
g an
d de
bugg
ing P
IC32
an
d SA
M M
CU a
nd M
PU a
pplic
ation
s, in
addit
ion to
Micr
ochip
s 8- a
nd 1
6-bit
Micr
ocon
trolle
rs. It
is
base
d on
the
open
-sou
rce
NetB
eans
IDE
from
Ora
cle a
nd ru
ns u
nder
Wind
ows®
, Mac
OS®
and
Lin
ux®, a
nd c
onne
cts s
eam
lessly
to a
rang
e of
deb
ugge
rs, p
rogr
amm
ers a
nd d
evelo
pmen
t kits
.
MPL
AB H
arm
ony
Con
figur
ator
The
MPL
AB H
arm
ony
Confi
gura
tor (
MHC
) is a
tim
e-sa
ving
hard
war
e co
nfigu
ratio
n ut
ility
for
MPL
AB H
arm
ony,
Micr
ochi
p's
awar
d w
inni
ng s
oftw
are
fram
ewor
k. D
evelo
pers
use
MHC
to
get v
isual
unde
rsta
ndin
g an
d co
ntro
l of t
he c
onfig
urat
ion
of th
eir ta
rget
dev
ice a
nd a
pplic
atio
n.
MHC
is a
fully
inte
grat
ed to
ol w
ithin
MPL
AB X
IDE.
MPL
AB H
arm
ony
Softw
are
Fram
ewor
k
MPL
AB H
arm
ony i
s a fle
xible,
abs
tract
ed, f
ully i
nteg
rate
d firm
ware
dev
elopm
ent p
latfo
rm fo
r PIC
32
and
SAM
micr
ocon
trolle
rs a
nd M
PUs.
It tak
es k
ey e
lemen
ts o
f mod
ular a
nd o
bject
orie
nted
des
ign,
adds
in th
e fle
xibilit
y to
use
a Re
al-Tim
e Op
erat
ing S
yste
m (R
TOS)
or w
ork
with
out o
ne. M
PLAB
Ha
rmon
y pro
vides
a fr
amew
ork
of so
ftwar
e m
odule
s tha
t are
eas
y to
use,
con
figur
able
for y
our
spec
ific n
eeds
, and
in a
form
at th
at a
llows
for m
axim
um re
-use
and
redu
ces t
ime
to m
arke
t.
MPL
AB H
arm
ony
Gra
phic
s Su
ite
MPL
AB H
arm
ony
Gra
phics
Sui
te is
Micr
ochi
p's
indu
stry
-lead
ing
grap
hics
tool
set f
or P
IC32
an
d SA
M M
icroc
ontro
llers
and
MPU
s. P
rovid
ing
a fu
lly-in
tegr
ated
eas
y to
use
WYS
IWYG
ed
itor,
grap
hics
ass
et m
anag
emen
t and
cod
e ge
nera
tor w
ithin
the
MPL
AB H
arm
ony
fram
ewor
k, th
e su
ite a
llow
s yo
u to
go
from
con
cept
to g
lass
in m
inut
es w
ithou
t writ
ing
a sin
gle
line
of c
ode.
Add
itiona
lly th
e in
tegr
ated
Disp
lay M
anag
er p
lug-
in e
nabl
es q
uick
sup
port
for n
ew a
nd u
nsup
porte
d di
splay
s in
MPL
AB H
arm
ony.
Touc
h In
terfa
ceM
PLAB
Har
mon
y su
ppor
ts b
oth
capa
citive
and
resis
tive
touc
h. W
ith a
utom
atic
gene
ratio
n an
d co
nfigu
ratio
n of
eve
nt h
andl
ers
for t
ouch
eve
nts,
it a
llow
s qu
ick d
evelo
pmen
t of t
ouch
en
abled
gra
phics
sol
utio
ns.
Dat
a Vi
sual
izer
Trac
k an
d pr
ofile
your
app
licat
ions
run-
time
beha
vior u
sing
the
pow
erfu
l Dat
a Vi
suali
zer.
It pr
ovid
es a
n os
cillo
scop
e vie
w o
f sig
nals
such
as
GPI
O, S
PI, U
ART,
etc.
The
Dat
a Vi
suali
zer
also
prov
ides
live
pow
er m
easu
rem
ents
whe
n us
ed to
geth
er w
ith a
sup
porte
d pr
obe
or b
oard
, su
ch a
s th
e po
wer
deb
ugge
r. Pr
ofilin
g yo
ur a
pplic
atio
ns p
ower
usa
ge h
as n
ever
bee
n ea
sier.
SAM
Pro
duct
sTo
olD
escr
iptio
n
Atm
el S
tudi
o 7
Atm
el St
udio
7 is
the
Inte
grat
ed D
evelo
pmen
t Plat
form
(IDP
) for
dev
elopi
ng a
nd d
ebug
ging
AVR
®
and
Arm
®-b
ased
SAM
MCU
app
licat
ions
. Atm
el St
udio
7 p
rovid
es y
ou w
ith a
sea
mles
s ea
sy-
to-u
se e
nviro
nmen
t to
deve
lop
and
debu
g ap
plica
tions
writ
ten
in C/
C++
or a
ssem
bly
code
. It
conn
ects
sea
mles
sly to
a ra
nge
of d
ebug
gers
, pro
gram
mer
s an
d de
velo
pmen
t kits
.
Atm
el S
TART
Atm
el ST
ART
is an
inno
vativ
e on
line
tool
for i
ntui
tive,
gra
phica
l con
figur
atio
n an
d de
ploy
men
t of
em
bedd
ed s
oftw
are.
It le
ts y
ou s
elect
and
con
figur
e so
ftwar
e co
mpo
nent
s, d
river
s an
d m
iddl
ewar
e, a
s w
ell a
s de
ploy
com
plet
e ex
ampl
e pr
ojec
ts ta
ilore
d to
the
need
s of
you
r ap
plica
tion.
Atm
el ST
ART
is co
mpl
etely
plat
form
inde
pend
ent,
and
able
to g
ener
ate
proj
ect fi
les
for a
num
ber o
f IDE
s. T
he c
onfig
urat
ion
engi
ne le
ts y
ou re
view
dep
ende
ncies
bet
wee
n so
ftwar
e co
mpo
nent
s an
d av
ailab
le ha
rdw
are
reso
urce
s in
the
selec
ted
MCU
, and
aut
omat
ically
sug
gest
s so
lutio
ns to
any
con
flicts
that
in y
our c
hose
n se
tup.
ASF
Softw
are
Fram
ewor
k fo
r SA
M
ASF
prov
ides
sof
twar
e dr
ivers
and
libra
ries
to b
uild
app
licat
ions
for A
VR a
nd S
AM d
evice
s. It
is
arch
itect
ed fo
r rea
dabi
lity a
nd p
erfo
rman
ce, a
nd c
onta
ins
a nu
mbe
r of a
dvan
ced
mid
dlew
are
com
pone
nts
for 3
2-bi
t SAM
dev
ices
such
as
USB
devic
e, T
CP/IP
, Wi-F
i, RT
OS
kern
el (F
reeR
TOS)
, Blu
etoo
th, fi
le sy
stem
and
mor
e.
Dat
a Vi
sual
izer
Trac
k an
d pr
ofile
your
app
licat
ions
run-
time
beha
vior u
sing
the
pow
erfu
l Dat
a Vi
suali
zer.
It pr
ovid
es a
n os
cillo
scop
e vie
w o
f sig
nals
such
as
GPI
O, S
PI, U
ART,
etc
. The
Dat
a Vi
suali
zer a
lso
prov
ides
live
pow
er m
easu
rem
ents
whe
n us
ed to
geth
er w
ith a
sup
porte
d pr
obe
or b
oard
, suc
h as
the
pow
er d
ebug
ger.
Profi
ling
your
app
licat
ions
pow
er u
sage
has
nev
er b
een
easie
r.
QTo
uch®
C
ompo
ser
The
QTo
uch
Com
pose
r allo
ws
you
to s
eam
lessly
dev
elop
capa
citive
touc
h fu
nctio
nality
for y
our
appl
icatio
n. T
his
simpl
ifies
the
desig
n pr
oces
s by
tyin
g to
geth
er th
e to
ols
requ
ired
to e
dit t
he
code
in S
tudi
o 7
and
tune
the
touc
h de
sign
in Q
Touc
h Co
mpo
ser.
Focus Product Selector Guide 15
32-b
it M
icro
proc
esso
rs
Prod
uct
Cor
e Su
b-Sy
stem
Mem
ory
Con
nect
ivity
Use
r Int
erfa
ceSe
curit
yC
ontr
ol
Extended Temperature Range (–40 to 105°C Ambient)
Packages
Core
VFPU/NEON/Trustzone
Clock Speed (MHz)*
Core Operating Voltage
SRAM (KB)
L1 Cache Memory (KB) (Instruction/Data)
L2 Cache (KB)
LPSDR/SDRAM
QSPI Interface
DDR2/LPDDR/LPDDR2
DDR3/DDR3L/LPDDR3
DDR Bus Width 16/32
NAN
D
UARTSPITWI (I²C)SSC (and I2S)CAN
USB
Ethe
rnet
SD/eMMC
Class D/PDM/Audio PLL
Max I/O Pins
Graphic LCD
LCD Overlay
Resistive (R) and/or PCAP (P) Touchscreen
Hardware Video Decoder
Camera Interface
Security Level
Secure Boot
Anti-Tamper Pins
Environmental Monitors
32-bit Timers
PWM Channels
10-bit ADC Channels
12-bit ADC Channels
SLC ECC (bit)
MLC ECC (bit)
Device Only
Device and Host
Host Only
10/100 Ethernet MAC10/100/1000 MACIEEE 1588 Support
ATSA
MA5
ATSA
MA5
D21
Co
rtex®
-A5
1/1/
150
01.
2V12
82
× 32
128
–2
1/1/
11/
1/1
1632
329
66
4–
–1
HS1
HS1
–Y
11/
1/1
721
YR
–1
Adv.
Y6
–5
4–
12–
BGA
196,
11
× 11
, 0.
75 m
m p
itch
ATSA
MA5
D22
Co
rtex-
A51/
1/1
500
1.2V
128
2 ×
3212
8–
21/
1/1
1/1/
116
3232
96
64
1–
1 HS
1 HS
1–
Y1
1/1/
172
1Y
R, P
–1
Adv.
Y6
–5
4–
12Y
BGA
196,
11
× 11
, 0.
75 m
m p
itch
ATSA
MA5
D23
Co
rtex-
A51/
1/1
500
1.2V
128
2 ×
3212
8–
21/
1/1
1/1/
116
3232
96
64
1–
1 HS
1 HS
1–
Y1
1/1/
172
1Y
R, P
–1
PCI P
re-
certi
fied
Y6
Y5
4–
12Y
BGA
196,
11
× 11
, 0.
75 m
m p
itch
ATSA
MA5
D24
Co
rtex-
A51/
1/1
500
1.2V
128
2 ×
3212
8–
21/
1/1
1/1/
132
3232
107
74
––
1 HS
1 HS
, 1
HSIC
1–
Y2
1/1/
110
51
YR,
P–
1M
ed.
Y2
–6
4–
12–
BGA
256,
8 ×
8,
0.4
mm
pitc
hAT
SAM
A5D
26
Corte
x-A5
1/1/
150
01.
2V12
82
× 32
128
–2
1/1/
11/
1/1
3232
3210
77
4–
–1
HS1
HS1
–Y
21/
1/1
128
1Y
R–
1Ad
v.Y
8–
64
–12
YBG
A 28
9, 1
4 ×
14,
0.8
mm
pitc
hAT
SAM
A5D
27
Corte
x-A5
1/1/
150
01.
2V12
82
× 32
128
–2
1/1/
11/
1/1
3232
3210
77
42
–1
HS1
HS,
1 HS
IC1
–Y
21/
1/1
128
1Y
R, P
–1
Adv.
Y8
–6
4–
12Y
BGA
289,
14
× 14
, 0.
8 m
m p
itch
ATSA
MA5
D28
Co
rtex-
A51/
1/1
500
1.2V
128
2 ×
3212
8–
21/
1/1
1/1/
132
3232
107
74
2–
1 HS
1 HS
, 1
HSIC
1–
Y2
1/1/
112
81
YR,
P–
1PC
I Pre
-ce
rtifie
dY
8Y
64
–12
YBG
A 28
9, 1
4 ×
14,
0.8
mm
pitc
h
ATSA
MA5
D31
Corte
x-A5
1/
–/–
536
1.2V
128
2 ×
32–
––
1/1/
1–
3224
247
63
2–
–1
HS2
HS1
–Y
3–
160
1Y
R–
1M
ed.
Y–
–5
4–
12–
BGA
324,
15
× 15
, 0.
8 m
m p
itch,
BG
A 32
4, 1
2 ×
12,
0.5
mm
pitc
hAT
SAM
A5D
33Co
rtex-
A5
1/–/
–53
61.
2V12
82
× 32
––
–1/
1/1
–32
2424
56
32
––
1 HS
2 HS
–1
Y2
–16
01
YR
–1
Med
.Y
––
54
–12
–BG
A 32
4, 1
5 ×
15,
0.8
mm
pitc
hAT
SAM
A5D
34Co
rtex-
A5
1/–/
–53
61.
2V12
82
× 32
––
–1/
1/1
–32
2424
56
32
2–
1 HS
2 HS
–1
Y3
–16
01
YR
–1
Med
.Y
––
54
–12
–BG
A 32
4, 1
5 ×
15,
0.8
mm
pitc
hAT
SAM
A5D
35Co
rtex-
A5
1/–/
–53
61.
2V12
82
× 32
––
–1/
1/1
–32
2424
76
32
2–
1 HS
2 HS
11
Y3
–16
0–
–R
–1
Med
.Y
––
64
–12
YBG
A 32
4, 1
5 ×
15,
0.8
mm
pitc
hAT
SAM
A5D
36Co
rtex-
A5
1/1/
153
61.
2V12
82
× 32
––
–1/
1/1
–32
2424
76
32
2–
1 HS
2 HS
11
Y3
–16
01
YR
–1
Med
.Y
––
64
–12
YBG
A 32
4, 1
5 ×
15,
0.8
mm
pitc
hAT
SAM
A5D
41Co
rtex-
A5
1/1/
160
01.
8V12
82
× 32
128
––
1/1/
1–
3224
248
84
2–
–1
HS2
HS2
–Y
2–
152
1Y
R–
1Ad
v.Y
8–
94
5–
–BG
A 28
9, 1
4 ×
14,
0.8
mm
pitc
h AT
SAM
A5D
42Co
rtex-
A5
1/1/
160
01.
8V12
82
× 32
128
––
1/1/
1–
3224
248
84
2–
–1
HS2
HS2
–Y
2–
152
1Y
R–
1Ad
v.Y
8–
94
5–
–BG
A 36
1, 1
6 ×
16,
0.8
mm
pitc
h AT
SAM
A5D
43Co
rtex-
A5
1/1/
160
01.
8V12
82
× 32
128
––
1/1/
1–
3224
248
84
2–
–1
HS2
HS2
–Y
2–
152
1Y
R30
fps,
72
0p1
Adv.
Y8
–9
45
––
BGA
289,
14
× 14
, 0.
8 m
m p
itch
ATSA
MA5
D44
Corte
x-A5
1/
1/1
600
1.8V
128
2 ×
3212
8–
–1/
1/1
–32
2424
88
42
––
1 HS
2 HS
2–
Y2
–15
21
YR
30 fp
s,
720p
1Ad
v.Y
8–
94
5–
–BG
A 36
1, 1
6 ×
16,
0.8
mm
pitc
hAT
SAM
A5D
27
C-D
1GCo
rtex-
A51/
1/1
500
1.1V
– 1.
32V
128
32/3
212
8–
212
8–
232
3210
77
2/2
2–
1 HS
1 HS
, 1
HSIC
1–
Y2
1/1/
112
81
YY
–1
Adv.
Y8
–6
4–
12–
BGA
289,
14
× 14
, 0.
8 m
m p
itch
ATSA
MA5
D27
C
-D5M
Corte
x-A5
1/1/
150
01.
1V–
1.32
V12
832
/32
128
–2
64–
232
3210
77
2/2
2–
1 HS
1 HS
, 1
HSIC
1–
Y2
1/1/
112
81
YY
–1
Adv.
Y8
–6
4–
12–
BGA
289,
14
× 14
, 0.
8 m
m p
itch
ATSA
MA5
D28
C
-D1G
Corte
x-A5
1/1/
150
01.
1V–
1.32
V12
832
/32
128
–2
128
–2
3232
107
72/
22
–1
HS1
HS,
1 HS
IC1
–Y
21/
1/1
128
1Y
Y–
1PC
I Pre
-ce
rtifie
dY
8–
64
–12
–BG
A 28
9, 1
4 ×
14,
0.8
mm
pitc
hAT
SAM
A5D
225
C-D
1MCo
rtex-
A51/
1/1
500
1.1V
– 1.
32V
128
32/3
212
8–
216
–2
3232
97
72/
21
–1
HS1
HS1
–Y
21/
1/1
901
YY
–1
Adv.
Y6
–5
4–
12–
BGA
196,
11
× 11
, 0.
75 m
m p
itch
ATSA
MA5
D
27-S
OM
1Co
rtex-
A51/
1/1
500
3.3V
128
32/3
212
8–
112
8–
–8
65
1/1
2–
1 HS
1 HS
, 1
HSIC
1–
Y2
1/1/
110
31
YY
–1
Adv.
Y7
–5
4–
4–
Mod
ule 1
76, 4
0 ×
38, 0
.8 m
m p
itch
SAM
A5D
27C
-LD
1GCo
rtex-
A51/
1/1
500
1.2V
–12
812
82
× 3212
82
1/1/
11/
1/1
3232
107
74
2–
1 HS
1 HS
, 1
HSIC
1–
Y2
1Y
R, C
–1
1/1/
1Ad
v.Y
8–
64
–12
–BG
A 36
1, 1
6 ×
16,
0.8
mm
pitc
h
SAM
A5D
27C
-LD
2GCo
rtex-
A51/
1/1
500
1.2V
–25
612
82
× 3212
82
1/1/
11/
1/1
3232
107
74
2–
1 HS
1 HS
, 1
HSIC
1–
Y2
1Y
R, C
–1
1/1/
1Ad
v.Y
8–
64
–12
–BG
A 36
1, 1
6 ×
16,
0.8
mm
pitc
h
SAM
A5D
28C
-LD
1GCo
rtex-
A51/
1/1
500
1.2V
–12
812
82
× 3212
82
1/1/
11/
1/1
3232
107
74
2–
1 HS
1 HS
, 1
HSIC
1–
Y2
1Y
R, C
–1
1/1/
1PC
I Pre
-ce
rtifie
dY
8Y
64
–12
–BG
A 36
1, 1
6 ×
16,
0.8
mm
pitc
h
SAM
A5D
28C
-LD
2GCo
rtex-
A51/
1/1
500
1.2V
–25
612
82
× 3212
82
1/1/
11/
1/1
3232
107
74
2–
1 HS
1 HS
, 1
HSIC
1–
Y2
1Y
R, C
–1
1/1/
1PC
I Pre
-ce
rtifie
dY
8Y
64
–12
–BG
A 36
1, 1
6 ×
16,
0.8
mm
pitc
h
* Clo
ck s
peed
: Max
. clo
ck s
peed
@ +
85°C
. Not
es: 1
. Tem
pera
ture
Ran
ge: −
40°C
to +
85°C
(am
bien
t) 2.
UAR
T: S
uppo
rt fo
r RS4
85, I
SO78
16, I
rDA®
, LIN
, mod
em c
ontro
l line
s an
d SP
I on
selec
ted
UART
s. 3
. TW
I: Tw
o-W
ire In
terfa
ce; i
nter
conn
ects
com
pone
nts
on a
two-
wire
bu
s. 4
. SSC
: Ser
ial S
ynch
rono
us C
ontro
ller,
supp
orts
man
y se
rial s
ynch
rono
us c
omm
unica
tions
pro
toco
ls us
ed in
aud
io a
nd te
lecom
app
licat
ions
suc
h as
I2 S, s
hort
or lo
ng fr
ame
sync
. 5. 1
6-bi
t and
32-
bit T
imer
s: C
aptu
re/c
ompa
re, w
avef
orm
gen
erat
ion
and
PWM
mod
es. 6
. EC
C: E
rror C
orre
ctio
n Co
de c
ontro
ller.
7. S
ecur
ity le
vel:
Adv.
= ha
rdw
are
encr
yptio
n en
gine
+ o
n th
e fly
DDR
enc
rypt
ion/
decr
yptio
n +
secu
re s
tora
ge +
tam
per p
ins;
Med
. = h
ardw
are
encr
yptio
n en
gine
onl
y. 8.
Y =
Yes
9. C
amer
a In
terfa
ce: F
or C
MO
S-ty
pe im
age
sens
or, I
TU-R
BT
, 601
/656
ext
erna
l inte
rface
, pro
gram
mab
le fra
me
capt
ure
rate
, up
to 1
2-bi
t dat
a in
terfa
ce, S
AV a
nd E
AV s
ynch
roni
zatio
n, p
revie
w p
ath
with
sca
ling,
out
put i
s in
YCb
Cr fo
rmat
; Bay
er R
AW is
sup
porte
d on
the
ATSA
MA5
D2 s
eries
. 10.
Gra
phics
LCD
: 24-
bit p
arall
el in
terfa
ce;
supp
orts
STN
and
TFT
disp
lays,
up
to 1
6-bi
ts p
er p
ixel in
STN
col
or m
ode,
up
to 1
6M c
olor
s in
TFT
mod
e. 1
1. V
ideo
Dec
oder
: Har
dwar
e vid
eo d
ecod
ing
and
imag
e po
st p
roce
ssin
g: H
.264
, MPE
G4,
H.2
63, M
PEG
2, J
PEG
, VP8
. 12.
eM
MC™
: V4.
3 –
MLC
NAN
D Fl
ash
sup-
porte
d th
roug
h eM
MC
inte
rface
; V4.
5 su
ppor
t for
the
ATSA
MA5
D2 s
eries
. 13.
USB
: Hig
h sp
eed
(HS)
, Ful
l Spe
ed (F
S), H
igh
Spee
d In
ter-C
hip
(HSI
C) 1
4. P
erip
hera
l impl
emen
tatio
n va
ries
amon
g pr
oduc
ts. C
onsu
lt in
divid
ual p
rodu
ct d
atas
heet
s fo
r a d
etail
ed d
escr
iptio
n.
www.microchip.com16
32-b
it M
icro
proc
esso
rs
Prod
uct
Cor
e Su
b-Sy
stem
Mem
ory
Con
nect
ivity
Use
r Int
erfa
ceSe
curit
yC
ontr
ol
Packages
Core
Clock Speed (MHz)*
Core Operating Voltage
SRAM (KB)
L1 Cache Memory (KB) (Instruction/Data)
LPSDR/SDRAM
External Bus Interface
DDR2/LPDDR/LPDDR2
NAN
D
UART
SPI
TWI (I²C)
SSC (I2S)
CAN
USB
Ethernet10/100 Ethernet MAC
SD/eMMC
Soft Modem
Max I/O Pins
Graphic LCD
LCD Overlay
Resistive Touchscreen
Hardware Video Decoder
Camera Interface
Security Level
Secure Boot
16-bit Timers
32-bit Timers
PWM Channels
10-bit ADC Channels
SLC ECC (bit)MLC ECC (bit)
Device Only
Device and Host
Host Only
ATSA
M9
ATSA
M9M
10/
M11
ARM
926E
J-S
400
1.0V
642
× 32
1/1
21/
1/-
1–
56
22
––
1 HS
2 HS
12
–16
01
YY
30fp
s,
D11
Med
. (M
11)
–6
–4
8BG
A 32
4, 1
5 ×
15, 0
.8 m
m p
itch
ATSA
M9G
45/
G46
ARM
926E
J-S
400
1.0V
642
× 32
1/1
21/
1/-
1–
56
22
––
1 HS
2 HS
12
–16
01
–Y
–1
Med
. (G
46)
–6
–4
8BG
A 32
4, 1
5 ×
15, 0
.8 m
m p
itch
ATSA
M9X
35AR
M92
6EJ-
S40
01.
0V32
2 ×
161/
11
1/1/
-24
247
53
12
–1
HS1
HS,
1 FS
12
Y10
51
YY
––
––
–6
412
BGA
217,
15
× 15
, 0.8
mm
pitc
h
ATSA
M9X
25AR
M92
6EJ-
S40
01.
0V32
2 ×
161/
11
1/1/
-24
247
63
12
–1
HS1
HS,
1 FS
22
Y10
5–
––
––
––
–6
412
BGA
217,
15
× 15
, 0.8
mm
pitc
h
ATSA
M9G
35AR
M92
6EJ-
S40
01.
0V32
2 ×
161/
11
1/1/
-24
246
53
1–
–1
HS1
HS,
1 FS
12
Y10
51
YY
––
––
–6
412
BGA
217,
15
× 15
, 0.8
mm
pitc
h
ATSA
M9G
25AR
M92
6EJ-
S40
01.
0V32
2 ×
161/
11
1/1/
-24
247
63
1–
–1
HS1
HS,
1 FS
12
Y10
5–
––
–1
––
–6
412
BGA
217,
15
× 15
, 0.8
mm
pitc
h,
BGA
247,
10
× 10
, 0.5
mm
pitc
h
ATSA
M9G
15AR
M92
6EJ-
S40
01.
0V32
2 ×
161/
11
1/1/
-24
245
53
1–
–1
HS1
HS,
1 FS
–2
Y10
51
YY
––
––
–6
412
BGA
217,
15
× 15
, 0.8
mm
pitc
h
ATSA
M9C
N12
ARM
926E
J-S
400
1.0V
322
× 16
1/1
11/
1/-
2424
76
21
–1
FS–
1 FS
–1
–10
51
–Y
––
Med
.Y
6–
412
BGA
217,
15
× 15
, 0.8
mm
pitc
h,
BGA
247,
10
× 10
, 0.5
mm
pitc
h
ATSA
M9C
N11
ARM
926E
J-S
400
1.0V
322
× 16
1/1
11/
1/-
2424
76
21
–1
FS–
1 FS
–1
–10
51
–Y
––
––
6–
412
BGA
217,
15
× 15
, 0.8
mm
pitc
h,
BGA
247,
10
× 10
, 0.5
mm
pitc
h
ATSA
M9N
12AR
M92
6EJ-
S40
01.
0V32
2 ×
161/
11
1/1/
-24
247
62
1–
1 FS
–1
FS–
1–
105
1–
Y–
––
–6
–4
12BG
A 21
7, 1
5 ×
15, 0
.8 m
m p
itch,
BG
A 24
7, 1
0 ×
10, 0
.5 m
m p
itch
ATSA
M9G
20AR
M92
6EJ-
S40
01.
0V32
2 ×
32–/
11
–1
–7
61
1–
1 FS
–2
FS1
1–
96–
––
–Y
––
6–
–4
BGA
217,
15
× 15
, 0.8
mm
pitc
h
ATSA
M9G
10AR
M92
6EJ-
S26
61.
2V16
2 ×
16–/
11
–1
–4
51
3–
1 FS
–2
FS–
1–
961
––
––
––
3–
––
BGA
217,
15
× 15
, 0.8
mm
pitc
h
ATSA
M92
63AR
M92
6EJ-
S24
01.
3V96
2 ×
16–/
12
–1
–4
51
21
1 FS
–2
FS1
2–
160
1–
––
Y–
–3
–4
–BG
A 32
4, 1
5 ×
15, 0
.8m
m p
itch
ATSA
M92
61AR
M92
6EJ-
S19
01.
2V16
02
× 16
–/1
1–
1–
45
13
–1
FS–
2 FS
–1
–96
1–
––
––
–3
––
–BG
A 21
7, 1
5 ×
15, 0
.8 m
m p
itch
ATSA
M92
60AR
M92
6EJ-
S19
01.
2V8
2 ×
8–/
11
–1
–7
61
1–
1 FS
–2
FS1
1–
96–
––
–Y
––
6–
–4
BGA
217,
15
× 15
, 0.8
mm
pitc
h,
QFP
208
, 28
× 28
, 0.
5 m
m p
itch
SAM
9X60
ARM
926E
J-S
600
1.2V
642
× 32
1/1
11/
1/-
2424
136
132
2–
1 HS
2 HS
22
–1
YY
–1
Adv.
Y–
64
–BG
A 22
8, 1
1 ×
11, 0
.65
mm
pitc
h
SAM
9X60
D6K
ARM
926E
J-S
600
1.2V
642
× 32
1/1
11/
1/-
2424
136
132
2–
1 HS
2 HS
22
–1
YY
–1
Adv.
Y–
64
–BG
A 19
6, 1
1 ×
11, 0
.65
mm
pitc
h
SAM
9X60
D5M
ARM
926E
J-S
600
1.2V
642
× 32
1/1
11/
1/-
2424
136
132
2–
1 HS
2 HS
22
–1
YY
–1
Adv.
Y–
64
–BG
A 23
3, 1
4 ×
14, 0
.8 m
m p
itch
SAM
9X60
D1G
ARM
926E
J-S
600
1.2V
642
× 32
1/1
11/
1/-
2424
136
132
2–
1 HS
2 HS
22
–1
YY
–1
Adv.
Y–
64
–BG
A 23
3, 1
4 ×
14, 0
.8 m
m p
itch
* Clo
ck s
peed
: Max
. clo
ck s
peed
@ +
85°C
. Not
es: 1
. Tem
pera
ture
Ran
ge: −
40°C
to +
85°C
(am
bien
t) 2.
UAR
T: S
uppo
rt fo
r RS4
85, I
SO78
16, I
rDA,
LIN
, mod
em c
ontro
l line
s an
d SP
I on
selec
ted
UART
s. 3
. TW
I: Tw
o-W
ire In
terfa
ce; i
nter
conn
ects
com
pone
nts
on a
two-
wire
bus
. 4.
SSC
: Ser
ial S
ynch
rono
us C
ontro
ller,
supp
orts
man
y se
rial s
ynch
rono
us c
omm
unica
tions
pro
toco
ls us
ed in
aud
io a
nd te
lecom
app
licat
ions
suc
h as
I2 S, s
hort
or lo
ng fr
ame
sync
. 5. 1
6-bi
t and
32-
bit T
imer
s: C
aptu
re/c
ompa
re, w
avef
orm
gen
erat
ion
and
PWM
mod
es. 6
. ECC
: Er
ror C
orre
ctio
n Co
de c
ontro
ller.
7. S
ecur
ity le
vel:
Adv.
= ha
rdw
are
encr
yptio
n en
gine
+ o
n th
e fly
DDR
enc
rypt
ion/
decr
yptio
n +
secu
re s
tora
ge +
tam
per p
ins;
Med
. = h
ardw
are
encr
yptio
n en
gine
onl
y. 8.
Y =
Yes
9. C
amer
a In
terfa
ce: F
or C
MO
S-ty
pe im
age
sens
or, I
TU-R
BT,
60
1/65
6 ex
tern
al in
terfa
ce, p
rogr
amm
able
fram
e ca
ptur
e ra
te, u
p to
12-
bit d
ata
inte
rface
, SAV
and
EAV
syn
chro
niza
tion,
pre
view
pat
h w
ith s
calin
g, o
utpu
t is
in Y
CbCr
form
at; R
aw B
ayer
is s
uppo
rted
on th
e AT
SAM
A5D2
ser
ies. 1
0. G
raph
ics L
CD: 2
4-bi
t par
allel
inte
rface
; sup
-po
rts S
TN a
nd T
FT d
isplay
s, u
p to
16-
bits
per
pixe
l in S
TN c
olor
mod
e, u
p to
16M
col
ors
in T
FT m
ode.
11.
Vid
eo D
ecod
er: H
ardw
are
video
dec
odin
g an
d im
age
post
pro
cess
ing:
H.2
64, M
PEG
4, H
.263
, MPE
G2,
JPE
G, V
P8. 1
2. e
MM
C™: V
4.3
– M
LC N
AND
Flas
h su
ppor
ted
thro
ugh
eMM
C in
terfa
ce; V
4.5
supp
ort f
or th
e AT
SAM
A5D2
ser
ies. 1
3. U
SB: H
igh
spee
d (H
S), F
ull S
peed
(FS)
, Hig
h Sp
eed
Inte
r-Chi
p (H
SIC)
14.
Per
iphe
ral im
plem
enta
tion
varie
s am
ong
prod
ucts
. Con
sult
indi
vidua
l pro
duct
dat
ashe
ets
for a
det
ailed
des
crip
tion.
Focus Product Selector Guide 17
Ther
mal
Man
agem
ent:
Tem
pera
ture
Sen
sors
Prod
uct
Des
crip
tion
# Te
mps
. M
onito
red
Typi
cal/M
ax
Accu
racy
(°C
)Te
mp.
Ran
ge
(°C)
Vcc
Ran
ge (V
)Ty
pica
l Sup
ply
Cur
rent
(µA)
Aler
tsR
esis
tanc
e Er
ror
Cor
rect
ion
Beta
C
ompe
nsat
ion
Pack
ages
MC
P950
1/2/
3/4
Tem
pera
ture
Sw
itch
Repl
acin
g M
AX65
01/2
/3/4
11.
0/3.
0−4
0 to
+12
5+2
.7 to
+5.
525
––
–5-
pin
SOT-
23
MC
P950
9/10
Resis
tor-P
rogr
amm
able
Tem
pera
ture
Sw
itch
10.
5/3.
5−4
0 to
+12
5+2
.7 to
+5.
530
––
–5-
pin
SOT-
23
MC
P980
0/1/
2/3
SMBu
s/I² C
Tem
pera
ture
Sen
sor
10.
5/1.
0−5
5 to
+12
5+2
.7 to
+5.
520
01
––
5-pi
n SO
T-23
MC
P980
4SM
Bus/
I² C T
empe
ratu
re S
enso
r1
0.25
/1.0
−40
to +
125
+2.7
to +
5.5
200
1–
–8-
pin
DFN,
8-p
in M
SOP
MC
P980
8SM
Bus/
I² C T
empe
ratu
re S
enso
r1
0.25
/0.5
−40
to +
125
+2.7
to +
5.5
200
1–
–8-
pin
DFN,
8-p
in M
SOP
MC
P982
44SM
Bus/
I² C T
empe
ratu
re S
enso
r with
EEP
ROM
1
0.5/
3.0
−40
to +
125
+2.2
to +
3.6
100
1–
–8-
pin
TDFN
MC
P990
2/3/
4Lo
wer
Tem
pera
ture
Mul
ti-Te
mpe
ratu
re S
enso
rs2/
3/4
0.25
/1.0
−40
to +
125
+3.0
to +
3.6
200
1ü
Auto
mat
ic8-
pin
WDF
N, 1
0-pi
n VD
FN
TCN
75A
SMBu
s/I² C
Tem
pera
ture
Sen
sor
10.
5/3.
0−4
0 to
+12
5+2
.7 to
+5.
520
01
––
8-pi
n M
SOP,
8-p
in S
OIC
AT30
TS74
SMBu
s/I² C
Tem
pera
ture
Sen
sor
11.
0/2.
0−5
5 to
+12
5+1
.7 to
+5.
516
0–
––
4/5
ball W
LCSP
AT30
TS75
0ASM
Bus/
I² C T
empe
ratu
re S
enso
r with
NVM
10.
5/1.
0−5
5 to
+12
5+1
.7 to
+5.
515
0–
––
8-pi
n SO
IC, 8
-pin
MSO
P, 8
-pin
UDF
N
AT30
TS75
2A/4
A/8A
SMBu
s/I² C
Tem
pera
ture
Sen
sor w
ith N
VM,
2/4/
8 KB
Ser
ial E
EPRO
M1
0.5/
1.0
−55
to +
125
+1.7
to +
5.5
150
––
–8-
pin
SOIC
, 8-p
in M
SOP,
8-p
in U
DFN
MC
P970
0/01
Line
ar A
ctive
The
rmist
or IC
11.
0/4.
0−4
0 to
+15
0+2
.3 to
+5.
56
––
–3-
pin
SOT-
23, 3
-pin
TO
-92,
5-p
in S
C-70
MC
P970
0/01
ALi
near
Act
ive T
herm
istor
IC1
1.0/
2.0
−40
to +
150
+2.3
to +
5.5
6–
––
3-pi
n SO
T-23
, 3-p
in T
O-9
2, 5
-pin
SC-
70
EMC
1033
SMBu
s/I² C
Mul
ti-Te
mpe
ratu
re S
enso
r3
1.0/
3.0
−40
to +
125
+3.0
to +
3.6
502
ü–
8-pi
n M
SOP
EMC
1043
SMBu
s/I² C
Mul
ti-Te
mpe
ratu
re S
enso
r3
0.5/
1.0
−40
to +
125
+3.0
to +
3.6
105
–ü
Confi
gura
ble
8-pi
n M
SOP
EMC
1046
/7SM
Bus/
I² C M
ulti-T
empe
ratu
re S
enso
r with
Hot
test
of Z
ones
6/7
0.25
/1.0
−40
to +
125
+3.0
to +
3.6
395
–ü
Auto
mat
ic10
-pin
MSO
P
EMC
1412
/3/4
SMBu
s/I² C
Mul
ti-Te
mpe
ratu
re S
enso
r2/
3/4
0.25
/1.0
−40
to +
125
+3.0
to +
3.6
430
2ü
Auto
mat
ic8-
pin
TDFN
, 8-p
in M
SOP,
10-
pin
DFN,
10
-pin
MSO
P
EMC
1422
/3/4
SMBu
s/I² C
Mul
ti-Te
mpe
ratu
re S
enso
r with
Shu
tdow
n2/
3/4
0.25
/1.0
−40
to +
125
+3.0
to +
3.6
430
1ü
Auto
mat
ic8-
pin
MSO
P, 1
0-pi
n M
SOP
EMC
1438
SMBu
s/I² C
Mult
i-Tem
pera
ture
Sen
sor w
ith H
otte
st of
Zon
es8
0.25
/1.0
−40
to +
125
+3.0
to +
3.6
450
1ü
Auto
mat
ic16
-pin
QFN
Ther
mal
Man
agem
ent:
Sens
or C
ondi
tioni
ng IC
s
Prod
uct
Des
crip
tion
Typi
cal T
c Ac
cura
cy (°
C)
Typi
cal T
h Ac
cura
cy (°
C)
Tem
pera
ture
Ran
ge (°
C)
Vcc
Rang
e (V
)M
ax S
uppl
y C
urre
nt (μ
A)Pa
ckag
es
MC
P960
0Fu
lly In
tegr
ated
ther
moc
oupl
e EM
F to
tem
pera
ture
con
verte
r. Su
ppor
ts th
erm
ocou
ple
type
s K,
J, T
, N, S
, E, B
and
R.
11
-40
to +
125
2.7
to 5
.550
05
x 5
MQ
FN
MC
P96L
00Fu
lly In
tegr
ated
ther
moc
oupl
e EM
F to
tem
pera
ture
con
verte
r. Su
ppor
ts th
erm
ocou
ple
type
s K,
J, T
, N, S
, E, B
and
R.
14
-40
to +
125
2.7
to 5
.550
05
x 5
MQ
FN
MC
P96R
L00
Fully
Inte
grat
ed th
erm
ocou
ple
EMF
to te
mpe
ratu
re c
onve
rter.
Supp
orts
ther
moc
oupl
e ty
pes
K, J
, T, N
, S, E
, B a
nd R
.1
6-4
0 to
+12
52.
7 to
5.5
500
5 x
5 M
QFN
Ther
mal
Man
agem
ent:
Fan
Con
trol
lers
Prod
uct
Des
crip
tion
# Fa
n D
river
sPW
M/L
inea
r C
ontr
ol#
Exte
rnal
Te
mp.
Inpu
tsTy
pica
l Ac
cura
cy (º
)M
ax.
Accu
racy
(º)
Vcc
Ran
ge
(V)
Inte
rfac
eAl
erts
Fan
Spee
d Lo
okup
Tab
lePa
ckag
es
EMC
2101
Prog
ram
mab
le Fa
n Co
ntro
ller w
ith T
herm
al M
anag
emen
t1
PWM
20.
51.
0+3
.0 to
+3.
6SM
Bus/
I² Cü
ü8-
pin
MSO
P, 8
-pin
SO
IC
EMC
2103
-1Pr
ogra
mm
able
Fan
Cont
rolle
r with
The
rmal
Man
agem
ent
1PW
M1
0.5
1.0
+3.0
to +
3.6
SMBu
s/I² C
üü
12-p
in Q
FN
EMC
2104
Prog
ram
mab
le M
ulti-F
an C
ontro
ller w
ith T
herm
al M
anag
emen
t2
PWM
40.
251.
0+3
.0 to
+3.
6SM
Bus/
I² Cü
ü20
-pin
QFN
EMC
2301
/2/3
/5Pr
ogra
mm
able
Fan
Cont
rolle
r1/
2/3/
5PW
M–
––
+3.0
to +
3.6
SMBu
s/I² C
ü–
8-pi
n M
SOP,
10-
pin
MSO
P, 1
2-pi
n Q
FN, 1
6-pi
n Q
FN
Pow
er M
anag
emen
t: Sw
itchi
ng R
egul
ator
s
Prod
uct
Inpu
t Vol
tage
R
ange
(V)
Out
put V
olta
ge (V
) O
pera
ting
Tem
p.
Ran
ge (°
C)
Switc
hing
Fr
eque
ncy
(kH
z)
Out
put C
urre
nt (m
A)
Feat
ures
Pa
ckag
es
Sing
le O
utpu
t Sw
itchi
ng R
egul
ator
- St
ep D
own
Reg
ulat
or
MC
P160
1/3
2.7
to 5
.50.
9V to
Vin
−40
to +
8575
050
0UV
LO, A
uto-
Switc
hing
, LDO
/Ove
rtem
pera
ture
and
Ove
rcur
rent
Pro
tect
ion
8-pi
n M
SOP
www.microchip.com18
Pow
er M
anag
emen
t: Sw
itchi
ng R
egul
ator
s
Prod
uct
Inpu
t Vol
tage
R
ange
(V)
Out
put V
olta
ge (V
) O
pera
ting
Tem
p.
Ran
ge (°
C)
Switc
hing
Fr
eque
ncy
(kH
z)
Out
put C
urre
nt (m
A)
Feat
ures
Pa
ckag
es
Sing
le O
utpu
t Sw
itchi
ng R
egul
ator
- St
ep D
own
Reg
ulat
or
MC
P161
22.
7 to
5.5
0.8
to 5
.5−4
0 to
+85
1400
1000
Ove
rall E
fficien
cy >
94%
, Sof
t Sta
rt, O
verte
mpe
ratu
re a
nd O
verc
urre
nt P
rote
ctio
n8-
pin
MSO
P, 8
-pin
(3 ×
3)
DFN
MIC
2303
0/1
2.7
to 5
.51.
0, 1
.2, 1
.5, 1
.8, A
dj−4
0 to
+12
580
00/4
000
400
Hype
rLig
ht L
oad®
Mod
e6-
pin
1.6
x 1.
6 M
LF
MIC
2305
0/1
2.7
to 5
.51.
0, 1
.2, 1
.8, 3
.3/1
-1.2
, 1-1
.8,
1.15
-1.4
, 0.9
5-1.
25
−40
to +
125
4000
600
Hype
rLig
ht L
oad
Mod
e8-
pin
2 x
2 M
LF
MIC
2315
0/3
2.7
to 5
.51.
0, 1
.2, 1
.35,
1.8
, 3.3
/1.8
, Adj
−40
to +
125
4000
2000
Hype
rLig
ht L
oad
Mod
e8-
pin
2 x
2 M
LF
MIC
2315
52.
7 to
5.5
1.8,
Adj
−40
to +
125
3000
2000
Pow
er G
ood,
Hyp
erLi
ght L
oad
Mod
e10
-pin
2.5
x 2
.5 M
FL
MIC
2330
32.
7 to
5.5
Adj
−40
to +
125
4000
3000
Pow
er G
ood,
Hyp
erLi
ght L
oad
Mod
e12
-pin
3 x
3 M
LF
MC
P163
11/1
24.
4 to
30.
02.
0 to
24.
0−4
0 to
+12
550
010
00PF
M/P
WM
Ope
ratio
n, E
nabl
e Fu
nctio
n8-
pin
MSO
P,
8-pi
n (2
× 3
) TDF
N
MC
P163
014.
0 to
30
2.0
to 1
5−4
0 to
+85
500
600
Inte
grat
ed N
-cha
nnel,
UVL
O, S
oft S
tart,
Ove
rtem
pera
ture
Pro
tect
ion
6-pi
n SO
T-23
MIC
2404
54.
5 to
19
0.7
to 3
.3−4
0 to
+12
540
0–79
060
00I² C
Pro
gram
mab
le, 4
.5V-
19V
Inpu
t20
-pin
(3 ×
3) Q
FN
MIC
2404
64.
5 to
19
0.7
to 3
.3−4
0 to
+12
540
0–79
060
00Pi
n Se
lecta
ble,
4.5
V-19
V In
put
20-p
in (3
× 3
) QFN
MIC
2405
1/53
/55
4.5
to 1
9Ad
j.−4
0 to
+12
560
060
0/90
00/1
200
Pow
er G
ood,
Sof
t Sta
rt, C
OT
Regu
latio
n Sc
hem
e28
-pin
(5 ×
6) Q
FN
MIC
2405
2/54
/56
4.5
to 1
9Ad
j.−4
0 to
+12
560
060
0/90
00/1
200
Pow
er G
ood,
Sof
t Sta
rt, H
yper
Ligh
t Loa
d M
ode
28-p
in (5
× 6
) QFN
MIC
2660
1/M
IC26
901/
MIC
2695
04.
5 to
28
Adj.
−40
to +
125
600
6000
/900
0/12
000
Pow
er G
ood,
Sof
t Sta
rt, H
yper
Spe
ed C
ontro
l® A
rchi
tect
ure
28-p
in (5
× 6
) QFN
MIC
2660
3/M
IC26
903
4.5
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erLi
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oad
Mod
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-pin
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6) Q
FN
MIC
2760
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36
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125
300
7000
Soft
Star
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T Re
gulat
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Con
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2851
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125
100–
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4000
Soft
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er S
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Con
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herm
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2851
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520
0–68
030
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er G
ood,
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t Sta
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yper
Ligh
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ode,
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er S
peed
Con
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24-p
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FN
MIC
2851
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527
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00Po
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Goo
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ft St
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MIC
2851
4), H
yper
Spe
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hite
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elect
able
Hype
rLig
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CCM
mod
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IC28
515)
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6 m
m P
QFN
MC
P162
3/4
0.65
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.52.
0 to
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−40
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8550
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5In
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syn
chro
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boo
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gulat
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.65V
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ft st
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true
load
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pin
SOT-
23,
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MC
P162
51/2
0.82
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8 to
5.5
−40
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CP16
251)
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put t
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CP16
252)
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T-23
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pin
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FN
MC
P164
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C/D
0.65
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.52.
0 to
5.5
−40
to +
8550
080
0In
tegr
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syn
chro
nous
boo
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gulat
or, 0
.65V
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rt-up
vol
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, sof
t sta
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true
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disc
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-out
put b
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tion
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T-23
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pin
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3) D
FN
MC
P164
2B/D
0.65
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8 to
5.5
−40
to +
8510
0018
00In
tegr
ated
syn
chro
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boo
st re
gulat
or, 0
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vol
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P,
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) DFN
MIC
2877
2.5
to 5
.5Up
to V
in−4
0 to
+12
565
0048
006.
5A IS
W, S
ynch
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oost
Reg
ulat
or w
ith B
idire
ctio
nal L
oad
Disc
onne
ct a
nd B
ypas
s M
ode
8-pi
n 2
× 2
mm
FTQ
FN
MIC
2145
2.4
to 1
6Up
to 1
6−4
0 to
+85
450
900
High
-Effic
iency
2.5
W B
oost
Con
verte
r8-
pin
MSO
P, 3
× 3
MLF
MIC
2253
2.5
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0Up
to 3
0−4
0 to
+12
510
0035
003.
5A, 1
MHz
Hig
h-Effi
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ost R
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ator
with
OVP
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Sof
t Sta
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-pin
3 ×
3 M
LF
MIC
2290
2.5
to 1
0Up
to 3
4−4
0 to
+12
512
0075
0PW
M B
oost
Reg
ulat
or w
ith In
tern
al Sc
hottk
y Di
ode
8-pi
n 2
× 2
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MIC
2295
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2.5
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4−4
0 to
+12
512
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0017
00Hi
gh P
ower
Den
sity
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5-pi
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T23,
2 ×
2 M
LF
MC
P166
3/4
2.4
to 5
.5Up
to 3
2−4
0 to
+85
500
1800
High
-effic
iency
(up
to 9
2%),
fi×ed
-freq
uenc
y, no
n-sy
nchr
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s,
300
mV
feed
back
for L
ED d
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g (M
CP16
64)
5-pi
n SO
T-23
, 8-
pin
(2 ×
3) T
DFN
MC
P166
52.
7 to
5Up
to 3
2−4
0 to
+85
500
3600
3.6A
Inte
grat
ed S
witc
h PF
M/P
WM
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st R
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10-p
in 2
x 2
VQ
FN
MIC
2601
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4.5
to 2
0Up
to 4
0−4
0 to
+12
512
00/2
000
1700
1.2A
, 1.2
MHz
/2 M
Hz W
ide
Inpu
t Ran
ge In
tegr
ated
Sw
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Boos
t Reg
ulat
or8-
pin
2 ×
2 M
LF
Focus Product Selector Guide 19
Pow
er M
anag
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t: Sw
itchi
ng R
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ator
s
Prod
uct
Inpu
t Vol
tage
R
ange
(V)
Out
put V
olta
ge (V
) O
pera
ting
Tem
p.
Ran
ge (°
C)
Switc
hing
Fr
eque
ncy
(kH
z)
Out
put C
urre
nt (m
A)
Feat
ures
Pa
ckag
es
Sing
le O
utpu
t Sw
itchi
ng R
egul
ator
- St
ep D
own
Reg
ulat
or
MIC
2171
/72
3 to
40
Up to
65
−40
to +
8510
025
00/1
250
100
kHz
2.5A
/1.2
5A S
witc
hing
Reg
ulat
or5-
pin
TO22
0, T
O26
3/
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n SO
IC, 8
-pin
DIP
Mul
tiple
Out
put S
witc
hing
Reg
ulat
ors
MIC
2800
/10
2.9
to 5
.5Ad
j./Ad
j.−4
0 to
+12
52.
0 M
Hz60
0/30
0/30
060
0 m
A Bu
ck R
egul
ator
, 2 ×
300
mA
LDO
, Low
Q M
ode
(MIC
2810
)16
-pin
(3 ×
3) M
LF
MIC
2238
/30
2.5
to 5
.51.
28/1
.65,
1.8
/1.2
, 1.8
/1.5
45,
1.8/
1.57
5, 1
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.3, 1
.8/1
.6, 2
.5/1
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3.3/
1.2,
3.3
/3.3
, Adj
./Adj
.−4
0 to
+12
52.
5 M
Hz80
0/80
0Po
wer
Goo
d, S
oft S
tart,
Cur
rent
Lim
it Pr
otec
tion,
Dua
l Out
put V
olta
ges
12-p
in (3
× 3
) MLF
MIC
2325
02.
7 to
5.5
0.9/
1.1,
1.2
/1.0
, 1.2
/1.6
, 1.2
/1.8
, 1.
2/2.
8, 1
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, 2.6
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, Ad
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0 to
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Hz40
0/40
020
mVp
p in
Hyp
erLi
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oad®
Mod
e, S
oft S
tart,
Ultr
a-Fa
st T
rans
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espo
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, 12-
pin
(2.5
× 2
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LF
MIC
2325
42.
5 to
5.5
1.0/
1.8
−40
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125
4.0
MHz
400/
400
20 m
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in H
yper
Ligh
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ode,
Sof
t Sta
rt, U
ltra-
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t Res
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e10
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2) T
hin
MLF
MIC
2345
02.
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5.5
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Adj./
Adj.
−40
to +
125
3.0
MHz
2000
/200
0/20
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wer
Goo
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oft S
tart,
Hyp
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oad
Mod
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-pin
(5 ×
5) Q
FN
MIC
2442
04.
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15
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Adj.
−40
to +
125
1 M
Hz25
00/2
500
Pow
er G
ood,
Sof
t Sta
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-pin
(4 ×
4) M
LF
MIC
2442
14.
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15
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−40
to +
125
500
kHz
2500
/250
0Po
wer
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d, S
oft S
tart
24-p
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MIC
2315
82.
7 to
5.5
Adj./
Adj.
−40
to +
125
3.0
MHz
2000
/200
0Po
wer
Goo
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oft S
tart,
Hyp
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oad
Mod
e20
-pin
(3 ×
4) M
LF
MIC
2315
92.
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5.5
Adj./
Adj.
−40
to +
125
3.0
MHz
2000
/200
0Po
wer
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oft S
tart,
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erLi
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oad
Mod
e20
-pin
(3 ×
4) M
LF
MIC
2345
12.
7 to
5.5
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Adj./
Adj.
−40
to +
125
3.0
MHz
2000
/200
0/20
00Po
wer
Goo
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oft S
tart,
Hyp
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ght L
oad
Mod
e26
-pin
(4 ×
4) Q
FN
MIC
7400
/12.
4 to
5.5
1.1,
1.8
, 1.0
5, 1
.25,
12
or
Confi
gura
ble
−40
to +
125
2 M
Hz B
oost
, 1.
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Hz B
ucks
DC to
DC
Buck
s: 3
,000
, DC
/DC
Boos
t 200
High
ly in
tegr
ated
-con
figur
able,
feat
urin
g fiv
e bu
ck re
gulat
ors,
one
boo
st re
gulat
or
and
glob
al Po
wer
Goo
d in
dica
tor/e
nabl
e pi
n 36
-pin
4.5
× 4
.5 Q
FN
Pow
er M
anag
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t: In
duct
orle
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fflin
e Sw
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s
Prod
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Vin (V
ac)
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stab
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ou
t (V)
Fixe
d Vo
ut (
V)Io
ut M
ax. (
mA)
Load
Reg
ulat
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(%/m
A)Pa
ckag
es
SR08
680
–285
9.0–
503.
310
00.
025
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OIC
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Hea
t Slu
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1080
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6.0–
286.
0, 1
2, 2
460
–8-
Lead
SO
IC
Pow
er M
anag
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Aux
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ontr
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Prod
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(V)
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t Vol
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(V)
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quen
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in
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requ
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(k
Hz)
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TR
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n (M
ax,
25C
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verc
urre
nt
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ther
Pro
tect
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Pack
age
MC
P101
216
V (Ty
pica
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0V C
ontin
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/700
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VLO
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t: PW
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ontr
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Prod
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Supp
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polo
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Supp
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tsIn
put V
olta
ge
Ran
ge (V
)O
utpu
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ltage
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ratin
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mpe
ratu
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Ran
ge (°
C)
Feat
ures
Pack
ages
MIC
2103
/4Sy
nc. B
uck
14.
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0.8–
2420
0–60
0 kH
z−4
0 to
+12
5Hy
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ode,
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erna
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ck S
ync,
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ood,
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t Sta
rt,
Inte
rnal
Com
pens
atio
n an
d Vo
ltage
Bias
16-p
in 3
× 3
MLF
MIC
2124
Sync
. Buc
k1
3.0–
180.
8–12
300
kHz
−40
to +
125
Soft
Star
t, In
tern
al Vo
ltage
Bias
10-p
in M
SOP
MIC
2130
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nc. B
uck
18.
0–40
0.7–
2415
0/40
0 kH
z−4
0 to
+12
5Po
wer
Goo
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oft S
tart,
Inte
rnal
Volta
ge B
ias16
-pin
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SSO
P,
16-p
in 4
× 4
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MIC
2150
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nc. B
uck
24.
5–14
.50.
7–5.
550
0 kH
z−4
0 to
+12
5Po
wer
Goo
d, S
oft S
tart,
Inte
rnal
Volta
ge B
ias24
-pin
4 ×
4 M
LF
MIC
2183
Sync
. Buc
k1
2.9–
141.
3–12
200/
400
kHz
−40
to +
125
Exte
rnal
Cloc
k Sy
nc, S
oft S
tart,
Inte
rnal
Volta
ge B
ias16
-pin
SO
P, 1
6-pi
n Q
SOP
MIC
2184
Asyn
c. B
uck
12.
9–14
1.3–
1220
0/40
0 kH
z−4
0 to
+12
5Ex
tern
al Cl
ock
Sync
, Sof
t Sta
rt, In
tern
al Vo
ltage
Bias
16-p
in S
OP,
16-
pin
QSO
P
MIC
2185
/86
Boos
t, SE
PIC,
Ćuk
12.
9–14
3.3–
1410
0/20
0/40
0 kH
z−4
0 to
+12
5Sk
ip M
ode,
Ext
erna
l Clo
ck S
ync,
Sof
t Sta
rt, In
tern
al Vo
ltage
Bias
16-p
in S
OIC
, 16-
pin
QSO
P
www.microchip.com20
Pow
er M
anag
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t: PW
M C
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Prod
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Supp
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Supp
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utpu
tsIn
put V
olta
ge
Ran
ge (V
)O
utpu
t Vo
ltage
(V)
Ope
ratin
g Fr
eque
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Ope
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mpe
ratu
re
Ran
ge (°
C)
Feat
ures
Pack
ages
MIC
38H
C42
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/5Fo
rwar
d, F
lybac
k1
9.0
up to
20
–Ad
j. to
500
kHz
−40
to +
85Fo
rwar
d, F
lybac
k Su
ppor
ted
Topo
logi
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pin
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14-
pin
PDIP,
8-
pin
SOIC
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pin
SOIC
MIC
9130
/1Fo
rwar
d, F
lybac
k1
9.0–
180
–Ad
j. up
to 1
.5 M
Hz−4
0 to
+12
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k Su
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logi
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nal C
lock
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-pin
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MC
P163
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2Fl
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k, B
oost
, SEP
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uk1
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p to
2 M
Hz−4
0 to
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5Ex
tern
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Sync
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rent
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ort C
ircui
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tect
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Sof
t Sta
rt,
Inte
rnal
Volta
ge B
ias, U
VLO
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k Cu
rrent
Con
trol M
ode
20-p
in TS
SOP,
20-p
in SS
OP,
20 p
in 4
× 4
QFN
MC
P163
1HV
Flyb
ack,
Boo
st, S
EPIC
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13.
5–16
–Sy
nc. t
o 2
MHz
−40
to +
125
Exte
rnal
Cloc
k Sy
nc, C
urre
nt L
imit/
Shor
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rote
ctio
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-pin
TSSO
P, 20
-pin
SSOP
MC
P190
35Sy
nc. B
uck
14.
5–30
–30
0/60
0 kH
z−4
0 to
+12
5Po
wer G
ood,
Sof
t Sta
rt, In
tern
al Vo
ltage
Bias
, UVL
O, C
urre
nt L
imit/S
hort
Circ
uit P
rote
ction
10-p
in 3
× 3
DFN
MIC
2128
/27A
Sync
. Buc
k1
4.5–
750.
6–32
270–
800k
Hz−4
0 to
+12
5In
tern
al an
d Ex
tern
al so
ft st
art,
Inte
rnal
LDO
, Sho
rt Ci
rcuit
Pro
tect
ion, C
urre
nt lim
it16
-pin
3 ×
3 D
FN
Pow
er M
anag
emen
t: H
ybrid
PW
M C
ontr
olle
rs
Part
#In
put V
olta
ge
Ran
ge (V
)O
utpu
t Vo
ltage
(V)
Topo
logi
es
Supp
orte
dC
hann
els
Inte
grat
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MC
UPr
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emor
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Wor
ds)
RAM
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PIO
Prod
uct F
eatu
res
Inte
grat
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CU
, LD
O, M
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river
s,
10b
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Con
vert
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Sens
or, U
ser-
Con
figur
able
Ope
ratio
n an
d:Pa
ckag
es
MC
P191
10
MC
P191
114.
5–32
0.5
to 9
0%
of V
inSy
nc. B
uck
1ü
425
611
14
Confi
gura
ble
and
dyna
mica
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hang
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e in
tern
al an
alog
com
pens
atio
n ne
twor
k24
-pin
4×4
QFN
28
-pin
5×5
QFN
MC
P191
14
MC
P191
154.
5–42
Topo
logy
De
pend
ent
Boos
t, Fl
ybac
k,
SEPI
C, Ć
uk1
ü4
256
8 12Ex
celle
nt re
gulat
ion
for c
onst
ant c
urre
nt a
pplic
atio
ns24
-pin
4×4
QFN
28
-pin
5×5
QFN
MC
P191
16
MC
P191
174.
5–42
Topo
logy
De
pend
ent
Boos
t, Fl
ybac
k,
SEPI
C, Ć
uk1
ü8
336
8 12Im
prov
ed c
urre
nt re
gulat
ion
accu
racy
, add
itiona
l cod
e sp
ace
(com
pare
d to
MCP
1911
4 or
MCP
1911
5)24
-pin
4×4
QFN
28
-pin
5×5
QFN
MC
P191
18
MC
P191
194.
5–40
0.5
to 9
0%
of V
inSy
nc. B
uck
1ü
425
611
14
Confi
gura
ble
and
dyna
mica
lly c
hang
eabl
e in
tern
al an
alog
com
pens
atio
n ne
twor
k24
-pin
4×4
QFN
28
-pin
5×5
QFN
MC
P191
22
MC
P191
234.
5–40
0.3–
16Sy
nc. B
uck
1ü
425
612
16
Emul
ated
ave
rage
cur
rent
mod
e co
ntro
l, pr
ogam
mab
le ga
in fe
edba
ck a
mpl
ifier,
mul
tipha
se o
pera
tion,
im
prov
ed re
gulat
ion
accu
racy
and
cur
rent
mea
sure
men
t acc
urac
y (c
ompa
red
to M
CP19
110/
1/8/
9)24
-pin
4×4
QFN
28
-pin
5×5
QFN
MC
P191
24
MC
P191
254.
5–42
Topo
logy
De
pend
ent
Boos
t, Fl
ybac
k,
SEPI
C, Ć
uk1
ü4
256
8 12Du
al in
depe
nden
t vol
tage
and
cur
rent
con
trol lo
ops
allow
sea
mles
s tra
nsitio
ns
from
con
stan
t vol
tage
to c
onst
ant c
urre
nt re
gulat
ion
24-p
in 4
×4 Q
FN
28-p
in 5
×5 Q
FN
MC
P192
14
MC
P192
154.
5–42
Topo
logy
De
pend
ent
Boos
t, Fl
ybac
k,
SEPI
C, Ć
uk2
ü8
336
8 12Du
al ch
anne
ls, w
hich
can
be
confi
gure
d to
con
trol t
wo
outp
uts,
or o
ne b
idire
ctio
nal s
yste
m28
-pin
5×5
QFN
32
-pin
5×5
QFN
Pow
er M
anag
emen
t: Po
wer
Mod
ules
Prod
uct
Inpu
t Vol
tage
R
ange
(V)
Out
put V
olta
ge (V
)O
pera
ting
Tem
p.
Ran
ge (°
C)
Con
trol
Sch
eme
Switc
hing
Fr
eque
ncy
(kH
z)Vo
ut M
a×.
(V)
Out
put
Cur
rent
(A)
Feat
ures
Pack
ages
MIC
2830
4-1/
-24.
5 to
70
Adj.
−40
to +
125
COT
600
243
Hype
rLig
ht L
oad®
Mod
e, H
yper
Spe
ed C
ontro
l® A
rchi
tect
ure,
Pow
er G
ood,
Sof
t Sta
rt64
-pin
(12
× 12
) QFN
MIC
4520
5-1/
-24.
5 to
26
Adj.
−40
to +
125
COT
200–
600
5.5
6Hy
perL
ight
Loa
d M
ode,
Hyp
er S
peed
Con
trol A
rchi
tect
ure,
Pow
er G
ood,
Sof
t Sta
rt52
-pin
(8 ×
8) Q
FN
MIC
4520
8-1/
-24.
5 to
26
Adj.
−40
to +
125
COT
200–
600
5.5
10Hy
perL
ight
Loa
d M
ode,
Hyp
er S
peed
Con
trol A
rchi
tect
ure,
Pow
er G
ood,
Sof
t Sta
rt52
-pin
(10
× 10
) QFN
MIC
4521
2-1/
-24.
5 to
26
Adj.
−40
to +
125
COT
200–
600
5.5
14Hy
perL
ight
Loa
d M
ode,
Hyp
er S
peed
Con
trol A
rchi
tect
ure,
Pow
er G
ood,
Sof
t Sta
rt64
-pin
(12
× 12
) QFN
MIC
3303
02.
7 to
5.5
1.2,
1.8
, Adj
.−4
0 to
+12
5PW
M
8,00
03.
60.
4Hy
perL
ight
Loa
d M
ode
10-p
in (2
.5 ×
2.0
) MLF
®
MIC
3305
02.
7 to
5.5
1.0,
1.2
, 1.8
, 3.3
, Adj
.−4
0 to
+12
5PW
M
4,00
03.
30.
6Hy
perL
ight
Loa
d M
ode
12-p
in (3
× 3
) MLF
MIC
3315
32.
7 to
5.5
1.2,
Adj
.−4
0 to
+12
5PW
M
4,00
03.
61.
2Hy
perL
ight
Loa
d M
ode,
Pow
er G
ood,
Sof
t Sta
rt14
-pin
(3 ×
3.5
) MLF
MIC
3385
2.7
to 5
.51.
5, A
dj.
−40
to +
125
PWM
8,
000
5.5
0.6
Low
Q14
-pin
(3 ×
3.5
) MLF
MIC
2830
3-1/
-24.
5 to
50
Adj.
−40
to +
125
COT
600
243
Hype
rLig
ht L
oad
Mod
e, H
yper
Spe
ed C
ontro
l Arc
hite
ctur
e, P
ower
Goo
d, S
oft S
tart
64-p
in (1
2 ×
12) Q
FN
MIC
4511
6-1/
-24.
5 to
20
Adj.
−40
to +
125
COT
600
176
Hype
rLig
ht L
oad
Mod
e, H
yper
Spe
ed C
ontro
l Arc
hite
ctur
e, P
ower
Goo
d, S
oft S
tart
52-p
in (8
× 8
) QFN
MIC
4540
44.
5 to
19
Selec
tabl
e−4
0 to
+12
5Fi
xed
400–
790
3.3
5Po
wer
Goo
d, S
oft S
tart
64-p
in (6
× 1
0) Q
FN
Focus Product Selector Guide 21
Pow
er M
anag
emen
t: Li
near
Reg
ulat
ors
Part
#±V
in M
in (V
)±V
in M
ax (V
)O
utpu
t Vol
tage
(V)
Max
Out
put C
urre
nt (m
A)Ty
pica
l Lin
e R
egul
atio
n (%
/V)
Typi
cal L
oad
Reg
ulat
ion
(%/m
A)Pa
ckag
es
LR8
1245
01.
2–44
010
0.00
30.
153-
Lead
TO
-252
, 3-L
ead
TO-9
2, 3
-Lea
d SO
T-89
LR12
1210
01.
2–88
500.
003
0.06
3-Le
ad T
O-2
52, 8
-Lea
d SO
IC, 3
-Lea
d TO
-92
Pow
er M
anag
emen
t: D
DR
Ter
min
atio
n R
egul
ator
s
Prod
uct
Iou
tVi
n M
in. (
V)Vi
n M
ax. (
V)Vo
ut (
V)PW
R G
ood
VTT
Accu
racy
Exte
rnal
Tra
nsis
tor
Sync
Buc
kFr
eque
ncy
Feat
ures
Pack
ages
MIC
5166
±3A
0.9
3.6
1/2
of V
inY
±40
mV
––
–In
tegr
ated
FET
s3
× 3
DFN
MIC
5167
±6A
2.6
5.5
Adj.
dow
n to
0.3
5VY
±12
mV
–Y
1 M
HzIn
tegr
ated
Syn
c-Bu
ck4
× 4
DFN
Pow
er M
anag
emen
t: C
harg
e Pu
mp
DC
-to-
DC
Con
vert
ers
Prod
uct
Con
figur
atio
nIn
put V
olta
ge
Ran
ge (V
)O
utpu
t Vol
tage
(V)
Typi
cal O
utpu
t C
urre
nt (m
A)Sw
itchi
ng F
requ
ency
(k
Hz)
Supp
ly C
urre
nt
(Is, fl
oatin
g ou
tput
, μA
, 25°
C)
Out
put R
esis
tanc
e (Ω
, at t
ypic
al o
utpu
t cu
rren
t, 25
°C)
Pow
er C
onve
rsio
n Effi
cien
cy (%
)Fe
atur
esPa
ckag
es
Inve
rtin
g or
Dou
blin
g C
harg
e Pu
mps
TC76
60S/
HIn
verti
ng o
r dou
blin
g1.
5–12
−Vin
or 2
* Vin
2010
, 45,
or 1
2080
or 4
6055
or 6
098
% a
t 1 m
A,
85%
at 1
0 m
ABo
ost p
in in
crea
ses
switc
hing
freq
uenc
y, hi
gh-v
olta
ge o
scilla
tor
8-pi
n SO
IC a
nd
8-pi
n PD
IP
TC76
62A/
BIn
verti
ng o
r dou
blin
g1.
5–15
−Vin
or 2
* Vin
20 o
r 40
10, 1
2 or
35
80 o
r 190
50 o
r 65
96%
at 1
mA,
97
% a
t 7.5
mA
Boos
t pin
incr
ease
s sw
itchi
ng fr
eque
ncy,
no
low
-vol
tage
term
inal
requ
ired
8-pi
n SO
IC a
nd
8-pi
n PD
IP
Reg
ulat
ed C
harg
e Pu
mps
MC
P125
2/3
Regu
lated
2.0–
5.5
3.3,
5.0
, or
Adju
stab
le15
065
0, 1
000
60N/
A81
% a
t 10
mA
Shut
dow
n, p
ower
goo
d, re
gulat
ed o
utpu
t, ad
just
able
vers
ion
8-pi
n M
SOP
www.microchip.com22
Pow
er M
anag
emen
t: Po
wer
MO
SFET
Driv
ers
Prod
uct
Driv
ers
Con
figur
atio
n Pe
ak O
utpu
t C
urre
nt
(sou
rce/
sink
, A)
Max
Sup
ply
Volta
ge (V
)O
utpu
t Res
ista
nce
(sou
rce/
sink
, Ω)
Prop
agat
ion
Del
ay
(Td1/
Td2,
ns)
Ris
e/Fa
ll Ti
me
(Tr,
Tf, n
s)Pa
ckag
es
Low
-Sid
e Po
wer
MO
SFET
Driv
ers
MC
P14A
0051
/2Si
ngle
Inve
rting
/Non
-Inve
rting
0.5/
0.5
186.
5/4.
540
/31
51/3
96-
pin
SOT-
23, 6
-pin
2 x
2 D
FNM
IC44
16/7
Sing
leNo
n-In
verti
ng/In
verti
ng/C
ompl
imen
tary
1.2/
1.2
183.
5/3.
542
/42
3.5/
3.5
SOT-
143
MIC
4467
/8/9
Qua
dIn
verti
ng/N
on-In
verti
ng/C
ompl
imen
tary
1.2/
1.2
185/
535
/55
5/5
16-p
in W
SOIC
, 14-
pin
PDIP
MC
P14A
0151
/2Si
ngle
Inve
rting
/Non
-Inve
rting
1.5/
1.5
1817
/10
41/3
218
.5/1
76-
pin
SOT-
23, 6
-pin
2 x
2 D
FNM
CP1
4A01
53/4
/5Du
alIn
verti
ng/N
on-In
verti
ng/C
ompl
imen
tary
1.5/
1.5
184.
5/3
32/2
411
/10
8-pi
n SO
IC, 8
-pin
MSO
P, 8
-pin
2 x
3 D
FNM
CP1
4E6/
7/8
Dual
Inve
rting
/Non
-Inve
rting
/Com
plim
enta
ry2.
0/2.
018
5/5
45/4
512
/15
8-pi
n SO
IC, 8
-pin
PDI
P, 8
-pin
6 x
5 D
FNM
IC44
78/9
/80
Dual
Non-
Inve
rting
/Inve
rting
/Com
plim
enta
ry2.
5/2.
532
6/3
160/
7012
0/45
8-pi
n SO
IC, 8
-pin
ePA
D SO
ICM
CP1
4E9/
10/1
1Du
alIn
verti
ng/N
on-In
verti
ng/C
ompl
imen
tary
3.0/
3.0
184/
445
/45
14/1
78-
pin
SOIC
, 8-p
in P
DIP,
8-p
in 6
x 5
DFN
MAQ
4123
/4/5
Dual
Inve
rting
/Non
-Inve
rting
/Com
plim
enta
ry3.
0/3.
020
5/5
40/6
011
/11
8-pi
n eP
AD S
OIC
MIC
4123
/4/5
Dual
Inve
rting
/Non
-Inve
rting
/Com
plim
enta
ry3.
0/3.
020
5/5
44/5
911
/11
8-pi
n eP
AD S
OIC
MC
P14E
3/4/
5Du
alIn
verti
ng/N
on-In
verti
ng/C
ompl
imen
tary
4.0/
4.0
182.
5/2.
546
/50
15/1
88-
pin
SOIC
, 8-p
in P
DIP,
8-p
in 6
x 5
DFN
MC
P14A
0451
/2Si
ngle
Non-
Inve
rting
/Inve
rting
4.5/
4.5
181.
6/1.
216
/19.
59/
9.5
8-pi
n M
SOP,
8-p
in S
OIC
8 p
in 2
x 2
WDF
NM
CP1
4A06
01/2
Sing
leNo
n-In
verti
ng/In
verti
ng6.
0/6.
018
1.2/
0.9
22/2
210
/10
8-pi
n M
SOP,
8-p
in S
OIC
8 p
in 2
x 3
WDF
NM
CP1
4A03
1/2
Sing
le No
n-In
verti
ng/In
verti
ng
3.0/
3.0
182.
2/1.
515
/18
18/1
7 8-
pin
MSO
P, 8
-pin
SO
IC, 8
-pin
, 2 x
2 D
FNM
IC41
20/2
9Si
ngle
Non-
Inve
rting
/Inve
rting
6.0/
6.0
205/
545
/50
12/1
38-
pin
ePAD
SO
IC, 8
-pin
3 x
3 M
LFM
IC44
21A/
22A
Sing
leIn
verti
ng/N
on-In
verti
ng9.
0/9.
018
0.8/
0.6
15/3
520
/24
8-pi
n PD
IP, 8
-pin
SO
IC, 5
-pin
TO
-220
MIC
4451
/2Si
ngle
Inve
rting
/Non
-Inve
rting
12.0
/12.
018
0.8/
0.6
25/4
020
/24
8-pi
n SO
IC, 8
-pin
PDI
P, 5
-pin
TO
-220
Hig
h-Si
de P
ower
MO
SFET
Driv
ers
MIC
5011
/13
High
-Sid
e or
Low
-Sid
e Si
ngle
Non-
Inve
rting
950
µA*/2
25 µ
A*32
N/A
N/A
25 µ
s/4
µs8-
pin
SOIC
, 8-p
in P
DIP
MIC
5014
/15
High
-Sid
e or
Low
-Sid
e Si
ngle
Non-
Inve
rting
/Inve
rting
800
µA*
30N/
AN/
A90
µs/
6 µs
8-pi
n SO
IC, 8
-pin
PDI
PM
IC50
18/1
9Hi
gh-S
ide
or L
ow-S
ide
Sing
leNo
n-In
verti
ng10
µA*
9N/
AN/
A75
0 µs
/10
µs4-
pin
SOT-
143
MIC
5021
High
-Sid
e or
Low
-Sid
e Si
ngle
Non-
Inve
rting
5600
µA*
36N/
A50
0/80
040
0 ns
/400
ns
8-pi
n SO
IC, 8
-pin
PDI
PM
IC50
60Hi
gh-S
ide
or L
ow-S
ide
Sing
leNo
n-In
verti
ng80
0 µA
*30
N/A
N/A
90 µ
s/6
µs8-
pin
3 x
3 M
LF
Sync
hron
ous
Driv
ers
MC
P146
28/M
CP1
4700
Half
Brid
ge D
river
Du
al In
puts
2.0/
3.5
5.5
(36V
Boo
t Pin
)1/
1 (0
.5 o
n lo
w s
ide)
15/2
210
/10
8-pi
n SO
IC, 8
-pin
3 ×
3 D
FNM
IC41
00/1
Half
Brid
ge D
river
Du
al In
puts
2.0/
2.0
16 (1
00V
Boot
Pin
)2.
5/2.
027
/27
10/1
08-
pin
SOIC
MIC
4102
Half
Brid
ge D
river
Si
ngle
PWM
3.
0/2.
016
(100
V Bo
ot P
in)
1.5/
2.0
60/7
510
/68-
pin
SOIC
MIC
4103
/4
Half
Brid
ge D
river
Du
al In
puts
3.0/
2.0
16 (1
00V
Boot
Pin
)1.
5/2.
024
/24
10/6
8-pi
n SO
ICM
IC46
00Ha
lf Br
idge
Driv
er
Dual
Inpu
ts, S
ingl
e PW
M1.
0/1.
028
2.0/
1.5
26/5
515
/13.
516
-pin
3 ×
3 Q
FNM
IC46
04
Half
Brid
ge D
river
Du
al In
puts
1.0/
1.0
16 (8
5V B
oot P
in)
4.4/
4.0
33/3
4 20
/20
8-pi
n SO
IC, 1
0-pi
n 2.
5 x
2.5
TDFN
MIC
4605
Half
Brid
ge D
river
Du
al In
puts
, Sin
gle
PWM
1.0/
1.0
16 (8
5V B
oot P
in)
10/6
35/3
520
/20
8-pi
n SO
IC, 1
0-pi
n 2.
5 x
2.5
TDFN
MIC
4606
Full B
ridge
Driv
erDu
al In
puts
, Sin
gle
PWM
1.0/
1.0
16 (8
5V B
oot P
in)
10/6
35/3
520
/20
16-p
in 4
x 4
QFN
MIC
4607
3 Ph
ase
Drive
rDu
al In
puts
, Sin
gle
PWM
1.0/
1.0
16 (8
5V B
oot P
in)
10/6
35/3
520
/20
28-p
in T
SSO
P, 2
8-pi
n 4
x 5
QFN
MIC
4608
Half
Brid
ge D
river
Du
al In
puts
, Sin
gle
PWM
1.0/
1.0
20 (6
00V
Boot
Pin
)8/
9.2
450/
450
31/3
114
-pin
SO
ICM
IC46
093
Phas
e Dr
iver
Dual
Inpu
ts1.
0/1.
020
(600
V Bo
ot P
in)
8/9.
245
0/45
031
/31
28-p
in S
OIC
Pow
er M
anag
emen
t: Po
wer
Sw
itche
s
Part
#D
escr
iptio
nU
SB P
ort P
ower
Sw
itch
(55
mΩ
)H
igh-
Spee
d U
SB
2.0
Switc
hBa
ttery
Cha
rger
Em
ulat
ion
Profi
les
8 R
esis
tor S
et
Cur
rent
Lim
itsC
harg
ing
Indi
cato
r Out
put
Atta
ch D
etec
tion
Out
put
Cur
rent
M
easu
rem
ent
Pow
er
Allo
catio
nIn
terf
ace
Pack
ages
USB
Por
t Pow
er C
ontr
olle
rsU
CS1
001-
3/4
USB
Port
Pow
er C
ontro
ller w
ith C
harg
er E
mul
atio
n1
19
Up to
2.4
A‒3
opt
ion
‒4 o
ptio
n–
–Di
scre
te I/
O20
-pin
4 x
4 Q
FN
UC
S100
2-2
Prog
ram
mab
le US
B Po
rt Po
wer
Con
trolle
r w
ith C
harg
er E
mul
atio
n1
19
+ 1
Prog
ram
mab
leUp
to 2
.4A
Y–
YY
I² C/S
MBu
s20
-pin
4 x
4 Q
FN
UC
S100
3-1
Prog
ram
mab
le US
B Po
rt Po
wer
Con
trolle
r w
ith C
harg
er E
mul
atio
n1
19
+ 1
Prog
ram
mab
leUp
to 3
A–
YY
YI² C
/SM
Bus
20-p
in 4
x 4
QFN
UC
S810
03Pr
ogra
mm
able
USB
Port
Pow
er C
ontro
ller -
Aut
omot
ive1
19
+ 1
Prog
ram
mab
leUp
to 3
A–
YY
YI² C
/SM
Bus
28-p
in 5
x 5
QFN
Focus Product Selector Guide 23
Pow
er M
anag
emen
t: Po
wer
Sw
itche
s
Part
#C
hann
els
Vin R
ange
(V
)Fi
xed
Cur
rent
Lim
it M
in.
Adj.
Cur
rent
Lim
it M
ax.
Rd
s(o
n) (
mΩ
)R
ever
se
Bloc
king
Enab
le L
ogic
UVL
OTh
erm
al
Prot
ectio
nFa
ult
Flag
Cur
rent
M
easu
rem
ent
Pack
ages
Cur
rent
Lim
it U
SB P
rote
ctio
n Sw
itche
s
MIC
200x
/201
xSi
ngle
2.5–
5.5
500
mA,
800
mA,
1.2
AUp
to 2
A70
/100
/170
–Ac
tive
Low,
Act
ive H
igh
YY
–/Y
–5-
pin
SOT2
3, 6
-pin
SO
T23,
2 ×
2M
IC20
25/7
5Si
ngle
2.7–
5.5
500
mA
–90
YAc
tive
Low,
Act
ive H
igh
YY
Y–
8-pi
n SO
IC, 8
-pin
MSO
PM
IC20
33/3
9Si
ngle
2.5–
5.5
475
mA,
517
mA,
760
mA,
950
mA,
1.1
4A2.
5A75
–Ac
tive
Low,
Act
ive H
igh
YY
Y–
6-pi
n SO
T-23
, 2 x
2 T
DFN
MIC
2042
/43
Sing
le0.
8–5.
5–
3.0A
60Y
Activ
e Lo
w, A
ctive
Hig
hY
YY
–8-
pin
SOIC
, 14-
pin
TSSO
PM
IC20
44/4
5Si
ngle
0.8–
5.5
–6.
0A30
YAc
tive
Low,
Act
ive H
igh
YY
Y–
16-p
in T
SSO
PM
IC25
44/4
8Si
ngle
2.7–
5.5
–1.
5A80
YAc
tive
Low,
Act
ive H
igh
–Y
Y–
8-pi
n SO
IC, 8
-pin
MSO
P
MIC
2545
A/49
ASi
ngle
2.7–
5.5
–3.
0A35
YAc
tive
Low,
Act
ive H
igh
–Y
Y–
8-pi
n SO
IC, 8
-pin
PDI
P,
14-p
in T
SSO
PM
IC20
26/7
6Du
al2.
7–5.
550
0 m
A–
90Y
Activ
e Lo
w, A
ctive
Hig
hY
YY
–8-
pin
SOIC
, 8-p
in P
DIP
MIC
2506
Dual
2.7–
7.5
1.0A
–75
YAc
tive
Low,
Act
ive H
igh
–Y
Y–
8-pi
n SO
IC, 8
-pin
PDI
PM
IC25
46/4
7Du
al2.
7–5.
5–
1.5A
80Y
Activ
e Lo
w, A
ctive
Hig
h–
YY
–16
-pin
SO
IC, 1
6-pi
n TS
SOP
UC
S211
3/21
14Du
al2.
9–5.
5–
3.4A
40/1
8Y
Activ
e Lo
w, A
ctive
Hig
hY
YY
Y20
-pin
4 ×
4 Q
FN,
20-p
in 3
x 3
QFN
Pow
er M
anag
emen
t: Po
wer
Sw
itche
s
Part
#C
hann
els
Vin R
ange
(V)
Max
. Sw
itch
Cur
rent
(A)
Rd
s(o
n) (
mΩ
)So
ft St
art (
μs)
Load
Dis
char
ge (Ω
)En
able
Log
icR
ever
se B
lock
ing
Pack
ages
Load
Sw
itche
s
MIC
9404
0/1/
2/3/
4/5
Sing
le1.
7–5.
53.
028
100
(940
42),
900
(940
44/5
)25
0 (9
4041
/3),
200
(940
45)
Activ
e Hi
gh–
1.2
× 1.
2M
IC94
070/
1/2/
3Si
ngle
1.7–
5.5
1.2
120
800
(940
72/3
)20
0 (9
4071
/3)
Activ
e Hi
gh–
6-pi
n SC
70, 1
.2 ×
1.6
*M
IC94
080/
1/2/
3/4/
5Si
ngle
1.7–
5.5
2.0
6780
0 (9
4082
/3),
120
(940
84/5
)25
0 (9
4081
/3/5
)Ac
tive
High
–0.
85 ×
0.8
5M
IC94
161/
2/3/
4/5
Sing
le1.
7–5.
53.
015
.527
00 (9
4161
/4/5
), 60
(941
62/3
)20
0 (9
4162
/4)
Activ
e Hi
ghY
1.5
× 1
WLC
SPM
IC95
410
Sing
le0.
5–5.
57.
06.
611
0023
00Ac
tive
High
–1.
2 ×
2M
IC94
066/
7/8/
9Du
al1.
7–5.
52
8580
0 (9
4068
/9)
200
(940
67/9
)Ac
tive
High
–2
× 2
Pow
er M
anag
emen
t: LD
O S
ingl
e O
utpu
t
Prod
uct
Out
put C
urre
nt
(mA)
Vin M
in.
(V)
Vin M
ax.
(V)
Vou
t (V)
Volta
ge D
rop
Typ.
(mV)
IGN
D T
yp.
(µA)
Out
put
Accu
racy
(%)
PSR
R
1 kH
z (d
B)Fe
atur
es
Pack
ages
MIC
5280
/1/2
/325
/50/
100/
150
4.5
120
3.3,
5.0
, Adj
.11
0031
µA/
6 µA
±2/±
380
/90
High
Inpu
t Vol
tage
, Loa
d Du
mp,
Rev
erse
Bat
tery
Pr
otec
tion
8-pi
n SO
IC
MC
P179
0/1
706
303.
0, 3
.3, 5
.070
070
µA
±0.2
90Hi
gh In
put
3-pin
SOT
-223
, 3-p
in DD
PAK,
5-p
in DD
PAK,
5-p
in SO
T-22
3
MIC
5233
100
2.3
361.
8, 2
.5, 3
.0, 3
.3, 5
.0, A
dj27
018
µA
±150
High
Inpu
t Vol
tage
, Rev
erse
Bat
tery
and
Cur
rent
Pr
otec
tion
3-pi
n SO
T-22
3, 5
-pin
SO
T-23
MC
P181
015
02.
55.
51.
2, 1
.8, 2
.5, 3
.0, 3
.3, 4
.238
00.
02 u
A±1
40Ul
tra L
ow Q
uies
cent
Cur
rent
2x2
DFN
MIC
5365
150
2.5
5.5
1.0,
1.2
, 1.3
, 1.5
, 1.8
, 2.0
, 2.5
, 2.6
, 2.
7, 2
.8, 2
.85,
2.9
, 3.0
, 3.3
155
32 µ
A±2
80Hi
gh P
SRR
5-pi
n SC
70, 5
-pin
TSO
T, 4
-pin
UDF
N
MC
P171
115
01.
46
1.2–
5.0
500
0.6
µA±1
20Ul
tra L
ow Iq
, Cap
less
4-pi
n UQ
FN, 5
-pin
SO
T-23
MC
P170
3A25
02.
716
1.2–
5.5
625
2 µA
±0.4
35Hi
gh In
put,
Low
Iq3-
pin S
OT-8
9, 3
-pin
SOT-
23A,
3-p
in SO
T-22
3, 8
-pin
DFN
MIC
5501
/2/3
/430
02.
55.
51.
2, 1
.8, 2
.8, 3
.0, 3
.316
038
µA
±260
Low
Dro
pout
4-pi
n UD
FN, 5
-pin
SO
T-23
MIC
5239
500
2.3
301.
5, 1
.8, 2
.5, 3
.0, 3
.3, 5
.0, A
dj35
023
µA
±150
Reve
rse
Batte
ry a
nd C
urre
nt P
rote
ctio
n8-
pin
MSO
P, 8
-pin
SO
IC, 3
-pin
SO
T-22
3M
IC55
2450
02.
55.
51.
2, 1
.8, 2
.8,3
.0, 3
.326
038
µA
±265
Low
Noi
se4-
pin
UDFN
MIC
3910
010
002.
2516
1.8,
2.5
, 3.3
, 5.0
410
6.5
mA
±155
Reve
rse
Batte
ry a
nd C
urre
nt P
rote
ctio
n3-
pin
SOT-
223
MIC
2915
115
002.
2526
3.3,
5.0
, 12
350
22 m
A±1
Load
Dum
p, R
ever
se C
urre
nt P
rote
ctio
n5-
pin
TO-2
20, 5
-pin
DDP
AKM
IC29
301
3000
2.25
263.
3, 5
.0, 1
237
037
mA
±1–
Load
Dum
p, R
ever
se C
urre
nt P
rote
ctio
n5-
pin
TO-2
20, 5
-pin
DDP
AKM
IC29
751
7500
2.5
263.
3, 5
.042
512
0 m
A±1
–Lo
ad D
ump,
Rev
erse
Cur
rent
Pro
tect
ion
5-pi
n TO
-247
www.microchip.com24
Dis
play
and
LED
Driv
ers:
Ele
ctro
lum
ines
cent
Bac
klig
ht D
river
s
Part
#Ty
peIn
put V
olta
ge M
in. (
V)In
put V
olta
ge M
ax. (
V)N
omin
al O
utpu
t Vo
ltage
(V)
Max
. Sw
itch
Res
ista
nce
(Ω)
Out
put R
egul
atio
nM
ax. L
amp
Size
Pe
r Dev
ice
(in2)
Pack
ages
16-S
egm
ent D
river
s
HV5
0916
-Seg
men
t Driv
ers
25.
5±5
0 to
±20
0–
–6.
532
-pin
VQ
FN
Sing
le L
amp
Driv
ers
HV8
33Si
ngle
Lam
p Dr
iver
1.8
6.5
±90
4Y
128-
pin
MSO
PH
V852
Sing
le In
duct
orles
s La
mp
Drive
r2.
45
±80
–Y
1.5
10-p
in W
DFN,
8-p
in M
SOP
HV8
59Si
ngle
Lam
p Dr
iver
1.8
5±1
056
Y5
8-pi
n W
DFN,
8-p
in M
SOP
Dua
l Lam
p D
river
s
HV8
61Du
al La
mp
Drive
rs2.
54.
5±9
07
Y5
16-p
in W
QFN
Dis
play
and
LED
Driv
ers:
LED
Driv
ers
Part
#To
polo
gyIn
put V
olta
ge (V
)D
imm
ing
Iq T
yp. (
mA)
Switc
hing
Fre
quen
cy (H
z)Sw
itchi
ng M
OSF
ETD
ither
edIL
ED A
ccur
acy
Vfb
(V)
Pack
ages
Gen
eral
Pur
pose
LED
Driv
ers
HV9
801A
Buck
15–4
504-
Leve
l Sw
itch
1.0
100k
Exte
rnal
FET
–N/
A0.
2516
-pin
SO
IC 1
50 m
il, 8-
pin
SOIC
150
mil
HV9
803B
Buck
7–13
.2PW
M/L
inea
r1.
510
0kEx
tern
al FE
T–
±2%
0.28
8-pi
n SO
IC 1
50 m
ilH
V980
52-
Stag
e10
2–26
5–
2.5
370k
0.7A
FET
–N/
A1.
2510
-pin
MSO
PH
V981
00/H
V981
01Bu
ck -
Boos
t9.
5-17
.5–
0.2
320k
Exte
rnal
FET
–±5
%0.
26-
pin
SOT2
3H
V991
0B/H
V991
0CBu
ck8–
450/
15–4
50PW
M/L
inea
r1.
010
0kEx
tern
al FE
T–
±5%
0.25
16-p
in S
OIC
150
mil,
8-pi
n SO
IC 1
50 m
ilH
V991
8/H
V991
9BBu
ck4.
5–40
PWM
1.5
2M0.
7A F
ET/E
xt. F
ET–
±5%
0.23
8-pi
n W
DFN
HV9
930
Ćuk
8–20
0PW
M1.
0Va
riabl
eEx
tern
al FE
T–
N/A
0.12
8-pi
n SO
IC 1
50 m
ilH
V996
1/H
V986
1ABu
ck8-
450/
15–4
50PW
M/L
inea
r1.
510
0kEx
tern
al FE
T–
±3%
0.27
16-p
in S
OIC
150
mil,
8-pi
n SO
IC 1
50 m
ilM
IC32
02Bu
ck6–
37PW
M1.
2Hy
st to
1.0
M1A
FET
Y±5
%2
8-pi
n SO
ICM
IC32
30/1
/2Bo
ost
6–45
PWM
3.2
Prog
ram
mab
leEx
tern
al FE
TO
ptio
nal
±3%
0.25
10-p
in M
SOP,
12-
pin
VDFN
, 16-
pin
TSSO
P EP
HV9
6001
8–60
Exte
rnal
FET
Extra
Wid
e Ra
nge
PWM
and
Ana
log
Yes
16/S
OIC
, 16/
QFN
Dis
play
and
LED
Driv
ers:
LED
Driv
ers
Part
#Vi
n (V
)Vo
ut (
V)O
uput
Cur
rent
(mA)
Dim
min
gPa
ralle
labl
eFe
atur
esPa
ckag
es
Line
ar R
egul
ator
s
CL2
5.0–
905.
0–90
20Ex
tern
al FE
TYe
s–
TO-2
52-3
, TO
-92-
3, S
OT-
89-3
CL2
20Bu
ck5.
0–22
020
Exte
rnal
FET
Yes
–TO
-252
-3, T
O-2
20-3
CL3
206.
5–90
4.0–
9020
PWM
Yes
OTP
, Sep
arat
e EN
ABLE
Pin
SOIC
-8 w
ith H
eat S
lug
Dis
play
and
LED
Driv
ers:
LED
Driv
ers
Part
#Vi
n (V
)#
of W
hite
LED
sD
imm
ing
Iq (m
A)Vd
ro
pou
tled
@ 2
0 m
AIL
ED M
atch
ing
Ext L
DO
sVd
ro
pou
tIQ
LDO
Com
men
tsPa
ckag
es
Line
ar L
ED D
river
s
MIC
2860
-2D
3-5.
52
@ 3
0.2
mA
1-W
ire, 3
2-St
eps
0.7
52 m
V±0
.5%
––
–6-
pin
SC70
, 6-p
in S
OT-
23M
IC28
60-2
P Bu
ck2
@ 3
0.2
mA
PWM
dow
n to
250
Hz
0.7
52 m
V±0
.5%
––
–6-
pin
SC70
, 6-p
in S
OT-
23M
IC48
113-
5.5
6 @
50
mA
PWM
(200
Hz–
500
kHz)
1.7
100
mV
@ 5
0 m
A±1
.0%
––
–DA
M10
-pin
MSO
PM
IC48
123-
5.5
6 @
100
mA
PWM
(200
Hz–
500
kHz)
3.2
190
mV
@ 1
00 m
A±1
.0%
––
–DA
M10
-pin
eM
SOP
Dis
play
and
LED
Driv
ers:
LED
Driv
ers
Part
#Vi
n (V
AC)
Vou
t (V)
Oup
ut C
urre
nt (P
eak
mA)
Dim
min
gPa
ralle
labl
eFe
atur
esPa
ckag
es
Sequ
entia
l LED
Driv
ers
CL8
800
90–2
7570
–350
115
Exte
rnal
Dim
mer
Yes
6-St
age
QFN
-33
CL8
801
90–2
7570
–350
200
Exte
rnal
Dim
mer
Yes
4-St
age
QFN
-33
CL8
8020
90–1
3570
–190
115
Exte
rnal
Dim
mer
Yes
4-Ta
pSO
IC-8
EP
CL8
8030
90–3
20Ex
tern
al Di
mm
erYe
s4-
Tap,
ALR
, OTP
, Iou
t FET
Dep
ende
nt10
-Ld
DFN
CL8
8031
90–3
20Ex
tern
al Di
mm
erYe
s6-
Tap,
ALR
, OTP
, Io
FET
Depe
nden
t10
-Ld
DFN
Focus Product Selector Guide 25
Hig
h-Vo
ltage
Inte
rfac
e: D
river
Arr
ays
Part
#O
utpu
t Cha
nnel
sVo
ut O
pera
ting
(V) -
Tra
nsie
ntVo
ut O
pera
ting
(V) -
Sus
tain
edIn
put S
truc
ture
Out
put S
truc
ture
Iou
t per
Cha
nnel
(mA)
Min
. Dat
a C
lock
(MH
z)Pa
ckag
es
Sour
ce
HV5
7009
6495
85Se
rial
P-Ch
Ope
n Dr
ain−2
(Pro
gram
mab
le)16
80-p
in P
QFP
MIC
2981
/82
850
50Pa
ralle
lDa
rlingt
on O
pen
Emitt
er−5
00–
18-p
in P
DIP,
18-
pin
SOIC
300
mil
Sink
HV5
222
3225
022
5Se
rial
N-Ch
Ope
n Dr
ain10
08
44-p
in C
ERQ
UAD,
44-
pin
PLCC
, 44-
pin
PQFP
HV5
630
3231
530
0Se
rial
N-Ch
Ope
n Dr
ain10
08
44-p
in P
LCC
MIC
58P0
18
8080
Para
llel
Darlin
gton
Ope
n Co
llect
or40
0–
24-p
in S
OIC
300
mil,
28-p
in P
LCC
Sour
ce-S
ink
HV5
0764
320
300
Seria
lHa
lf-Br
idge
±1.0
8
80-p
in P
QFP
HV5
082
6045
Para
llel
Half-
Brid
ge−2
.8, +
0.38
–8-
pin
SOIC
150
mil
HV5
138
275
250
Seria
lHa
lf-Br
idge
±20
824
-pin
SO
IC 3
00 m
il, 32
-pin
WQ
FNH
V579
0864
9080
Seria
lHa
lf-Br
idge
−1.2
58
80-p
in P
QFP
HV5
8296
8580
Seria
lHa
lf-Br
idge
± 75
3016
9-pi
n TF
BGA
HV5
8312
890
80Se
rial
Half-
Brid
ge±3
040
169-
pin
TFBG
AH
V681
010
9080
Seria
lHa
lf-Br
idge
−250
520
-pin
SO
IC 3
00 m
ilH
V722
440
260
240
Seria
lHa
lf-Br
idge
±70
364
-pin
PQ
FPH
V762
032
225
200
Seria
lHa
lf-Br
idge
±50
1064
-pin
PQ
FP
Hig
h-Vo
ltage
Inte
rfac
e: A
mpl
ifier
s an
d M
EMS
Driv
ers
Part
#O
utpu
t Cha
nnel
sSl
ew R
ate
(V/µ
s)C
lose
d Lo
op G
ain
(V/V
)Fe
edba
ck R
esis
tanc
e (M
Ω)
Sour
ce C
urre
nt M
ax. (
µA)
Sink
Cur
rent
Max
. (µA
)O
utpu
t Cap
aciti
ve L
oad
Max
. (pF
)Pa
ckag
es
HV2
5632
272
1271
571
530
0010
0-pi
n M
QFP
HV2
644
966
.75.
330
0030
0015
24-p
in T
SSO
PH
V265
40.
0282
4.9
3000
3000
200
TSSO
P-24
HV5
6020
0.2
751.
996
000
1670
00N/
AO
CP F
lag to
Hos
t Micr
o43
-Ld.
7m
mx7
mm
VQ
FNH
V560
220.
275
1.9
9600
016
7000
N/A
OCP
Flag
to H
ost M
icro
20-L
d. 4
mm
x 4
mm
VQ
FN
Hig
h-Vo
ltage
Inte
rfac
e: M
OSF
ETs
- Int
erfa
ce
Part
#BV
dsx
Min
. (V)
Rd
s (o
n) M
ax. (
Ω)
Vgs
(off
) Min
. (V)
Vgs
(off
) Max
. (V)
Pack
ages
Dep
letio
n-M
ode
N-C
hann
el
LND
019
1.4
−0.8
−35-
pin
SOT-
23D
N15
0990
6−1
.8−3
.53-
pin
SOT-
89, 5
-pin
SO
T-23
DN
2625
250
3.5
−1.5
−2.1
8-pi
n VD
FN, 3
-pin
DPA
KD
N25
3030
012
−1−3
.53-
pin
TO-9
2, 3
-pin
SO
T-89
DN
2450
500
10−1
.5−3
.53-
pin
DPAK
, 3-p
in S
OT-
89LN
D15
050
010
00−1
−33-
pin
TO-9
2, 3
-pin
SO
T-89
, 3-p
in S
OT-
23D
N24
7070
042
−1.5
−3.5
3-pi
n DP
AK
Hig
h-Vo
ltage
Inte
rfac
e: M
OSF
ETS
Inte
rfac
e
Part
#BV
dss
Min
. (V)
Rd
s (o
n) M
ax. (
Ω)
Cis
s M
ax. (
pF)
Vgs
(th) M
ax. (
V)Pa
ckag
es
Enha
ncem
ent-
Mod
e N
-Cha
nnel
TN07
0220
1.3
200
1.0
3-pi
n TO
-92
TN01
0440
2.0
701.
63-
pin
TO-9
2, 3
-pin
SO
T-89
VN08
0880
4.0
502.
03-
pin
TO-9
2VN
2210
100
0.4
500
2.4
3-pi
n TO
-92,
3-p
in T
O-3
9TN
0620
200
6.0
150
1.6
3-pi
n TO
-92
TN26
4040
05.
022
52.
03-
pin
DPAK
, 3-p
in T
O-9
2, 8
-pin
SO
IC 1
50 m
ilVN
2450
500
13.0
150
4.0
3-pi
n TO
-92,
3-p
in S
OT-
89VN
2460
600
20.0
150
4.0
3-pi
n TO
-92,
3-p
in S
OT-
89
www.microchip.com26
Hig
h-Vo
ltage
Inte
rfac
e: M
OSF
ETS
Inte
rfac
e
Part
#BV
dss
Min
. (V)
Rd
s (o
n) M
ax. (
Ω)
Cis
s M
ax. (
pF)
Vgs
(th) M
ax. (
V)Pa
ckag
es
Enha
ncem
ent-
Mod
e P-
Cha
nnel
TP25
02−2
02.
012
5−2
.43-
pin
SOT-
89TP
0604
−40
2.0
150
−2.4
3-pi
n TO
-92
VP08
08−8
05.
015
0−4
.53-
pin
TO-9
2TP
2510
−100
3.5
125
−2.4
3-pi
n SO
T-89
TP25
20−2
0012
.012
5−2
.03-
pin
SOT-
89TP
2640
−400
15.0
300
−2.0
3-pi
n TO
-92,
8-p
in S
OIC
150
mil
VP24
50−5
0030
.019
0−3
.53-
pin
TO-9
2, 3
-pin
SO
T-89
Hig
h-Vo
ltage
Inte
rfac
e: M
OSF
ETs
Inte
rfac
e
Part
#BV
dss
N-C
hann
el (V
)BV
dss
P-C
hann
el (V
)R
ds(
on) N
-Cha
nnel
Max
. (Ω
)R
ds(
on) P
-Cha
nnel
Max
. (Ω
)Vg
s(th
) Max
. (V)
Det
ails
Pack
ages
Com
plim
enta
ry (E
nhan
cem
ent M
ode
MO
SFET
Arr
ays)
TC63
2020
0–2
007.
08.
02.
0N-
and
P-C
hann
el Pa
ir8-
pin
SOIC
, 8-p
in V
DFN
TC63
2120
0–2
007.
08.
02.
0N-
and
P-C
hann
el Pa
ir8-
pin
SOIC
, 8-p
in V
DFN
TC82
2020
0–2
005.
36.
52.
02
N- a
nd P
-Cha
nnel
Pairs
12-p
in V
DFN
Hig
h-Vo
ltage
Inte
rfac
e: A
pplic
atio
n Sp
ecifi
c
Part
#D
C/D
CIn
put V
olta
ge M
in. (
V)In
put V
olta
ge M
ax. (
V)O
utpu
t Vol
tage
Min
. (Vr
ms)
Out
put V
olta
ge M
ax. (
Vrm
s)Lo
ad M
in. (
pF)
Load
Max
. (pF
)Pa
ckag
es
Liqu
id L
ens
Driv
er
HV8
92In
tern
al Ch
arge
Pum
p2.
655.
510
6010
020
010
-pin
WDF
N
Hig
h-Vo
ltage
Inte
rfac
e: A
pplic
atio
n Sp
ecifi
c
Part
##
of C
hann
els
Inpu
t Vol
tage
Min
. (V)
Inpu
t Vol
tage
Max
. (V)
Out
put V
olta
ge M
in. (
V)O
utpu
t Vol
tage
Max
. (V)
Inpu
t to
Out
put I
sola
tion
(V)
Pack
ages
Com
plim
enta
ry M
OSF
ET L
EVEL
Tra
nsla
tor D
river
HT0
440
23.
155.
56
10±4
0010
-pin
VDF
N, 8
-pin
SO
IC 1
50 m
ilH
T074
01
3.15
5.5
4.5
8.5
±400
8-pi
n SO
IC 1
50 m
il
Hig
h-Vo
ltage
Inte
rfac
e: A
pplic
atio
n Sp
ecifi
c
Part
#Vi
n (V
)G
ain
Ris
e an
d Fa
ll Ti
me
(µs)
Vsen
se M
ax. (
mV)
Qui
esce
nt C
urre
nt M
ax. (
µA)
Pack
ages
Hig
h-Si
de C
urre
nt M
onito
r
HV7
800
8.0–
450
Fixe
d, 1
0.7–
2.0
500
505-
pin
SOT-
23H
V780
18.
0–45
0Fi
xed,
50.
7–2.
050
050
5-pi
n SO
T-23
HV7
802
8.0–
450
Adju
stab
le0.
7–1.
450
050
8-pi
n M
SOP
Hig
h-Vo
ltage
Inte
rfac
e: A
pplic
atio
n Sp
ecifi
c
Part
#Vi
n M
in.
(V)
Vin M
ax.
(V)
Iin M
ax.
(mA)
Osc
illat
or F
requ
ency
M
in. (
kHz)
Osc
illat
or F
requ
ency
M
ax. (
kHz)
Osc
illat
or F
requ
ency
Fs
ync M
ax. (
kHz)
Max
. Out
put
Dut
y C
ycle
(%)
Typi
cal C
urre
nt
Sens
e Pu
ll-In
(V)
Typi
cal C
urre
nt
Sens
e H
old
Exte
rnal
Adj
usta
ble
Reg
ulat
or
Out
put V
olta
ge (V
)Ex
tern
al A
djus
tabl
e R
egul
ator
O
utpu
t Cur
rent
(mA)
Pack
ages
Rel
ay D
river
and
Con
trol
ler
HV9
901
1045
02
2014
015
099
.50.
883
Adju
stab
le2.
0–5.
50–
1.0
14-p
in S
OIC
Focus Product Selector Guide 27
Line
ar: O
p Am
ps
Prod
uct
# Pe
r Pa
ckag
e G
BWP
(MH
z)Iq
Typ
ical
(μ
A)
Vos
Max
(m
V)
Ope
ratin
g Vo
ltage
(V)
Pack
ages
Pr
oduc
t #
Per
Pack
age
GBW
P (M
Hz)
Iq T
ypic
al
(μA)
Vo
s M
ax
(mV)
O
pera
ting
Volta
ge (V
) Pa
ckag
es
MC
P661
/2/3
/4/5
/91/
2/1/
4/2/
460
6000
82.
5 to
5.5
SOIC
, MSO
P, D
FN, T
SSO
P, Q
FN, S
OT
MC
P6V0
1/2/
31/
2/1
1.3
300
0.00
21.
8 to
5.5
SOIC
, DFN
, TDF
NM
CP6
51/1
S/2/
3/4/
5/9
1/1/
2/1/
4/2/
450
6000
0.
2 2.
5 to
5.5
SO
IC, M
SOP,
DFN
, TSS
OP,
QFN
, SO
T M
CP6
V06/
7/8
1/2/
11.
330
00.
003
1.8
to 5
.5SO
IC, D
FN, T
DFN
MC
P631
/2/3
/4/5
/91/
2/1/
4/2/
424
2500
82.
5 to
5.5
SOIC
, MSO
P, D
FN, T
SSO
P, Q
FN, S
OT
MC
P607
1/2/
41/
2/4
1.2
110
0.15
1.8
to 6
.0
SOIC
, TSS
OP,
DFN
, SO
TM
CP6
21/1
S/2/
3/4/
5/9
1/1/
2/1/
4/2/
420
2500
0.2
2.5
to 5
.5SO
IC, M
SOP,
DFN
, TSS
OP,
QFN
, SO
TM
CP6
H01
/2/4
1/2/
41.
213
54.
53.
5 to
16
SOIC
, TSS
OP,
TDF
N, S
OT,
SC7
0M
CP6
H91
/2/4
1/2/
410
2000
43.
5 to
12.
0DF
N, S
OIC
, TSS
OP
MC
P600
1/2/
41/
2/4
110
0 4.
51.
8 to
6.0
PD
IP, S
OIC
, MSO
P, T
SSO
P, T
DFN,
SO
T, S
C70
MC
P6V9
1/2/
41/
2/4
1011
000.
009
2.4
to 5
.5TS
SOP,
MSO
P, T
DFN,
SO
T, S
C70
MC
P640
1/2/
41/
2/4
145
4.5
1.8
to 6
.0SO
IC, T
SSO
P, T
DFN,
SO
T, S
C70
MC
P602
1/2/
3/4
1/2/
1/4
1010
000.
52.
5 to
5.5
PDIP,
SO
IC, M
SOP,
TSS
OP,
SO
TM
CP6
V61/
2/4
1/2/
41
800.
008
1.8
to 5
.5TS
SOP,
MSO
P, T
DFN,
SO
T, S
C70
MC
P629
1/2/
3/4/
5 1/
2/1/
4/2
1010
00
32.
4 to
6.0
PDIP,
SO
IC, M
SOP,
TSS
OP,
SO
TM
CP6
061/
2/4
1/2/
40.
7360
0.15
1.8
to 6
.0
SOIC
, TSS
OP,
DFN
, SO
TM
CP6
491/
2/4
1/2/
47.
553
0 1.
5 2.
4 to
5.5
SOT,
SC7
0, M
SOP,
TDF
N, S
OIC
, TSS
OP
MC
P624
1/2/
4 1/
2/4
0.55
50
5 1.
8 to
5.5
PD
IP, S
OIC
, MSO
P, T
SSO
P, T
DFN,
SO
T, S
C70
MC
P6H
81/2
/41/
2/4
5.5
700
43.
5 to
12.
0DF
N, S
OIC
, TSS
OP
MC
P605
1/2/
4 1/
2/4
0.38
530
0.
15
1.8
to 6
.0
SOIC
, TSS
OP,
DFN
, SO
TM
CP6
V81/
2/4
1/2/
45
500
0.00
92.
2 to
5.5
TSSO
P, M
SOP,
TDF
N, S
OT,
SC7
0M
CP6
V31/
2/4
1/2/
40.
323
0.00
81.
8 to
5.5
TSSO
P, M
SOP,
TDF
N, S
OT,
SC7
0M
CP6
281/
2/3/
4/5
1/2/
1/4/
25
445
32.
2 to
6.0
PDIP,
SO
IC, M
SOP,
TSS
OP,
SO
TM
CP6
231/
2/4
1/2/
40.
320
5
1.
8 to
6.0
PD
IP, S
OIC
, MSO
P, T
SSO
P, T
DFN,
SO
T, S
C70
MC
P648
1/2/
41/
2/4
424
0 1
.52.
2 to
5.5
SOT,
SC7
0, M
SOP,
TDF
N, S
OIC
, TSS
OP
MC
P616
/7/8
/9
1/2/
1/4
0.19
19
0.15
2.
3 to
5.5
PD
IP, S
OIC
, MSO
P, T
SSO
PM
CP6
286
13.
554
01.
52.
2 to
5.5
SOT
MC
P606
/7/8
/91/
2/1/
40.
155
19
0.25
2.
5 to
6.0
PD
IP, S
OIC
, TSS
OP,
SO
TM
CP6
01/2
/3/4
1/
2/1/
42.
823
0 2
2.7
to 6
.0PD
IP, S
OIC
, TSS
OP,
SO
TM
CP6
141/
2/3/
4 1/
2/1/
40.
10.
6 3
1.4
to 6
.0
PDIP,
SO
IC, M
SOP,
TSS
OP,
SO
TM
CP6
H71
/2/4
1/2/
42.
748
0 4
3.5
to 1
2.0
DFN,
SO
IC, T
SSO
PM
CP6
421/
2/4
1/2/
40.
094.
41
1.8
to 5
.5SO
T, S
C70,
MSO
P, S
OIC
, TSS
OP
MC
P627
1/2/
3/4/
51/
2/1/
4/2
217
03
2.0
to 6
.0PD
IP, S
OIC
, MSO
P, T
SSO
P, S
OT
MC
P6V1
1/2/
41/
2/4
0.08
7.5
0.00
81.
6 to
5.5
TSSO
P, M
SOP,
TDF
N, S
OT,
SC7
0M
CP6
471/
2/4
1/2/
42
100
1.5
2 to
5.5
SOT,
SC7
0, M
SOP,
TDF
N, S
OIC
, TSS
OP
MC
P604
1/2/
3/4
1/2/
1/4
0.01
40.
6 3
1.4
to 6
.0
PDIP,
SO
IC, M
SOP,
TSS
OP,
SO
TM
CP6
V26/
7/8
1/2/
12
620
0.00
22.
3 to
5.5
SOIC
, MSO
P, D
FNM
CP6
031/
2/3/
4 1/
2/1/
40.
010.
9 0.
15
1.8
to 5
.5
SOIC
, MSO
P, T
SSO
P, D
FN, S
OT
MC
P6V7
1/2/
41/
2/4
217
00.
008
2.0
to 5
.5TS
SOP,
MSO
P, T
DFN,
SO
T, S
C70
MC
P644
1/2/
41/
2/4
0.00
90.
454.
51.
4 to
6.0
SOIC
, MSO
P, T
SSO
P, S
OT,
SC7
0M
CP6
V51
12
470
0.01
54.
5 to
45
SOT,
MSO
P Line
ar: I
nstr
umen
tatio
n Am
ps
Prod
uct
Band
wid
th (k
Hz)
Iq T
ypic
al (µ
A)Vo
s M
ax (µ
V)O
pera
ting
Volta
ge (V
)Fe
atur
es
Pack
ages
MC
P6N
1150
080
035
01.
8 to
5.5
Rail-
to-ra
il inp
ut/o
utpu
t, en
able
pin,
mCa
l tec
hnol
ogy
SOIC
, TDF
NM
CP6
N16
500
1100
171.
8 to
5.5
Rail-
to-ra
il inp
ut/o
utpu
t, en
able
pin,
enh
ance
d EM
I reje
ctio
nM
SOP,
DFN
Line
ar: C
urre
nt S
ense
Am
plifi
ers
Part
##
per
Pack
age
Inpu
t Com
mon
-M
ode
Ran
ge (V
)Vo
s M
ax (u
V)Vo
s D
rift M
ax (n
V/°C
)M
ax G
ain
Erro
r (%
)Ba
ndw
idth
(kH
z)Iq
Max
(m
A)O
pera
ting
Volta
ge (V
)Te
mpe
ratu
re
Ran
ge (°
C)
Feat
ures
Pack
ages
MC
P6C
021
3 to
65
16 (G
=20)
, 14
(G=5
0), 1
2 (G
=100
)85
(G=2
0), 7
0 (G
=50)
, 65,
(G
=100
)1.
650
0 (G
=20)
, 500
(G=5
0),
350
(G=1
00)
0.75
2 to
5.5
-40
to +
125
Bidi
rect
iona
l Cur
rent
Sen
se A
mpl
ifier,
Enha
nced
EM
I Reje
ctio
n6-
pin
SOT-
23
MC
P6C
041
3 to
52
30 (G
=20)
, 27
(G=5
0), 2
4 (G
=100
)18
0 (G
=20)
, 140
(G=5
0),
130
(G=1
00)
1.6
500
(G=2
0), 5
00 (G
=50)
, 35
0 (G
=100
)0.
842
to 5
.5-4
0 to
+12
5Bi
dire
ctio
nal C
urre
nt S
ense
Am
plifie
r, En
hanc
ed E
MI R
eject
ion
6-pi
n SO
T-23
Mix
ed S
igna
l: Su
cces
sive
App
roxi
mat
ion
Reg
iste
r (SA
R) A
nalo
g-to
-Dig
ital C
onve
rter
s
Prod
uct
Res
olut
ion
(bits
)M
axim
um S
ampl
ing
Rat
e (s
ampl
es/s
ec)
# of
Inpu
t Cha
nnel
sIn
put T
ype
Inte
rfac
eM
ax. S
uppl
y C
urre
nt (μ
A)Te
mpe
ratu
re R
ange
(°C
)Pa
ckag
es
MC
P302
1/32
2110
/12
22k
1Si
ngle-
ende
d I² C
250
−40
to +
125
SOT-
23A
MC
P300
1/2/
4/8
10
200k
1/2/
4/8
Sing
le-en
ded
SPI
500–
550
−40
to +
85
PDIP,
SO
IC, M
SOP,
TSS
OP
MC
P320
1/2/
4/8
12
100k
1/2/
4/8
Sing
le-en
ded
SPI
400–
550
−40
to +
85
PDIP,
SO
IC, M
SOP,
TSS
OP
MC
P330
1/2/
413
10
0k1/
2/4
Diffe
rent
ialSP
I 45
0 −4
0 to
+85
PD
IP, S
OIC
, MSO
P, T
SSO
PM
CP3
3111
D12
1M1
Diffe
rent
ialSP
I22
50−4
0 to
+85
10-p
in M
SOP,
10-
pin
TDFN
MC
P331
21D
141M
1Di
ffere
ntial
SPI
2250
−40
to +
8510
-pin
MSO
P, 1
0-pi
n TD
FNM
CP3
3131
D16
1M1
Diffe
rent
ialSP
I22
50−4
0 to
+85
10-p
in M
SOP,
10-
pin
TDFN
www.microchip.com28
Mix
ed S
igna
l: D
igita
l-to-
Anal
og C
onve
rter
s
Prod
uct
Res
olut
ion
(Bits
) D
AC
Cha
nnel
sM
emor
yD
NL
(±LS
b)
INL
(±LS
b)Pa
ckag
es
Prod
uct
Res
olut
ion
(Bits
) D
AC
Cha
nnel
sM
emor
yD
NL
(±LS
b)
INL
(±LS
b)Pa
ckag
es
MC
P48F
EB01
/11/
218/
10/1
21
EEPR
OM
0.25
/0.5
/10.
5/1.
5/6
MSO
P-8
MC
P47D
A16
1Vo
latile
0.35
0.7
SOT2
3-6,
SC7
0-6
MC
P48F
EB02
/12/
228/
10/1
22
EEPR
OM
0.25
/0.5
/10.
5/1.
5/6
MSO
P-8
MC
P470
6/16
/26
8/10
/12
1EE
PRO
M0.
05/0
.188
/0.7
50.
907/
3.62
5/14
.5SO
T23-
6, 2
× 2
DFN
-6M
CP4
8FVB
01/1
1/21
8/10
/12
1Vo
latile
0.25
/0.5
/10.
5/1.
5/6
MSO
P-8
MC
P472
512
1EE
PRO
M0.
7514
.5SO
T23-
6M
CP4
8FVB
02/1
2/22
8/10
/12
2Vo
latile
0.25
/0.5
/10.
5/1.
5/6
MSO
P-8
MC
P472
812
4EE
PRO
M0.
7513
MSO
P-10
MC
P47F
EB01
/11/
218/
10/1
21
EEPR
OM
0.25
/0.5
/10.
5/1.
5/6
MSO
P-8
MC
P480
1/11
/21
8/10
/12
1Vo
latile
0.5/
0.5/
0.75
1/3.
5/12
MSO
P-8,
2 ×
3 D
FN-8
, SO
IC-8
, PDI
P-8
MC
P47F
EB02
/12/
228/
10/1
22
EEPR
OM
0.25
/0.5
/10.
5/1.
5/6
MSO
P-8
MC
P480
2/12
/22
8/10
/12
2Vo
latile
0.5/
0.5/
0.75
1/3.
5/12
MSO
P-8,
2 ×
3 D
FN-8
, SO
IC-8
, PDI
P-8
MC
P47F
VB01
/11/
218/
10/1
21
Volat
ile0.
25/0
.5/1
0.5/
1.5/
6M
SOP-
8M
CP4
901/
11/2
18/
10/1
21
Volat
ile0.
5/0.
5/0.
751/
3.5/
12M
SOP-
8, 2
× 3
DFN
-8, S
OIC
-8, P
DIP-
8M
CP4
7FVB
02/1
2/22
8/10
/12
2Vo
latile
0.25
/0.5
/10.
5/1.
5/6
MSO
P-8
MC
P490
2/12
/22
8/10
/12
2Vo
latile
0.5/
0.5/
0.75
1/3.
5/12
MSO
P-8,
2 ×
3 D
FN-8
, SO
IC-8
, PDI
P-8
MC
P47C
VB01
/11/
218/
10/1
21
Volat
ile0.
1/0.
25/1
0.1/
0.25
/110
-pin
MSO
P, 1
6-pi
n Q
FN, 1
0-pi
n DF
NM
CP4
8CVB
01/1
1/21
8/10
/12
1Vo
latile
0.1/
0.25
/10.
1/0.
25/1
10-p
in M
SOP,
16-
pin
QFN
, 10-
pin
DFN
MC
P47C
VB02
/12/
228/
10/1
22
Volat
ile0.
1/0.
25/1
0.1/
0.25
/110
-pin
MSO
P, 1
6-pi
n Q
FN, 1
0-pi
n DF
NM
CP4
8CVB
02/1
2/22
8/10
/12
2Vo
latile
0.1/
0.25
/10.
1/0.
25/1
10-p
in M
SOP,
16-
pin
QFN
, 10-
pin
DFN
MC
P47C
MB0
1/11
/21
8/10
/12
1M
TP0.
1/0.
25/1
0.1/
0.25
/110
-pin
MSO
P, 1
6-pi
n Q
FN, 1
0-pi
n DF
NM
CP4
8CM
B01/
11/2
18/
10/1
21
MTP
0.1/
0.25
/10.
1/0.
25/1
10-p
in M
SOP,
16-
pin
QFN
, 10-
pin
DFN
MC
P47C
MB0
2/12
/22
8/10
/12
2M
TP0.
1/0.
25/1
0.1/
0.25
/110
-pin
MSO
P, 1
6-pi
n Q
FN, 1
0-pi
n DF
NM
CP4
8CM
B02/
12/2
28/
10/1
22
MTP
0.1/
0.25
/10.
1/0.
25/1
10-p
in M
SOP,
16-
pin
QFN
, 10-
pin
DFN
Mix
ed S
igna
l: En
ergy
Met
er a
nd P
ower
Mon
itorin
g IC
s
Prod
uct
Dyn
amic
Ra
nge
Typi
cal
Accu
racy
ADC
C
hann
els
ADC
Re
solu
tion
SIN
ADG
ain
Sele
ctio
nO
utpu
t Ty
peAn
alog
Vd
d (V
)D
igita
l Vd
d
(V)
Tem
pera
ture
Ra
nge
(°C)
Feat
ures
Pack
ages
MC
P391
8/10
/19
1000
0:1
0.1%
1/2/
324
94.5
dB
1 to
32
SPI/2
-Wire
2.7–
3.6
2.7–
3.6
–40
to +
125
Two
Chan
nel,
24-b
it AF
E w
ith P
hase
Cor
rect
ion,
Pro
gram
mab
le Da
ta R
ate
up to
12
5 kS
PS, 1
6-bi
t CRC
, Reg
ister
Map
Loc
k, 2
-wire
Inte
rface
4 m
m x
4 m
m
QFN
-20,
SSO
P-20
MC
P391
1/12
/13/
1410
000:
10.
1%2/
4/6/
824
94.5
dB
1 to
32
SPI
2.7–
3.6
2.7–
3.6
–40
to +
125
Two
Chan
nel,
24-b
it AF
E w
ith P
hase
Cor
rect
ion,
Pro
gram
mab
le Da
ta R
ate
up to
12
5 kS
PS, 1
6-bi
t CRC
, Reg
ister
Map
Loc
k4
mm
x 4
mm
Q
FN-2
0, S
SOP-
20
MC
P39F
511N
4000
:10.
5%3
2494
.5 d
B1
to 3
2UA
RT/
Sing
le-w
ire2.
7–3.
6 2.
7–3.
6 –4
0 to
+12
5Du
al-ch
anne
l pow
er m
onito
ring
IC w
ith a
ctive
, rea
ctive
and
app
aren
t pow
er,
activ
e an
d re
activ
e en
ergy
, PF,
RMS
curre
nt/v
olta
ge, f
requ
ency
, eve
nt
notifi
catio
ns, E
EPRO
M, P
WM
out
put
5 m
m x
5 m
m
QFN
-28
MC
P39F
511A
4000
:10.
1%2
2494
.5 d
B1
to 3
2UA
RT/
Sing
le-w
ire2.
7–3.
6 2.
7–3.
6 –4
0 to
+12
5AC
/DC
Dual-
mod
e Po
wer
mon
itorin
g IC
with
act
ive, r
eact
ive a
nd a
ppar
ent
pow
er, a
ctive
and
reac
tive
ener
gy, P
F, RM
S cu
rrent
/vol
tage
, fre
quen
cy, e
vent
no
tifica
tions
, EEP
ROM
, PW
M o
utpu
t
5 m
m x
5 m
m
QFN
-28
Mix
ed S
igna
l: C
urre
nt/D
C P
ower
Mea
sure
men
t IC
s
Prod
uct
# C
urre
nt
Sens
ors
Des
crip
tion
Full
Scal
e R
ange
(mV)
Cur
rent
M
easu
rem
ent
Max
. Acc
r. (%
)
Effec
tive
Sam
plin
g In
terv
al M
in. t
o M
ax.
(mse
c)
Bus
Volta
ge
Ran
ge (V
)#
Tem
p. M
onito
rs
(Am
bien
t, R
emot
e)Te
mp.
Acc
urac
y Ty
p./M
ax. (
°C)
Aler
t/Th
erm
.Pe
ak
Det
ectio
nIn
terf
ace
Pack
ages
PAC
1710
/20
1/2
Curre
nt/D
C Po
wer
Sen
sor
10, 2
0, 4
0, 8
0±1
2.5
to 2
600
0 to
+40
N/A
N/A
1–
SMBu
s/I² C
10-p
in D
FNPA
C19
211
SMBu
s/I² C
Cur
rent
/Pow
er S
enso
r with
Ana
log
Out
put
100
±12.
5 to
290
00
to +
32N/
AN/
A–
–SM
Bus/
I² C10
-pin
DFN
PAC
1934
4SM
Bus/
I² C C
urre
nt/P
ower
Sen
sor w
ith A
ccum
ulat
or10
0±0
.90.
98 to
125
0 to
+32
N/A
N/A
1–
SMBu
s/I² C
WLC
SP
EMC
1701
/2/4
1Cu
rrent
/DC
Pow
er S
enso
r with
Tem
pera
ture
Mon
itorin
g10
, 20,
40,
80
±12.
5 to
260
0+3
to +
241,
0/1
/3±0
.25/
±1.0
2Y
SMBu
s/I² C
12-p
in Q
FN, 1
0-pi
n M
SOP,
16
-pin
QFN
, 14-
pin
SOIC
Mix
ed S
igna
l: D
igita
l Pot
entio
met
ers
Prod
uct
# of
Tap
s M
emor
y C
hann
els
Inte
rfac
e R
esis
tanc
e (k
Ω)
Tem
pera
ture
Ran
ge (°
C)
Pack
ages
MC
P401
1/12
/13/
14
64Vo
latile
1
Up/D
own
2.1,
5, 1
0, 5
0 −4
0 to
+12
5 DF
N, S
OT-
23
MC
P401
7/18
/19
128
Volat
ile
1I² C
5, 1
0, 5
0, 1
00
−40
to +
125
SC70
MC
P40D
17/D
18/D
19
128
Volat
ile
1I² C
5, 1
0, 5
0, 1
00
−40
to +
125
SC70
MC
P402
1/22
/23/
24
64No
nvol
atile
1
Up/D
own
2.1,
5, 1
0, 5
0 −4
0 to
+12
5 DF
N, S
OT-
23
MC
P414
1/42
12
8No
nvol
atile
1
SPI
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, Q
FN, D
FN
MC
P424
1/42
12
8No
nvol
atile
2
SPI
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, Q
FN, D
FN
MC
P413
1/32
12
8Vo
latile
1
SPI
5, 1
0, 5
0, 1
00
−40
to +
125
QFN
, DFN
MC
P423
1/32
12
8Vo
latile
2
SPI
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, Q
FN, D
FN
MC
P415
1/52
25
6Vo
latile
1
SPI
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, Q
FN, D
FN
Focus Product Selector Guide 29
Mix
ed S
igna
l: D
igita
l Pot
entio
met
ers
Prod
uct
# of
Tap
s M
emor
y C
hann
els
Inte
rfac
e R
esis
tanc
e (k
Ω)
Tem
pera
ture
Ran
ge (°
C)
Pack
ages
MC
P41H
V31
128
Volat
ile1
SPI
5, 1
0, 5
0, 1
00−4
0 to
+12
5TS
SOP,
QFN
MC
P41H
V51
256
Volat
ile1
SPI
5, 1
0, 5
0, 1
00−4
0 to
+12
5TS
SOP,
QFN
MC
P416
1/62
25
6No
nvol
atile
1
SPI
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, Q
FN, D
FN
MC
P425
1/52
25
6Vo
latile
2
SPI
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, Q
FN, D
FN
MC
P426
1/62
25
6No
nvol
atile
2
SPI
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, Q
FN, D
FN
MC
P434
1/42
129
Nonv
olat
ile4
SPI
5, 1
0, 5
0, 1
00−4
0 to
+12
5TS
SOP,
QFN
MC
P436
1/62
257
Nonv
olat
ile4
SPI
5, 1
0, 5
0, 1
00−4
0 to
+12
5TS
SOP,
QFN
MC
P433
1/32
129
Volat
ile4
SPI
5,10
,50,
100
−40
to +
125
TSSO
P, Q
FN
MC
P435
1/52
257
Volat
ile4
SPI
5,10
,50,
100
−40
to +
125
TSSO
P, Q
FN
MC
P443
1/32
129
Volat
ile4
I² C5,
10,
50,
100
−40
to +
125
TSSO
P, Q
FN
MC
P444
1/42
129
Nonv
olat
ile4
I² C5,
10,
50,
100
−40
to +
125
TSSO
P, Q
FN
MC
P445
1/52
257
Volat
ile4
I² C5,
10,
50,
100
−40
to +
125
TSSO
P, Q
FN
MC
P446
1/62
257
Nonv
olat
ile4
I² C5,
10,
50,
102
−40
to +
125
TSSO
P, Q
FN
MC
P453
1/32
128
Volat
ile
1I² C
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, D
FN
MC
P463
1/32
12
8Vo
latile
2
I² C5,
10,
50,
100
−4
0 to
+12
5 M
SOP,
DFN
MC
P454
1/42
12
8No
nvol
atile
1
I² C5,
10,
50,
100
−4
0 to
+12
5 M
SOP,
DFN
MC
P46H
V31
128
Volat
ile1
I² C5,
10,
50,
100
−40
to +
125
TSSO
P, Q
FN
MC
P45H
V51
256
Volat
ile1
I² C5,
10,
50,
100
−40
to +
125
TSSO
P, Q
FN
MC
P464
1/42
128
Nonv
olat
ile
2I² C
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, D
FN
MC
P455
1/52
256
Volat
ile
1I² C
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, D
FN
MC
P465
1/52
256
Volat
ile
2I² C
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, D
FN
MC
P456
1/62
256
Nonv
olat
ile
1I² C
5, 1
0, 5
0, 1
00
−40
to +
125
MSO
P, D
FN
MC
P466
1/62
25
6No
nvol
atile
2
I² C5,
10,
50,
100
−4
0 to
+12
5 M
SOP,
DFN
Mix
ed S
igna
l: D
elta
-Sig
ma
Anal
og-t
o-D
igita
l Con
vert
ers
Prod
uct
Res
olut
ion
(bits
)M
axim
um S
ampl
ing
Rat
e (s
ampl
es/s
ec)
# of
Inpu
t C
hann
els
Inte
rfac
eTy
pica
l Sup
ply
Cur
rent
(μA)
Tem
pera
ture
R
ange
(°C
)Fe
atur
esPa
ckag
es
MC
P346
116
153.
6k2
SPI
930
–40
to +
125
One
Diffe
rent
ial o
r Tw
o Si
ngle-
ende
d In
put C
hann
els, 1
53.6
kSP
S, L
ow-N
oise
16-
Bit D
elta-
Sigm
a AD
Cs3
mm
x 3
mm
UQ
FN-2
0
MC
P346
216
153.
6k4
SPI
930
–40
to +
125
Two
Diffe
rent
ial o
r Fou
r Sin
gle-
ende
d In
put C
hann
els, 1
53.6
kSP
S, L
ow-N
oise
16-
Bit D
elta-
Sigm
a AD
Cs3
mm
x 3
mm
UQ
FN-2
0
MC
P346
416
153.
6k8
SPI
930
–40
to +
125
Four
Diffe
rent
ial o
r Eig
ht S
ingl
e-en
ded
Inpu
t Cha
nnels
, 153
.6 k
SPS,
Low
-Noi
se 1
6-Bi
t Delt
a-Si
gma
ADCs
3 m
m x
3 m
m U
QFN
-20
MC
P356
124
153.
6k2
SPI
930
–40
to +
125
One
Diffe
rent
ial o
r Tw
o Si
ngle-
ende
d In
put C
hann
els, 1
53.6
kSP
S, L
ow-N
oise
24-
Bit D
elta-
Sigm
a AD
Cs3
mm
x 3
mm
UQ
FN-2
0
MC
P356
224
153.
6k4
SPI
930
–40
to +
125
Two
Diffe
rent
ial o
r Fou
r Sin
gle-
ende
d In
put C
hann
els, 1
53.6
kSP
S, L
ow-N
oise
24-
Bit D
elta-
Sigm
a AD
Cs3
mm
x 3
mm
UQ
FN-2
0
MC
P356
424
153.
6k8
SPI
930
–40
to +
125
Four
Diffe
rent
ial o
r Eig
ht S
ingl
e-en
ded
Inpu
t Cha
nnels
, 153
.6 k
SPS,
Low
-Noi
se 2
4-Bi
t Delt
a-Si
gma
ADCs
3 m
m x
3 m
m U
QFN
-20
MC
P391
024
125k
2SP
I/2-W
ire25
00–4
0 to
+12
5Tw
o Ch
anne
l, 12
5 kS
PS, 2
4-bi
t Sim
ulta
neou
sly S
ampl
ing
Delta
-Sig
ma
ADCs
with
2-W
ire M
ode,
AEC
-Q10
0 G
rade
14
mm
x 4
mm
QFN
-20,
SSO
P-20
MC
P391
124
125k
2SP
I25
00–4
0 to
+12
5Tw
o Ch
anne
l, 12
5 kS
PS, 2
4-bi
t Sim
ulta
neou
sly S
ampl
ing
Delta
-Sig
ma
ADCs
, AEC
-Q10
0 G
rade
14
mm
x 4
mm
QFN
-20,
SSO
P-20
MC
P391
224
125k
4SP
I47
00–4
0 to
+12
5Fo
ur C
hann
el, 1
25 k
SPS,
24-
bit S
imul
tane
ously
Sam
plin
g De
lta-S
igm
a AD
Cs, A
EC-Q
100
Gra
de 1
4 m
m x
4 m
m Q
FN-2
0, S
SOP-
20
MC
P391
324
125k
6SP
I74
00–4
0 to
+12
5Si
x Ch
anne
l, 12
5 kS
PS, 2
4-bi
t Sim
ulta
neou
sly S
ampl
ing
Delta
-Sig
ma
ADCs
, AEC
-Q10
0 G
rade
14
mm
x 4
mm
QFN
-20,
SSO
P-20
MC
P391
424
125k
8SP
I98
00–4
0 to
+12
5Ei
ght C
hann
el, 1
25 k
SPS,
24-
bit S
imul
tane
ously
Sam
plin
g De
lta-S
igm
a AD
Cs, A
EC-Q
100
Gra
de 1
4 m
m x
4 m
m Q
FN-2
0, S
SOP-
20
MC
P391
824
125k
1SP
I/2-W
ire13
00–4
0 to
+12
5Si
ngle
Chan
nel,
125
kSPS
, 24-
bit S
imul
tane
ously
Sam
plin
g De
lta-S
igm
a AD
Cs, A
EC-Q
100
Gra
de 1
4 m
m x
4 m
m Q
FN-2
0, S
SOP-
20
MC
P391
924
125k
3SP
I/2-W
ire35
00–4
0 to
+12
5Th
ree
Chan
nel,
125
kSPS
, 24-
bit S
imul
tane
ously
Sam
plin
g De
lta-S
igm
a AD
Cs, A
EC-Q
100
Gra
de 1
4 m
m x
4 m
m Q
FN-2
0, S
SOP-
20
www.microchip.com30
Mix
ed S
igna
l: Pi
pelin
ed A
nalo
g-to
-Dig
ital C
onve
rter
s
Prod
uct
Res
olut
ion
(b
its)
Max
imum
Sa
mpl
ing
Rat
e
(Msa
mpl
es/s
ec)
# of
Inpu
t C
hann
els
Pow
er
Dis
sipa
tion
(mW
)In
terf
ace
Inpu
t Cha
nnel
BW
(MH
z)SN
R
(dB)
SFD
R
(dB)
Tem
pera
ture
R
ange
(°C
)Fe
atur
es
Pack
ages
MC
P37D
10-2
0012
200
133
8Se
rial D
DR L
VDS
or P
arall
el CM
OS
650
6796
−40
to +
85Di
gita
l dow
n-co
nver
ter,
decim
atio
n filt
ers,
noi
se-s
hapi
ng re
quan
tizer
124-
pin
VTLA
, 12
1-pi
n TF
BGA
MC
P372
10-2
0012
200
133
8Se
rial D
DR L
VDS
or P
arall
el CM
OS
650
6796
−40
to +
85De
cimat
ion
filter
s, n
oise
-sha
ping
requ
antiz
er12
4-pi
n VT
LA,
121-
pin
TFBG
A
MC
P37D
11-2
0012
200
8-m
ux, D
iff46
8Se
rial D
DR L
VDS
or P
arall
el CM
OS
1.2,
1.8
71.3
90−4
0 to
+85
Decim
atio
n filt
ers,
dig
ital d
own-
conv
erte
r, no
ise-s
hapi
ng re
quan
tizer
124-
pin
VTLA
, 12
1-pi
n TF
BGA
MC
P372
11-2
0012
200
8-m
ux, D
iff46
8Se
rial D
DR L
VDS
or P
arall
el CM
OS
1.2,
1.8
71.3
90−4
0 to
+85
Decim
atio
n filt
ers,
noi
se-s
hapi
ng re
quan
tizer
124-
pin
VTLA
, 12
1-pi
n TF
BGA
MC
P37D
20-2
0014
200
134
8Se
rial D
DR L
VDS
or P
arall
el CM
OS
650
67.8
96−4
0 to
+85
Digi
tal d
own-
conv
erte
r, de
cimat
ion
filter
s12
4-pi
n VT
LA,
121-
pin
TFBG
A
MC
P372
20-2
0014
200
134
8Se
rial D
DR L
VDS
or P
arall
el CM
OS
650
67.8
96−4
0 to
+85
Decim
atio
n filt
ers,
noi
se-s
hapi
ng re
quan
izer
124-
pin
VTLA
, 12
1-pi
n TF
BGA
MC
P37D
21-2
0014
200
8-m
ux, D
iff49
0Se
rial D
DR L
VDS
or P
arall
el CM
OS
1.2,
1.8
74.2
90−4
0 to
+85
Decim
atio
n filt
ers,
dig
ital d
own-
conv
erte
r12
4-pi
n VT
LA,
121-
pin
TFBG
A
MC
P372
21-2
0014
200
8-m
ux, D
iff49
0Se
rial D
DR L
VDS
or P
arall
el CM
OS
1.2,
1.8
74.2
90−4
0 to
+85
Decim
atio
n filt
ers
124-
pin
VTLA
, 12
1-pi
n TF
BGA
MC
P37D
31-2
0016
200
8-m
ux, D
iff49
0Se
rial D
DR L
VDS
or P
arall
el CM
OS
500
7490
−40
to +
85De
cimat
ion
filter
s12
4-pi
n VT
LA,
121-
pin
TFBG
A
MC
P372
31-2
0016
200
8-m
ux, D
iff49
0Se
rial D
DR L
VDS
or P
arall
el CM
OS
500
7490
−40
to +
85Di
gita
l dow
n-co
ntve
rter,
decim
atio
n filt
ers
124-
pin
VTLA
, 12
1-pi
n TF
BGA
Inte
rfac
e: C
AN P
rodu
cts
Prod
uct
Des
crip
tion
and
Feat
ures
Ope
ratin
g
Volta
ge (V
)O
pera
ting
Tem
pera
ture
R
ange
(°C
)Pa
ckag
es
ATA6
560
CAN
Tran
sceiv
er w
ith s
tand
-by
and
silen
t mod
e, 5
V I/O
, CAN
FD
read
y, 5
Mbp
s, A
ECQ
100
Gra
de 1
4.5–
5.5
–40
to +
125
VDFN
8, S
OIC
8AT
A656
1CA
N Tr
ansc
eiver
with
sta
nd-b
y m
ode,
com
patib
le w
ith 3
.3V
and
5V m
icroc
ontro
ller,
CAN
FD re
ady,
5 M
bps,
AEC
Q10
0 G
rade
14.
5–5.
5–4
0 to
+12
5VD
FN8,
SO
IC8
ATA6
562
CAN
Tran
sceiv
er w
ith s
tand
-by
and
silen
t mod
e, 5
V I/O
, wak
e-up
pat
tern
, CAN
FD
read
y, 5
Mbp
s, A
ECQ
100
Gra
de 0
, 14.
5–5.
5–4
0 to
+12
5/15
0VD
FN8,
SO
IC8
ATA6
563
CAN
Tran
sceiv
er w
ith s
tand
-by
mod
e, c
ompa
tible
with
3.3
V an
d 5V
micr
ocon
trolle
r, w
ake-
up p
atte
rn, C
AN F
D re
ady,
5 M
bps,
AEC
Q10
0 G
rade
0, 1
4.5–
5.5
–40
to +
125/
150
VDFN
8, S
OIC
8AT
A656
4CA
N Tr
ansc
eiver
with
sile
nt m
ode,
com
patib
le w
ith 3
.3V
and
5V m
icroc
ontro
ller,
CAN
FD re
ady,
5 M
bps,
AEC
Q10
0 G
rade
0, 1
4.5–
5.5
–40
to +
125/
150
VDFN
8, S
OIC
8AT
A656
5Du
al CA
N Tr
ansc
eiver
with
sta
nd-b
y m
ode,
5V
I/O, w
ake
up p
atte
rn, C
AN F
D re
ady,
5 M
bps,
AEC
Q10
0 G
rade
0, 1
4.5–
5.5
–40
to +
125/
150
VDFN
14, S
O14
ATA6
566
CAN
Tran
sceiv
er w
ith s
tand
-by
mod
e, c
ompa
tible
with
3.3
V an
d 5V
micr
ocon
trolle
r, w
ake-
up p
atte
rn, C
AN F
D re
ady,
2 M
bps,
AEC
Q10
0 G
rade
0, 1
, suit
able
for t
he J
apan
ese
mar
ket
4.5–
5.5
–40
to +
125/
150
VDFN
8, S
OIC
8
ATA6
570
CAN
Parti
al Ne
twor
king
Tran
sceiv
er w
ith W
ake
pin
and
Wind
ow W
atch
dog,
com
patib
le w
ith 3
.3V
and
5V m
icroc
ontro
ller,
wak
e-up
pat
tern
or w
ake-
up fr
ame,
CAN
FD
read
y, 5
Mbp
s,
AECQ
100
Gra
de 1
4.55
–28
–40
to +
125
SOIC
14
MC
P251
5St
and-
Alon
e CA
N 2.
0B C
ontro
ller w
ith S
PI In
terfa
ce2.
7–5.
5–4
0 to
+12
518
-pin
PDI
P, 1
8-pi
n SO
IC,
20-p
in T
SSO
PM
CP2
517F
DEx
tern
al CA
N FD
Con
trolle
r with
SPI
Inte
rface
, ISO
118
98-1
:201
5 Co
mpl
iant,
32-b
it Ti
me
Stam
p, S
uppo
rts C
AN 2
.0B
and
CAN
FD, H
ighl
y Co
nfigu
rabl
e 31
FIF
Os
and
32 F
ilters
2.7–
5.5
–40
to +
150
14-p
in S
OIC
, 14-
pin
VDFN
MC
P256
25In
tegr
ated
Hig
h-Sp
eed
CAN
Tran
sceiv
er a
nd C
AN 2
.0B
Cont
rolle
r2.
7–5.
5–4
0 to
+12
528
-pin
SSO
P, 2
8-pi
n 6
× 6
QFN
Inte
rfac
e: L
IN P
rodu
cts
Prod
uct
Des
crip
tion
Vreg
Out
put
Volta
ge (V
)O
pera
ting
Tem
pera
ture
R
ange
(°C
)Vr
eg O
utpu
t C
urre
nt (m
A)Su
pply
Vol
tage
R
ange
(V)
Max
. Bau
d R
ate
LIN
Spe
cific
atio
n Su
ppor
ted
Pack
ages
ATA6
6321
1LI
N Tr
ansc
eiver
––4
0 to
+12
5–
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2VD
FN8,
SO
IC8
ATA6
6320
1LD
O, p
in c
ompa
tible
with
ATA
6632
31 L
IN S
BC3.
3–4
0 to
+12
585
5–28
––
VDFN
8AT
A663
203
LDO
, pin
com
patib
le w
ith A
TA66
3254
LIN
SBC
5.0
–40
to +
125
855–
28–
–VD
FN8
ATA6
6323
1LI
N Tr
ansc
eiver
with
inte
grat
ed V
reg, p
inou
t acc
. to
OEM
har
dwar
e re
com
men
datio
n3.
3–4
0 to
+12
585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2VD
FN8
ATA6
6325
4LI
N Tr
ansc
eiver
with
inte
grat
ed V
reg, p
inou
t acc
. to
OEM
har
dwar
e re
com
men
datio
n5.
0–4
0 to
+12
585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2VD
FN8,
SO
IC8
ATA6
6323
2LI
N Tr
ansc
eiver
with
inte
grat
ed V
reg
and
Wak
e Pi
n, p
inout
acc
. to
OEM
har
dwar
e re
com
men
datio
n3.
3–4
0 to
+12
585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2VD
FN8
ATA6
6325
5LI
N Tr
ansc
eiver
with
inte
grat
ed V
reg
and
Wak
e Pi
n, p
inout
acc
. to
OEM
har
dwar
e re
com
men
datio
n5.
0–4
0 to
+12
585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2VD
FN8
ATA6
625
LIN
Tran
sceiv
er w
ith in
tegr
ated
Vre
g, c
lassic
pin
out
5.0
–40
to +
125
855–
2820
kBa
ud2.
0, 2
.1, 2
.2, 2
.2A,
SAE
J260
2-2
VDFN
8, S
OIC
8AT
A663
331
LIN
Tran
sceiv
er w
ith in
tegr
ated
Vre
g a
nd 2
relay
driv
er3.
3–4
0 to
+12
585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2VD
FN16
ATA6
6335
4LI
N Tr
ansc
eiver
with
inte
grat
ed V
reg a
nd 2
relay
driv
er5.
0–4
0 to
+12
585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2VD
FN16
ATA6
6343
1LI
N Tr
ansc
eiver
with
inte
grat
ed V
reg a
nd W
WDT
3.3
–40
to +
125
855–
2820
kBa
ud2.
0, 2
.1, 2
.2, 2
.2A,
SAE
J260
2-2
VDFN
16
Focus Product Selector Guide 31
Inte
rfac
e: L
IN P
rodu
cts
Prod
uct
Des
crip
tion
Vreg
Out
put
Volta
ge (V
)O
pera
ting
Tem
pera
ture
R
ange
(°C
)Vr
eg O
utpu
t C
urre
nt (m
A)Su
pply
Vol
tage
R
ange
(V)
Max
. Bau
d R
ate
LIN
Spe
cific
atio
n Su
ppor
ted
Pack
ages
ATA6
6345
4LI
N Tr
ansc
eiver
with
inte
grat
ed V
reg a
nd W
WDT
5.0
–40
to +
125
855–
2820
kBa
ud2.
0, 2
.1, 2
.2, 2
.2A,
SAE
J260
2-2
VDFN
16AT
SAM
HA1
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N Sy
stem
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acka
ge (S
iP) S
olut
ion
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orte
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6 KB
Flas
h m
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3–4
0 to
+85
855–
2820
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0, 2
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.2, 2
.2A,
SAE
J260
2-2
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48AT
SAM
HA1
G15
ALI
N Sy
stem
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acka
ge (S
iP) S
olut
ion
incl.
Arm
Cor
tex
M0+
MCU
, 32
KB F
lash
mem
ory
3.3
–40
to +
8585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2Q
FN48
ATSA
MH
A1G
16A
LIN
Syst
em-in
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kage
(SiP
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utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 6
4 KB
Flas
h m
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3–4
0 to
+85
855–
2820
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0, 2
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.2, 2
.2A,
SAE
J260
2-2
QFN
48AT
SAM
HA1
E14A
LIN
Syst
em-in
-Pac
kage
(SiP
) Sol
utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 1
6 KB
Flas
h m
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3–4
0 to
+85
855–
2820
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ud2.
0, 2
.1, 2
.2, 2
.2A,
SAE
J260
2-2
QFN
32AT
SAM
HA1
E15A
LIN
Syst
em-in
-Pac
kage
(SiP
) Sol
utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 3
2 KB
Flas
h m
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y3.
3–4
0 to
+85
855–
2820
kBa
ud2.
0, 2
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.2A,
SAE
J260
2-2
QFN
32AT
SAM
HA1
E16A
LIN
Syst
em-in
-Pac
kage
(SiP
) Sol
utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 6
4 KB
Flas
h m
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y3.
3–4
0 to
+85
855–
2820
kBa
ud2.
0, 2
.1, 2
.2, 2
.2A,
SAE
J260
2-2
QFN
32AT
SAM
HA0
E14A
LIN
Syst
em-in
-Pac
kage
(SiP
) Sol
utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 1
6 KB
Flas
h m
emor
y3.
3–4
0 to
+10
585
5–28
20 k
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2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2Q
FN32
ATSA
MH
A0E1
5ALI
N Sy
stem
-in-P
acka
ge (S
iP) S
olut
ion
incl.
Arm
Cor
tex
M0+
MCU
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KB F
lash
mem
ory
3.3
–40
to +
105
855–
2820
kBa
ud2.
0, 2
.1, 2
.2, 2
.2A,
SAE
J260
2-2
QFN
32AT
SAM
HA0
E16A
LIN
Syst
em-in
-Pac
kage
(SiP
) Sol
utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 6
4 KB
Flas
h m
emor
y3.
3–4
0 to
+10
585
5–28
20 k
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2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2Q
FN32
ATSA
MH
A0G
14A
LIN
Syst
em-in
-Pac
kage
(SiP
) Sol
utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 1
6 KB
Flas
h m
emor
y3.
3–4
0 to
+10
585
5–28
20 k
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2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2Q
FN48
ATSA
MH
A0G
15A
LIN
Syst
em-in
-Pac
kage
(SiP
) Sol
utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 3
2 KB
Flas
h m
emor
y3.
3–4
0 to
+10
585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2Q
FN48
ATSA
MH
A0G
16A
LIN
Syst
em-in
-Pac
kage
(SiP
) Sol
utio
n in
cl. A
rm C
orte
x M
0+ M
CU, 6
4 KB
Flas
h m
emor
y3.
3–4
0 to
+10
585
5–28
20 k
Baud
2.0,
2.1
, 2.2
, 2.2
A, S
AEJ2
602-
2Q
FN48
Ultr
asou
nd:
T/R
Sw
itch
ICs
Prod
uct
Num
ber o
f Cha
nnel
sVo
ltage
(V)
RSW
Dio
de C
lam
psVT
RIP
(V)
BW (M
Hz)
Pack
ages
MD
0100
1 or
2±1
0015
No±2
.010
03-
pin
SOT-
89, 8
-pin
VDF
NM
D01
014
±100
15Ye
s±2
.010
018
-pin
VDF
NM
D01
054
±100
15Ye
s±2
.010
018
-pin
VDF
N
Ultr
asou
nd:
Arbi
trar
y W
avef
orm
Gen
erat
or
Prod
uct
Res
olut
ion
Ampl
itude
Con
trol
Apod
izat
ion
Inpu
t Vol
tage
(V)
Typi
cal D
elay
Tim
e (n
s)O
utpu
t Cur
rent
(A)
Pack
ages
MD
2131
7.5°
Pha
sePW
M8-
bit S
PI2.
54
0–3.
040
-pin
WQ
FNM
D21
34±1
27 s
teps
PWM
8-bi
t SPI
2.5
40–
3.0
40-p
in W
QFN
Ultr
asou
nd:
MO
SFET
Driv
er
Prod
uct
Num
ber o
f Driv
ers
Inpu
t Vol
tage
Min
. (V)
Inpu
t Vol
tage
Max
. (V)
Out
put V
olta
ge B
ipol
ar (V
)O
utpu
t Vol
tage
Uni
pola
r (V)
Pack
ages
MD
1210
21.
25
–0–
1212
-pin
QFN
MD
1711
121.
85.
5–
0–12
48-p
in L
QFP
, 48-
pin
VQFN
MD
1712
121.
85.
5–
0–12
48-p
in L
QFP
, 48-
pin
VQFN
MD
1715
21.
83.
6–
0–12
40-p
in V
QFN
MD
1810
41.
25
±5.0
0–12
16-p
in Q
FNM
D18
114
1.2
5±5
.00–
1216
-pin
QFN
MD
1820
41.
75.
25±5
.00–
1216
-pin
VQ
FNM
D18
224
1.7
5.25
±5.0
0–12
16-p
in V
QFN
Ultr
asou
nd:
Hig
h-Vo
ltage
Ultr
asou
nd T
rans
mitt
ers
Prod
uct
Num
ber o
f Cha
nnel
sO
utpu
t Vol
tage
(V)
Num
ber O
utpu
t Lev
els
HD
2 (d
B)O
utpu
t Cur
rent
(A)
Feat
ures
Pack
ages
HV7
321
4±8
05
−44
±2.5
Built-
in T
/R s
witc
hes,
out
put p
rote
ctio
n di
odes
and
clam
p di
odes
64-p
in V
QFN
(9 x
9 m
m)
HV7
350
8±6
03
−40
±1.0
Built-
in fl
oatin
g po
wer
sup
plies
56-p
in V
QFN
HV7
351
8±7
03
−40
±3.0
Prog
ram
mab
le lau
nch
delay
, 4 tr
ansm
it w
avef
orm
s, c
lock
up
to 2
00 M
Hz80
-pin
VQ
FNH
V736
01
±100
3–
±2.5
Built-
in c
oupl
ing
capa
citor
s22
-pin
CAB
GA
HV7
361
1±1
003
–±2
.5Bu
ilt-in
T/R
sw
itch,
8 c
apac
itors
22-p
in C
ABG
AH
V732
28
±80
7−4
0±2
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Chan
nel 7
-leve
l with
dua
l T/R
206-
ball T
FBG
A 12
× 1
2 m
mH
V735
816
±80
7−4
0±1
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-Cha
nnel
3-Le
vel w
ith B
uilt-
in D
igita
l Bea
mfo
rmer
and
T/R
168-
ball T
FBG
A 13
× 1
3 m
m
www.microchip.com32
Ultr
asou
nd: M
OSF
ET A
rray
Prod
uct
BVds
s/BV
dss
N-C
hann
el (V
)BV
dss/
BVds
s P-
Cha
nnel
(V)
Rds
(on)
N-C
hann
el m
ax (Ω
)R
ds(o
n) P
-Cha
nnel
max
(Ω)
Vgs(
th) m
ax (V
)N
ote
Pack
age
TC63
2020
0−2
007
82
N- a
nd P
-Cha
nnel
pair
8-pi
n SO
IC, 8
-pin
VD
FN
TC80
2020
0−2
008
9.5
3Si
x N-
and
P-C
hann
el pa
irs56
-pin
VQ
FN
TC82
2020
0−2
005.
36.
52
Two
N- a
nd P
-Cha
nnel
Pairs
12-p
in V
DFN
CO
and
Sm
oke
Det
ecto
r IC
s
Prod
uct
Hor
n D
river
Det
ectio
n M
etho
d Lo
w B
atte
ry
Det
ectio
n Al
arm
Mem
ory
Alar
m In
terc
onne
ct
Hus
h/Se
nsiti
vity
Tim
er
Ope
ratin
g Te
mpe
ratu
re R
ange
(°C
) Pa
ckag
es
RE46
C19
1Ye
sPh
oto
Yes
Yes
Yes
Yes
−10
to +
6016
-pin
SO
ICRE
46C
317/
8Ye
sJu
st D
river
NoNo
NoNo
−10
to +
60PD
IP, S
OIC
RE46
C80
3Ye
sCO
NoNo
NoNo
−10
to +
6020
-pin
SSO
P
Mot
or D
river
s: S
tepp
er M
otor
s, D
C M
otor
s an
d 3-
Phas
e BL
DC
Fan
Con
trol
lers
Prod
uct
Mot
or T
ype
Inpu
t Vo
ltage
R
ange
(V)
Inte
rnal
/Ex
tern
al
FETs
Out
put
Cur
rent
(m
A)C
ontr
ol S
chem
eM
otor
Sp
eed
Out
put
Prot
ectio
nsO
pera
ting
Tem
p.
Ran
ge (°
C)
Feat
ures
Pack
ages
ATA6
826C
DC M
otor
7 to
40
Inte
rnal
1000
SPI
N/A
Shor
t Circ
uit,
Ove
rtem
pera
ture
, Po
wer
Sup
ply
Fail
–40
to 1
253
half
brid
ge o
utpu
ts, N
o sh
oot-t
hrou
gh, V
ery
low
qui
esce
nt c
urre
nt <
2 µA
SO14
ATA6
831C
(2C
)DC
Mot
or7
to 4
0In
tern
al10
00SP
IN/
ASh
ort C
ircui
t, O
verte
mpe
ratu
re,
Pow
er S
uppl
y Fa
il–4
0 to
125
(150
)3
half
brid
ge o
utpu
ts, N
o sh
oot t
hrou
gh, V
ery
low
qui
esce
nt c
urre
nt <
2 µA
, PW
M
inpu
t18
-pin
4 x
4 Q
FN
ATA6
836C
(8C
)DC
Mot
or7
to 4
0In
tern
al65
0 (9
50)
SPI
N/A
Shor
t Circ
uit,
Ove
rtem
pera
ture
, Po
wer
Sup
ply
Fail
–40
to 1
256
half
brid
ge o
utpu
ts, N
o sh
oot t
hrou
gh, V
ery
low
qui
esce
nt c
urre
nt <
2 µA
24-p
in 5
x 5
QFN
, SO
28
ATA6
823C
(4C
)DC
Mot
or7
to 2
0In
tern
al10
0PW
M, D
IRN/
ASh
ort C
ircui
t, O
verte
mpe
ratu
re,
Ove
r/Und
er V
olta
ge, C
harg
epum
p Fa
il–4
0 to
125
(150
)De
ad ti
me
adju
st, C
harg
e pu
mp
supp
ly fo
r ext
erna
l bat
tery
reve
rse
prot
ectio
n NM
OS,
LDO
3.3
V/5V
, Win
dow
Wat
chdo
g, L
IN T
RX (H
V in
terfa
ce)
32-p
in 7
x 7
QFN
, 32
-pin
7 x
7 T
QFP
MC
P802
63-
Phas
e Br
ushl
ess
Mot
ors
6 to
28
Exte
rnal
500
Dire
ct P
WM
N/A
Ove
rcur
rent
, Ove
rvol
tage
, Un
derv
olta
ge, O
verte
mpe
ratu
re,
48V
Load
Dum
p Pr
otec
tion,
Sho
rt Ci
rcui
t, Sh
oot T
hrou
gh
–40
to +
150
3 O
p Am
ps, A
dj. B
uck
Regu
lator
, 5V
LDO
, 12V
LDO
, The
rmal
War
ning
, Dea
d Ti
me,
Blan
king
Tim
e, L
evel
Tran
slato
r, M
otor
Ena
ble,
Slee
p M
ode
(MCP
8026
)40
-pin
5 ×
5 Q
FN,
48-p
in 7
× 7
TQ
FP
MC
P802
5A3-
Phas
e Br
ushl
ess
Mot
or6
to 1
9Ex
tern
al50
0Di
rect
PW
MN/
A
Ove
rcur
rent
, Ove
rvol
tage
, Un
derv
olta
ge, O
verte
mpe
ratu
re,
48V
Load
Dum
p Pr
otec
tion,
Sho
rt Ci
rcui
t, Sh
oot T
hrou
gh
–40
to +
150
Slee
p M
ode,
LIN
Tra
nsce
iver,
AZ O
utpu
t, Ad
j. Bu
ck R
egul
ator
, LDO
, Op
Amp,
O
verc
urre
nt C
ompa
rato
r, Fa
ult O
utpu
t, Th
erm
al W
arni
ng, S
elect
able
Dead
Tim
e an
d Bl
ankin
g Ti
me
40-p
in 5
× 5
QFN
, 48
-pin
7 ×
7 T
QFP
MTS
62C
19A/
MTS
2916
A
One
Bip
olar
St
eppe
r Mot
or o
r Tw
o DC
Mot
ors
10 to
40
Inte
rnal
750
Dire
ct P
WM
Inpu
t, Cu
rrent
Lim
it Co
ntro
l, M
icros
tepp
ing
NoO
verte
mpe
ratu
re, U
nder
Vol
tage
–40
to +
105
Dual
Full-
Brid
ge M
otor
Driv
er fo
r Ste
pper
Mot
ors,
Pin
Com
patib
le w
ith A
llegr
o 62
1924
-pin
SO
IC
MC
P806
33-
Phas
e Br
ushl
ess
Mot
or2
to 1
4In
tern
al75
0Se
nsor
less
Sinu
soid
alFr
eque
ncy
Gen
erat
or
Ove
rtem
pera
ture
, Mot
or
Lock
-up,
Ove
rcur
rent
, O
verv
olta
ge–4
0 to
+12
53-
Phas
e BL
DC 1
80° S
inus
oida
l Sen
sorle
ss F
an M
otor
Driv
er, O
verc
urre
nt
limita
tion,
Out
put S
witc
hing
Fre
quen
cy a
t 23
kHz
Ther
mall
y En
hanc
ed 8
-pin
4
× 4
DFN
MTD
650X
3-Ph
ase
Brus
hles
s M
otor
2 to
14
(5,5
)In
tern
al50
0-80
0Se
nsor
less
Sinu
soid
alFr
eque
ncy
Gen
erat
or
Ove
rtem
pera
ture
, Mot
or
Lock
-up,
Ove
rcur
rent
, O
verv
olta
ge
–30
(–40
) to
+9
5 (1
25)
3-Ph
ase
BLDC
180
° Sin
usoi
dal S
enso
rless
Driv
e, D
irect
ion
Cont
rol,
Prog
ram
mab
le BE
MF
Coeffi
cient
Ran
ge, 2
0 kH
z+ O
utpu
t Sw
itchi
ng F
requ
ency
, Pr
ogra
mm
able
Star
t-up
RPM
and
Slew
Rat
e, S
elect
able
Star
t-up
Stre
ngth
and
Ph
ase
Targ
et R
egul
atio
n
SOP,
DFN
, QFN
Focus Product Selector Guide 33
Ultr
asou
nd:
Hig
h-Vo
ltage
Ana
log
Mul
tiple
xers
Part
##
of C
h. a
nd C
onfig
urat
ion
Blee
d R
esis
tor
Vpp-
Vnn
Ro
n (Ω
)C
sg O
n/O
ff (p
F)Is
w (A
)Fe
atur
esPa
ckag
es
HV2
0220
8 SP
STNo
200V
2238
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35V
–12V
Log
ic In
put,
5 M
Hz c
lock
freq
uenc
y48
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d LQ
FP, 2
8-Le
ad P
LCC
HV2
096
× 2:
1 M
uxYe
s20
0V22
38/1
23
5V–1
2V L
ogic
Inpu
t, 5
MHz
clo
ck fr
eque
ncy
48-L
ead
LQFP
HV2
0822
2 Ba
nks
of 8
cha
nnel
No22
0V22
38/1
23
5V–1
2V L
ogic
Inpu
t, 5
MHz
clo
ck fr
eque
ncy
48-L
ead
LQFP
HV2
601
16 S
PST
No20
0V22
38/1
23
3.3V
–5V
Logi
c in
put,
20 M
Hz c
lock
freq
uenc
y48
-Lea
d LQ
FP, 4
2-Ba
ll Bum
ped
Die
(BD)
HV2
701
16 S
PST
No20
0V22
38/1
23
3.3V
–5V
Logi
c in
put,
20 M
Hz c
lock
freq
uenc
y48
-Lea
d LQ
FP, 4
2-Ba
ll Bum
ped
Die
(BD)
HV2
605
16 S
PST
No20
0V22
13/1
03
3.3V
–5V
Logi
c in
put,
20 M
Hz c
lock
freq
uenc
y48
-Lea
d LQ
FP, 4
2-Ba
ll Bum
ped
Die
(BD)
HV2
705
16 S
PST
Yes
200V
2213
/10
33.
3V–5
V Lo
gic
inpu
t, 20
MHz
clo
ck fr
eque
ncy
48-L
ead
LQFP
, 42-
Ball B
umpe
d Di
e (B
D)
HV2
803
32 S
PST
No±6
V10
27/9
33.
3V In
put L
ogic,
66
MHz
Clo
ck F
requ
ency
132-
ball T
FBG
A 12
ⅹ 1
2 m
m
HV2
903
32 S
PST
Yes-
2±6
V10
27/9
33.
3V In
put L
ogic,
66
MHz
Clo
ck F
requ
ency
132-
ball T
FBG
A 12
ⅹ 1
2 m
m
HV2
904
32 S
PST
Yes-
1±6
V10
27/9
33.
3V In
put L
ogic,
66
MHz
Clo
ck F
requ
ency
132-
ball T
FBG
A 12
ⅹ 1
2 m
m
HV2
662
24 S
PST
No20
0V22
12/9
23.
3V–5
V Lo
gic
inpu
t, 20
MHz
clo
ck fr
eque
ncy
64-B
all V
FBG
A
HV2
762
24 S
PST
Yes
200V
2212
/92
3.3V
–5V
Logi
c in
put,
20 M
Hz c
lock
freq
uenc
y64
-Ball
VFB
GA
HV2
801
16 ×
2:1
Mux
No20
0V22
23/9
33.
3V–5
V Lo
gic
inpu
t, 20
MHz
clo
ck fr
eque
ncy
64-L
ead
QFN
HV2
901
16 ×
2:1
Mux
Yes
200V
2223
/93
3.3V
–5V
Logi
c in
put,
20 M
Hz c
lock
freq
uenc
y64
-Lea
d Q
FN
HV2
802
32 S
PST
No20
0V22
13/1
03
3.3V
–5V
Logi
c in
put,
20 M
Hz c
lock
freq
uenc
y9
× 9
VFBG
A
HV2
902
32 S
PST
Yes
200V
2213
/10
33.
3V–5
V Lo
gic
inpu
t, 20
MHz
clo
ck fr
eque
ncy
9 ×
9 VF
BGA
Osc
illat
ors:
Ultr
a-Lo
w J
itter
Prod
uct
Out
put F
requ
ency
(MH
z)O
utpu
t Log
icIn
put F
unct
ion
Freq
uenc
y St
abili
ty (p
pm)
Tem
pera
ture
Ran
ge (˚
C)
Supp
ly V
olta
ge (V
)Ph
ase
Noi
se (p
s R
MS)
Pack
age
MX5
710
to 8
60LV
CMO
S, L
VPEC
L, L
VDS,
HCS
LO
E on
Pin
1 or
OE
on p
in2
±50
–40
to 8
52.
375
to 3
.63
0.16
(12k
–20M
)7.
0 x
5.0
mm
6-p
inM
X55
10 to
860
LVCM
OS,
LVP
ECL,
LVD
S, H
CSL
OE
on P
in1
or O
E on
pin
3±5
0–4
0 to
85
2.37
5 to
3.6
30.
16 (1
2k–2
0M)
5.0
x 3.
2 m
m 6
-pin
MX5
74BB
D32
2M26
532
2.26
5625
HCSL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.14
3/0.
098
7.0
x 5.
0 m
m 6
-pin
MX5
55AN
R133
M33
313
3.33
33LV
PECL
OE
on p
in2
±50
–40
to 8
52.
375
to 3
.63
0.14
3/0.
092
5.0
x 3.
2 m
m 6
-pin
MX5
53BB
A156
M25
015
6.25
LVPE
CLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
165/
0.11
5.0
x 3.
2 m
m 6
-pin
MX5
53BB
B156
M25
015
6.25
LVDS
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.16
2/0.
093
5.0
x 3.
2 m
m 6
-pin
MX5
73BB
A156
M25
015
6.25
LVPE
CLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
165/
0.11
7.0
x 5.
0 m
m 6
-pin
MX5
53BB
A312
M50
031
2.5
LVPE
CLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
155/
0.10
85.
0 x
3.2
mm
6-p
inM
X575
ABA2
5M00
0025
LVPE
CLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
152/
0.08
87.
0 x
5.0
mm
6-p
inM
X573
LBB1
48M
500
148.
5LV
DSO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
149/
0.09
67.
0 x
5.0
mm
6-p
inM
X555
ABD
100M
000
100
HCSL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.22
/0.1
5.0
x 3.
2 m
m 6
-pin
MX5
73N
BA62
2M08
062
2.08
LVPE
CLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
148/
0.10
37.
0 x
5.0
mm
6-p
inM
X573
BBB1
56M
250
156.
25LV
DSO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
162/
0.09
35.
0 x
3.2
mm
6-p
inM
X554
BBD
322M
265
322.
2656
25HC
SLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
154/
0.1
5.0
x 3.
2 m
m 6
-pin
MX5
74BB
D32
2M26
532
2.26
5625
HCSL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.15
4/0.
17.
0 x
5.0
mm
6-p
inM
X573
BBA3
12M
500
312.
5LV
PECL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.14
8/0.
103
7.0
x 5.
0 m
m 6
-pin
MX5
73BB
B312
M50
031
2.5
LVDS
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.17
5/0.
087.
0 x
5.0
mm
6-p
inM
X555
ABA2
5M00
0025
LVPE
CLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
152/
0.08
5.0
x 3.
2 m
m 6
-pin
MX5
75AB
B200
M00
020
0LV
DSO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
22/0
.17.
0 x
5.0
mm
6-p
inM
X555
ABB2
00M
000
200
LVDS
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.22
/0.1
5.0
x 3.
2 m
m 6
-pin
MX5
75AB
C20
0M00
020
0LV
CMO
SO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
128/
0.08
97.
0 x
5.0
mm
6-p
inM
X575
ABC
125M
000
125
LVCM
OS
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.12
8/0.
089
7.0
x 5.
0 m
m 6
-pin
MX5
53AB
B212
M50
021
2.5
LVDS
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.17
5/0.
085.
0 x
3.2
mm
6-p
inM
X573
ABA2
12M
500
212.
5LV
PECL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.17
5/0.
087.
0 x
5.0
mm
6-p
in
www.microchip.com34
Osc
illat
ors:
Ultr
a-Lo
w J
itter
Prod
uct
Out
put F
requ
ency
(MH
z)O
utpu
t Log
icIn
put F
unct
ion
Freq
uenc
y St
abili
ty (p
pm)
Tem
pera
ture
Ran
ge (˚
C)
Supp
ly V
olta
ge (V
)Ph
ase
Noi
se (p
s R
MS)
Pack
age
MX5
55AB
A150
M00
015
0LV
PECL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.14
3/0.
098
5.0
x 3.
2 m
m 6
-pin
MX5
75AB
D10
0M00
010
0HC
SLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
22/0
.17.
0 x
5.0
mm
6-p
inM
X555
ABD
100M
000
100
HCSL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.22
/0.1
5.0
x 3.
2 m
m 6
-pin
MX5
75AB
A100
M00
010
0LV
PECL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.15
2, 0
.112
7.0
x 5.
0 m
m 6
-pin
MX5
55AB
C50
M00
0050
LVCM
OS
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.14
2, 0
.15.
0 x
3.2
mm
6-p
inM
X575
ABC
50M
0000
50LV
CMO
SO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
142,
0.1
7.0
x 5.
0 m
m 6
-pin
MX5
55AB
A50M
0000
50LV
PECL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.14
2, 0
.101
5.0
x 3.
2 m
m 6
-pin
MX5
75AB
A50M
0000
50LV
PECL
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.14
2, 0
.101
7.0
x 5.
0 m
m 6
-pin
MX5
55AB
C25
M00
0025
LVCM
OS
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.13
1, 0
.077
5.0
x 3.
2 m
m 6
-pin
MX5
75AB
C25
M00
0025
LVCM
OS
OE
on p
in1
±50
–40
to 8
52.
375
to 3
.63
0.13
1, 0
.077
7.0
x 5.
0 m
m 6
-pin
MX5
74BB
F644
M53
164
4.53
125
LVPE
CLO
E on
pin
1±5
0–4
0 to
85
2.37
5 to
3.6
30.
139,
0.1
017.
0 x
5.0
mm
6-p
in
Clo
ck a
nd D
ata
Dis
trib
utio
n: B
uffer
s
Product
Buffer Type
Fanout
Input MUX
Input Type
EEPROM
Termination
Output Type
Supply Voltage (V)
Output Frequency (Max) (MHz)
Host BUS
Output Data Rate (Max) (Gbps)
Propagation Delay (Max) (ps)
Within Device Skew (Max) (ps)
Output Enable
Runt Pulse Eliminator (RPE)
Fail-Safe Input (FSI)
Packages
PL12
3-02
NFa
nout
1:2
LVCM
OS
LVCM
OS
1.8/
2.5/
3.3
200
50
0
6/DF
NPL
123-
05Ze
ro D
elay
1:5
LVCM
OS
LVCM
OS
3.3
100/
134
250
8/SO
IC
PL12
3-09
Zero
Dela
y1:
9LV
CMO
SLV
CMO
S3.
310
0/13
425
016
/SO
IC 1
6/TS
SOP
PL12
3E-0
5Ze
ro D
elay
1:5
LVCM
OS
LVCM
OS
2.5/
3.3
220/
167/
200/
134
8/
SOIC
PL12
3E-0
9Ze
ro D
elay
1:9
LVCM
OS
LVCM
OS
2.5/
3.3
220/
167/
200/
134
16
/SO
ICPL
133-
21Fa
nout
1:2
LVCM
OS/
Sine
Wav
eLV
CMO
S1.
8/2.
5/3.
315
0
500
6/
UDFN
PL13
3-27
Fano
ut1:
2LV
CMO
S/Si
ne W
ave
LVCM
OS
1.8/
2.5/
3.3
150
50
0
6/UD
FNPL
133-
37Fa
nout
1:3
LVCM
OS/
Sine
Wav
eLV
CMO
S1.
8/2.
5/3.
315
0
250
6/
SOT-
23
PL13
3-47
Fano
ut1:
4LV
CMO
SLV
CMO
S2.
5/3.
315
092
0025
0
8/SO
IC
150m
ilPL
133-
67Fa
nout
1:6
LVCM
OS
LVCM
OS
2.5/
3.3
150
9200
250
16
/TSS
OP
PL13
3-97
Fano
ut1:
9LV
CMO
SLV
CMO
S2.
5/3.
315
092
0025
016
/QFN
PL13
3-97
Fano
ut1:
9LV
CMO
SLV
CMO
S1.
8/2.
5/3.
30.
1592
0025
0Ye
s
16
/VQ
FNPL
135-
27Fa
nout
1:2
Crys
tal O
scilla
tor
LVCM
OS
1.8/
2.5/
3.3
40
500
6/
UDFN
PL13
5-37
Fano
ut1:
3Cr
ysta
l Osc
illato
rLV
CMO
S1.
8/2.
5/3.
340
25
0
8/SO
IC
150m
ilPL
135-
47Fa
nout
1:4
Crys
tal
LVCM
OS
1.8/
2.5/
3.3
0.04
25
0Ye
s
16
/TSS
OP
PL13
5-67
Fano
ut1:
6Cr
ysta
lLV
CMO
S1.
8/2.
5/3.
30.
04
250
Yes
16/W
QFN
PL13
8-48
Fano
ut1:
42:
1LV
DS/L
VPEC
L/LV
HSTL
/SS
TL/H
CSL/
LVCM
OS
LVPE
CL2.
5/3.
380
089
037
16
/QFN
and
20
/TSS
OP
SY10
0E22
2LFa
nout
1:15
2:1
LVEC
L/LV
PECL
LVPE
CL3.
315
0015
2050
52/L
QFP
SY10
0EL1
1VFa
nout
1:2
ECL
ECL
3.3/
580
036
520
8/SO
ICSY
100E
L14V
Fano
ut1:
52:
1EC
L/PE
CLPE
CL3.
3/5
880
50Ye
s20
/SO
ICSY
100E
P111
UFa
nout
1:10
2:1
LVPE
CL/L
VECL
/HST
LPE
CL2.
5/3.
330
0040
025
32/T
QFP
SY10
0EP1
1UFa
nout
1:2
LVPE
CL/P
ECL/
ECL
PECL
2.5/
3.3/
53
300
208/
MSO
P 8/
SOIC
SY10
0EP1
4UFa
nout
1:5
2:1
PECL
, LVP
ECL,
ECL
, HST
LEC
L2.
5/3.
3/5
260
025
Yes
20/T
SSO
P
SY10
0EP1
5VFa
nout
1:4
2:1
PECL
, LVP
ECL,
ECL
, HST
LLV
PECL
2.5/
3.3/
52.
542
525
Yes
16/T
SSO
P 32
/TQ
FP
SY10
EP11
UFa
nout
1:2
LVPE
CL/P
ECL/
ECL
PECL
2.5/
3.3/
53
300
208/
MSO
P 8/
SOIC
SY54
020A
RFa
nout
1:4
ANY
CML
2.5
3.2
3.2
400
20Ye
s16
/MLF
SY56
011R
Fano
ut1:
2AN
YCM
L2.
54.
56.
428
015
16/ Q
FNSY
5602
0RFa
nout
1:4
ANY
CML
2.5
4.5
6.4
280
15Ye
s16
/ QFN
SY58
011U
Fano
ut1:
2AN
YCM
L2.
5/3.
37
10.7
250
1516
/QFN
Focus Product Selector Guide 35
Clo
ck a
nd D
ata
Dis
trib
utio
n: B
uffer
s
Product
Buffer Type
Fanout
Input MUX
Input Type
EEPROM
Termination
Output Type
Supply Voltage (V)
Output Frequency (Max) (MHz)
Host BUS
Output Data Rate (Max) (Gbps)
Propagation Delay (Max) (ps)
Within Device Skew (Max) (ps)
Output Enable
Runt Pulse Eliminator (RPE)
Fail-Safe Input (FSI)
Packages
SY58
012U
Fano
ut1:
2AN
YLV
PECL
2.5/
3.3
55
260
1516
/MLF
SY58
020U
Fano
ut1:
4AN
YCM
L2.
5/3.
36
250
1516
/QFN
SY58
021U
Fano
ut1:
4AN
YLV
PECL
2.5/
3.3
45
300
1516
/QFN
SY58
031U
Fano
ut1:
8AN
YCM
L2.
5/3.
35
270
2016
/QFN
SY58
032U
Fano
ut1:
8AN
YLV
PECL
2.5/
3.3
433
020
32/M
LFSY
5803
5UFa
nout
1:6
2:1
ANY
LVPE
CL2.
5/3.
34.
523
020
32/M
LFSY
5860
6UFa
nout
1:2
ANY
CML
2.5/
3.3
2.5
4.25
400
15Ye
s16
/QFN
SY58
607U
Fano
ut1:
2AN
YLV
PECL
2.5/
3.3
2.5
3.2
450
20Ye
s16
/QFN
SY58
608U
Fano
ut1:
2AN
YLV
DS2.
52
3.2
420
20Ye
s16
/QFN
SY75
572L
PCIe
Fan
out
1:2
2:1
HCSL
/LVD
SHC
SL3.
326
750
Yes
16/V
QFN
SY75
576L
PCIe
Fan
out
1:4
2:1
HCSL
/LVD
SHC
SL/L
VDS
3.3
267
50Ye
s20
/TSS
OP
SY89
112U
Fano
ut1:
122:
1AN
YLV
PECL
2.5/
3.3
355
025
44/Q
FN
SY89
311U
Fano
ut1:
2EC
L/PE
CL/L
VPEC
L/LV
ECL
ECL/
PECL
/LV
PECL
/LV
ECL
2.5/
3.3/
53
300
208/
MLF
SY89
467U
Fano
ut1:
202:
1AN
YLV
PECL
2.5/
3.3
1.5
1200
20Ye
s64
/TQ
FPSY
8946
8UFa
nout
1:20
2:1
ANY
LVDS
2.5
1.5
1200
25Ye
s64
/TQ
FPSY
8971
32L
Link
Rep
licat
or1:
22:
1LV
PECL
LVPE
CL3.
30.
81.
540
00
Yes
28/T
SSO
P
SY89
830U
Fano
ut1:
42:
1EC
L/PE
CL/L
VPEC
L/LV
ECL
ECL/
PECL
/LV
PECL
/LV
ECL
2.5/
3.3/
52.
545
025
16
/TSS
OP
SY89
831U
Fano
ut1:
4AN
YLV
PECL
2.5/
3.3
239
020
16
/VQ
FNSY
8983
2UFa
nout
1:4
ANY
LVDS
2.5
257
020
16
/VQ
FNSY
8983
3AL
Fano
ut1:
4AN
YLV
DS3.
32
600
20
16/V
QFN
SY89
833L
Fano
ut1:
4AN
YLV
DS3.
32
600
20
16/V
QFN
SY89
835U
Fano
ut1:
2LV
DSLV
DS2.
53.
22
500
20Ye
s8/
MLF
SY89
837U
Fano
ut1:
82:
1AN
YLV
PECL
2.5/
3.3
1.5
975
40
Yes
Yes
32/V
QFN
SY89
838U
Fano
ut1:
82:
1AN
YLV
DS2.
51.
595
040
Ye
sYe
s32
/VQ
FNSY
8984
6UFa
nout
1:5
2:1
ANY
LVPE
CL2.
5/3.
31.
590
020
Yes
32/V
QFN
SY89
847U
Fano
ut1:
52:
1AN
YLV
DS2.
51.
510
0020
Yes
32/V
QFN
SY89
8530
UFa
nout
1:16
LVDS
/LVP
ECL/
LVHS
TL/
SSTL
/HCS
LLV
PECL
3.3
0.5
2000
50
48/T
QFP
SY89
8535
XLFa
nout
1:4
2:1
XTAL
/LVC
MO
S/LV
TTL
LVPE
CL3.
30.
2417
5030
20
/TSS
OP
SY89
854U
Fano
ut1:
4AN
YLV
PECL
2.5/
3.3
3.5
340
20
16/V
QFN
ZL40
200
Fano
ut1:
21:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
PECL
2.5/
3.3
750
16/Q
FNZL
4020
1Fa
nout
1:2
1:1
LVPE
CL, L
VDS,
HCS
L, C
ML
Inte
rnal
LVPE
CL2.
5/3.
375
016
/QFN
ZL40
202
Fano
ut1:
41:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
PECL
2.5/
3.3
750
16/Q
FNZL
4020
3Fa
nout
1:4
1:1
LVPE
CL, L
VDS,
HCS
L, C
ML
Inte
rnal
LVPE
CL2.
5/3.
375
016
/QFN
ZL40
204
Fano
ut1:
61:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
PECL
2.5/
3.3
750
32/Q
FNZL
4020
5Fa
nout
1:6
1:1
LVPE
CL, L
VDS,
HCS
L, C
ML
Inte
rnal
LVPE
CL2.
5/3.
375
032
/QFN
ZL40
206
Fano
ut1:
81:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
PECL
2.5/
3.3
750
32/Q
FNZL
4020
7Fa
nout
1:8
1:1
LVPE
CL, L
VDS,
HCS
L, C
ML
Inte
rnal
LVPE
CL2.
5/3.
375
032
/QFN
ZL40
208
Fano
ut1:
62:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
PECL
2.5/
3.3
750
32/Q
FNZL
4020
9Fa
nout
1:6
2:1
LVPE
CL, L
VDS,
HCS
L, C
ML
Inte
rnal
LVPE
CL2.
5/3.
375
032
/QFN
www.microchip.com36
Clo
ck a
nd D
ata
Dis
trib
utio
n: B
uffer
s
Product
Buffer Type
Fanout
Input MUX
Input Type
EEPROM
Termination
Output Type
Supply Voltage (V)
Output Frequency (Max) (MHz)
Host BUS
Output Data Rate (Max) (Gbps)
Propagation Delay (Max) (ps)
Within Device Skew (Max) (ps)
Output Enable
Runt Pulse Eliminator (RPE)
Fail-Safe Input (FSI)
Packages
ZL40
210
Fano
ut1:
82:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
PECL
2.5/
3.3
750
32/Q
FNZL
4021
1Fa
nout
1:8
2:1
LVPE
CL, L
VDS,
HCS
L, C
ML
Inte
rnal
LVPE
CL2.
5/3.
375
032
/QFN
ZL40
212
Fano
ut1:
21:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
DS2.
5/3.
375
016
/QFN
ZL40
213
Fano
ut1:
21:
1LV
PECL
, LVD
S, H
CSL,
CM
LIn
tern
alLV
DS2.
5/3.
375
016
/QFN
ZL40
214
Fano
ut1:
41:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
DS2.
5/3.
375
016
/QFN
ZL40
215
Fano
ut1:
41:
1LV
PECL
, LVD
S, H
CSL,
CM
LIn
tern
alLV
DS2.
5/3.
375
016
/QFN
ZL40
216
Fano
ut1:
61:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
217
Fano
ut1:
61:
1LV
PECL
, LVD
S, H
CSL,
CM
LIn
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
218
Fano
ut1:
81:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
219
Fano
ut1:
81:
1LV
PECL
, LVD
S, H
CSL,
CM
LIn
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
220
Fano
ut1:
62:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
221
Fano
ut1:
62:
1LV
PECL
, LVD
S, H
CSL,
CM
LIn
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
222
Fano
ut1:
82:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
223
Fano
ut1:
82:
1LV
PECL
, LVD
S, H
CSL,
CM
LIn
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
224
Fano
ut1:
82:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
PECL
2.5/
3.3
750
32/Q
FNZL
4022
5Fa
nout
1:8
2:1
LVPE
CL, L
VDS,
HCS
L, C
ML
Inte
rnal
LVPE
CL2.
5/3.
375
032
/QFN
ZL40
226
Fano
ut1:
81:
1LV
PECL
, LVD
S, H
CSL,
CM
LEx
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
227
Fano
ut1:
81:
1LV
PECL
, LVD
S, H
CSL,
CM
LIn
tern
alLV
DS2.
5/3.
375
032
/QFN
ZL40
230
Fano
ut1:
102:
1LV
PECL
, HCS
L, L
VDS,
SS
TL, C
ML,
LVC
MO
SLV
PECL
, LV
DS, H
CSL
2.5/
3.3
1600
SPI
YES
48/q
fn
ZL40
231
Fano
ut1:
102:
1LV
PECL
, HCS
L, L
VDS,
SS
TL, C
ML,
LVC
MO
SLV
PECL
, LV
DS, H
CSL
2.5/
3.3
1600
48/q
fn
ZL40
234
Fano
ut1:
42:
1LV
PECL
, HCS
L, L
VDS,
SS
TL, C
ML,
LVC
MO
SLV
PECL
, LV
DS, H
CSL
2.5/
3.3
1600
32/q
fn
ZL40
235
Fano
ut1:
42:
1LV
PECL
, HCS
L, L
VDS,
SS
TL, C
ML,
LVC
MO
SLV
PECL
, LV
DS, H
CSL
2.5/
3.3
1600
SPI
YES
32/q
fn
ZL40
240
Fano
ut1:
102:
1LV
PECL
, HCS
L, L
VDS,
SS
TL, C
ML,
LVC
MO
SLV
CMO
S2.
5/3.
325
0SP
IYE
S32
/qfn
ZL40
241
Fano
ut1:
102:
1LV
PECL
, HCS
L, L
VDS,
SS
TL, C
ML,
LVC
MO
SLV
CMO
S2.
5/3.
325
032
/qfn
ZL40
260
Fano
ut1:
102:
1LV
PECL
, HCS
L, L
VDS,
SS
TL, C
ML,
LVC
MO
SLV
PECL
2.5/
3.3
1600
32/q
fn
ZL40
250
Prog
ram
mab
le Fa
nout
1:6
3:1
LVPE
CL, H
CSL,
LVD
S,
SSTL
, CM
L, L
VCM
OS
Exte
rnal
LVDS
, LV
PECL
, HC
SL,
CMO
S, H
STL
2.5/
3.3
1000
SPI/
I²CYE
S56
/QFN
ZL40
251
Prog
ram
mab
le Fa
nout
1:6
3:1
LVPE
CL, H
CSL,
LVD
S,
SSTL
, CM
L, L
VCM
OS
Inte
rnal
LVDS
, LV
PECL
, HC
SL,
CMO
S, H
STL
2.5/
3.3
1000
SPI/
I²CYE
S56
/QFN
ZL40
252
Prog
ram
mab
le Fa
nout
1:10
3:1
LVPE
CL, H
CSL,
LVD
S,
SSTL
, CM
L, L
VCM
OS
Exte
rnal
LVDS
, LV
PECL
, HC
SL,
CMO
S, H
STL
2.5/
3.3
1000
SPI/
I²CYE
S56
/QFN
ZL40
253
Prog
ram
mab
le Fa
nout
1:10
3:1
LVPE
CL, H
CSL,
LVD
S,
SSTL
, CM
L, L
VCM
OS
Inte
rnal
LVDS
, LV
PECL
, HC
SL,
CMO
S, H
STL
2.5/
3.3
1000
SPI/
I²CYE
S56
/QFN
ZL40
255
Prog
ram
mab
le Fa
nout
1:10
3:1
LVPE
CL, H
CSL,
LVD
S,
SSTL
, CM
L, L
VCM
OS
Inte
rnal
CML
2.5/
3.3
1000
SPI/
I²CYE
S32
/QFN
Focus Product Selector Guide 37
Clo
ck a
nd D
ata
Dis
trib
utio
n: B
uffer
s
Product
Buffer Type
Fanout
Input MUX
Input Type
EEPROM
Termination
Output Type
Supply Voltage (V)
Output Frequency (Max) (MHz)
Host BUS
Output Data Rate (Max) (Gbps)
Propagation Delay (Max) (ps)
Within Device Skew (Max) (ps)
Output Enable
Runt Pulse Eliminator (RPE)
Fail-Safe Input (FSI)
Packages
ZL40
292
DB20
00/P
CIe
Fano
ut1:
201:
1HC
SLLP
HCSL
3.3
250
YES
72/Q
FN
ZL40
293
PCIe
Fan
out
1:20
1:1
HCSL
LPHC
SL3.
325
0YE
S72
/QFN
ZL40
294
DB20
00/P
CIe
Fano
ut1:
201:
1HC
SLLP
HCSL
3.3
250
YES
80/G
QFN
ZL40
295
PCIe
Fan
out
1:20
1:1
HCSL
LPHC
SL3.
325
0YE
S80
/GQ
FN
ZL40
262
PCIe
Fan
out
1:1
1:2
HCSL
HCSL
400
YES
20/Q
FNZL
4026
4PC
Ie F
anou
t1:
11:
4HC
SLHC
SL40
0YE
S20
/QFN
Tim
ing
Prod
ucts
: Rea
l-Tim
e C
lock
/Cal
enda
r (RT
CC
)
Bus
Prod
uct
Pins
Tim
ing
Feat
ures
Mem
ory
Pow
er
Uni
que
Feat
ures
(2)
Pack
ages
Dig
ital T
rimm
ing
(Adj
./Ran
ge)
Alar
m
Setti
ngs
WD
TO
utpu
tsSR
AM
(Byt
es)
EEPR
OM
(K
Bits
)Pr
otec
ted
EEPR
OM
(bits
)M
in V
ccM
in V
bat
I²C
MC
P794
0M8
±127
ppm
1 se
c.–
IRQ
/CLK
640
01.
8–
–SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, TDF
N (M
NY),
PDIP
(P)
MC
P794
0N8
±127
ppm
1 se
c.–
IRQ
/CLK
640
01.
81.
3Po
wer
Fail
Tim
esta
mp
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S), T
DFN
(MNY
), PD
IP (P
)
MC
P794
0x8
±127
ppm
1 se
c.–
IRQ
/CLK
640
641.
81.
3Po
wer
Fail
Tim
esta
mp
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S), T
DFN
(MNY
)
MC
P794
1x8
±127
ppm
1 se
c.–
IRQ
/CLK
641
641.
81.
3Po
wer
Fail
Tim
esta
mp
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S), T
DFN
(MNY
)
MC
P795
1x10
±255
ppm
0.01
sec
.–
IRQ
/CLK
641
128
1.8
1.3
Pow
er F
ail T
imes
tam
pSO
IC (S
L), T
SSO
P (S
T)
SPI
MC
P795
2x10
±255
ppm
0.01
sec
.–
IRQ
/CLK
642
128
1.8
1.3
Pow
er F
ail T
imes
tam
pM
SOP
(MS)
, TDF
N (M
N)
MC
P795
W1x
14±2
55 p
pm0.
01 s
ec.
YIR
Q/C
LK/W
DT R
ST64
112
81.
81.
3Po
wer
Fail
Tim
esta
mp,
Eve
nt D
etec
ts (×
2)
SOIC
(SL)
, TSS
OP
(ST)
MC
P795
W2x
14±2
55 p
pm0.
01 s
ec.
YIR
Q/C
LK/W
DT R
ST64
212
81.
81.
3Po
wer
Fail
Tim
esta
mp,
Eve
nt D
etec
ts (×
2)
SOIC
(SL)
, TSS
OP
(ST)
www.microchip.com38
Clo
ck a
nd D
ata
Dis
trib
utio
n: D
ivid
ers
Prod
uct
Div
ide
byM
UX:
Fan
out
Inpu
t Typ
eO
utpu
t Typ
eSu
pply
Vol
tage
(V)
Out
put F
requ
ency
(M
ax) (
GH
z)Pr
opag
atio
n D
elay
(M
ax) (
ps)
With
in D
evic
e Sk
ew (M
ax) (
ps)
Inte
rnal
Te
rmin
atio
nO
utpu
t Ena
ble
Fail-
Safe
Inpu
t (F
SI)
Pack
ages
SY89
872U
2, 4
, 8, 1
61:
2 A
NY L
VDS
2.5
V2
750
15Ye
sYe
s
16/
QFN
SY89
876L
1, 2
, 4, 8
, 16
1:2
ANY
LVD
S 3
.3V
287
015
Yes
16/
QFN
SY89
875U
1, 2
, 4, 8
, 16
1:2
ANY
LVD
S 2
.5V
287
015
Yes
Yes
1
6/Q
FN
SY89
871U
MG
2, 4
, 8, 1
61:
3 A
NYLV
PECL
2.5/
3.3
3.2
670
15Ye
sYe
s
16/
QFN
SY10
0EP3
2V2
1:1
ECL
ECL
5/3
.34
440
8/
MSO
P, 8
/SO
IC
SY10
0EL3
34
1:1
ECL
ECL
3.3
3.8
630
8
/SO
IC
SY89
874U
1, 2
, 4, 8
, 16
1:2
ANY
LVP
ECL
2.5
/3.3
V2.
579
015
Yes
Yes
1
6/Q
FN
SY89
873L
2, 4
, 8, 1
61:
2 A
NY L
VDS
3.3
V2
800
15Ye
sYe
s
16/
QFN
SY89
874A
U1,
2, 4
, 8, 1
61:
2 A
NY L
VPEC
L 2
.5/3
.3V
2.5
570
15Ye
sYe
s
16/
QFN
SY89
200U
1, 2
, 41:
3 A
NY L
VDS
2.5
1.5
900
25Ye
s
3
2/Q
FN
SY89
202U
1, 2
, 41:
8 A
NY L
VPEC
L 2
.5/3
.31.
593
025
Yes
Yes
3
2/VQ
FN
SY89
228U
3, 5
1:1
ANY
LVP
ECL
2.5
/3.3
V1
1500
Yes
Y
es16
/QFN
SY10
0S83
4L1,
2, 4
or 2
, 4, 8
1:1
ECL
/PEC
L E
CL/P
ECL
3.3
1200
50Ye
s
16/
SOIC
SY89
230U
3, 5
1:1
ANY
LVP
ECL
2.5
/3.3
V3.
285
0Ye
s
Yes
16/Q
FN
SY10
0EL3
2V2
1:1
LVPE
CLLV
PECL
3.3/
53
630
8/
SOIC
SY10
0EP3
3V4
1:1
ECL
ECL
5/3
.34
500
16/S
OIC
SY10
0EL3
42,
4, 8
1:3
ECL
/PEC
L E
CL/P
ECL
512
0050
Yes
1
6/SO
IC
SY10
0EL3
4L2,
4, 8
1:3
ECL
/PEC
L E
CL/P
ECL
3.3
1200
50Ye
s
16/
SOIC
SY89
218U
1, 2
, 42:
15 A
NY L
VDS
2.5
1.5
1600
35Ye
s
Yes
64/
TQFP
SY89
221U
1, 2
, 42:
15 A
NY L
VPEC
L 2
.5/3
.3V
1.5
1600
35Ye
s
Yes
64/
TQFP
SY89
231U
3, 5
1:1
ANY
LVD
S 2
.5V
3.2
810
Yes
Yes
16/
QFN
Clo
ck a
nd D
ata
Dis
trib
utio
n: D
river
s an
d R
ecei
vers
Prod
uct
Func
tion
Cha
nnel
sFe
atur
eIn
put T
ype
Out
put T
ype
Supp
ly V
olta
ge (V
)O
utpu
t Fre
quen
cy
(Max
) (G
Hz)
Out
put D
ata
Rat
e (M
ax) (
Gbp
s)Pr
opag
atio
n D
elay
(M
ax) (
ps)
Icc
(mA)
Fail
Safe
Inpu
t (F
SI)
Pack
ages
SY89
251V
Rece
iver
Sing
leO
utpu
t Ena
ble
ECL/
LVPE
CLEC
L/LV
PECL
3.3
/5V
380
268/
DFN
SY10
0EL1
6VRe
ceive
rSi
ngle
ECL/
PECL
ECL/
PECL
3.3
/5V
425
268M
SOP/
SOIC
SY58
600U
Drive
r/Rec
eiver
Sing
leIn
tern
al Te
rmin
atio
nAN
YCM
L 2
.5/3
.3V
10.7
722
065
8/M
LF
SY58
603U
Buffe
rSi
ngle
Fail-
Safe
Inpu
t (FS
I)AN
YCM
L 2
.5/3
.3V
4.25
2.5
350
50Ye
s8/
DFN
SY58
605U
Buffe
rSi
ngle
Fail-
Safe
Inpu
t (FS
I)AN
YLV
DS 2
.5V
3.2
242
050
Yes
8/DF
N
SY89
250V
Rece
iver
Sing
leO
utpu
t Ena
ble
LVEC
L/LV
PECL
PECL
3.3
/5V
0.8
380
468/
MLF
SY58
604U
Buffe
rSi
ngle
Fail-
Safe
Inpu
t (FS
I)AN
YLV
PECL
2.5
/3.3
V3.
22.
545
045
Yes
8/DF
N
SY54
016A
RDr
iver/R
eceiv
erSi
ngle
Inte
rnal
Term
inat
ion
ANY
CML
2.5
V3.
23.
228
016
8/M
LF
SY10
0EL1
7Re
ceive
rQ
uad
ECL/
LVPE
CLEC
L/LV
PECL
3.3
/5V
610
2620
/SO
IC
SY58
601U
Drive
r/Rec
eiver
Sing
leIn
tern
al Te
rmin
atio
nAN
YLV
PECL
2.5
/3.3
V5
522
060
8/M
LF
SY54
016R
Drive
r/Rec
eiver
Sing
leFa
il-Sa
fe In
put (
FSI)
ANY
CML
2.5
V2.
542
040
8/M
LF
SY58
016L
Drive
r/Rec
eiver
Sing
leIn
tern
al Te
rmin
atio
nCM
L/PE
CLCM
L 3
.3V
10.7
715
075
16/M
LF
SY58
602U
Drive
r/Rec
eiver
Sing
leIn
tern
al Te
rmin
atio
nAN
YLV
PECL
2.5
/3.3
10.7
722
065
8/Q
FN
SY56
016R
Drive
r/Rec
eiver
Sing
leIn
put E
quali
zatio
nAN
YCM
L 2
.5V
6.4
525
042
10/M
LF
Focus Product Selector Guide 39
Clo
ck a
nd D
ata
Dis
trib
utio
n: T
rans
lato
rs
Prod
uct
No.
of C
hann
els
Cor
e Su
pply
Vol
tage
(V)
Inpu
t Typ
eO
utpu
t Typ
eO
utpu
t Vol
tage
(V)
Out
put F
requ
ency
(M
ax) (
GH
z)Pr
opag
atio
n D
elay
(M
ax) (
ps)
With
in D
evic
e Sk
ew
(Max
) (ps
)Pa
ckag
es
SY89
321L
Sing
le3.
3LV
PECL
/CM
L/LV
DSLV
TTL
3.3
0.27
525
00
8/M
LFSY
100E
LT22
Dual
5TT
LPE
CL2.
5/3.
80.
1560
010
08/
SOIC
SY10
0EPT
21Si
ngle
3.3
LVPE
CLLV
TTL
3.3
0.27
525
0050
08/
MSO
P 8/
SOIC
SY10
0ELT
22L
Dual
3.3
LVTT
LLV
PECL
2.5/
3.9
0.15
600
100
8/SO
ICSY
100E
LT23
LDu
al3.
3LV
PECL
LVTT
L2
0.16
2500
300
8/SO
ICSY
5585
7LDu
al3.
3AN
YLV
PECL
3.3
2.5
400
5010
/MSO
PSY
8932
3LDu
al3.
3LV
PECL
LVTT
L3.
30.
275
250
508/
MLF
SY89
329V
Sing
le3.
3/8
LVTT
LLV
PECL
3.3/
70.
860
0
8/M
LFPL
130-
07Si
ngle
2.5/
3.4
Sine
Wav
e/ L
VCM
OS
LVCM
OS
2.5/
3.4
0.2
16/Q
FN, 8
/TSS
OP,
8/S
OIC
SY10
0EPT
22Du
al3.
3/6
TTL/
LVTT
L/CM
OS/
LVCM
OS
PECL
/LVP
ECL
3.3/
60.
860
050
08/
MSO
P 8/
SOIC
SY89
322V
Dual
3.3/
7LV
TTL
LVPE
CL3.
3/6
0.8
600
100
8/M
LFSY
10/1
00EP
T20
Sing
le3.
3/5
TTL/
LVTT
L/CM
OS/
LVCM
OS
PECL
/LVP
ECL
3.3/
50.
3560
050
08/
MSO
P 8/
SOIC
SY55
855V
Dual
3.3/
6PE
CL/L
VPEC
L/CM
LLV
DS3.
3/5
0.75
700
5010
/MSO
PSY
100E
LT23
Dual
5PE
CLTT
L2.
50.
1635
0030
08/
SOIC
SY10
0EPT
23Du
al3.
3LV
PECL
LVTT
L3.
30.
275
2500
300
8/M
SOP
8/SO
ICSY
8932
7LSi
ngle
3.3
ANY
LVPE
CL3.
32.
540
0
8/Q
FNSY
100E
LT21
LSi
ngle
3.3
LVPE
CLLV
TTL
2.5/
3.7
0.15
2500
8/
SOIC
SY10
0ELT
25Si
ngle
5EC
LTT
L5
0.5
3600
8/
SOIC
SY89
328L
Sing
le3.
3LV
PECL
/LVT
TLLV
TTL/
LVPE
CL3.
30.
275
600
8/
MLF
SY10
0EPT
28Si
ngle
3.3
LVPE
CL/L
VTTL
LVPE
CL/L
VTTL
3.3
0.27
525
00
8/M
SOP
8/SO
ICPL
130-
09Si
ngle
2.5/
3.6
Sine
Wav
e/TT
L/CM
OS/
LVDS
LVDS
2.5/
3.6
1
8/
SOP,
16/Q
FN
Clo
ck a
nd D
ata
Dis
trib
utio
n: M
ultip
lexe
rs
Prod
uct
MU
X:
Fano
utN
o. o
f Cha
nnel
sIn
put T
ype
Out
put T
ype
Supp
ly V
olta
ge (V
)O
utpu
t Fre
quen
cy
(Max
) (G
Hz)
Out
put D
ata
Rat
e (M
ax) (
Gbp
s)Pr
opag
atio
n D
elay
(Max
) (ps
)W
ithin
Dev
ice
Skew
(Max
) (ps
)C
ross
poin
tR
unt P
ulse
El
imin
ator
(RPE
)Fa
il-Sa
fe In
put
(FSI
)Pa
ckag
es
SY58
609U
2:1
Sing
le A
NY C
ML
2.5
/3.3
V3
4.25
450
20
Yes
16/
QFN
SY58
018U
2:1
Sing
le A
NY L
VPEC
L 2
.5/3
.3V
45
240
15
1
6/Q
FNSY
5861
1U2:
1Si
ngle
ANY
LVD
S 2
.5V
2.5
3.2
470
20
Yes
16/
QFN
SY89
474U
2:2
Sing
le A
NY L
VDS
2.5
V2.
52.
547
020
24/
QFN
SY10
0EP5
74:
1Si
ngle
PEC
L/EC
L P
ECL/
ECL
3.3
V/5V
3
520
20/
TSSO
PSY
8954
4U4:
1Si
ngle
ANY
LVD
S 2
.5V
43.
251
020
32/
MLF
SY89
840U
2:1
Sing
le A
NY L
VPEC
L 2
.5/3
.3V
2
880
Yes
Yes
16/
QFN
SY89
841U
2:1
Sing
le A
NY L
VDS
2.5
V2
87
0 Y
es Y
es16
/MLF
SY89
547L
4:2
Sing
le A
NY L
VDS
3.3
V4
3.2
540
20
32
/MLF
SY58
028U
4:2
Sing
le A
NY C
ML
2.5
/3.3
V7
10.7
340
20
32
/MLF
SY58
610U
2:1
Sing
le A
NY L
VPEC
L 2
.5/3
.3V
2.5
3.2
470
20
Yes
16/
QFN
SY58
017U
2:1
Sing
le A
NY C
ML
2.5
/3.3
V7
10.7
240
15
1
6/M
LFSY
5803
8U8:
2Si
ngle
ANY
LVP
ECL
2.5
/3.3
V5
4.5
500
15
4
4/Q
FNSY
100E
P56
2:1
Dual
PEC
L/EC
L P
ECL/
ECL
3.3
V/5V
3
470
100
20/
TSSO
PSY
8985
3U2:
1Du
al A
NY L
VPEC
L 2
.5/3
.3V
2.5
2.5
360
20
3
2/Q
FNSY
8954
5L4:
1Si
ngle
ANY
LVD
S 3
.3V
33.
260
025
32/
MLF
SY56
034A
R2:
6Si
ngle
ANY
CM
L 2
.5V
56.
430
025
Yes
32/
QFN
SY89
859U
8:2
Sing
le A
NY L
VPEC
L 2
.5/3
.3V
2.5
3.5
640
20
4
4/Q
FNSY
8954
3L2:
1Du
al A
NY L
VDS
3.3
V3
3.2
510
25
3
2/M
LFSY
5802
9U4:
2Si
ngle
ANY
LVP
ECL
2.5
/3.3
V4
539
015
32/M
LFSY
8985
5U4:
2Si
ngle
ANY
LVP
ECL
2.5
/3.3
V2.
52.
541
020
32/
QFN
SY89
465U
2:1
Sing
le A
NY L
VDS
2.5
V2
12
0025
Yes
Yes
44/
QFN
SY89
844U
2:2
Sing
leAN
YLV
DS 2
.5V
287
020
Yes
Yes
24/
QFN
SY58
026U
2:1
Dual
ANY
LVP
ECL
2.5
/3.3
V6
531
015
32/M
LF
www.microchip.com40
Clo
ck a
nd D
ata
Dis
trib
utio
n: M
ultip
lexe
rs
Prod
uct
MU
X:
Fano
utN
o. o
f Cha
nnel
sIn
put T
ype
Out
put T
ype
Supp
ly V
olta
ge (V
)O
utpu
t Fre
quen
cy
(Max
) (G
Hz)
Out
put D
ata
Rat
e (M
ax) (
Gbp
s)Pr
opag
atio
n D
elay
(Max
) (ps
)W
ithin
Dev
ice
Skew
(Max
) (ps
)C
ross
poin
tR
unt P
ulse
El
imin
ator
(RPE
)Fa
il-Sa
fe In
put
(FSI
)Pa
ckag
es
SY58
019U
2:1
Sing
le A
NYLV
PECL
2.5
/3.3
V7
10.7
240
15
16
/MLF
SY58
025U
2:1
Dual
ANY
CM
L 2
.5/3
.3V
610
.729
015
32/M
LFSY
5803
0U4:
2Si
ngle
ANY
LVPE
CL 2
.5/3
.3V
710
.734
020
32/M
LF
Clo
ck a
nd D
ata
Dis
trib
utio
n: S
kew
Man
agem
ent
Prod
uct
No.
of
Cha
nnel
sIn
put T
ype
Out
put T
ype
Prop
agat
ion
Del
ay
Res
olut
ion
(Typ
) (ps
/ste
p)Pr
opag
atio
n D
elay
(M
in) (
ns)
Prop
agat
ion
Del
ay
(Max
)(ns)
Fine
Tun
eSu
pply
Vol
tage
(V)
Out
put F
requ
ency
(M
ax) (
GH
z)Pa
ckag
es
SY10
0EP1
95V
Sing
leAN
YEC
L10
2.2
12.2
3.3
/52.
532
/TQ
FPSY
100E
P196
VSi
ngle
ANY
ECL
102.
212
.2Ye
s 3
.3/5
2.5
32/T
QFP
SY55
856U
Dual
CML
CML
500.
350.
72.
5/3.
32.
532
/TQ
FPSY
8929
5USi
ngle
LVPE
CL/L
VTTL
LVPE
CL10
3.2
14.8
2.5/
3.3
1.5
32/T
QFP
32/
VQFN
SY89
296U
Sing
leLV
PECL
/LVT
TLLV
PECL
103.
214
.8Ye
s2.
5/3.
31.
532
/TQ
FP 3
2/VQ
FNSY
8929
7UDu
alAN
YCM
L5
27
3.3
1.6
24/V
QFN
Clo
ck a
nd D
ata
Dis
trib
utio
n: H
igh
Tem
pera
ture
Osc
illat
ors
Part
Fam
ilyTy
peFo
otpr
int (
mm
)O
utpu
t Fre
quen
cy (M
Hz)
Tem
pera
ture
Sta
bilit
y (p
pm)
Tem
pera
ture
Ran
ge (o C
)O
utpu
t Log
icSu
pply
Vol
tage
(V)
HM
-420
1-RT
CM
1Re
al tim
e clo
ck m
odul
e13
x 1
30.
0005
1215
0–4
0 to
200
CMO
S3.
3H
T-RT
C-X
ORe
al tim
e clo
ck X
Om
ultip
le op
tions
, see
spe
cifica
tion
0.03
2768
100
–55
to 2
00CM
OS
1.8,
2.5
, 3.3
, 5H
X-17
1Hi
gh te
mp
OCX
O28
x 3
810
to 2
00.
005
–40
to 1
50CM
OS
5PX
-420
High
tem
p XO
13 x
13
0.5
to 4
020
0–5
5 to
230
CMO
S3.
3, 5
PX-5
70Hi
gh te
mp
XO8.
5 x
80.
5 to
40
200
–55
to 2
30CM
OS
1.8,
2.5
, 3, 3
.3, 5
PX-6
10Hi
gh te
mp
XOØ
9.65
0.03
2768
to 4
020
0–5
5 to
230
CMO
S1.
8, 2
.5, 3
.3, 5
PX-7
02Hi
gh te
mp
XO7
x 5
0.5
to 5
020
0–5
5 to
230
CMO
S1.
8, 2
.5, 3
, 3.3
, 5VX
-400
High
tem
p VC
XO20
x 1
31
to 3
2.76
8–5
5 to
200
CMO
S3.
3, 5
VX-7
08Hi
gh te
mp
VCXO
7 x
52
to 4
0–5
5 to
180
CMO
S3.
3
Clo
ck a
nd D
ata
Dis
trib
utio
n: D
isci
plin
ed O
scill
ator
Mod
ule
Part
Fam
ilyTy
peFo
otpr
int (
mm
)O
utpu
t Sta
ndar
d (M
Hz)
Tem
pera
ture
Sta
bilit
y (p
pb)
Tem
pera
ture
Ran
ge
Min
(o C)
Hol
dove
r 24
hour
s -
cons
tant
tem
pera
ture
us
1pps
RM
S (1
sig
ma)
ac
cura
cy to
UTC
ns
Phas
e N
oise
10
Hz
dBc/
Hz
Phas
e N
oise
10
0 kH
z dB
c/H
z
MD
-013
High
Sta
bility
GNS
SDO
CXO
115
x 60
190.
4–4
0 to
85
1.5
10–1
25-1
45M
D-1
74Lo
w n
oise
GNS
SDO
CXO
50 x
40
105
–40
to 8
515
20–1
35-1
70M
D-1
75Hi
gh S
tabi
lity G
NSSD
OCX
O50
x 4
010
0.4
–40
to 8
51.
510
–125
-145
MD
-261
0-O
CXO
Com
pact
GNS
SDO
CXO
25 x
20
105
–40
to 8
58
20–1
20-1
50
OC
XO
Part
Fam
ilyTy
peFo
otpr
int (
mm
)O
utpu
t Fre
quen
cy
(MH
z)Te
mpe
ratu
re
Stab
ility
(ppb
)Te
mpe
ratu
re
Ran
ge (o C
)Ag
ing
Per Y
ear (
ppb)
Phas
e N
oise
10
Hz
dBc/
Hz
Phas
e N
oise
10
kH
z dB
c/H
zC
arrie
r (M
Hz)
Supp
ly V
olta
ge (V
)
EX-2
19Lo
w P
ower
Spa
ce O
CXO
26 x
24
10 to
120
100
–40
to +
8520
0–9
0–1
4510
3.3,
5EX
-421
Low
pow
er O
CXO
13 x
13
10 to
100
30–4
0 to
+85
100
–125
–165
103.
3, 5
MX-
503
Micr
opro
cess
or c
orre
cted
TCX
O14
x 9
8 to
50
30–4
0 to
+85
250
–93
–154
203.
3, 5
MX-
600
Micr
opro
cess
or c
orre
cted
TCX
O9
x 7
8 to
40
30–4
0 to
+85
250
–100
–153
103.
3O
X-04
3Lo
w g
OCX
O51
x 5
18
to 1
530
–40
to +
8540
–135
–170
1012
, 15
OX-
046
Low
g O
CXO
51 x
51
50 to
250
200
–40
to +
8520
0–1
00–1
7510
012
, 15
OX-
171
High
sta
bility
OCX
O38
x 2
85
to 2
00.
8–4
0 to
+85
15–1
25–1
4510
3.3,
5, 1
2O
X-20
8Hi
gh S
tabi
lity O
CXO
25 x
25
5 to
20
0.8
–40
to +
8520
–125
–155
103.
3, 5
OX-
221
High
Sta
bility
OCX
O25
x 2
210
to 3
0.72
3–4
0 to
+85
60–1
22–1
5110
3.3
OX-
228
High
sta
bility
OCX
O25
x 2
210
to 2
01
–40
to +
8520
03.
3O
X-24
9Sp
ace
OCX
O35
x 2
010
to 1
2010
0–4
0 to
+85
200
–108
–162
505
Focus Product Selector Guide 41
OC
XO
Part
Fam
ilyTy
peFo
otpr
int (
mm
)O
utpu
t Fre
quen
cy
(MH
z)Te
mpe
ratu
re
Stab
ility
(ppb
)Te
mpe
ratu
re
Ran
ge (o C
)Ag
ing
Per Y
ear (
ppb)
Phas
e N
oise
10
Hz
dBc/
Hz
Phas
e N
oise
10
kH
z dB
c/H
zC
arrie
r (M
Hz)
Supp
ly V
olta
ge (V
)
OX-
304
Low
noi
se O
CXO
20 x
20
10 to
20
20–4
0 to
+85
30–1
35–1
7310
12O
X-30
5Lo
w n
oise
OCX
O20
x 2
080
to 1
2020
0–4
0 to
+85
200
–105
–178
100
12O
X-40
115
88 O
CXO
20 x
13
10 to
40
25–4
0 to
+85
100
–121
–152
203.
3, 5
OX-
405
Low
noi
se O
CXO
20 x
13
80 to
120
50–4
0 to
+85
300
–95
–155
100
3.3,
5O
X-50
2St
anda
rd O
CXO
14 x
910
to 4
010
–40
to +
8550
0–9
0–1
5020
3.3
OX-
601
Stan
dard
OCX
O9
x 7
10 to
40
10–4
0 to
+85
500
–90
–150
203.
3
TCXO
Part
Fam
ilyTy
peFo
otpr
int (
mm
)O
utpu
t Fre
quen
cy
(MH
z)Te
mpe
ratu
re S
tabi
lity
–40
to 8
5 pp
mPh
ase
Noi
se
10 H
z dB
c/H
zPh
ase
Noi
se
10 k
Hz
dBc/
Hz
Car
rier (
MH
z)O
utpu
t Log
icSu
pply
Vol
tage
(V)
DO
C20
0103
Spac
e TC
XOm
ultip
le op
tions
, see
spe
cifica
tion
0.3
to 4
252
CMO
S, S
ine
3.3,
5, 1
2D
OC
2071
39Sp
ace
TCXO
35 x
25
12 to
200
2LV
DS3.
3TX
-321
Low
noi
se T
CXO
23 x
18
5 to
50
1–1
16–1
6210
CMO
S3.
3, 5
TX-7
07Lo
w g
TCX
O7
x 5
8 to
52
1–1
00–1
5810
CMO
S, C
lippe
d Si
ne3.
3, 5
TX-7
08Lo
w g
TCX
O7
x 5
96 to
160
1–7
5–1
4015
0CM
OS
3.3
VT-7
06St
ratu
m 3
TCX
O7
x 5
5 to
52
0.2
–102
–154
10CM
OS
3, 3
.3, 5
VT-8
03St
ratu
m 3
TCX
O5
x 3.
210
to 5
20.
28–9
1–1
5026
CMO
S, C
lippe
d Si
ne2.
5, 3
.3, 5
VT-8
20St
anda
rd T
CXO
3.2
x 2.
58
to 4
50.
5–9
1–1
4910
Clip
ped
Sine
1.8,
2.5
, 3, 3
.3VT
-841
Stan
dard
TCX
O2.
5 x
210
to 5
21
–91
–148
19.2
Clip
ped
Sine
1.8,
2.5
, 3.3
VT-8
60St
anda
rd T
CXO
2 x
1.6
13 to
52
0.5
–90
–145
26Cl
ippe
d Si
ne1.
8, 2
.5, 3
, 3.3
VCSO
and
PSO
Part
Fam
ilyTy
peFo
otpr
int (
mm
)O
utpu
t Fre
quen
cy (M
Hz)
Tem
pera
ture
Ran
ge (o C
)Ji
tter 1
2k-2
0 M
Hz
fs–r
ms
Car
rier (
MH
z)O
utpu
t Log
ic
DO
C20
6559
Spac
e VC
SO16
x 1
630
0 to
150
0–4
0 to
+85
1000
Sine
DO
C20
6906
Spac
e VC
SO16
x 1
630
0 to
100
0–4
0 to
+85
0.5
1000
LVPE
CLVS
-501
Sing
le fre
quen
cy V
CSO
14 x
960
0 to
300
0–1
0 to
+85
1217
00Si
ne, B
alanc
ed o
r Diffe
rent
ial S
inew
ave,
LVP
ECL
VS-5
04Du
al fre
quen
cy V
CSO
14 x
960
0 to
300
0–1
0 to
+85
1219
80Si
ne, B
alanc
ed o
r Diffe
rent
ial S
inew
ave,
LVP
ECL
VS-5
07Si
ngle
frequ
ency
VCS
O14
x 9
3000
to 6
000
–40
to +
8510
5898
.24
Sine
, Bala
nced
or D
iffere
ntial
Sin
ewav
eVS
-702
Sing
le fre
quen
cy V
CSO
7 x
515
0 to
100
0–4
0 to
+85
100
622.
08LV
PECL
, LVD
SVS
-709
Dual
frequ
ency
VCS
O7
x 5
120
to 1
200
–40
to +
8512
069
8.81
LVPE
CL, L
VDS
VS-8
00Si
ngle
frequ
ency
VCS
O5
x 3.
280
0 to
320
0–4
0 to
+85
629
49.1
2Si
ne, B
alanc
ed o
r Diffe
rent
ial S
inew
ave
VCXO
Part
Fam
ilyTy
peFo
otpr
int (
mm
)O
utpu
t Fre
quen
cy
(MH
z)Te
mpe
ratu
re
Ran
ge (o C
)Pu
ll R
ange
(ppm
)Ph
ase
Noi
se
10 H
z dB
c/H
zPh
ase
Noi
se
100
kHz
dBc/
Hz
Car
rier (
MH
z)O
utpu
t Log
icSu
pply
Vo
ltage
(V)
VX-5
01Lo
w n
oise
VCX
O14
x 9
10 to
120
0–4
0 to
+85
65–7
6–1
6610
0CM
OS,
Sin
e, L
VPEC
L, L
VDS
3.3,
5
VX-7
06Lo
w n
oise
VCX
O7
x 5
40 to
300
–40
to +
8560
–72
–166
122.
88CM
OS,
LVP
ECL
3.3,
5
VX-8
05Lo
w n
oise
VCX
O5
x 3.
210
0 to
204
.8–4
0 to
+10
550
–68
–157
122.
88LV
PECL
3.3
VX-5
05M
il tem
p ra
nge
VCXO
14 x
920
to 8
00–5
5 to
+12
560
–76
–161
100
CMO
S, L
VPEC
L3.
3, 5
DO
C20
4898
Spac
e VC
XO25
x 2
5 10
0 to
700
–40
to +
8520
700
LVPE
CL3.
3
DO
C20
4899
Spac
e VC
XO25
x 2
5 80
to 2
00–4
0 to
+85
2020
0LV
DS3.
3
DO
C20
6218
Spac
e VC
XO14
x 9
1 to
100
–40
to +
8550
–85
–159
16CM
OS
3.3,
5
VV-8
00St
anda
rd V
CXO
5 x
3.2
1.54
4 to
77.
76–4
0 to
+85
150
–63
–157
61.4
4CM
OS
3.3,
5
VX-7
05St
anda
rd V
CXO
7 x
577
.76
to 1
70–4
0 to
+85
50–6
6–1
5112
2.88
CMO
S, L
VPEC
L3.
3
www.microchip.com42
XO
Part
Fam
ilyTy
peFo
otpr
int (
mm
)O
utpu
t Fre
quen
cy
(MH
z)Te
mpe
ratu
re
Stab
ility
(ppm
)Te
mpe
ratu
re R
ange
M
in (o C
)Ji
tter 1
2k-2
0 M
Hz
fs
–rm
sC
arrie
r (M
Hz)
Out
put L
ogic
Supp
ly V
olta
ge (V
)
DO
C20
3679
Spac
e XO
16 x
16
12 to
200
50–5
5 to
+12
50.
0920
0LV
DS3.
3D
OC
2038
10Sp
ace
XOm
ultip
le op
tions
, see
spe
cifica
tion
100
to 7
0050
–55
to +
125
0.3
700
LVPE
CL3.
3D
OC
2049
00Sp
ace
XOm
ultip
le op
tions
, see
spe
cifica
tion
12 to
160
50–5
5 to
+12
50.
1410
0CM
OS
2.5,
3.3
DO
C20
6379
Spac
e XO
, 300
k ra
d16
x 1
612
to 1
0050
–55
to +
125
0.08
100
CMO
S3.
3, 5
DO
C20
6903
Spac
e XO
, 300
kra
d16
x 1
612
to 2
0050
–55
to +
125
0.09
200
LVDS
3.3
M55
310/
28B
Mil t
emp
rang
e XO
14 x
91
to 8
550
–55
to +
125
TTL
3.3
M55
310/
30B
Mil t
emp
rang
e XO
14 x
90.
45 to
85
50–5
5 to
+12
5CM
OS
3.3
OS-
6833
8Sp
ace
XOm
ultip
le op
tions
, see
spe
cifica
tion
0.35
to 1
0050
–55
to +
125
0.16
40CM
OS,
TTL
3.3,
5PS
-702
High
freq
uenc
y SO
7 x
515
0 to
100
050
–40
to +
8510
062
2.08
LVPE
CL, L
VDS
3.3
PX-7
00Pr
ecisi
on X
O7
x 5
1 to
800
50–5
5 to
+12
550
010
0CM
OS,
TTL
, LVP
ECL,
LVD
S2.
5, 3
.3, 5
PX-7
06St
anda
rd X
O7
x 5
40 to
300
25–4
0 to
+85
4810
0CM
OS,
LVP
ECL
3.3,
5VC
-711
Low
jitte
r XO
7 x
510
to 1
7010
0–4
0 to
+10
510
015
6.25
LVPE
CL, L
VDS
2.5,
3.3
VC-8
01St
anda
rd X
O5
x 3.
20.
0327
7 to
125
50–5
5 to
+12
550
012
5CM
OS
1.8,
2.5
, 3.3
, 5VC
-806
Stan
dard
XO
5 x
3.2
25 to
250
25–4
0 to
+85
300
155.
52LV
PECL
, LVD
S2.
5, 3
.3VC
-820
Stan
dard
XO
3.2
x 2.
50.
625
to 1
3350
–55
to +
125
6112
5CM
OS
1.8,
2.5
, 3.3
VC-8
27Lo
w jit
ter X
O3.
2 x
2.5
20 to
170
100
–40
to +
105
130
156.
25LV
PECL
, LVD
S2.
5, 3
.3VC
-840
Stan
dard
XO
2.5
x 2
0.75
to 6
025
–40
to +
105
177
25CM
OS
1.8,
2.5
, 3.3
Low
-Pow
er O
scill
ator
s
Prod
uct
Out
put F
requ
ency
M
in. (
MH
z)O
utpu
t Fre
quen
cy
Max
(MH
z)O
utpu
t Log
icFr
eque
ncy
Stab
ility
(p
pm)
Tem
p. R
ange
(°
C)
Supp
ly V
olta
ge (V
)C
urre
nt (T
yp) (
mA)
Pe
riod
Jitte
r (p
s R
MS)
# O
utpu
tsD
imen
sion
sO
utpu
t Driv
e
Stre
ngth
(pf)
DSC
60X1
B0.
002
80LV
CMO
S±2
0, ±
25, ±
50– 4
0 to
+12
51.
71–3
.63
1.3
101
1.6
x 1.
2 m
m 4
-pin
2.
0 x
1.6
mm
4-p
in
2.5
x 2.
0 m
m 4
-pin
3.
2 x
2.5
mm
4-p
in*
5.0
x 3.
2 m
m 4
pin
* 7.
0 x
5.0
mm
4-p
in*
15D
SC60
X3B
0.00
280
LVCM
OS
±20,
±25
, ±51
– 40
to +
125
1.71
–3.6
31.
310
15
DSC
61X1
B0.
002
100
LVCM
OS
±20,
±25
, ±56
– 40
to +
125
1.71
–3.6
33.
07.
01
15
DSC
61X2
B0.
002
100
LVCM
OS
±20,
±25
, ±57
– 40
to +
125
1.71
–3.6
33.
07.
01
25
DSC
1001
117
0LV
CMO
S±1
0, ±
25, ±
50– 4
0 to
+10
51.
62–3
.63
5.0
6.0
12.
5 x
2.0
mm
4-p
in
3.2
x 2.
5 m
m 4
-pin
5.
0 x
3.2
mm
4-p
in
7.0
x 5.
0 m
m 4
-pin
15D
SC10
031
170
LVCM
OS
±10,
±25
, ±50
– 40
to +
105
1.62
–3.6
36.
05.
01
25
DSC
1004
117
0LV
CMO
S±1
0, ±
25, ±
50– 4
0 to
+10
51.
62–3
.63
7.0
5.0
140
Low
-Jitt
er O
scill
ator
s
Prod
uct
Out
put F
requ
ency
M
in. (
MH
z)O
utpu
t Fre
quen
cy
Max
(MH
z)O
utpu
t Log
icFr
eque
ncy
St
abili
ty (p
pm)
Tem
pera
ture
R
ange
(°C
)Su
pply
Vo
ltage
(V)
Cur
rent
(T
yp) (
mA)
Pe
riod
Jitte
r (p
s R
MS)
Phas
e N
oise
(ps
RM
S)
(12k
–20
MH
z)#
Out
puts
Dim
ensi
ons
Out
put D
rive
Stre
ngth
(pf)
MX5
710
860
LVCM
OS,
LVP
ECL,
LVD
S, H
CSL
±20,
±50
–40
to +
852.
375–
3.63
700.
161
7.0
x 5.
0 m
m 6
-pin
MX5
510
860
LVCM
OS,
LVP
ECL,
LVD
S, H
CSL
±20,
±50
–40
to +
852.
375–
3.63
700.
161
5.0
x 3.
2 m
m 6
-pin
DSC
11x1
2.3
170
LVCM
OS
±10,
±25
, ±50
–55
to +
125
2.25
–3.6
325
31.
70/0
.3 (2
00k–
20M
)1
2.5
x 2.
0 m
m 6
-pin
3.
2 x
2.5
mm
6-p
in
5.0
x 3.
2 m
m 6
-pin
7.
0 x
5.0
mm
6-p
in
15D
SC11
x22.
346
0LV
PECL
±10,
±25
, ±50
–40
to +
105
2.25
–3.6
351
2.5
1.70
/0.3
(200
k–20
M)
1D
SC11
x32.
346
0LV
DS±1
0, ±
25, ±
50–4
0 to
+10
52.
25–3
.63
292.
51.
70/0
.3 (2
00k–
20M
)1
DSC
11x4
2.3
460
HCSL
±10,
±25
, ±50
–40
to +
105
2.25
–3.6
330
2.5
1.70
/0.3
(200
k–20
M)
1D
SC12
x12.
517
0LV
CMO
S±2
0, ±
25, ±
55–4
0 to
+12
52.
25–3
.63
270.
651
15D
SC12
x22.
545
0LV
PECL
±20,
±25
, ±55
–40
to +
105
2.25
–3.6
350
0.65
1D
SC12
x32.
545
0LV
DS±2
0, ±
25, ±
55–4
0 to
+12
52.
25–3
.63
320.
651
DSC
12x4
2.5
450
HCSL
±20,
±25
, ±55
–40
to +
105
2.25
–3.6
340
0.65
1D
SC2x
102.
317
0LV
CMO
S±1
0, ±
25, ±
50–5
5 to
+12
52.
25–3
.63
253
1.70
/0.3
(200
k–20
M)
1
3.2
x 2.
5 m
m 1
4-pi
n
15D
SC2x
202.
346
0LV
PECL
±10,
±25
, ±50
–40
to +
105
2.25
–3.6
351
2.5
1.70
–0.3
(200
k–20
M)
1D
SC2x
302.
346
0LV
DS±1
0, ±
25, ±
50–4
0 to
+10
52.
25–3
.63
292.
51.
70/0
.3 (2
00k–
20M
)1
DSC
2x40
2.3
460
HCSL
±10,
±25
, ±50
–40
to +
105
2.25
–3.6
330
2.5
1.70
/0.3
(200
k–20
M)
1
Focus Product Selector Guide 43
Spre
ad S
pect
rum
Osc
illat
ors
Prod
uct
Out
put F
requ
ency
M
in. (
MH
z)O
utpu
t Fre
quen
cy
Max
(MH
z)O
utpu
t Log
icFr
eque
ncy
Stab
ility
(p
pm)
Tem
p. R
ange
(°C
)Su
pply
Vol
tage
(V)
Cur
rent
(Typ
) (m
A)
Perio
d Ji
tter
(ps
RM
S)#
Out
puts
Dim
ensi
ons
Out
put D
rive
Stre
ngth
(pf)
DSC
6x1B
110
0LV
CMO
S±2
0, ±
25, ±
50 –
40 to
+12
51.
71–3
.63
37
11.
6 x
1.2
mm
4-p
in
2.0
x 1.
6 m
m 4
-pin
2.
5 x
2.0
mm
4-p
in
3.2
x 2.
5 m
m 4
-pin
*
10
DSC
63x2
B1
100
LVCM
OS
±20,
±25
, ±53
–40
to +
125
1.71
–3.6
33
71
25
Auto
mot
ive
Osc
illat
ors
Prod
uct
Out
put F
requ
ency
M
in. (
MH
z)O
utpu
t Fre
quen
cy
Max
(MH
z)O
utpu
t Log
icFr
eque
ncy
St
abili
ty (p
pm)
Tem
pera
ture
R
ange
(°C
)Su
pply
Vo
ltage
(V)
Cur
rent
(T
yp) (
mA)
Pe
riod
Jitte
r (p
s R
MS)
Phas
e N
oise
(p
s R
MS)
# O
utpu
tsD
imen
sion
sO
utpu
t Driv
e St
reng
th (p
f)
DSA
60x1
0.00
280
LVCM
OS
±20,
±25
, ±50
–40
to +
125
1.71
–3.6
31.
310
11.
6 x
1.2
mm
4-p
in
2.0
x 1.
6 m
m 4
-pin
2.
5 x
2.0
mm
4-p
in
3.2
x 2.
5 m
m 4
-pin
* 5.
0 x
3.2
mm
4 p
in*
7.0
x 5.
0 m
m 4
-pin
*
10D
SA60
x30.
002
80LV
CMO
S±2
0, ±
25, ±
50–4
0 to
+12
51.
71–3
.63
1.3
101
5D
SA61
x10.
002
100
LVCM
OS
±20,
±25
, ±50
–40
to +
125
1.71
–3.6
33.
07.
01
10D
SA61
x20.
002
100
LVCM
OS
±20,
±25
, ±50
–40
to +
125
1.71
–3.6
33.
07.
01
25D
SA63
x11
100
LVCM
OS
±20,
±25
, ±50
–40
to +
125
1.71
–3.6
33
71
10D
SA63
x21
100
LVCM
OS
±20,
±25
, ±50
–40
to +
125
1.71
–3.6
33
71
25D
SA10
011
170
LVCM
OS
±20,
±25
, ±50
–40
to +
105
1.62
–3.6
35.
06.
01
2.5
x 2.
0 m
m 4
-pin
15
DSA
11x1
2.3
170
LVCM
OS
±20,
±25
, ±50
–55
to +
125
2.25
–3.6
325
31.
70/0
.3
(200
k–20
M)
12.
5 x
2.0
mm
6-p
in
3.2
x 2.
5 m
m 6
-pin
5.
0 x
3.2
mm
6-p
in15
DSA
2311
2.3
170
LVCM
OS
±25,
±50
–55
to +
125
2.25
–3.6
321
31.
70/0
.3
(200
k–20
M)
22.
5 x
2.0
mm
6-p
in15
DSA
557-
0310
010
0HC
SL±2
5, ±
50–4
0 to
+10
52.
25–3
.63
60PC
Ie G
en 1
/2/3
/42
3.2
x 2.
5 m
m 1
4-pi
n
Adva
nced
Jitt
er A
ttenu
ator
s (O
TN)
Part
DPL
Ls
or P
aths
DPL
L BW
(Hz)
Inpu
tsD
iff. O
utpu
tsC
MO
S O
utpu
tsLo
w-J
itter
AP
LLs
GP
Clo
ck G
enTy
p. J
itter
(p
sRM
S)In
put F
requ
ency
Out
put F
requ
ency
NV
Mem
ory
Hos
t Bus
2K/8
K
Alig
n1
Hz
Alig
nN
CO
(p
pb)
Pack
age
ZL30
152
114
–896
2 D/
SE4
21
00.
71
kHz
to 7
50 M
Hz1
kHz
to 7
50 M
HzO
TPSP
I/I²C
64-p
in L
BGA
ZL30
155
214
–896
4 D/
SE8
42
00.
71
kHz
to 7
50 M
Hz1
kHz
to 7
50 M
HzO
TPSP
I/I²C
100-
pin
LBG
AZL
3015
72
14–8
964
D/SE
8–12
4–12
11
0.7
1 kH
z to
750
MHz
1 kH
z to
750
MHz
OTP
SPI/I
²C10
0-pi
n LB
GA
ZL30
160
414
–896
4 D/
SE8
4–12
22
0.7
1 kH
z to
750
MHz
1 kH
z to
750
MHz
OTP
SPI/I
²C10
0-pi
n LB
GA
ZL30
165
45–
806
8 D/
SE8
84
00.
651
kHz
to 7
50 M
Hz1
Hz to
750
MHz
OTP
SPI/I
²C0.
001
144-
pin
LBG
AZL
3016
63
5–89
69
D/SE
+ 2
SE
88
40
0.65
1 kH
z to
750
MHz
1 Hz
to 7
50 M
HzO
TPSP
I/I²C
ü0.
001
145-
pin
LBG
AZL
3016
72
5–89
69
D/SE
+ 2
SE
88
40
0.65
1 kH
z to
750
MHz
1 Hz
to 7
50 M
HzO
TPSP
I/I²C
ü0.
001
146-
pin
LBG
AZL
3016
84
5–89
68D
/SE
88
40
0.65
1 kH
z to
750
MHz
1 Hz
to 7
50 M
HzO
TPSP
I/I²C
0.00
114
7-pi
n LB
GA
ZL30
169
114
–500
2 D/
SE +
2 S
E3
61
00.
251
kHz
to 1
250
MHz
1 Hz
to 1
035
MHz
Int E
ESP
I/I²C
ü0.
0132
-pin
QFN
ZL30
182
25–
500
4 D/
SE +
2 S
E6
122
00.
251
kHz
to 1
250
MHz
1 Hz
to 1
035
MHz
Int E
ESP
I/I²C
ü0.
0164
-pin
LG
AZL
3017
43
14–4
705
D/10
SE
614
31
0.18
1 kH
z to
900
MHz
1 Hz
to 9
00 M
HzIn
t EE
SPI/I
²Cü
ü10
0-pi
n AQ
FN
IEEE
158
8 Ti
min
g So
lutio
ns
Part
No.
DPL
LsBW
(Hz)
Inpu
tsIn
put F
requ
ency
Embe
dded
PPS
&
EPP2
SD
iff. O
utpu
tsC
MO
S O
utpu
tsO
utpu
t Fre
quen
cyLo
w-J
itter
APL
LsG
P C
lock
Gen
Jitte
r (ps
RM
S)Pk
g si
ze (m
m)
ZL30
361
1 NC
O0.
1 to
896
111
Hz to
750
MHz
66
1 Hz
to 7
50 M
Hz3
00.
6714
4-pi
n LB
GA
ZL30
362
4 NC
O0.
1 to
896
111
Hz to
750
MHz
88
1 Hz
to 7
50 M
Hz4
00.
6714
4-pi
n LB
GA
ZL30
363
2 NC
O0.
1 to
896
111
Hz to
750
MHz
88
1 Hz
to 7
50 M
Hz4
00.
6714
4-pi
n LB
GA
ZL30
364
3 NC
O0.
1 to
896
111
Hz to
750
MHz
88
1 Hz
to 7
50 M
Hz4
00.
6714
4-pi
n LB
GA
ZL30
365
4 or
(4 N
CO)
5 to
890
8 D/
SE1
Hz to
750
MHz
88
81
Hz to
750
MHz
40
0.67
144-
pin
LBG
AZL
3036
72
or (2
NCO
)5
to 8
909
D/SE
+2 S
E1
Hz to
750
MHz
66
61
Hz to
750
MHz
30
0.67
144-
pin
LBG
AZL
3072
11
NCO
0.1
to 1
02
D/SE
+ 1
SE
8 kH
z to
125
0 M
Hz3
6<1
Hz
to 1
035
MHz
10
0.26
64-p
in L
GA
ZL30
722
1 NC
O0.
1 to
500
2 D/
SE +
1 S
E8
kHz
to 1
250
MHz
36
<1 H
z to
103
5 M
Hz1
00.
2632
-pin
QFN
ZL30
723
2 NC
O0.
1 to
500
4 D/
SE +
1 S
E8
kHz
to 1
250
MHz
612
<1 H
z to
103
5 M
Hz2
00.
2664
-pin
LG
AZL
3070
11
or (1
NCO
)0.
1m to
470
5 D/
10 S
E0.
5 Hz
to 9
00 M
Hzü
614
0.5
Hz to
900
MHz
2 or
31
0.19
100-
pin
AQFN
www.microchip.com44
IEEE
158
8 Ti
min
g So
lutio
ns
Part
No.
DPL
LsBW
(Hz)
Inpu
tsIn
put F
requ
ency
Embe
dded
PPS
&
EPP2
SD
iff. O
utpu
tsC
MO
S O
utpu
tsO
utpu
t Fre
quen
cyLo
w-J
itter
APL
LsG
P C
lock
Gen
Jitte
r (ps
RM
S)Pk
g si
ze (m
m)
ZL30
702
2 or
(2 N
CO)
0.1m
to 4
705
D/10
SE
0.5
Hz to
900
MHz
ü6
140.
5 Hz
to 9
00 M
Hz2
or 3
10.
1910
0-pi
n AQ
FNZL
3070
33
or (3
NCO
)0.
1m to
470
5 D/
10 S
E0.
5 Hz
to 9
00 M
Hzü
614
0.5
Hz to
900
MHz
2 or
31
0.19
100-
pin
AQFN
ZL30
704
4 or
(4 N
CO)
0.1m
to 4
705
D/10
SE
0.5
Hz to
900
MHz
ü6
140.
5 Hz
to 9
00 M
Hz2
or 3
10.
1910
0-pi
n AQ
FNZL
3077
11
or (1
NCO
)0.
1m to
470
10 D
/10
SE0.
5 Hz
to 9
00 M
Hzü
816
+ 2
0.5
Hz to
104
5 M
Hz2
10.
1980
-lead
LG
AZL
3077
22
or (2
NCO
)0.
1m to
470
10 D
/10
SE0.
5 Hz
to 9
00 M
Hzü
816
+ 2
0.5
Hz to
104
5 M
Hz2
10.
1980
-lead
LG
AZL
3077
33
or (3
NCO
)0.
1m to
470
10 D
/10
SE0.
5 Hz
to 9
00 M
Hzü
816
+ 2
0.5
Hz to
104
5 M
Hz2
10.
1980
-lead
LG
A
Gen
eral
-Pur
pose
Jitt
er A
ttenu
ator
s
Prod
uct
Inde
pend
ent
Out
put F
req.
Fa
mili
esIn
puts
Diff
Inpu
t Fr
eq. R
ange
Low
-Jitt
er
APLL
sTy
pica
l Jitt
er
fs R
MS
DPL
L Fe
atur
es: R
ef.
Switc
hing
/ Hol
dove
r/
DPL
L Ba
ndw
idth
NC
O
Mod
eN
CO
pp
bD
iff O
utpu
tsC
MO
S O
utpu
tsO
utpu
t Fre
q.
Ran
geN
V M
emor
yH
ost B
usSu
pply
Vo
ltage
Pack
age
ZL30
159
11
XTAL
, 1 D
1 Hz
to 7
50 M
1<1
000
02
1 Hz
–177
.5 M
SPI/I
²C3.
3 +
1.8
64-p
in L
BGA
ZL30
252
11
XTAL
/SE,
3
D/SE
1 kH
z to
1250
M1
1601
Glitc
hles
s/Di
gita
l Hol
d/
14 H
z–50
0 Hz
ü0.
010–
30–
6<1
Hz–
1035
M2
Ext E
E3SP
I/I²C
3.3
+ 1.
832
-pin
QFN
ZL30
253
11
XTAL
/SE,
3
D/SE
1 kH
z to
1250
M1
1601
Glitc
hles
s/Di
gita
l Hol
d/
14 H
z–50
0 Hz
ü0.
010–
30–
6<1
Hz–
1035
M2
Int E
E3SP
I/I²C
3.3
+ 1.
832
-pin
QFN
ZL30
254
11
XTAL
, 2 S
E1
<1 p
sG
litchl
ess/
Digi
tal H
old/
25
Hz
20
125
MHz
or
156.
25 M
HzNo
ne3.
3 +
1.8
32-p
in Q
FN
ZL30
255
22
XTAL
/SE,
6
D/SE
1 kH
z to
1250
M2
1601
Glitc
hles
s/Di
gita
l Hol
d/
14 H
z–50
0 Hz
ü0.
010–
60–
12<1
Hz–
1035
M2
Int E
E3SP
I/I²C
3.3
+ 1.
832
-pin
QFN
ZL30
256
35
D/10
SE
1 kH
z to
1045
M3
190
Glitc
hles
s/Di
gita
l Hol
d
14 H
z–47
0 Hz
ü~0
.000
0035
0–8
0–16
+2
1 Hz
–104
5 M
Int E
E4SP
I/I²C
3.3
+ 1.
880
-lead
LG
A
Sync
hron
ous
Ethe
rnet
(Syn
cE) S
ilico
n Ti
min
g So
lutio
ns
Part
DPL
LsBW
(Hz)
Inpu
tsIn
put F
requ
ency
Embe
dded
PPS
&
EPP2
SD
iff. O
utpu
tsC
MO
S O
utpu
tsO
utpu
t Fre
quen
cyLo
w-J
itter
APL
LsG
P C
lock
Gen
Jitte
r (ps
RM
S)Pa
ckag
e si
ze
(mm
)
ZL30
161
1 or
(1 N
CO)
0.1m
–1k
111
Hz–7
50 M
Hz6
61
Hz–7
50 M
Hz3
00.
6714
4-pi
n LB
GA
ZL30
162
4 or
(4 N
CO)
0.1m
–1k
111
Hz–7
50 M
Hz8
81
Hz–7
50 M
Hz4
00.
6714
4-pi
n LB
GA
ZL30
163
2 or
(2 N
CO)
0.1m
–1k
111
Hz–7
50 M
Hz8
81
Hz–7
50 M
Hz4
00.
6714
4-pi
n LB
GA
ZL30
164
3 or
(3 N
CO)
0.1m
–1k
111
Hz–7
50 M
Hz8
81
Hz–7
50 M
Hz4
00.
6714
4-pi
n LB
GA
ZL30
621
1 or
(1 N
CO)
0.1m
–10
2 D/
SE +
1 S
E8
kHz–
1250
MHz
36
<1 H
z–10
35 M
Hz1
00.
2664
-pin
LG
AZL
3062
21
or (1
NCO
)0.
1m–5
002
D/SE
+ 1
SE
8 kH
z–12
50 M
Hz3
6<1
Hz–
1035
MHz
10
0.26
32-p
in Q
FNZL
3062
32
or (2
NCO
)0.
1m–5
004
D/SE
+ 1
SE
8 kH
z–12
50 M
Hz6
12<1
Hz–
1035
MHz
20
0.26
64-p
in L
GA
ZL30
601
1 or
(1 N
CO)
0.1m
–470
5 D/
10 S
E0.
5 Hz
–900
MHz
ü6
140.
5 Hz
–900
MHz
2 or
31
0.19
100-
pin
AQFN
ZL30
602
2 or
(2 N
CO)
0.1m
–470
5 D/
10 S
E0.
5 Hz
–900
MHz
ü6
140.
5 Hz
–900
MHz
2 or
31
0.19
100-
pin
AQFN
ZL30
603
3 or
(3 N
CO)
0.1m
–470
5 D/
10 S
E0.
5 Hz
–900
MHz
ü6
140.
5 Hz
–900
MHz
2 or
31
0.19
100-
pin
AQFN
ZL30
604
4 or
(4 N
CO)
0.1m
–470
5 D/
10 S
E0.
5 Hz
–900
MHz
ü6
140.
5 Hz
–900
MHz
2 or
31
0.19
100-
pin
AQFN
ZL30
671
1 or
(1 N
CO)
0.1m
-470
10 D
/10
SE0.
5 Hz
-900
MHz
ü8
16 +
20.
5 Hz
-104
5 M
Hz2
10.
1980
-lead
LG
AZL
3067
22
or (2
NCO
)0.
1m-4
7010
D/1
0 SE
0.5
Hz-9
00 M
Hzü
816
+ 2
0.5
Hz-1
045
MHz
21
0.19
80-le
ad L
GA
ZL30
673
3 or
(3 N
CO)
0.1m
-470
10 D
/10
SE0.
5 Hz
-900
MHz
ü8
16 +
20.
5 Hz
-104
5 M
Hz2
10.
1980
-lead
LG
AZL
3015
11
1–50
02
D/SE
+ 1
SE
1 kH
z–65
0 M
Hz0–
30–
6<1
Hz–
650
MHz
10
0.26
32-p
in Q
FNZL
3061
11
or (1
NCO
)14
–470
5 D/
10 S
E0.
5 Hz
–900
MHz
ü6
140.
5 Hz
–900
MHz
2 or
31
0.19
100-
pin
AQFN
ZL30
612
2 or
(2 N
CO)
14–4
705
D/10
SE
0.5
Hz–9
00 M
Hzü
614
0.5
Hz–9
00 M
Hz2
or 3
10.
1910
0-pi
n AQ
FNZL
3061
44
or (4
NCO
)14
–470
5 D/
10 S
E0.
5 Hz
–900
MHz
ü6
140.
5 Hz
–900
MHz
2 or
31
0.19
100-
pin
AQFN
ZL30
681
1 or
(1 N
CO)
14-4
7010
D/1
0 SE
0.5
Hz–9
00 M
Hzü
816
+ 2
0.5
Hz–1
045
MHz
21
0.19
80-le
ad L
GA
ZL30
682
2 or
(2 N
CO)
14-4
7010
D/1
0 SE
0.5
Hz–9
00 M
Hzü
816
+ 2
0.5
Hz–1
045
MHz
21
0.19
80-le
ad L
GA
ZL30
683
3 or
(3 N
CO)
14-4
7010
D/1
0 SE
0.5
Hz–9
00 M
Hzü
816
+ 2
0.5
Hz–1
045
MHz
21
0.19
80-le
ad L
GA
Focus Product Selector Guide 45
Prog
ram
mab
le O
scill
ator
s
Prod
uct
Out
put F
requ
ency
M
in. (
MH
z)O
utpu
t Fre
quen
cy
Max
(MH
z)O
utpu
t Log
icFr
eque
ncy
St
abili
ty (p
pm)
Tem
pera
ture
R
ange
(°C
)Su
pply
Vo
ltage
(V)
Cur
rent
(T
yp) (
mA)
Pe
riod
Jitte
r (p
s R
MS)
Phas
e N
oise
(p
s R
MS)
(1
2k–2
0 M
Hz)
# O
utpu
tsD
imen
sion
sO
utpu
t Driv
e St
reng
th (p
f)
DSC
8001
117
0LV
CMO
S±1
0, ±
25, ±
50–4
0 to
+10
51.
62–3
.63
5.0
6.0
12.
5 x
2.0
mm
4-p
in
3.2
x 2.
5 m
m 4
-pin
5.
0 x
3.2
mm
4-p
in
7.0
x 5.
0 m
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SC80
031
170
LVCM
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, ±50
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to +
105
1.62
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01
25
DSC
8004
117
0LV
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0, ±
25, ±
50–4
0 to
+10
51.
62–3
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7.0
5.0
140
DSC
81x1
2.3
170
LVCM
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±10,
±25
, ±50
–40
to +
105
2.25
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325
31.
70/0
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00k–
20M
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x 2.
0 m
m 6
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2 x
2.5
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2 m
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-pin
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0 x
5.0
mm
6-p
in
15D
SC81
x22.
346
0LV
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±10,
±25
, ±50
–40
to +
105
2.25
–3.6
351
2.5
1.70
/0.3
(200
k–20
M)
1D
SC81
x32.
346
0LV
DS±1
0, ±
25, ±
50–4
0 to
+10
52.
25–3
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292.
51.
70/0
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00k–
20M
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DSC
81x4
2.3
460
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±10,
±25
, ±50
–40
to +
105
2.25
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330
2.5
1.70
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555
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Max
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Mon
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Supp
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52
100
0.5
215
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5 to
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52.
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18
240
MIC
1557
52
100
0.5
215
00.
5–5
5 to
+12
52.
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18
255
Hig
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TCXO
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Out
put F
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MH
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Tem
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Dim
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MXT
5710
860
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0 to
+85
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5–3.
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0.5
17.
0 x
5.0
mm
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Mul
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Out
put F
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Out
put L
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Freq
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Supp
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MX8
510
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LVPE
CL, L
VDS,
HCS
L, L
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±25,
±50
–40
to +
852.
375–
3.63
0.2
55.
0 x
7.0
mm
38-
pin
DSC
2311
2.3
170
LVCM
OS
±25,
±50
–55
to +
125
2.25
–3.6
31.
70/0
.3 (2
00k–
20M
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2.5
x 2.
0 m
m 6
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DSC
20xx
2.3
460
LVCM
OS,
LVP
ECL,
LVD
S, H
CSL
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±50
–40
to +
105
2.25
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31.
70/0
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00k–
20M
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3.2
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5 m
m 1
4-pi
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346
0LV
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S, L
VPEC
L, L
VDS,
HCS
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5, ±
50–4
0 to
+10
52.
25–3
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1.70
/0.3
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k–20
M)
23.
2 x
2.5
mm
14-
pin
DSC
22xx
2.3
460
LVCM
OS,
LVP
ECL,
LVD
S, H
CSL
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±50
–40
to +
105
2.25
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31.
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00k–
20M
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3.2
x 2.
5 m
m 1
4-pi
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0-xx
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346
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L, L
VDS,
HCS
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50–4
0 to
+10
52.
25–3
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1.70
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(200
k–20
M)
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0 x
3.2
mm
20-
pin
DSC
612
0.00
210
0LV
CMO
S±2
0, ±
25, ±
50–4
0 to
+12
51.
71–3
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21.
6 x
1.2
mm
6-p
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2.0
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6 m
m 6
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2.0
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6-p
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SC61
30.
002
100
LVCM
OS
±20,
±25
, ±50
–40
to +
125
1.71
–3.6
33
DSC
557-
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010
0HC
SL/L
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±50
–40
to +
105
2.25
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5 m
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100
100
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50–4
0 to
+10
52.
25–3
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Gen
1/2
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35.
0 x
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mm
20-
pin
DSC
557-
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010
0HC
SL/L
VDS
±25,
±50
–40
to +
105
2.25
–3.6
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www.microchip.com46
Clo
ck G
ener
ator
s
Prod
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Cat
egor
yPh
ase
Jitte
r (ps
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2 KH
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20
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MH
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Stab
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DSC
2030
Low
Pow
er C
lock
Gen
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ors
1.70
/0.3
(2
00k–
20M
)30
Inte
grat
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EMS
1LV
DS
2.3
460
2.25
–3.6
3–4
0 to
+10
514
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QFN
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2 x
2.5
mm
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, ±50
PL61
1s–0
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w P
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Clo
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Crys
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LVCM
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120
01.
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3–4
5 to
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2210
Low
Pow
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lock
Gen
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1.70
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00k–
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317
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105
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m ±
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SM80
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Clo
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2
25 M
Hz C
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CL, L
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to +
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4
PL90
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Cond
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1.25
200
2.5~
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85
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2010
Low
Pow
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lock
Gen
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1.70
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(2
00k–
20M
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Inte
grat
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EMS
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317
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to +
105
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m
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612
Low
Pow
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lock
Gen
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140
Inte
grat
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EMS
2LV
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002
100
1.71
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3–4
0 to
+12
51.
6 x
1.2
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0 x
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5 x
2.0
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, ±5
0
DSC
613
Low
Pow
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lock
Gen
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14
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tegr
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MEM
S3
LVCM
OS
0.00
210
0 1
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3.63
–40
to +
125
1.6
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m,
2.0
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m,
2.5
x 2.
0 m
m
±20
, ±25
, ±5
0
PL60
2032
Low
–Jitt
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lock
Gen
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ors
225
25 M
Hz C
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al2
HCS
L10
010
0 2
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3.63
–40
to +
85 1
6 pi
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6020
41 L
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Clo
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25 M
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3.63
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85 2
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6070
41 L
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78
25 M
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85 2
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6020
81 L
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2210
25 M
Hz C
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3.63
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85 4
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6070
81 L
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78
25 M
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0 2
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2–21
Low
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lock
Gen
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225
25 M
Hz C
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557–
04 L
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Clo
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Gen
1/2/
3/4
30 In
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MEM
S3
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3.63
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105
20–
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3.2
mm
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DSC
557–
05 L
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3.63
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105
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557–
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Clo
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S2
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010
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3.63
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105
14–
pin
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mm
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pm
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557–
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Clo
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tegr
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3.63
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105
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3.2
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557–
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3.63
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105
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557–
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Clo
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Gen
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3/4
30 In
tegr
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MEM
S2
HCS
L/LV
DS/L
VCM
OS
100
100
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5–3.
63–4
0 to
+10
5 1
4–pi
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m ±
25, ±
50
PL60
2033
Low
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lock
Gen
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ors
225
25M
Hz C
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LVC
MO
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512
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lock
Gen
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225
25M
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512
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lock
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30
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Ref
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LVC
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6.25
125
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PL61
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8 L
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85 D
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9 L
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Clo
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s
70 R
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2 L
VCM
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5 1
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5 to
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85 D
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SM80
3020
Low
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lock
Gen
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0.18
12 P
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200
156
.25
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5 to
+85
DSC
2311
Low
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lock
Gen
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1.7
0/0.
3 (2
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Inte
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200
170
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63–5
5 to
+12
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DSC
2011
Low
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lock
Gen
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1.7
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3 (2
00k–
20M
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50
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2311
Low
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lock
Gen
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ors
3
2
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MO
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317
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200
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100
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1 C
MO
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200
2.5
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–45
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85 S
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8L
Focus Product Selector Guide 47
Clo
ck G
ener
ator
s
Prod
uct
Cat
egor
yPh
ase
Jitte
r (ps
) (T
yp, 1
2 KH
z to
20
MH
z)
Perio
d Ji
tter
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(pea
k to
pe
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Inpu
tsN
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Hz)
Out
put
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MH
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613–
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Ref
eren
ce3
LVC
MO
S1
200
2.5
–3.3
–45
to +
85 D
FN–6
L, S
OT–
6L
PL61
3–01
Low
Pow
er C
lock
Gen
erat
ors
30
0 C
ryst
al or
Ref
eren
ce8
LVC
MO
S1
200
1.8
–3.3
–45
to +
85 Q
FN–1
6L,
TSSO
P–16
L
PL61
1–31
Low
Pow
er C
lock
Gen
erat
ors
2.5
40 C
ryst
al or
Ref
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ce3
PEC
L, L
VDS,
HCS
L, C
MO
S5
200
2.5
–3.3
–45
to +
85 S
OP–
8L
PL60
2031
Non
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25 2
5MHz
Cry
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2 L
VCM
OS/
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2525
2.5
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85 1
6-pi
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FN 3
× 3
PL
602–
27 N
one
225
25M
Hz C
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LVC
MO
S/HC
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025
0 2
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5 to
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2082
Non
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2210
25M
Hz C
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HCS
L25
250
2.5
~3.3
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85
PL
6070
82No
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8 H
CSL
2525
0 2
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5 to
+85
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C
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CM
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1736
2.5
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to +
85Di
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6L,
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0.1
C
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CM
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14
2.5
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85 D
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OT–
6L,
SOP–
8L
PL61
1–30
Low
-Pow
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lock
Gen
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ors
2.5
40 C
ryst
al or
Ref
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ce3
PEC
L, L
VDS,
HCS
L, C
MO
S5
400
2.5
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–45
to +
85 D
FN–6
L, S
OT–
6L
DSC
2040
Low
-Pow
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lock
Gen
erat
ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
1 H
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2.3
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2.2
5–3.
63–4
0 to
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5 1
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FN,
3.2
× 2.
5 m
m ±
25, ±
50
DSC
2044
Low
–Jitt
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lock
Gen
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ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
2 H
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2.3
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2.2
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63–4
0 to
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5 1
4–pi
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FN,
3.2
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5 m
m ±
25, ±
50
DSC
2041
Low
–Jitt
er C
lock
Gen
erat
ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
2 H
CSL,
LVC
MO
S2.
346
0 2
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3.63
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to +
105
14–
pin
QFN
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2 ×
2.5
mm
±25
, ±50
DSC
2042
Low
–Jitt
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lock
Gen
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ors
1.7
0/0.
3 (2
00k–
20M
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Inte
grat
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EMS
2 H
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2.3
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2.2
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0 to
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5 1
4–pi
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FN,
3.2
× 2.
5 m
m ±
25, ±
50
DSC
2211
Low
–Jitt
er C
lock
Gen
erat
ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
2 L
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2.3
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2.2
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63–5
5 to
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5 1
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3.2
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5 m
m ±
25, ±
50
DSC
400
Low
–Jitt
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lock
Gen
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ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
4 L
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0 to
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5 5
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3.2
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20
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50
ppm
DSC
2033
Low
–Jitt
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lock
Gen
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ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
2 L
VDS
2.3
460
2.2
5–3.
63–4
0 to
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5 1
4–pi
n Q
FN,
3.2
× 2.
5 m
m ±
25, ±
50
DSC
2233
Low
–Jitt
er C
lock
Gen
erat
ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
2 L
VDS
2.3
460
2.2
5–3.
63–4
0 to
+10
5 1
4–pi
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FN,
3.2
× 2.
5 m
m ±
25, ±
50
DSC
2031
Low
–Jitt
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lock
Gen
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ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
2 L
VDS,
LVC
MO
S2.
346
0 2
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3.63
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to +
105
14–
pin
QFN
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2 ×
2.5m
m ±
25, ±
50
DSC
2022
Low
–Jitt
er C
lock
Gen
erat
ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
2 L
VPEC
L2.
346
0 2
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3.63
–40
to +
105
14–
pin
QFN
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2 ×
2.5
mm
±25
, ±50
DSC
2222
Low
–Jitt
er C
lock
Gen
erat
ors
1.7
0/0.
3 (2
00k–
20M
)30
Inte
grat
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EMS
2 L
VPEC
L2.
346
0 2
.25–
3.63
–40
to +
105
14–
pin
QFN
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2 ×
2.5
mm
±25
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SM80
3 L
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Clo
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s0.
185
Cry
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12 C
MO
S, P
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S, H
CSL
1285
0
SM
813
Low
–Jitt
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lock
Gen
erat
ors
0.11
55
Cry
stal
or R
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ence
12 P
ECL,
LVD
S, H
CSL,
CM
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1285
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48-
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pin
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3025
0 L
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Clo
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ator
s0.
161
XTAL
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3 D
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035
3.3+
1.8
–40
to +
8532
-pin
QFN
ZL30
251
Low
–Jitt
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lock
Gen
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ors
0.16
1 XT
AL/S
E, 3
D/S
E3D
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1.03
53.
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0 to
+85
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FNZL
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4 L
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Clo
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ator
s0.
162
XTAL
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6 D
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6D/1
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CML,
CM
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1.03
53.
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8–4
0 to
+85
64-p
in L
GA
ZL30
245
Low
–Jitt
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lock
Gen
erat
ors
0.16
2 XT
AL/S
E, 6
D/S
E6D
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ECM
L, C
MO
S<1
Hz1.
035
3.3+
1.8
–40
to +
8564
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LG
A
ZL30
260
Low
–Jitt
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lock
Gen
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ors
0.18
1 XT
AL/S
E, 3
D/S
E6D
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ELV
DS, L
VPEC
L, H
CSL,
CM
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HST
L<1
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035
2.5
V on
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8 V
+ 2.
5 V,
1.
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+ 3.
3 V
–40
to +
8556
-pin
QFN
ZL30
261
Low
–Jitt
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lock
Gen
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ors
0.18
1 XT
AL/S
E, 3
D/S
E6D
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ELV
DS, L
VPEC
L, H
CSL,
CM
OS,
HST
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035
2.5
V on
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8 V
+ 2.
5 V,
1.
8 V
+ 3.
3 V
–40
to +
8556
-pin
QFN
ZL30
262
Low
–Jitt
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lock
Gen
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ors
0.18
1 XT
AL/S
E, 3
D/S
E10
D/20
SELV
DS, L
VPEC
L, H
CSL,
CM
OS,
HST
L<1
Hz1.
035
2.5
V on
ly, 3
.3 V
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8 V
+ 2.
5 V,
1.
8 V
+ 3.
3 V
–40
to +
8556
-pin
QFN
ZL30
263
Low
–Jitt
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lock
Gen
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ors
0.18
1 XT
AL/S
E, 3
D/S
E10
D/20
SELV
DS, L
VPEC
L, H
CSL,
CM
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HST
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035
2.5
V on
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1.
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3 V
–40
to +
8556
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QFN
ZL30
264
Low
–Jitt
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lock
Gen
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ors
0.18
1 XT
AL/S
E, 3
D/S
E6D
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ELV
DS, L
VPEC
L, H
CSL,
CM
OS,
HST
L<1
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035
2.5
V on
ly, 3
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8 V
+ 2.
5 V,
1.
8 V
+ 3.
3 V
–40
to +
8556
-pin
QFN
ZL30
265
Low
–Jitt
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lock
Gen
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ors
0.18
1 XT
AL/S
E, 3
D/S
E6D
/12S
ELV
DS, L
VPEC
L, H
CSL,
CM
OS,
HST
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035
2.5
V on
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5 V,
1.
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3 V
–40
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8556
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QFN
ZL30
266
Low
–Jitt
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lock
Gen
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ors
0.18
1 XT
AL/S
E, 3
D/S
E10
D/20
SELV
DS, L
VPEC
L, H
CSL,
CM
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HST
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035
2.5
V on
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8 V
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5 V,
1.
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3 V
–40
to +
8556
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QFN
ZL30
267
Low
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lock
Gen
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ors
0.18
1 XT
AL/S
E, 3
D/S
E10
D/20
SELV
DS, L
VPEC
L, H
CSL,
CM
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HST
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035
2.5
V on
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5 V,
1.
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3 V
–40
to +
8556
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QFN
ZL30
281
PCIe
Clo
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ator
s0.
161
XTAL
3D/6
SECM
L, C
MO
S25
M, 1
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N/A
3.3+
1.8
–40
to +
8532
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Clo
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Prod
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LVDS
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PEC
L, L
VDS,
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850
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Clo
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6 C
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tegr
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48-p
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FN
Hig
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Com
mun
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Lim
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Am
plifi
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Prod
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Prod
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Dat
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Cap
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Sup
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Pack
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SY84
113B
UFi
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Post
Am
plifie
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25 G
bps
2.5
PECL
CML
LOS
(TTL
)16
-pin
VQ
FNSY
8805
3CL
Lim
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Ampl
ifiers
- Bu
rst M
ode
and
Lim
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Ampl
ifiers
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ntin
uous
Mod
e12
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bps
3.3
CML/
PECL
CML
SD/L
OS
(TTL
)16
-pin
VQ
FNSY
8806
3CL
Lim
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Ampl
ifiers
- Bu
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ode
and
Lim
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Ampl
ifiers
- Co
ntin
uous
Mod
e12
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bps
3.3
CML/
PECL
CML
SD/L
OS
(TTL
)16
-pin
VQ
FNSY
8807
3LLi
mitin
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plifie
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Cont
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12.5
Gbp
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3CM
L/PE
CLCM
LSD
/LO
S (T
TL)
16-p
in V
QFN
SY88
083L
Lim
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Ampl
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- Co
ntin
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Mod
e12
.5 G
bps
3.3
CML/
PECL
CML
SD/L
OS
(TTL
)16
-pin
VQ
FNSY
8814
7DL
Lim
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Ampl
ifiers
- Co
ntin
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Mod
e1.
25 G
bps
3.3
PECL
PECL
LOS
(TTL
)10
-pin
MSO
PSY
8814
9CL
Lim
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Ampl
ifiers
- Co
ntin
uous
Mod
e1.
25 G
bps
3.3
PECL
PECL
LOS
(TTL
)10
-pin
MSO
PSY
8814
9HAL
Lim
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Ampl
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1.25
Gbp
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3CM
L/PE
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S (T
TL)
16-p
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QFN
SY88
149N
DL
Lim
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1.25
Gbp
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S (T
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Plea
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all fo
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info
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SY88
303B
LLi
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plifie
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Cont
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3.2
Gbp
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3PE
CLCM
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S (T
TL)
10-p
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SOP,
16-
pin
VQFN
SY88
343B
LLi
mitin
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plifie
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Cont
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ode
3.2
Gbp
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3PE
CLCM
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S (T
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10-p
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SOP,
16-
pin
VQFN
SY88
349N
DL
Lim
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Ampl
ifiers
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2.5
Gbp
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3CM
L/PE
CLPE
CLSD
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S (T
TL)
Plea
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all fo
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info
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SY88
353B
LLi
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plifie
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Cont
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3.2
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3PE
CL w
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16-p
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QFN
SY88
403B
LLi
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Cont
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4.25
Gbp
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CLCM
LLO
S (T
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10-p
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SOP,
16-
pin
VQFN
SY88
773V
Lim
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Ampl
ifiers
- Co
ntin
uous
Mod
e3.
2 G
bps
3.3,
5.0
PECL
CML
LOS
(TTL
)16
-pin
VQ
FNSY
8880
3VLi
mitin
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plifie
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Cont
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0.16
Gbp
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3, 5
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S (T
TL)
10-p
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SOP
SY88
813V
Lim
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Ampl
ifiers
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ntin
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Mod
e0.
16 G
bps
3.3,
5.0
PECL
PECL
SD (P
ECL)
10-p
in M
SOP
SY88
843V
Lim
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Ampl
ifiers
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ntin
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Mod
e3.
2 G
bps
3.3,
5.0
PECL
CML
SD (T
TL)
Plea
se c
all fo
r pac
kage
info
rmat
ion
SY88
893V
Fibe
r Opt
ic Po
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mpl
ifiers
0.15
5 G
bps
PECL
PECL
SD (T
TL)
10-p
in M
SOP
SY88
903A
LLi
mitin
g Am
plifie
rs -
Cont
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ode
1.25
Gbp
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CLPE
CLLO
S (T
TL)
10-p
in M
SOP
SY88
903V
Lim
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Ampl
ifiers
- Co
ntin
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Mod
e1.
25 G
bps
3.3,
5.0
PECL
PECL
LOS
(TTL
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-pin
MSO
PSY
8892
3AV
Fibe
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3, 5
PECL
PECL
LOS
(TTL
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-pin
MSO
PSY
8893
3AL
Lim
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Ampl
ifiers
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ntin
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Mod
e1.
25 G
bps
3.3
PECL
PECL
SD (T
TL)
10-p
in M
SOP
SY84
403B
LLi
mitin
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plifie
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Cont
inuo
us M
ode
4.25
Gbp
s3.
3PE
CL w
ith In
tern
al 50
O to
Vre
fCM
LLO
S (T
TL)
Plea
se c
all fo
r pac
kage
info
rmat
ion
Focus Product Selector Guide 49
Hig
h-Sp
eed
Com
mun
icat
ion:
Las
er D
iode
Driv
ers
Prod
uct
Prod
uct T
ype
Dat
a R
ate
Cap
abili
tyPo
wer
Sup
ply
(V)
Dat
a In
put T
ype
Mod
ulat
ion
Cur
rent
Bias
Cur
rent
Pack
ages
SY84
782U
DFB/
FP L
aser
Driv
ers
1.25
Gbp
s2.
5CM
L90
16-p
in V
QFN
SY88
022A
LDF
B/FP
Las
er D
river
s11
.3 G
bps
3.3
6080
Plea
se c
all fo
r pac
kage
info
rmat
ion
SY88
024L
VCSE
L Dr
ivers
11.3
Gbp
s3.
320
20Pl
ease
call
for p
acka
ge in
form
atio
nSY
8842
2LDF
B/FP
Las
er D
river
s4.
25 G
bps
3.3
9016
-pin
VQ
FNSY
8882
2VDF
B/FP
Las
er D
river
s0.
155
Gbp
s3.
3, 5
.010
-pin
MSO
PSY
8892
2VDF
B/FP
Las
er D
river
s2.
5 G
bps
3.3,
5.0
2510
-pin
MSO
PSY
8893
2LDF
B/FP
Las
er D
river
s4.
25 G
bps
3.3
CML
6016
-pin
VQ
FNSY
8898
2LDF
B/FP
Las
er D
river
s2.
7 G
bps
3.3
9016
-pin
VQ
FNSY
8899
2LVC
SEL
Drive
rs4.
25 G
bps
3.3
2516
-pin
VQ
FN
Hig
h-Sp
eed
Com
mun
icat
ion:
Las
er D
iode
Driv
ers
Prod
uct
Prod
uct T
ype
Dat
a R
ate
Cap
abili
tyPo
wer
Sup
ply
(V)
LA D
ata
Inpu
t Typ
eLA
Dat
a O
utpu
t Typ
eLD
D D
ata
Inpu
t Typ
eLD
D M
odul
atio
n C
urre
nt (m
A)LD
D B
ias
Cur
rent
(mA)
Pack
ages
SY88
432L
Tran
sceiv
ers
4.25
Gbp
s3.
3CM
LCM
LCM
L60
24-p
in V
QFN
Hig
h-Sp
eed
Com
mun
icat
ion:
Fib
er O
ptic
Mod
ule
Con
trol
lers
Prod
uct
Prod
uct T
ype
Pow
er S
uppl
y (V
)Se
rial I
nter
face
Pack
ages
MIC
3001
GM
LFO
M C
ontro
llers
3.3
I² C S
MBu
s Co
mpl
iant
Plea
se c
all fo
r pac
kage
info
rmat
ion
MIC
3003
GFL
FOM
Con
trolle
rs3.
3I² C
SM
Bus
Com
plian
tPl
ease
call
for p
acka
ge in
form
atio
nM
IC30
03G
ML
FOM
Con
trolle
rs3.
3I² C
SM
Bus
Com
plian
tPl
ease
call
for p
acka
ge in
form
atio
n
Hig
h-Sp
eed
Com
mun
icat
ion:
Clo
ck a
nd D
ata
Rec
over
y
Prod
uct
Prod
uct T
ype
Dat
a R
ate
Cap
abili
tyPo
wer
Sup
ply
(V)
Dat
a In
put T
ype
Dat
a O
utpu
t Typ
ePa
ckag
es
SY69
753A
LCl
ock
and
Data
Rec
over
y12
5–15
5 M
bps
3.3
PECL
32/T
QFP
SY87
700A
LCl
ock
and
Data
Rec
over
y32
–208
Mbp
s3.
3PE
CLPl
ease
call
for p
acka
ge in
form
atio
nSY
8770
1AL
Cloc
k an
d Da
ta R
ecov
ery
28–1
300
Mbp
s3.
3PE
CLPl
ease
call
for p
acka
ge in
form
atio
n
Mem
ory
Prod
ucts
: Ser
ial F
lash
Prod
uct
Bus
Den
sity
Org
aniz
atio
nM
ax. C
lock
Fr
eque
ncy
Ope
ratin
g Vo
ltage
Tem
pera
ture
R
ange
E/W
End
uran
ce
(Typ
ical
)D
ata
Ret
entio
n (M
inim
um)
Writ
e Sp
eed
(Typ
ical
)M
ax. S
tand
by
Cur
rent
(@ 8
5˚C
)H
ard
Pin
Prot
ect
Softw
are
Prot
ect
Prot
ecte
d Ar
ray
Size
Pack
ages
SST2
5VF5
12A
× 1
512
Kb×
833
MHz
2.7–
3.6V
−40°
C to
+85
°C10
0k10
0 Ye
ars
14 µ
s (B
yte
Prog
ram
)8
µAY
YVa
rious
8L-S
OIC
, 8C-
WSO
N
SST2
5VF0
10A
× 1
1 M
b×
833
MHz
2.7–
3.6V
−40°
C to
+85
°C10
0k10
0 Ye
ars
14 µ
s (B
yte
Prog
ram
)8
µAY
YVa
rious
8L-S
OIC
, 8C-
WSO
N
SST2
5VF0
20B
× 1
2 M
b×
880
MHz
2.7–
3.6V
−40°
C to
+85
°C10
0k10
0 Ye
ars
7 µs
(Wor
d Pr
ogra
m)
5 µA
YY
Vario
us8L
-SO
IC, 8
C-W
SON
SST2
5WF0
20A
× 1
2 M
b×
840
MHz
1.65
–1.9
5V−4
0°C
to +
85°C
100k
20 Y
ears
3 m
s (P
age
Prog
ram
)10
µA
YY
Vario
us8L
-SO
IC, 8
C-W
SON,
8C-
USO
N,
9B-W
LCSP
SST2
6VF0
20A
× 1,
x 2
, x
42
Mbi
t×
810
4 M
Hz2.
3V–3
.6V
−40°
C to
+12
5°C
100k
100
Year
s1
ms
(Pag
e Pr
ogra
m)
30 µ
AY
YVa
rious
8L-S
OIC
, 8C-
WDF
N
SST2
5PF0
40C
× 1,
x 2
4 M
bit
× 8
40 M
Hz2.
3−3.
6V−4
0°C
to +
125°
C10
0k20
Yea
rs4
ms
(Pag
e Pr
ogra
m)
50 µ
AY
YVa
rious
8L-S
OIC
, 8C-
WSO
N, 8
C-US
ON
SST2
5VF0
40B
× 1
4 M
b×
840
MHz
2.7–
3.6V
−40°
C to
+85
°C10
0k10
0 Ye
ars
7 µs
(Wor
d Pr
ogra
m)
5 µA
YY
Vario
us8L
-SO
IC, 8
C-W
SON
SST2
6WF0
40B/
BA×
1, x
2,
x 4
4 M
b×
810
4 M
Hz1.
65–1
.95V
−40°
C to
+85
°C10
0k10
0 Ye
ars
1 m
s (P
age
Prog
ram
)40
µA
YY
Vario
us8L
-SO
IC, 8
C-W
SON,
8C-
USO
N,
8B-W
LCSP
SST2
5WF0
40B
× 1,
x 2
4 M
b×
840
MHz
1.65
–1.9
5V−4
0°C
to +
125°
C10
0k20
Yea
rs0.
8 m
s (P
age
Prog
ram
)50
µA
YY
Vario
us8L
-SO
IC, 8
C- U
DFN,
8C-
USO
N,
9B-W
LCSP
SST2
6VF0
40A
× 1,
x 2
, x
44
Mbi
t×
810
4 M
Hz2.
3−3.
6V−4
0°C
to +
125°
C10
0k10
0 Ye
ars
1 m
s (P
age
Prog
ram
)30
µA
YY
Vario
us8L
-SO
IC, 8
C-W
DFN
SST2
5VF0
80B
× 1
8 M
b×
840
MHz
2.7–
3.6V
−40°
C to
+85
°C10
0k10
0 Ye
ars
7 µs
(Wor
d Pr
ogra
m)
5 µA
YY
Vario
us8L
-SO
IC, 8
C-W
SON,
8B-
XFBG
A
www.microchip.com50
Mem
ory
Prod
ucts
: Ser
ial F
lash
Prod
uct
Bus
Den
sity
Org
aniz
atio
nM
ax. C
lock
Fr
eque
ncy
Ope
ratin
g Vo
ltage
Tem
pera
ture
R
ange
E/W
End
uran
ce
(Typ
ical
)D
ata
Ret
entio
n (M
inim
um)
Writ
e Sp
eed
(Typ
ical
)M
ax. S
tand
by
Cur
rent
(@ 8
5˚C
)H
ard
Pin
Prot
ect
Softw
are
Prot
ect
Prot
ecte
d Ar
ray
Size
Pack
ages
SST2
5WF0
80B
× 1,
x 2
8 M
b×
840
MHz
1.65
–1.9
5V−4
0°C
to +
125°
C10
0k20
Yea
rs0.
8 m
s (P
age
Prog
ram
)50
µA
YY
Vario
us8L
-SO
IC, 8
C- U
DFN,
8C-
USO
N,
9B-W
LCSP
SST2
6VF0
80A
× 1,
x 2
, x
48
Mb
× 8
104
MHz
2.3–
3.6V
−40°
C to
+12
5°C
100k
100
Year
s1
ms
(Pag
e Pr
ogra
m)
30 µ
AY
YVa
rious
8L-S
OIC
, 8C-
WDF
N
SST2
6WF0
80B/
BA×
1, x
2,
x 4
8 M
b×
810
4 M
Hz1.
65–1
.95V
−40°
C to
+85
°C10
0k10
0 Ye
ars
1 m
s (P
age
Prog
ram
)40
µA
YY
Vario
us8L
-SO
IC, 8
C-W
SON,
8C-
USO
N,
8B-W
LCSP
SST2
6WF0
16B/
BA×
1, x
2,
x 4
16 M
b×
810
4 M
Hz1.
65–1
.95V
−40°
C to
+85
°C10
0k10
0 Ye
ars
1 m
s (P
age
Prog
ram
)40
µA
YY
Vario
us8L
-SO
IC, 8
C-W
SON,
8B-
WLC
SP
SST2
6VF0
16B
× 1,
x 2
, x
416
Mb
× 8
104
MHz
2.3–
3.6V
−40°
C to
+12
5°C
100k
100
Year
s1
ms
(Pag
e Pr
ogra
m)
45 µ
AY
YVa
rious
8L-S
OIC
, 8L-
SOIJ
, 8C-
WSO
N
SST2
6VF0
32B/
BA×
1, x
2,
x 4
32 M
b×
810
4 M
Hz2.
3–3.
6V−4
0°C
to +
125°
C10
0k10
0 Ye
ars
1 m
s (P
age
Prog
ram
)45
µA
YY
Vario
us8L
-SO
IJ, 8
C-W
SON,
24B
-TBG
A
SST2
6VF0
64B/
BA×
1, x
2,
x 4
64 M
b×
810
4 M
Hz2.
3–3.
6V−4
0°C
to +
105°
C10
0k10
0 Ye
ars
1 m
s (P
age
Prog
ram
)45
µA
YY
Vario
us8L
-SO
IJ, 1
6L-S
OIC
, 8C-
WSO
N,
8C-T
DFN-
S, 2
4B-T
BGA
SST2
6WF0
64C
× 1,
x 2
, x
464
Mb
× 8
104
MHz
1.65
–1.9
5V−4
0°C
to +
85°C
100k
100
year
s1.
5 m
s (P
age
Prog
ram
)40
µA
YY
Vario
us8L
-SO
IJ, 1
6L-S
OIC
, 8C-
WSO
N,
24B-
TBG
A
Mem
ory
Prod
ucts
: Par
alle
l Fla
sh
Prod
uct
Den
sity
Bus
Org
aniz
atio
nAc
cess
Ti
me
(ns)
Ope
ratin
g Vo
ltage
Tem
pera
ture
R
ange
(°C
)
E/W
En
dura
nce
(Min
imum
)
Dat
a R
eten
tion
(Min
imum
)W
rite
Spee
d (T
ypic
al)
Typ.
St
andb
y C
urre
nt
Har
d Pi
n Pr
otec
tSo
ftwar
e Pr
otec
t
Prot
ecte
d Ar
ray
Size
(K
B)Sp
ecia
l/ U
niqu
e Fe
atur
esPa
ckag
es
SST3
9SF0
10A
1 M
b×
8×
870
4.5–
5.5V
–40
to +
8510
0K10
0 Ye
ars
14 µ
s (B
yte
Prog
ram
)30
µA
––
N/A
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; Sm
all e
rase
sec
tor
32L-
PLCC
, 32L
-PDI
P,
32L-
TSO
P
SST3
9LF0
101
Mb
× 8
× 8
553.
0–3.
6V0
to 7
010
0K10
0 Ye
ars
14 µ
s (B
yte
Prog
ram
)1
µA–
–N/
AFa
st re
ad, p
rogr
am a
nd e
rase
; Low
pow
er;
Small
era
se s
ecto
r48
B-TF
BGA,
32L
-TSO
P,
32L-
PLCC
SST3
9VF0
101
Mb
× 8
× 8
702.
7–3.
6V–4
0 to
+85
100K
100
Year
s14
µs
(Byt
e Pr
ogra
m)
1 µA
––
N/A
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; Sm
all e
rase
sec
tor
48B-
TFBG
A, 3
2L-T
SOP,
32
L-PL
CC
SST3
9SF0
20A
2 M
b×
8×
855
, 70
4.5–
5.5V
–40
to +
8510
0K10
0 Ye
ars
14 µ
s (B
yte
Prog
ram
)30
µA
––
N/A
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; Sm
all e
rase
sec
tor
32L-
PLCC
, 32L
-PDI
P,
32L-
TSO
P
SST3
9VF0
202
Mb
× 8
× 8
702.
7–3.
6V–4
0 to
+85
100K
100
Year
s14
µs
(Byt
e Pr
ogra
m)
1 µA
––
N/A
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; Sm
all e
rase
sec
tor
48B-
TFBG
A, 3
2L-T
SOP,
32
L-PL
CC
SST3
9SF0
404
Mb
× 8
× 8
704.
5–5.
5V–4
0 to
+85
100K
100
Year
s14
µs
(Byt
e Pr
ogra
m)
30 µ
A–
–N/
AFa
st re
ad, p
rogr
am a
nd e
rase
; Low
pow
er;
Small
era
se s
ecto
r32
L-PL
CC, 3
2L-P
DIP,
32
L-TS
OP
SST3
9WF4
00B
4 M
b×
16×
1670
1.65
– 1.
95V
–40
to +
8510
0K10
0 Ye
ars
28 µ
s (W
ord
Prog
ram
)40
µA
––
N/A
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; Sm
all e
rase
sec
tor
48B-
TFBG
A,
48B-
WFB
GA,
48
B-XF
BGA
SST3
9VF4
0xC
4 M
b×
16×
1670
2.7–
3.6V
–40
to +
8510
0K10
0 Ye
ars
7 µs
(Wor
d Pr
ogra
m)
3 µA
Y–
8Fa
st re
ad, p
rogr
am a
nd e
rase
; Low
pow
er;
Small
era
se s
ecto
r; In
dust
ry-s
tand
ard
com
man
d se
t and
boo
t blo
ck s
truct
ure
48B-
TFBG
A, 4
8L-T
SOP,
48
B-W
FBG
A
SST3
9WF8
00B
8 M
b×
16×
1670
1.65
– 1.
95V
–40
to +
8510
0K10
0 Ye
ars
28 µ
s (W
ord
Prog
ram
)40
µA
––
N/A
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; Sm
all e
rase
sec
tor
48B-
TFBG
A,
48B-
WFB
GA,
48
B-XF
BGA
SST3
9LF8
0xC
8 M
b×
16×
1655
3.0–
3.6V
0 to
70
100K
100
Year
s7
µs (W
ord
Prog
ram
)3
µAY
–N/
AFa
st re
ad, p
rogr
am a
nd e
rase
; Low
pow
er;
Small
era
se s
ecto
r; In
dust
ry-s
tand
ard
com
man
d se
t and
boo
t blo
ck s
truct
ure
48B-
TFBG
A, 4
8L-T
SOP,
48
B-W
FBG
A
SST3
9VF8
0xC
8 M
b×
16×
1670
2.7–
3.6V
–40
to +
8510
0K10
0 Ye
ars
7 µs
(Wor
d Pr
ogra
m)
3 µA
Y–
N/A
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; Sm
all e
rase
sec
tor;
Indu
stry
-sta
ndar
d co
mm
and
set a
nd b
oot b
lock
stru
ctur
e
48B-
TFBG
A, 4
8L-T
SOP,
48
B-W
FBG
A
SST3
9WF1
60x
16 M
b×
16×
1670
1.65
–1.9
5V–4
0 to
+85
100K
100
Year
s28
µs
(Wor
d Pr
ogra
m)
40 µ
AY
–64
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; Sm
all e
rase
sec
tor
48B-
TFBG
A, 4
8B-W
FBG
A,
48B-
XFBG
A
SST3
9VF1
60xC
16 M
b×
16×
1670
2.7–
3.6V
–40
to +
8510
0K10
0 Ye
ars
7 µs
(Wor
d Pr
ogra
m)
3 µA
Y–
8Fa
st re
ad, p
rogr
am a
nd e
rase
; Low
pow
er;
Small
era
se s
ecto
r; In
dust
ry-s
tand
ard
com
man
d se
t and
boo
t blo
ck s
truct
ure
48B-
TFBG
A, 4
8L-T
SOP,
48
B-W
FBG
A
Focus Product Selector Guide 51
Mem
ory
Prod
ucts
: Par
alle
l Fla
sh
Prod
uct
Den
sity
Bus
Org
aniz
atio
nAc
cess
Ti
me
(ns)
Ope
ratin
g Vo
ltage
Tem
pera
ture
R
ange
(°C
)
E/W
En
dura
nce
(Min
imum
)
Dat
a R
eten
tion
(Min
imum
)W
rite
Spee
d (T
ypic
al)
Typ.
St
andb
y C
urre
nt
Har
d Pi
n Pr
otec
tSo
ftwar
e Pr
otec
t
Prot
ecte
d Ar
ray
Size
(K
B)Sp
ecia
l/ U
niqu
e Fe
atur
esPa
ckag
es
SST3
9VF3
20xC
32 M
b×
16×
1670
2.7–
3.6V
–40
to +
8510
0K10
0 Ye
ars
7 µs
(Wor
d Pr
ogra
m)
4 µA
Y–
8Fa
st re
ad, p
rogr
am a
nd e
rase
; Low
pow
er;
Small
era
se s
ecto
r; In
dust
ry-s
tand
ard
com
man
d se
t and
boo
t blo
ck s
truct
ure
48B-
TFBG
A, 4
8L-T
SOP
SST3
8VF6
40xB
64 M
b×
16×
1670
2.7–
3.6V
–40
to +
8510
0K10
0 Ye
ars
7 µs
/1.7
5 µs
(W
rite
Buffe
r Pr
ogra
m)
3 µA
YY
32, 8
Fast
read
, pro
gram
and
era
se; L
ow p
ower
; In
dust
ry-s
tand
ard
com
man
d se
t and
boo
t bl
ock
stru
ctur
e, S
ecur
ity fe
atur
es48
B-TF
BGA,
48L
-TSO
P
Mem
ory
Prod
ucts
: Ser
ial E
EPR
OM
Bus
Product
Density
Organization
Max. Clock Frequency
Operating Voltage (V)
Temperature Range
E/W Endurance (Minimum)
Data Retention (Minimum)
Factory Programmed Serial Number
Max. Standby Current (@ 85°C)
Hard Pin Protect
Software Protect
Protected Array Size
Special/Unique Features
Packages
Single Wire
AT21
CS0
11
Kb×
812
5 kb
ps1.
7–3.
6−4
0°C
to
+85°
C1M
100
Year
sY
2.5
uA–
YW
, ¾,
½, ¼
Two
pins
onl
y: S
I/O a
nd G
ND. 2
56-b
it se
curit
y re
gist
er w
ith 6
4-bi
t ser
ial
num
ber
SOIC
(SS)
, SO
T-23
(ST)
, UDF
N (M
A), W
LCSP
(U
), XS
FN (M
S)
AT21
CS1
11
Kb×
812
5 kb
ps2.
7 to
4.5
−40°
C to
+8
5°C
1M10
0 Ye
ars
Y2.
5 uA
–Y
W, ¾
, ½
, ¼Tw
o pi
ns o
nly:
SI/O
and
GND
. 256
-bit
secu
rity
regi
ster
with
64-
bit s
erial
nu
mbe
rSO
IC (S
S), S
OT-
23 (S
T), U
DFN
(MA)
, WLC
SP
(U),
XSFN
(MS)
I²C
24xx
0012
8 b
× 8
400
kHz
1.7–
5.5
−40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µA–
––
No a
ddre
ss p
ins
- sin
gle
slave
add
ress
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, DFN
(MNY
), 5-
SOT-
23 (O
T)
24xx
01/0
1H1
Kbx
81
MHz
1.7-
5.5
-40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µAY
-W
, ½No
add
ress
pin
s - s
ingl
e sla
ve a
ddre
ssPD
IP (P
),SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
C), T
DFN
(MNY
), UD
FN (M
UY),
5-SO
T-23
(OT)
, SC7
0 (LT
)
AT24
C01
C1
Kbx
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N6
μAY
–W
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eigh
t dev
ices
to s
hare
a c
omm
on 2
-wire
bus
PDIP
(P),
SOIC
(SS)
, SO
T-23
(ST)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
)
24xx
014/
014H
1 Kb
x 8
400
KHz
1.7-
5.5
-40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µAY
-W
, ½Th
ree
addr
ess
pins
; pag
e siz
e =
16 B
ytes
PDIP
(P),S
OIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
DFN
(MC)
, TDF
N (M
NY),
5-SO
T-23
(OT)
AT24
CS0
11
Kbx
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
Y6
μAY
–W
Uniq
ue 1
28-b
it se
rial n
umbe
r sep
arat
e fro
m th
e m
ain m
emor
y ar
ray
SOIC
(SS)
, TSO
T (S
T), T
SSO
P (X
), UD
FN (M
A)
AT24
CSW
011
Kbx
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
Y0.
8 uA
–Y
W, ¾
, ½
, ¼
Softw
are
Slav
e Ad
dres
s, 2
56-b
it se
curit
y re
gist
er s
epar
ate
from
the
main
ar
ray
(128
-bit
regi
ster
fact
ory-
prog
ram
med
, 128
-bit
user
pro
gram
mab
le an
d pe
rman
ently
lock
able)
, writ
e pr
otec
t can
also
be
perm
anen
tly lo
cked
WLC
SP (U
)
24xx
02E4
8/ E
64/
UID
2 Kb
× 8
400
kHz
1.7–
5.5
1.5–
3.6
−40°
C to
+1
25°C
1M20
0 Ye
ars
Y1
µAY
–W
, ½Th
ree
addr
ess
pins
- ca
scad
e up
to e
ight
dev
ices
to s
hare
a c
omm
on 2
-wire
bu
s, u
niqu
e EU
I-48/
EUI-6
4 M
AC a
ddre
ss a
nd u
niqu
e ID
opt
ions
ava
ilabl
ePD
IP (P
), SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY),
5-SO
T-23
(OT)
, SC7
0 (LT
)
24xx
02/0
2H2
Kbx
81
MHz
1.7-
5.5
-40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µAY
-W
, ½No
add
ress
pin
s - s
ingl
e sla
ve a
ddre
ssPD
IP (P
),SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
C), T
DFN
(MNY
), UD
FN (M
UY),
5-SO
T-23
(OT)
, SC7
0 (LT
)
24xx
024/
25/2
4H2
Kbx
840
0 KH
z1.
7-5.
5-4
0°C
to
+125
°C1M
200
Year
sN
1 µA
Y -
W, ½
Thre
e ad
dres
s pi
ns; p
age
size
= 16
Byt
esPD
IP (P
),SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY),
5-SO
T-23
(OT)
, SC7
0 (LT
)
AT24
C02
C2
Kbx
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N6
μAY
–W
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eigh
t dev
ices
to s
hare
a c
omm
on 2
-wire
bus
PDIP
(P),
SOIC
(SS)
, SO
T-23
(ST)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
)
AT24
CS0
22
Kbx
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
Y6
μAY
–W
Uniq
ue 1
28-b
it se
rial n
umbe
r sep
arat
e fro
m th
e m
ain m
emor
y ar
ray
SOIC
(SS)
, TSO
T (S
T), T
SSO
P (X
), UD
FN (M
A)
AT24
CSW
022
Kbx
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
Y0.
8 uA
–Y
W, ¾
, ½
, ¼
Softw
are
Slav
e Ad
dres
s, 2
56-b
it se
curit
y re
gist
er s
epar
ate
from
the
main
ar
ray
(128
-bit
regi
ster
fact
ory-
prog
ram
med
, 128
-bit
user
pro
gram
mab
le an
d pe
rman
ently
lock
able)
, writ
e pr
otec
t can
also
be
perm
anen
tly lo
cked
WLC
SP (U
)
AT24
HC
02C
2 Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
6 μA
Y–
½Th
ree
addr
ess
pins
- ca
scad
e up
to e
ight
dev
ices
to s
hare
a c
omm
on 2
-wire
bu
s, h
alf a
rray
writ
e pr
otec
tPD
IP (P
), SO
IC (S
S), T
SSO
P (X
)
AT24
MAC
402/
602
2 Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+85°
C1M
100
Year
sY
6 μA
YY
W, ½
Uniq
ue IE
EE -p
rovid
ed 4
8/64
-bit
pre-
prog
ram
med
MAC
/EUI
add
ress
, uni
que
read
-onl
y 12
8-bi
t ser
ial n
umbe
rSO
IC (S
S), T
SOT
(ST)
, TSS
OP
(X),
UDFN
(MA)
www.microchip.com52
Mem
ory
Prod
ucts
: Ser
ial E
EPR
OM
Bus
Product
Density
Organization
Max. Clock Frequency
Operating Voltage (V)
Temperature Range
E/W Endurance (Minimum)
Data Retention (Minimum)
Factory Programmed Serial Number
Max. Standby Current (@ 85°C)
Hard Pin Protect
Software Protect
Protected Array Size
Special/Unique Features
Packages
I²C
24xx
04/0
4H4
Kbx
81
MHz
1.7-
5.5
-40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µAY
-W
, ½No
add
ress
pin
s - s
ingl
e sla
ve a
ddre
ssPD
IP (P
),SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
C), T
DFN
(MNY
), UD
FN (M
UY),
5-SO
T-23
(OT)
, CS1
6K (C
SP)
24xx
044
4 Kb
x 8
1 M
Hz1.
7-5.
5-4
0°C
to
+125
°C1M
200
Year
sN
1 µA
Y -
WTh
ree
addr
ess
pins
; pag
e siz
e =
16 B
ytes
PDIP
(P),S
OIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
UDFN
(MUY
)
AT24
C04
C4
Kbx
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N6
μAY
–W
Two
addr
ess
pins
- ca
scad
e up
to fo
ur d
evice
s to
sha
re a
com
mon
2-w
ire b
us.
PDIP
(P),
SOIC
(SS)
, SO
T-23
(ST)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
)
AT24
CS0
44
Kbx
81
MHz
1.7–
5.5
−40°
C to
+8
5°C
1M10
0 Ye
ars
Y6
μAY
–W
Uniq
ue 1
28-b
it se
rial n
umbe
r sep
arat
e fro
m th
e m
ain m
emor
y ar
ray
SOIC
(SS)
, TSO
T (S
T), T
SSO
P (X
), UD
FN (M
A)
AT24
CSW
044
Kbx
81
MHz
1.7–
5.5
−40°
C to
+8
5°C
1M10
0 Ye
ars
Y0.
8 μA
–Y
W, ¾
, ½
, ¼
Softw
are
Slav
e Ad
dres
s, 2
56-b
it se
curit
y re
gist
er s
epar
ate
from
the
main
ar
ray
(128
-bit
regi
ster
fact
ory-
prog
ram
med
, 128
-bit
user
pro
gram
mab
le an
d pe
rman
ently
lock
able)
, writ
e pr
otec
t can
also
be
perm
anen
tly lo
cked
WLC
SP (U
)
AT24
HC
04B
4 Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
0.8
μAY
–½
Two
addr
ess
pins
- ca
scad
e up
to fo
ur d
evice
s to
sha
re a
com
mon
2-w
ire b
us,
half
arra
y w
rite
prot
ect
PDIP
(PU)
, SO
IC (S
), TS
SOP
(T)
24xx
08/0
8H8
Kbx
81
MHz
1.7-
5.5
-40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µAY
-W
, 1/2
No a
ddre
ss p
ins
- sin
gle
slave
add
ress
; pag
e siz
e =
16 B
ytes
PDIP
(P),S
OIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
DFN
(MC)
, TDF
N (M
NY),
UDFN
(MUY
), 5-
SOT-
23 (O
T), C
S16K
(CSP
)
AT24
C08
C8
Kbx
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N6
μAY
–W
One
add
ress
pin
- ca
scad
e up
to tw
o de
vices
to s
hare
a c
omm
on 2
-wire
bus
PDIP
(P),
SOIC
(SS)
, SO
T-23
(ST)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
)
AT24
CS0
88
Kbx
81
MHz
1.7–
5.5
−40°
C to
+8
5°C
1M10
0 Ye
ars
Y6
μAY
–W
Uniq
ue 1
28-b
it se
rial n
umbe
r sep
arat
e fro
m th
e m
ain m
emor
y ar
ray
SOIC
(SS)
, TSO
T (S
T), T
SSO
P (X
), UD
FN (M
A)
AT24
CSW
088
Kbx
81
MHz
1.7–
5.5
−40°
C to
+8
5°C
1M10
0 Ye
ars
Y0.
8 μA
–Y
W, ¾
, ½
, ¼
Softw
are
Slav
e Ad
dres
s, 2
56-b
it se
curit
y re
gist
er s
epar
ate
from
the
main
ar
ray
(128
-bit
regi
ster
fact
ory-
prog
ram
med
, 128
-bit
user
pro
gram
mab
le an
d pe
rman
ently
lock
able)
, writ
e pr
otec
t can
also
be
perm
anen
tly lo
cked
WLC
SP (U
)
24xx
1616
Kb
× 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
200
Year
sN
1 µA
Y–
W, ½
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eig
ht d
evice
s to
sha
re a
co
mm
on 2
-wire
bus
, 16
byte
pag
e w
rite
buffe
r
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
DFN
(MC)
, DFN
(MNY
), 5-
SOT-
23 (O
T), W
LCSP
(C
S), U
DFN
(MUY
)
AT24
C16
C16
Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+85°
C1M
100
Year
sN
6.0
μAY
–W
No a
ddre
ss p
ins
- sin
gle
slave
add
ress
PDIP
(P),
SOIC
(SS)
, SO
T-23
(ST)
, TSS
OP
(X),
UDFN
(MA)
, VFB
GA
(C),
XDFN
(ME)
AT24
CS1
616
Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sY
6 μA
Y–
WNo
add
ress
pin
s - s
ingl
e sla
ve a
ddre
ssSO
IC (S
S), T
SOT
(ST)
, TSS
OP
(X),
UDFN
(MA)
24xx
32A
32
Kb×
840
0 kH
z1.
7–5.
5−4
0°C
to
+125
°C1M
200
Year
sN
1 µA
Y–
W, ¼
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eig
ht d
evice
s to
sha
re a
co
mm
on 2
-wire
bus
, 32
byte
pag
e w
rite
buffe
rPD
IP (P
), SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY),
5-SO
T-23
(OT)
, WLC
SP (C
S)
AT24
C32
D32
Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
0.8
uAY
–W
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eig
ht d
evice
s to
sha
re a
co
mm
on 2
-wire
bus
, 32
byte
pag
e w
rite
buffe
rSO
IC (S
S), S
OT-
23 (S
T), T
SSO
P (X
), UD
FN
(MA)
, UDF
N (M
AP),
VFBG
A (C
), XD
FN (M
E)
AT24
CS3
232
Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+85°
C1M
100
Year
sY
6 μA
Y–
WUn
ique
128
-bit
seria
l num
ber s
epar
ate
from
the
main
mem
ory
arra
ySO
IC (S
S), T
SOT
(ST)
, TSS
OP
(X),
UDFN
(MA)
24xx
6464
Kb
× 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
, 10
M20
0 Ye
ars
N1
µAY
–W
, ¼Th
ree
addr
ess
pins
- ca
scad
e up
to e
ight
dev
ices
to s
hare
a
com
mon
2-w
ire b
us, 3
2 by
te p
age
writ
e bu
ffer
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
DFN
(MNY
), 5-
SOT-
23 (O
T), W
LCSP
(CS)
24xx
6564
Kb
× 8
1 M
Hz1.
8-6
−40°
C to
+1
25°C
1M,
10M
200
Year
sN
1 µA
–Y
up to
15
4 KB
bl
ks
Thre
e ad
dres
s pi
ns, s
oftw
are
WP,
hig
h en
dura
nce
bloc
k, p
age
size
up to
64
Byte
sPD
IP (P
), SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY),
5-SO
T-23
(OT)
, WLC
SP (C
S)
AT24
C64
D64
Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
6 μA
Y–
WTh
ree
addr
ess
pins
, sof
twar
e W
P, h
igh
endu
ranc
e bl
ock,
pag
e siz
e up
to 6
4 By
tes
SOIC
(SS)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
), W
LCSP
(U),
XDFN
(ME)
AT24
CS6
464
Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sY
6 μA
Y–
WUn
ique
128
-bit
seria
l num
ber s
epar
ate
from
the
main
mem
ory
arra
ySO
IC (S
S), T
SSO
P (X
), UD
FN (M
A)
24xx
128
128
Kb×
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µAY
–W
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eig
ht d
evice
s to
sha
re a
com
mon
2-w
ire
bus
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
DFN
(MNY
), W
LCSP
(CS)
AT24
C12
8C12
8 Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
6 μA
Y–
WTh
ree
addr
ess
pins
- ca
scad
e up
to e
ight d
evice
s to
sha
re a
com
mon
2-w
ire b
usSO
IC (S
S), T
SSO
P (X
), UD
FN (M
A), U
DFN
(MAP
), VF
BGA
(C),
WLC
SP (U
), XD
FN (M
E)
24xx
256
256
Kb×
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µAY
–W
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eigh
t dev
ices
to s
hare
a c
omm
on 2
-wire
bus
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, SO
IJ (S
M),
MSO
P (M
S), D
FN (M
F), W
LCSP
(CS)
, TDF
N (M
NY)
24xx
256U
ID25
6 Kb
× 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
200
Year
sY
1 µA
Y–
WTh
ree
addr
ess
pins
- ca
scad
e up
to e
ight
dev
ices
to s
hare
a c
omm
on 2
-wire
bu
s, E
UI-4
8, E
UI-6
4 an
d un
ique
ID o
ptio
ns a
vaila
ble
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, SO
IJ (S
M),
MSO
P (M
S), D
FN (M
F), W
LCSP
(CS)
, TDF
N (M
NY)
Focus Product Selector Guide 53
Mem
ory
Prod
ucts
: Ser
ial E
EPR
OM
Bus
Product
Density
Organization
Max. Clock Frequency
Operating Voltage (V)
Temperature Range
E/W Endurance (Minimum)
Data Retention (Minimum)
Factory Programmed Serial Number
Max. Standby Current (@ 85°C)
Hard Pin Protect
Software Protect
Protected Array Size
Special/Unique Features
Packages
I²C
AT24
C25
6C25
6 Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
6 μA
Y–
WTh
ree
addr
ess
pins
- ca
scad
e up
to e
ight d
evice
s to
sha
re a
com
mon
2-w
ire b
usSO
IC (S
S), T
SSO
P (X
), UD
FN (M
A), U
DFN
(MAP
), VF
BGA
(C)
24xx
512
512
Kb×
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M20
0 Ye
ars
N1
µAY
–W
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eigh
t dev
ices
to s
hare
a c
omm
on 2
-wire
bus
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, DFN
(MF)
, SO
IJ (S
M),
WLC
SP (C
S)
AT24
C51
2C51
2 Kb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
40 Y
ears
N6
μAY
–W
Thre
e ad
dres
s pi
ns -
casc
ade
up to
eigh
t dev
ices
to s
hare
a c
omm
on 2
-wire
bus
SOIC
(SS)
, SO
IJ (S
), TS
SOP
(X),
UDFN
(MA)
, VF
BGA
(C),
WLC
SP (U
)
24xx
1025
/26
1 M
b×
81
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M20
0 Ye
ars
N5
µAY
–W
Two
addr
ess
pins
- ca
scad
e up
to fo
ur d
evice
s to
sha
re a
co
mm
on 2
-wire
bus
, 25
and
26 d
iffere
nce
is ad
dres
s pi
nsPD
IP (P
), SO
IC (S
N), S
OIJ
(SM
)
AT24
CM
011
Mb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
40 Y
ears
N6
μAY
–W
Two
addr
ess
pins
- ca
scad
e up
to fo
ur d
evice
s to
sha
re a
com
mon
2-w
ire b
us.
SOIC
(SS)
, SO
IJ (S
), TS
SOP
(X),
WLC
SP (U
)
AT24
CM
022
Mb
x 8
1 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
6 μA
Y–
WTw
o ad
dres
s pi
ns -
casc
ade
up to
four
dev
ices
to s
hare
a c
omm
on 2
-wire
bus
.SO
IC (S
S), W
LCSP
(U)
48LM
011
Mb
x 8
66
MHz
2.7-
3.6
-40°
C to
+8
5°C
oo10
0 Ye
ars
200
µAN
NW
, ½,
¼Un
limite
d en
dura
nce
to S
RAM
, Dat
a au
tom
atica
lly b
acke
d up
to E
EPRO
M a
nd
pow
er d
own
(with
sm
all e
xter
nal c
apac
itor)
SOIJ
(SM
)
SPI
25xx
010A
1 Kb
× 8
10
MHz
1.8–
5.5
−40°
C to
+1
50°C
1M20
0 Ye
ars
N1
µAY
YW
, ½,
¼5
MHz
@ 2
.5V,
Sta
tus
regi
ster
, 16
byte
pag
ePD
IP (P
), SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY),
6-SO
T-23
(OT)
AT25
010B
1 Kb
× 8
20
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N3.
5 μA
YY
W, ½
, ¼
Supp
orts
SPI
Mod
es 0
(0, 0
) and
3 (1
, 1)
SOIC
(SS)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
)
25xx
020A
2 Kb
× 8
10
MHz
1.8–
5.5
−40°
C to
+1
50°C
1M20
0 Ye
ars
N1
µAY
YW
, ½,
¼5
MHz
@ 2
.5V,
Sta
tus
regi
ster
, 16
byte
pag
e, U
niqu
e EU
I-48/
EUI-6
4 M
AC
addr
ess
and
uniq
ue ID
opt
ions
ava
ilabl
ePD
IP (P
), SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY),
6-SO
T-23
(OT)
25xx
020E
48/ E
64/
UID
2 Kb
× 8
10
MHz
1.8–
5.5
−40°
C to
+1
50°C
1M20
0 Ye
ars
Y1
µAY
YW
, ½,
¼5
MHz
@ 2
.5V,
Sta
tus
regi
ster
, 16
byte
pag
e, U
niqu
e EU
I-48/
EUI-6
4 M
AC
addr
ess
and
uniq
ue ID
opt
ions
ava
ilabl
ePD
IP (P
), SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY),
6-SO
T-23
(OT)
AT25
020B
2 Kb
× 8
20
MHz
1.7–
5.5
-40°
C to
+1
25°C
1M10
0 Ye
ars
N3.
5 μA
YY
W, ½
, ¼
Supp
orts
SPI
Mod
es 0
(0,0
) and
3 (1
,1)
SOIC
(SS)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP)
25xx
040A
4 Kb
× 8
10
MHz
1.8–
5.5
−40°
C to
+1
50°C
1M20
0 Ye
ars
N1
µAY
YW
, ½,
¼5
MHz
@ 2
.5V,
Sta
tus
regi
ster
, 16
byte
pag
ePD
IP (P
), SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY),
6-SO
T-23
(OT)
AT25
040B
4 Kb
× 8
20
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N3.
5 μA
YY
W, ½
, ¼
Supp
orts
SPI
Mod
es 0
(0,0
) and
3 (1
,1)
SOIC
(SS)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
)
25xx
080C
/D8
Kb×
810
M
Hz1.
8–5.
5−4
0°C
to
+150
°C1M
200
Year
sN
1 µA
YY
W, ½
, ¼
16/3
2 by
te p
age,
5 M
Hz @
2.5
V, S
tatu
s re
gist
erPD
IP (P
), SO
IC (S
N), T
SSO
P (S
T), M
SOP
(MS)
, DF
N (M
NY)
AT25
080B
8 Kb
× 8
5 M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
13 μ
AY
YW
, ½,
¼Su
ppor
ts S
PI M
odes
0 (0
,0) a
nd 3
(1,1
)SO
IC (S
S), T
SSO
P (X
), UD
FN (M
A), U
DFN
(MAP
), VF
BGA
(C),
WLC
SP (U
), XD
FN (M
E)
25xx
160C
/D16
Kb
× 8
10
MHz
1.8–
5.5
−40°
C to
+1
50°C
1M20
0 Ye
ars
N1
µAY
YW
, ½,
¼16
/32
byte
pag
e, 5
MHz
@ 2
.5V,
Sta
tus
regi
ster
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
DFN
(MNY
)
AT25
160B
16
Kb×
85
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N13
μA
YY
W, ½
, ¼
Supp
orts
SPI
Mod
es 0
(0,0
) and
3 (1
,1)
SOIC
(SS)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
), XD
FN (M
E)
25xx
320A
32
Kb×
810
M
Hz1.
8–5.
5−4
0°C
to
+150
°C1M
200
Year
sN
1 µA
YY
W, ½
, ¼
5 M
Hz @
2.5
V, S
tatu
s re
gist
er, 3
2 by
te p
age
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
DFN
(MNY
)
AT25
320B
32
Kb×
85
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N13
μA
YY
W, ½
, ¼
Supp
orts
SPI
Mod
es 0
(0,0
) and
3 (1
,1)
SOIC
(SS)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
), XD
FN (M
E)
25xx
640A
64
Kb×
810
M
Hz1.
8–5.
5−4
0°C
to
+150
°C1M
200
Year
sN
1 µA
YY
W, ½
, ¼
5 M
Hz @
2.5
V, S
tatu
s re
gist
er, 3
2 by
te p
age
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, MSO
P (M
S),
DFN
(MNY
, MF)
AT25
640B
64
Kb×
85
MHz
1.7–
5.5
−40°
C to
+1
25°C
1M10
0 Ye
ars
N13
μA
YY
W, ½
, ¼
Supp
orts
SPI
Mod
es 0
(0,0
) and
3 (1
,1)
SOIC
(SS)
, TSS
OP
(X),
UDFN
(MA)
, UDF
N (M
AP),
VFBG
A (C
), XD
FN (M
E)
25xx
128
128
Kb×
810
M
Hz1.
8–5.
5−4
0°C
to
+150
°C1M
200
Year
sN
1 µA
YY
W, ½
, ¼
5 M
Hz @
2.5
V, S
tatu
s re
gist
er, 6
4 by
te p
age
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, DFN
(MF)
AT25
128B
128
Kb×
820
M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
5.0
μAY
YW
, ½,
¼Su
ppor
ts S
PI M
odes
0 (0
,0) a
nd 3
(1,1
)SO
IC (S
S), T
SSO
P (X
), UD
FN (M
A), U
DFN
(MAP
), VF
BGA
(C)
25xx
256
256
Kb×
810
M
Hz1.
8–5.
5−4
0°C
to
+150
°C1M
200
Year
sN
1 µA
YY
W, ½
, ¼
5 M
Hz @
2.5
V, S
tatu
s re
gist
er, 6
4 by
te p
age
PDIP
(P),
SOIC
(SN)
, TSS
OP
(ST)
, DFN
(MF)
, SO
IJ (S
M)
AT25
256B
256
Kb×
820
M
Hz1.
7–5.
5−4
0°C
to
+125
°C1M
100
Year
sN
5.0
μAY
YW
, ½,
¼Su
ppor
ts S
PI M
odes
0 (0
,0) a
nd 3
(1,1
)SO
IC (S
S), S
OIJ
(S),
TSSO
P (X
), UD
FN (M
A),
UDFN
(MAP
), VF
BGA
(C)
www.microchip.com54
Mem
ory
Prod
ucts
: Ser
ial E
EPR
OM
Bus
Product
Density
Organization
Max. Clock Frequency
Operating Voltage (V)
Temperature Range
E/W Endurance (Minimum)
Data Retention (Minimum)
Factory Programmed Serial Number
Max. Standby Current (@ 85°C)
Hard Pin Protect
Software Protect
Protected Array Size
Special/Unique Features
Packages
SPI
25xx
512
512
Kb×
820
M
Hz1.
8–5.
5−4
0°C
to
+125
°C1M
200
Year
sN
10 µ
AY
YW
, ½,
¼10
MHz
@ 2
.5V,
Dee
p po
wer
dow
n, S
tatu
s re
gist
er, P
age/
sect
or/c
hip
eras
ePD
IP (P
), SO
IC (S
N), D
FN (M
F), S
OIJ
(SM
)
AT25
512
512
Kb×
820
M
Hz1.
8–5.
5−4
0°C
to
+85°
C1M
40 Y
ears
N5.
0 μA
YY
W, ½
, ¼
Supp
orts
SPI
Mod
es 0
(0,0
) and
3 (1
,1)
SOIC
(S),
TSSO
P (T
), UD
FN (Y
)
25xx
1024
1 M
b×
820
M
Hz1.
8–5.
5−4
0°C
to
+125
°C1M
200
Year
sN
12 µ
AY
YW
, ½,
¼10
MHz
@ 2
.5V,
Dee
p po
wer
dow
n, S
tatu
s re
gist
er, P
age/
sect
or/c
hip
eras
ePD
IP (P
), DF
N (M
F), S
OIJ
(SM
)
AT25
M01
1 M
b×
820
M
Hz1.
7–5.
5−4
0°C
to
+85°
C1M
100
Year
sN
5.0
μAY
YW
, ½,
¼Su
ppor
ts S
PI M
odes
0 (0
,0) a
nd 3
(1,1
)SO
IC (S
S), S
OIJ
(S),
UDFN
(MF)
, WLC
SP (U
)
AT25
M02
2 M
b×
85
MHz
1.7–
5.5
−40°
C to
+8
5°C
1M40
Yea
rsN
3.0
μAY
YW
, ½,
¼Su
ppor
ts S
PI M
odes
0 (0
,0) a
nd 3
(1,1
)SO
IC (S
S), W
LCSP
(U)
Mem
ory
Prod
ucts
: Ser
ial R
AM
Bus
Product
Density
Organization
Max. Clock Frequency
Operating Voltage (V)
Temperature Range (°C)
E/W Endurance (Minimum)
Data Retention (Minimum)
Max. Standby Current (85°C)
Hard Pin Protect
Software Protect
Protected Array Size
Special/ Unique Features
Packages
Seria
l SR
AM
SPI
23x6
4064
Kb
× 8
20 M
Hz1.
5–1.
95,
2.7–
3.6
−40
to +
125
∞Vo
latile
4 µA
––
–Ze
ro w
rite
cycle
tim
e, In
finite
end
uran
ce, V
olat
ile R
AM,
Byte
/pag
e/se
quen
tial r
ead-
writ
e m
odes
PDIP
(P),
SOIC
(SN)
, TS
SOP
(ST)
23x2
5625
6 Kb
× 8
20 M
Hz1.
5–1.
95,
2.7–
3.6
−40
to +
125
∞Vo
latile
4 µA
––
–Ze
ro w
rite
cycle
tim
e, In
finite
end
uran
ce, V
olat
ile R
AM,
Byte
/pag
e/se
quen
tial r
ead-
writ
e m
odes
PDIP
(P),
SOIC
(SN)
, TS
SOP
(ST)
23xx
512
512
Kb×
820
MHz
1.7–
2.2,
2.
5–5.
5−4
0 to
+12
5∞
Volat
ile4
µA–
––
Fast
Spe
ed: Q
uad
SPI a
vaila
ble
(80
MHz
), In
finite
end
uran
ce,
Zero
writ
e tim
es, 5
V ca
pabl
eSO
IC (S
N), P
DIP
(P),
TSSO
P (S
T)
23xx
1024
1024
Kb
× 8
20 M
Hz1.
7–2.
2,
2.5–
5.5
−40
to +
125
∞Vo
latile
4 µA
––
–Fa
st S
peed
: Qua
d SP
I ava
ilabl
e (8
0 M
Hz),
Infin
ite e
ndur
ance
, Ze
ro w
rite
times
, 5V
capa
ble
SOIC
(SN)
, PDI
P (P
), TS
SOP
(ST)
Seria
l NVS
RAM
SPI
23LC
V512
512
Kb×
820
MHz
2.5–
5.5
−40
to +
85∞
20 Y
ears
via
batte
ry4
µA–
––
Batte
ry-b
acke
d no
n-vo
latile
SRA
M, I
nfini
te e
ndur
ance
, Zer
o w
rite
times
SOIC
(SN)
, PDI
P (P
), TS
SOP
(ST)
23LC
V102
410
24 K
b×
820
MHz
2.5–
5.5
−40
to +
85∞
20 Y
ears
via
batte
ry4
µA–
––
Batte
ry b
acke
d no
n-vo
latile
SRA
M, I
nfini
te e
ndur
ance
, Zer
o w
rite
times
SOIC
(SN)
, PDI
P (P
), TS
SOP
(ST)
Seria
l EER
AM
I²C
47x0
44
Kb×
81
MHz
2.7–
3.6,
4.
5–5.
5−4
0 to
+12
5∞
200
Year
s40
µA
–Y
W to
1/6
4Un
limite
d en
dura
nce
to S
RAM
, Dat
a au
tom
atica
lly b
acke
d up
to E
EPRO
M a
nd
pow
er d
own
(with
sm
all e
xter
nal c
apac
itor)
SOIC
(SN)
, PDI
P (P
), TS
SOP
(ST)
47x1
616
Kb
× 8
1 M
Hz2.
7–3.
6,
4.5–
5.5
−40
to +
125
∞20
0 Ye
ars
40 µ
A–
YW
to 1
/64
Unlim
ited
endu
ranc
e to
SRA
M, D
ata
auto
mat
ically
bac
ked
up to
EEP
ROM
and
at
pow
er d
own
(with
sm
all e
xten
al ca
pacit
or)
SOIC
(SN)
, PDI
P (P
), TS
SOP
(ST)
SPI
47L6
464
Kb
x 8
1 M
Hz2.
7-3.
6-4
0°C
to +
85°C
oo10
0 Ye
ars
200
µAY
N¼
Unlim
ited
endu
ranc
e to
SRA
M, D
ata
auto
mat
ically
bac
ked
up to
EEP
ROM
and
po
wer
dow
n (w
ith s
mall
ext
erna
l cap
acito
r)SO
IC (S
N), T
DFN
(MNY
)
48L6
4064
Kb
x 8
66 M
Hz2.
7-3.
6-4
0°C
to +
85°C
oo10
0 Ye
ars
200
µAN
NW
, ½, ¼
Unlim
ited
endu
ranc
e to
SRA
M, D
ata
auto
mat
ically
bac
ked
up to
EEP
ROM
and
po
wer
dow
n (w
ith s
mall
ext
erna
l cap
acito
r)SO
IC (S
N), T
DFN
(MNY
)
48L2
5625
6 Kb
x 8
66 M
Hz2.
7-3.
6-4
0°C
to +
85°C
oo10
0 Ye
ars
300
µAN
NW
, ½, ¼
Unlim
ited
endu
ranc
e to
SRA
M, D
ata
auto
mat
ically
bac
ked
up to
EEP
ROM
and
po
wer
dow
n (w
ith s
mall
ext
erna
l cap
acito
r)SO
IC (S
N)
48L5
1251
2 Kb
x 8
66 M
Hz2.
7-3.
6-4
0°C
to +
85°C
oo10
0 Ye
ars
200
µAN
NW
, ½, ¼
Unlim
ited
endu
ranc
e to
SRA
M, D
ata
auto
mat
ically
bac
ked
up to
EEP
ROM
and
po
wer
dow
n (w
ith s
mall
ext
erna
l cap
acito
r)SO
IC (S
N)
48LM
011
Mb
x 8
66 M
Hz2.
7-3.
6-4
0°C
to +
85°C
oo10
0 Ye
ars
200
µAN
NW
, ½, ¼
Unlim
ited
endu
ranc
e to
SRA
M, D
ata
auto
mat
ically
bac
ked
up to
EEP
ROM
and
po
wer
dow
n (w
ith s
mall
ext
erna
l cap
acito
r)SO
IJ (S
M)
Focus Product Selector Guide 55
Wire
less
Pro
duct
s: W
i-Fi®
Mod
ules
Prod
uct
Rad
io
Pin Count
Antenna
Frequency Range (GHz)
Sensitivity (dBm)
Power Output (dBm)
Tx Power Consumption (mA)
Rx Power Consumption (mA)
Test
ed T
hrou
ghpu
t M
bps
Encryption/Security
Interface
Packages (Dimensions)
Downlink
Uplink
ATSA
MW
2580
2.11
b/g
/n51
Chip
, PCB
, U.F
L2.
412–
2.47
2−9
817
264
61TC
P: 1
0 UD
P: 1
5TC
P: 8
UD
P: 1
1W
EP, W
PA/W
PA2
Pers
onal
and
Ente
rpris
e, T
LSSP
I51
/Mod
ule
(3
3.9
x 14
.9 m
m)
ATW
INC
15x0
802.
11 b
/g/n
28Ch
ip, P
CB, U
.FL
2.41
2–2.
472
−89
1726
461
TCP:
11
UDP:
19
TCP:
10
UDP:
12
WEP
, WPA
/WPA
2 Pe
rson
al an
d En
terp
rise,
TLS
SPI
28/M
odul
e
(21.
7 x
14.7
mm
)
ATW
INC
3400
-MR
802.
11 b
/g/n
and
BLE
36Ch
ip2.
412–
2.48
4−9
64
(BLE
), 14
(W
i-Fi®
)35
0 (W
i-Fi)
92 (W
i-Fi),
45 (B
LE)
TCP:
3
UDP:
6TC
P: 5
UD
P: 5
WEP
, WPA
/WPA
2 Pe
rson
alSP
I, UA
RT37
/Mod
ule
(2
2.4
x 14
.7 m
m)
ATW
ILC
1000
-MR
802.
11 b
/g/n
28PC
B2.
412–
2.48
4−9
615
289
52.5
Linu
x®
TCP:
26
UDP:
46
Linu
xTC
P: 2
0
UDP:
25
WEP
, WPA
/WPA
2 Pe
rson
al an
d En
terp
rise,
TLS
(Lin
ux)
WEP
, WPA
/WPA
2 Pe
rson
al an
d En
terp
rise
(RTO
S)SP
I, SD
IO29
/Mod
ule
(2
1.5
x 14
.5 m
m)
ATW
ILC
3000
-MR
802.
11 b
/g/n
and
BLE
36Ch
ip2.
412–
2.48
4−9
64
(BLE
), 14
(W
i-Fi)
295
(Wi-F
i), 11
0 (B
LE)
86 (W
i-Fi),
45 (B
LE)
Linu
xTC
P: 2
8 UD
P: 1
6
Linu
xTC
P: 2
0 UD
P: 2
4
WEP
, WPA
/WPA
2 Pe
rson
al an
d En
terp
rise,
TLS
(Lin
ux)
WEP
, WPA
/WPA
2 Pe
rson
al (R
TOS)
SPI,
SDIO
, UA
RT37
/Mod
ule
(2
2.4
x 14
.7 m
m)
Wire
less
Pro
duct
s: IE
EE 8
02.1
5.4
Tran
scei
vers
/Mod
ules
Product
Pin Count
Antenna
Frequency Range (GHz)
Sensitivity (dBm)
Power Output (dBm)
RSSI
Tx Power Consumption (mA)
Rx Power Consumption (mA)
Clock (MHz)
Sleep
MAC
MAC Features
Protocols
Encryption
Interface
Packages (Dimensions)
AT86
RF21
548
–.3
895
–2.4
83–1
23+1
4.5
Yes
6228
26.0
3 m
AYe
s–
zigbe
e®, M
iWi™
wire
less
netw
orkin
g pr
otoc
ol–
I/Q48
QFN
AT86
RF23
332
–2.
4–1
014
Yes
13.8
11.8
16.0
2 m
AYe
sCS
MA-
CAzig
bee,
MiW
i wire
less
netw
orkin
g pr
otoc
olAE
S128
SPI
32 Q
FNAT
86RF
212B
32–
.769
–.9
30–1
1011
Yes
189.
216
.2 m
AYe
sCS
MA-
CAzig
bee,
MiW
i wire
less
netw
orkin
g pr
otoc
olAE
S128
SPI
32 Q
FNM
R.F2
4J40
40–
2.40
5–2.
48−9
50
Yes
2319
202
µAYe
sCS
MA-
CAzig
bee,
MiW
i wire
less
netw
orkin
g pr
otoc
olAE
S128
4-w
ire S
PI40
/QFN
MRF
24J4
0MA
12PC
B2.
405–
2.48
−94
0Ye
s23
1920
2 µA
Yes
CSM
A-CA
zigbe
e, M
iWi w
ireles
s ne
twor
king
prot
ocol
AES1
284-
wire
SPI
12/M
odul
e (1
7.8
× 27
.9 m
m)
MRF
24J4
0MD
12PC
B2.
405–
2.48
−104
+19
Yes
140
3220
10 µ
AYe
sCS
MA-
CAzig
bee,
MiW
i wire
less
netw
orkin
g pr
otoc
olAE
S128
4-w
ire S
PI12
/Mod
ule
(17.
8 ×
27.9
mm
)M
RF24
J40M
E12
U.FL
2.40
5–2.
48−1
04+1
9Ye
s14
032
2010
µA
Yes
CSM
A-CA
zigbe
e, M
iWi w
ireles
s ne
twor
king
prot
ocol
AES1
284-
wire
SPI
12/M
odul
e (1
7.8
× 27
.9 m
m)
1. I
ndica
tes
off c
urre
nt fo
r slee
p co
lum
n. 2
. Su
ppor
ted
in th
e pr
ovid
ed s
tack
.
Wire
less
Pro
duct
s: B
luet
ooth
®
Product
Functionality
No Shield Option
Rx Sensitivity (dBm)
Power Output (dBm) (typ.)
Sleep
Profiles
Interface
Pin Count
Packages (Dimensions)
RN40
20Da
ta, S
ingl
e-M
ode
BLE
No−9
2.5
7Do
rman
t < 7
00 n
A,
deep
slee
p <
5.0
μAG
AP, G
ATT,
SM
, L2C
AP,
inte
grat
ed p
ublic
pro
files
UART
, PIO
, AIO
, SPI
24M
odul
e
11.5
× 1
9.5
mm
BM70
Data
, Sin
gle-
Mod
e BL
EYe
s−9
00
Pow
er S
avin
g 1
μAG
AP, G
ATT,
SM
, L2C
AP,
Inte
grat
ed p
ublic
pro
files
UART
, I² C
, SPI
, ADC
, PW
M, G
PIO
s33
Mod
ule
22
× 1
2 ×
2.4
mm
15
× 1
2 ×
1.8
mm
BM71
Data
, Sin
gle-
Mod
e BL
EYe
s−9
00
Pow
er S
avin
g 1
μAG
AP, G
ATT,
SM
, L2C
AP,
Inte
grat
ed p
ublic
pro
files
UART
, I² C
, SPI
, ADC
, PW
M, G
PIO
s17
Mod
ule
9
× 11
.5 ×
2.1
mm
6
× 8
× 1.
6 m
m
BM78
Data
, Dua
l-Mod
eYe
s−9
0 (B
R/ED
R)
−92
LE2
Deep
Pow
er D
own
130
μA
GAP
, SPP
, SDP
, RFC
OM
M, L
2CAP
G
AP, G
ATT,
ATT
, SM
P, L
2CAP
UART
, I² C
, GPI
Os
33M
odul
e
22 ×
12
× 2.
4 m
m
15 ×
12
× 1.
8 m
m
RN46
78Da
ta, D
ual-M
ode
Yes
−90
(BR/
EDR)
−9
2 LE
2De
ep P
ower
Dow
n 13
0 μA
GAP
, SPP
, SDP
, RFC
OM
M, L
2CAP
G
AP, G
ATT,
ATT
, SM
P, L
2CAP
UART
, I² C
, GPI
Os
33M
odul
e
22 ×
12
× 2.
4 m
m
15 ×
12
× 1.
8 m
m
BM20
Audi
oYe
s−9
14
Syst
em O
ff 2
μAHF
P, H
SP, A
2DP,
AVR
CP, S
PP, P
CAP
Analo
g au
dio
out,
mic
in, l
ine
in, U
ART
40M
odul
e
29 ×
15
× 2.
5 m
m
www.microchip.com56
Wire
less
Pro
duct
s: B
luet
ooth
®
Product
Functionality
No Shield Option
Rx Sensitivity (dBm)
Power Output (dBm) (typ.)
Sleep
Profiles
Interface
Pin Count
Packages (Dimensions)
BM23
Audi
oYe
s−9
14
Syst
em O
ff 2
μAHF
P, H
SP, A
2DP,
AVR
CP, S
PP, P
CAP
I2 S D
igita
l aud
io o
ut, m
ic in
, lin
e in
, UAR
T43
Mod
ule
29
× 1
5 ×
2.5
mm
BM62
Audi
oYe
s−9
0+2
(Clas
s 2)
Syst
em <
10
μAHF
P, A
VRCP
, A2D
P, H
SP, S
PPUA
RT37
Mod
ule
29
x 1
5 x
2.5
mm
BM83
Audi
o (B
BC, A
AC, L
DAC)
No−9
08.
5 dB
m
(Clas
s 1)
Syst
em <
10
μAHF
P, H
SP, A
2DP,
AVR
CP, S
PP, P
CAP,
M
AP, D
IS, A
NO5
Line
in, m
ic in
, ADC
, IS,
I²C,
UAR
T, U
SB,
GPI
Os
50M
odul
e
32 x
15
mm
BM64
Audi
oYe
s−9
0+1
5 (C
lass
1),
+2 (C
lass
2)Sy
stem
< 1
0 μA
HFP,
AVR
CP, A
2DP,
HSP
, SPP
UART
43M
odul
e
32 x
15
x 2.
5 m
m
Wire
less
Pro
duct
s: B
luet
ooth
ICs
IS20
62Au
dio
Yes
−90
+2 (C
lass
2)Sy
stem
< 2
0 μA
HFP,
AVR
CP, A
2DP,
HSP
, SPP
UART
56LG
A (7
x 7
mm
) IS
2063
Audi
o−9
0+2
(Clas
s 2)
Syst
em <
20
μAHF
P, A
VRCP
, A2D
P, H
SP, S
PPUA
RT82
BGA
(5 x
5 m
m)
IS20
64Au
dio
Yes
−90
+15
(Clas
s 1)
, +2
(Clas
s 2)
Syst
em <
20
μAHF
P, A
VRCP
, A2D
P, H
SP, S
PPUA
RT68
, 61
68 L
GA
(8 x
8 x
1.0
mm
), 68
QFN
(8 x
8 x
0.9
m
m),
61 B
GA
(5 x
5 x
0.9
mm
) IS
2066
Audi
o (S
BC, A
AC)
−90
+2 (C
lass
2)–
HFP,
AVR
CP, A
2DP,
HSP
, SPP
mic
in, a
nalo
g ou
t, DA
C50
BGA
(5 x
3.5
mm
)
IS20
21S
Audi
oNo
−90
4Sh
owdo
wn
< 1
μAAu
dio:
HFP
, HSP
, A2D
P, A
VRCP
, SPP
, PB
APUA
RT48
, 56,
68
5 ×
6.5
mm
48
QFN
(IS2
021S
) 7
× 7
mm
56
QFN
(IS2
020S
, IS2
023S
) 8
× 8
mm
68
QFN
(IS2
025S
)
Wire
less
Pro
duct
s: S
ub-G
Hz
Tran
scei
vers
/Mod
ules
Prod
uct
Pin
Cou
ntFr
eque
ncy
Ran
ge (M
Hz)
Sens
itivi
ty
(dBm
)Po
wer
Out
put
(dBm
)R
SSI
TX P
ower
C
onsu
mpt
ion
(mA)
RX
Pow
er
Con
sum
ptio
n (m
A)C
lock
Slee
pIn
terf
ace
Pack
ages
MRF
89XA
M8A
12
868
−113
12.5
Yes
25 m
A @
+10
dBm
312
.8 M
Hz0.
1 µA
4-w
ire S
PI12
/Mod
ule
(17.
8 ×
27.9
mm
)M
RF89
XAM
9A
1291
5−1
1312
.5Ye
s25
mA
@ +
10 d
Bm3
12.8
MHz
0.1
µA4-
wire
SPI
12/M
odul
e (1
7.8
× 27
.9 m
m)
MRF
89XA
32
868/
915/
950
−113
12.5
Yes
25 m
A @
+10
dBm
312
.8 M
Hz0.
1 µA
4-w
ire S
PI32
-pin
TQ
FNAT
SAM
R30
32/4
877
9/93
0up
to −
110
11Ye
s18
.2 m
A @
5 d
Bm9.
448
MHz
0.45
SPI,
USAR
T, I² C
, LIN
(5 ×
5 m
m) 3
2-pi
n Q
FN, (
7 ×
7 m
m) 4
8-pi
n Q
FNAT
SAM
R30M
32/4
877
9/93
0up
to −
105
8.7
Yes
18.7
mA
@ 5
dBm
9.4
48 M
Hz0.
45SP
I, US
ART,
I² C, L
IN(1
1 ×
127
mm
) Mod
ule
Wire
less
Pro
duct
s: S
ub-G
Hz
Tran
smitt
ers
Prod
uct
Pin
Cou
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eque
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Ran
ge (M
Hz)
Mod
ulat
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Dat
a R
ate
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MIC
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210
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Sens
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Out
put
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Con
sum
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RF21
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300–
450
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RF22
016
300–
450
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4.3
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16-p
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MIC
RF22
116
850–
950
−109
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K/O
OK
9–
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PM
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229
1640
0–45
0−1
12–
Yes
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OO
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RF23
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400–
450
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6–
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Wire
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Mod
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Pin
Cou
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Sens
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Out
put
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C
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Con
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915
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124
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47/M
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7.8
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3 m
m)
Focus Product Selector Guide 57
USB
Pro
duct
s
Prod
uct
Des
crip
tion
Proc
esso
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erfa
ce#
of D
owns
trea
m P
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Car
d Fo
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dust
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USB
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-Spe
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pplic
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-Spe
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-Spe
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mar
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licat
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t opt
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terfa
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tom
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tom
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USB
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mot
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mar
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Proc
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orts
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ntro
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tom
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16-p
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i-Spe
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peed
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Focus Product Selector Guide 59
Wire
less
Pro
duct
s: L
oRa®
Tec
hnol
ogy
Mod
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Prod
uct
Pin
Cou
ntFr
eque
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ge (M
Hz)
Sens
itivi
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Out
put
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SSI
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ower
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ratin
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ltage
Pack
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12F5
29T3
9A6
310–
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2.3K
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11
18
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OO
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SSO
PPI
C12
LF18
40T3
9A6
310–
928
7.1K
256
256
21
32Ye
sO
OK/
FSK
100
101.
8–3.
614
-pin
TSS
OP
PIC
16LF
1824
T39A
2031
0–92
84K
256
256
11
32Ye
sO
OK/
FSK
100
101.
8–3.
620
-pin
TSS
OP
rfPIC
12F6
75F
638
0–45
01.
7K12
864
11
20Ye
sAS
K/FS
K40
102.
0–5.
520
-pin
SSO
PrfP
IC12
F675
H
685
0–93
01.
7K12
864
11
20Ye
sAS
K/FS
K40
102.
0–5.
520
-pin
SSO
PrfP
IC12
F675
K 6
290–
350
1.7K
128
641
120
Yes
ASK/
FSK
4010
2.0–
5.5
20-p
in S
SOP
Tim
berw
olf™
Aud
io P
roce
ssor
s
Prod
uct
Pinc
ount
Hos
t Int
erfa
cePe
riphe
rals
Audi
o In
terf
ace
IP C
amer
aAu
to S
peec
h R
ecog
nitio
n (A
SR)
Auto
(afte
rmar
ket)
USB
Aud
io
ZL38
050
56/6
4SP
I, I² C
GPI
Os,
UAR
T, S
PIDi
gita
l Mic
(1),
Ster
eo D
AC, I
2 S/T
DM (2
)ü
ZL38
051
56/6
4SP
I, I² C
GPI
Os,
UAR
T, S
PIDi
gita
l Mic
(2),
Ster
eo D
AC, I
2 S/T
DM (2
)ü
ZL38
052
56/6
4SP
I, I² C
GPI
Os,
UAR
T, S
PIDi
gita
l Mic
(2),
Ster
eo D
AC, I
2 S/T
DM (2
)ü
ZL38
AMB
56/6
4SP
I, I² C
GPI
Os,
UAR
T, S
PIDi
gita
l Mic
(2),
Ster
eo D
AC, I
2 S/T
DM (2
)ü
ZL38
063
64SP
I, I² C
GPI
Os,
UAR
T, S
PIDi
gita
l Mic
(3),
Ster
eo D
AC, I
2 S/T
DM (2
)ü
ZL38
067
56/6
4SP
I, I² C
GPI
Os,
UAR
T, S
PIDi
gita
l Mic
(1),
Ster
eo D
AC, I
2 S/T
DM (2
)ü
ZL38
080
64SP
I, I² C
GPI
Os,
UAR
T, S
PIDi
gita
l Mic
(1),
Ster
eo D
AC, I
2 S/T
DM (2
)ü
ZL38
090
56/6
4SP
I, I² C
GPI
Os,
UAR
T, S
PIDi
gita
l Mic
(1),
Ster
eo D
AC, I
2 S/T
DM (2
)ü
Ethe
rnet
Pro
duct
s
Prod
uct
Band
wid
thPo
rts
Inte
rfac
e (U
pstr
eam
)15
88–v
2C
able
Dia
gs10
0 Fx
Tem
pera
ture
AEC
-Q10
0 Au
toPa
ckag
esEt
hern
et S
witc
hes
KSZ8
795
10/1
005
GM
II/RG
MII/
MII/
RMII
–ü
––4
0ºC
to +
85ºC
–80
-pin
LQ
FPKS
Z886
310
/100
3M
II/RM
II–
üü
–40º
C to
+85
ºC–
48-p
in L
QFP
KSZ8
864
10/1
004
MII/
RMII
–ü
––4
0ºC
to 1
05ºC
ü64
-pin
VQ
FNKS
Z887
310
/100
3M
II/RM
II–
üü
–40º
C to
105
ºCü
64-p
in V
QFN
KSZ8
895
10/1
005
MII/
RMII
–ü
––4
0ºC
to +
85ºC
ü12
8-pi
n LQ
FPKS
Z947
7G
igab
it7
SGM
II/RG
MII/
MII/
RMII
1588
+ A
VB +
HDR/
DLR
Link
MD+
with
sig
nal q
uality
indi
cato
rw
ith S
GM
II–4
0ºC
to +
85ºC
–12
8-pi
n LQ
FP
KSZ9
563
Gig
abit
3SG
MII/
RGM
II/M
II/RM
II15
88 +
AVB
Link
MD+
with
sig
nal q
uality
indi
cato
rw
ith S
GM
II–4
0ºC
to +
85ºC
–64
-pin
QFN
, 12
8-pi
n LQ
FPKS
Z956
7G
igab
it7
SGM
II/RG
MII/
MII/
RMII
1588
+ A
VBLi
nkM
D+ w
ith s
igna
l qua
lity in
dica
tor
with
SG
MII
–40º
C to
+85
ºC–
128-
pin
TQFP
-EP
KSZ9
893
Gig
abit
3SG
MII/
RGM
II/M
II/RM
II–
ü–
–40º
C to
+85
ºC–
64-p
in Q
FN,
128-
pin
LQFP
KSZ9
896
Gig
abit
6RG
MII/
GM
II/M
II/RM
II–
ü–
–40º
C to
+85
ºC–
128-
pin
TQFP
KSZ9
897
Gig
abit
7RG
MI/S
GM
II/M
II/RM
II–
üw
ith S
GM
II–4
0ºC
to +
85ºC
–12
8-pi
n TQ
FP
VSC
7511
10/1
00/1
000/
2500
Mbp
s4
SGM
II 10
00Ba
se-T
(4)
–ü
100F
X,
1000
X–4
0ºC
to +
125º
C–
172/
VQFN
VSC
7512
10/1
00/1
000/
2500
Mbp
s10
SGM
II, Q
SGM
II 10
00Ba
se-T
(4)
–ü
100F
X,
1000
X–4
0ºC
to +
125º
C–
172/
VQFN
VSC
7513
10/1
00/1
000/
2500
Mbp
s8
SGM
II, Q
SGM
II 10
00Ba
se-T
(4)
üü
100F
X,
1000
X–4
0ºC
to 1
25ºC
–25
6/PB
GA
VSC
7514
10/1
00/1
000/
2500
Mbp
s10
SGM
II, Q
SGM
II 10
00Ba
se-T
(4)
üü
100F
X,
1000
X–4
0ºC
to +
125º
C–
256/
PBG
A
VSC
7420
10/1
00/1
000/
2500
Mbp
s10
SG
MII
1000
Base
-T (8
)–
ü10
0FX,
10
00X
–40º
C to
+12
5ºC
–67
2/HS
BGA
VSC
7421
10/1
00/1
000/
2500
Mbp
s17
SG
MII,
QSG
MII
1000
Base
-T (1
2)–
ü10
0FX,
10
00X
–40º
C to
+12
5ºC
–67
2/HS
BGA
VSC
7422
10/1
00/1
000/
2500
Mbp
s25
SG
MII,
QSG
MII
1000
Base
-T (1
2)–
ü10
0FX,
10
00X
–40º
C to
+12
5ºC
–67
2/HS
BGA
VSC
7423
10/1
00/1
000/
2500
Mbp
s7
SG
MII
1000
Base
-T (5
)ü
ü10
0FX,
10
00X
–40º
C to
+12
5ºC
–67
2/HS
BGA
VSC
7424
10/1
00/1
000
Mbp
s10
SGM
II 10
00Ba
se-T
(8)
–ü
100F
X,
1000
X0º
C to
125
ºC–
672/
HSBG
A
VSC
7425
10/1
00/1
000
Mbp
s18
SGM
II, Q
SGM
II 10
00Ba
se-T
(12)
–ü
100F
X,
1000
X0º
C to
125
ºC–
672/
HSBG
A
VSC
7426
10/1
00/1
000
Mbp
s24
QSG
MII
1000
Base
-T (1
2)–
ü–
0ºC
to 1
25ºC
–67
2/HS
BGA
VSC
7427
10/1
00/1
000
Mbp
s26
SGM
II, Q
SGM
II 10
00Ba
se-T
(12)
–ü
100F
X,
1000
X0º
C to
125
ºC–
672/
HSBG
A
VSC
7440
10/1
00/1
000/
2500
Mbp
s 10
Gbp
s10
SGM
II 10
00Ba
se-T
XFI
üü
100F
X,
1000
X, S
FI–4
0ºC
to +
125º
C–
324/
PBG
A
VSC
7448
10/1
00/1
000/
2500
Mbp
s 10
Gbp
s52
SGM
II, Q
SGM
II XF
I, XA
UI,
RXAU
Iü
–10
0FX,
10
00X,
SFI
–40º
C to
+11
0ºC
–67
2/HF
CBG
A
VSC
7449
10/1
00/1
000/
2500
Mbp
s 10
Gbp
s52
SGM
II, Q
SGM
II XF
I, XA
UI,
RXAU
Iü
–10
0FX,
10
00X,
SFI
–40º
C to
+11
0ºC
–67
2/HF
CBG
A
*VSC
par
ts J
unct
ion
tem
pera
ture
(Tja)
www.microchip.com60
Ethe
rnet
Pro
duct
s
Prod
uct
Band
wid
thPo
rts
Inte
rfac
e (U
pstr
eam
)15
88v2
Wak
e-O
n-LA
NEE
ETe
mpe
ratu
reAE
C-Q
100
Auto
Pack
ages
Ethe
rnet
Con
trol
lers
ENC
28J6
010
1SP
I–
––
–40º
C to
+85
ºC–
28-p
in S
PDIP
, SSO
P, S
OIC
, QFN
ENC
624J
600
10/1
001
SPI/P
arall
el–
––
–40º
C to
+85
ºC–
24-p
in T
QFN
, QFN
, 64-
pin
TQFN
LAN
9217
10/1
001
16-b
it Ho
st B
us/M
II–
––
––
100-
pin
TQFP
LAN
9218
10/1
001
32-b
it Ho
st B
us–
––
–40º
C to
+85
ºC–
100-
pin
TQFP
LAN
9220
/110
/100
116
-bit
Host
Bus
––
––4
0ºC
to +
85ºC
–56
-pin
QFN
LAN
9250
10/1
001
SPI,
SQITM
, HBI
–ü
ü–4
0ºC
to +
85ºC
–64
-pin
QFN
, 64-
pin
TQFP
-EP
LAN
9420
10/1
001
32-b
it PC
I 3.0
––
––4
0ºC
to +
85ºC
–12
8-pi
n VT
QFP
LAN
8921
810
/100
132
-bit
Host
Bus
––
––4
0ºC
to +
105º
Cü
100-
pin
TQFP
KSZ8
851
10/1
001
8-/1
6-/3
2-bi
t or S
PI–
ü–
–40º
C to
+10
5ºC
ü32
-pin
QFN
, 48-
pin
LQFP
, 128
-pin
PQ
FPKS
Z885
210
/100
18-
/16-
/32-
bit
–ü
üI
–64
-pin
LQ
FPKS
Z844
110
/100
18-
/16-
/32-
bit o
r SPI
–ü
üI
–64
-pin
LQ
FPEt
hern
et T
rans
ceiv
ers
(PH
Ys)
LAN
8710
A10
/100
1M
II/RM
II–
––
–40º
C to
+85
ºC–
32-p
in Q
FNLA
N87
20A
10/1
001
RMII
––
––4
0ºC
to +
85ºC
–24
-pin
QFN
LAN
8740
A10
/100
1M
II/RM
II–
üü
–40º
C to
+85
ºC–
32-p
in Q
FNLA
N87
41A
10/1
001
MII/
RMII
––
ü–4
0ºC
to +
85ºC
–32
-pin
QFN
LAN
8742
A10
/100
1RM
II–
ü–
–40º
C to
+85
ºC–
24-p
in Q
FNLA
N88
730
10/1
001
MII/
RMII
––
––4
0ºC
to +
105º
Cü
32-p
in Q
FNKS
Z805
110
/100
1M
II/RM
II–
––
–40º
C to
+10
5ºC
ü32
-pin
QFN
KSZ8
061
10/1
001
MII/
RMII
–ü
––4
0ºC
to +
105º
Cü
32-/4
8-pi
n Q
FNKS
Z808
110
/100
1M
II/RM
II–
––
–40º
C to
+85
ºC–
24-/3
2-pi
n Q
FN, 4
8-pi
n LQ
FPKS
Z809
110
/100
1M
II/RM
II–
üü
–40º
C to
+85
ºC–
24-/3
2-pi
n Q
FN, 4
8-pi
n LQ
FPLA
N88
10G
igab
it1
GM
II–
– –
–40º
C to
+85
ºC–
72-p
in Q
FNLA
N88
20G
igab
it1
RGM
II–
––
–40º
C to
+85
ºC–
56-p
in Q
FNKS
Z903
1G
igab
it1
MII/
RMII/
RGM
II–
ü–
–40º
C to
+10
5ºC
ü48
-/64-
pin
QFN
KSZ9
131
Gig
abit
1M
II/RM
II/RG
MII
–ü
ü–4
0ºC
to +
105º
Cü
48-/6
4-pi
n Q
FNVS
C85
31G
igab
it1
RMII/
RGM
II–
üü
–40º
C to
+12
5ºC*
–48
pin
QFN
VS
C85
41G
igab
it1
GM
II/M
II//R
MII/
RGM
II–
üü
–40º
C to
+12
5ºC*
–68
pin
QFN
VSC
8584
Gig
abit
4 Cu
/4
Fbr
QSG
MII/
SGM
IIü
üü
–40º
C to
+12
5ºC*
–25
6 pi
n Q
FN
VSC
8258
10G
Opt
ical
4Cu
XFI,
SFI,
KRü
üü
–40º
C to
+12
5ºC*
–25
6 pi
n Q
FN
VSC
8490
10G
Opt
ical
2Cu
XAUI
, RXA
UI, X
FI, S
FIü
üü
–40º
C to
+12
5ºC*
–19
6 pi
n Q
FN
*VSC
par
ts J
unct
ion
tem
pera
ture
(Tja)
Hig
h-Sp
eed
Ethe
rnet
PH
Ys
Prod
uct
Des
crip
tion
Max
Ba
ndw
idth
G
bps
MAC
sec
Flex
EIn
terla
ken
Retim
erG
earb
oxC
ross
poin
t#
Ports
Max
por
t ra
te
Max
SE
RDES
Ra
te G
bps
RoH
S
PM61
104
MET
A-DX
1 Et
hern
et P
HY (w
ithou
t M
ACse
c/Fl
exE)
1200
––
–ü
üü
1240
0GbE
56ü
PM61
108
MET
A-DX
1 Et
hern
et P
HY (w
ithou
t Flex
E)12
00ü
–ü
üü
ü12
400G
bE56
ü
PM61
110
MET
A-DX
1 Et
hern
et P
HY F
amily
(M
ACse
c/Fl
exE)
1200
üü
üü
üü
1240
0GbE
56ü
Focus Product Selector Guide 61
Auto
mot
ive:
Med
ia O
rient
ed S
yste
ms
Tran
spor
t (M
OST
®) N
etw
ork
Infe
rfac
e C
ontr
olle
rs
Inte
llige
nt N
etw
ork
Inte
rfac
e C
ontr
olle
r (IN
IC) f
or M
OST
Net
wor
ks
Prod
uct
Feat
ures
Inte
rfac
eAm
bien
t Tem
pera
ture
R
ange
Pin
Pack
age
OS8
1110
INIC
Fully
-enc
apsu
lated
, sin
gle-
chip
, sin
gle
MO
ST15
0 ne
twor
k po
rt, e
mbe
dded
net
wor
k m
anag
emen
t, su
ppor
ts M
OST
em
bedd
ed E
ther
net c
hann
el an
d iso
chro
nous
cha
nnels
(MO
ST15
0)M
OST
150
FOT
or e
xter
nal M
OST
150
coax
tran
sceiv
er, I
²C, I
²S/S
PDIF,
TSI
, SP
I, RM
CK, J
TAG
, Med
iaLB®
3-P
in, M
ediaL
B bu
s 6-
Pin
−40°
C to
105
°C48
QFN
OS8
1082
INIC
Fully
-enc
apsu
lated
, sin
gle-
chip
, em
bedd
ed n
etw
ork
man
agem
ent (
MO
ST50
)M
OST
50 e
lectri
cal (U
TP),
I²C, I
²S®, M
ediaL
B−4
0°C
to 9
5°C
64ET
QFP
OS8
1092
INIC
ROM
ver
sion
of O
S810
82 IN
IC (M
OST
50)
MO
ST50
elec
trica
l (UTP
), I²C
, I²S
, Med
iaLB
−40°
C to
105
°C48
QFN
OS8
1050
INIC
Fully
-enc
apsu
lated
, sin
gle-
chip
with
em
bedd
ed n
etw
ork
man
agem
ent (
MO
ST25
)M
OST
25 F
OT,
I²C,
I²S,
Med
iaLB
Stan
dard
rang
e: −
40 to
85
Exte
nded
rang
e:
−40
to 1
0544
QFP
, ET
QFP
OS8
1060
INIC
ROM
ver
sion
of O
S810
50 IN
IC (M
OST
25)
MO
ST25
FO
T, I²
C, I²
S, M
ediaL
B−4
0°C
to 1
05°C
(ta
rget
ed))
40Q
FN
OS8
1118
AF IN
ICFu
lly-e
ncap
sulat
ed, s
ingle-
chip
, sing
le M
OST
150
netw
ork
port,
em
bedd
ed n
etw
ork
man
agem
ent,
integ
rate
d M
OST
150
coax
ial
trans
ceive
r, su
ppor
ts M
OST
em
bedd
ed E
ther
net c
hann
el, is
ochr
onou
s ch
anne
ls (M
OST
150)
, and
USB
2.0
high
-spe
ed p
ort
MO
ST15
0 FO
T or
MO
ST15
0 co
axial
phy
sical
layer
, USB
2.0
hig
h-sp
eed,
G
PIO
, I²C
, I²S
, SPI
, RM
CK, J
TAG
, Med
iaLB
3-Pi
n, M
ediaL
B bu
s 6-
Pin
−40°
C to
+85
°C72
QFN
OS8
1118
BF IN
ICFu
lly-e
ncap
sulat
ed, s
ingl
e-ch
ip, s
ingl
e M
OST
150
netw
ork
port,
em
bedd
ed n
etw
ork
man
agem
ent,
supp
orts
MO
ST
embe
dded
Eth
erne
t cha
nnel,
isoc
hron
ous
chan
nels
(MO
ST15
0), a
nd U
SB 2
.0 h
igh-
spee
d po
rtM
OST
150
FOT
or e
xter
nal M
OST
150
coax
ial tr
ansc
eiver
, USB
2.0
hig
h-sp
eed,
GPI
O, I
²C, I
²S, S
PI, R
MCK
, JTA
G, M
ediaL
B 3-
Pin,
Med
iaLB
bus
6-Pi
n−4
0°C
to +
85°C
72Q
FN
OS8
1119
AF IN
ICFu
lly-e
ncap
sulat
ed, s
ingle-
chip,
dou
ble M
OST1
50 n
etwo
rk p
orts
, em
bedd
ed n
etwo
rk m
anag
emen
t, int
egra
ted
MOS
T150
coa
xial
trans
ceive
r, sup
ports
MOS
T em
bedd
ed E
ther
net c
hann
el, is
ochr
onou
s cha
nnels
(MOS
T150
), and
USB
2.0
high
-spe
ed p
ort
MO
ST15
0 FO
T or
MO
ST15
0 co
axial
phy
sical
layer
, USB
2.0
hig
h-sp
eed,
G
PIO
, I²C
, I²S
, SPI
, RM
CK, J
TAG
, Med
iaLB
3-Pi
n, M
ediaL
B Bu
s 6-
Pin
−40°
C to
+85
°C88
QFN
OS8
2150
(MO
ST15
0 C
oaxi
al T
rans
ceiv
er)
MOS
T150
Coa
xial T
rans
ceive
r, int
egra
tes c
oaxia
l cab
le dr
iver a
nd c
oaxia
l cab
le re
ceive
r in a
sing
le pa
ckag
eM
OST
150
coax
ial p
hysic
al lay
er, i
nter
face
to M
OST
150
INIC
−40°
C to
+10
5°C
16Q
FN
Auto
mot
ive:
Pow
er M
anag
emen
t Com
pani
on
For D
iagn
ostic
s, S
tatu
s M
onito
ring
and
Pow
er S
uppl
y
Prod
uct
Feat
ures
Inte
rfac
eTe
mpe
ratu
re R
ange
(°C
)Pi
nPa
ckag
es
MPM
8500
0Po
wer
man
agem
ent c
ompa
nion
for d
iagno
stics
, sta
tus
mon
itorin
g an
d po
wer
sup
ply
LIN
2.0,
I²C
−40
to 1
0524
QFN
Auto
mot
ive:
Mul
timed
ia I/
O C
ompa
nion
M
ultim
edia
I/O
Por
t Exp
ande
r
Prod
uct
Feat
ures
Inte
rfac
eTe
mpe
ratu
re R
ange
Pin
Pack
ages
OS8
5650
Low
-cos
t mul
timed
ia I/O
por
t exp
ande
r, DT
CP c
o-pr
oces
sor
Med
iaLB®
bus
3-p
in a
nd 6
-pin
, Hos
t Bus
Inte
rface
(HBI
), 2
× m
ulti-
chan
nel s
tream
ing
ports
, 2 ×
TSI
, 2 ×
SPI
, I²C
−40°
C to
105
°C12
8ET
QFP
OS8
5652
Low
-cos
t mul
timed
ia I/O
por
t exp
ande
rM
ediaL
B bu
s 3-
pin
and
6-pi
n, H
ost B
us In
terfa
ce (H
BI),
2 ×
mul
ti-ch
anne
l stre
amin
g po
rts, 2
× T
SI, 2
× S
PI, I
²C−4
0°C
to 1
05°C
128
ETQ
FPO
S856
56Lo
w-c
ost m
ultim
edia
I/O p
ort e
xpan
der w
ell-s
uite
d fo
r stre
amin
g ap
plica
tions
Med
iaLB
bus
3-pi
n, s
tream
ing p
ort I
²S (F
SYN,
FCL
K, 4
× In
, 4 ×
Out
, @ 5
12 F
s), s
erial
tran
spor
t stre
am in
terfa
ce (T
SI),
I²C−4
0°C
to 1
05°C
48Q
FNO
S856
54Lo
w-co
st m
ultim
edia
I/O p
ort e
xpan
der w
ell-s
uited
for s
tream
ing a
pplic
ation
s, DT
CP c
o-pr
oces
sor
Med
iaLB
bus
3-pi
n, s
tream
ing p
ort I
²S (F
SYN,
FCL
K, 4
× In
, 4 ×
Out
, @ 5
12 F
s), s
erial
tran
spor
t stre
am in
terfa
ce (T
SI),
I²C−4
0°C
to 1
05°C
48Q
FN
Auto
mot
ive:
Eth
erne
t Con
trol
lers
10
/100
Eth
erne
t Con
trol
lers
with
USB
2.0
, HSI
C o
r HBI
Prod
uct
Feat
ures
Inte
rfac
eTe
mpe
ratu
re R
ange
(°C
)Pi
nPa
ckag
es
LAN
8921
8Hi
gh-p
erfo
rman
ce, s
ingl
e-ch
ip c
ontro
ller w
ith H
P Au
to-M
DIX
supp
ort*
MAC
/PHY
, 10B
ase-
T/10
0Bas
e-TX
, 32-
and
16-
bit H
ost B
us In
terfa
ce (H
BI)
−40
to 8
510
0TQ
FPLA
N89
530
Hi-S
peed
USB
2.0
to 1
0/10
0 Et
hern
et c
ontro
ller
USB
2.0
−40
to 8
556
QFN
*HP
Auto
-MDI
X eli
min
ates
the
need
for s
pecia
l cro
ssov
er c
ables
whe
n co
nnec
ting
LAN
devic
es to
geth
er.
Auto
mot
ive:
Eth
erne
t Sw
itch
10/1
00 M
anag
ed E
ther
net S
witc
h w
ith H
P Au
to-M
DIX
Sup
port
Prod
uct
Feat
ures
Inte
rfac
eTe
mpe
ratu
re R
ange
(°C
)Po
rts
Pin
Pack
ages
LAN
8930
3Hi
gh p
erfo
rman
ce, s
mall
-foot
prin
t, fu
ll-fe
atur
ed, s
ingl
e M
II/RM
II/Tu
rbo
MII
supp
ort
MII/
RMII,
2 ×
10/
100
PHYs
, 3 ×
10/
100
MAC
s−4
0 to
85
456
QFN
Auto
mot
ive:
Eth
erne
t Tra
nsce
iver
10/1
00 E
ther
net T
rans
ceiv
er w
ith H
P Au
to-M
DIX
Sup
port
*, Fe
atur
ing
flexP
WR
® T
echn
olog
y
Prod
uct
Feat
ures
Inte
rfac
eTe
mpe
ratu
re R
ange
(°C
)Pi
nPa
ckag
es
LAN
8873
0Sm
all fo
otpr
int,
low
-pow
er c
onsu
mpt
ion,
full f
eatu
red
10Ba
se-T
/100
Base
-TX,
MII/
RMII
LAN8
8730
AM: −
40 to
85
LAN8
8730
BM: −
40 to
105
32Q
FN
*HP
Auto
MDI
X eli
min
ates
the
need
for s
pecia
l cro
ssov
er c
ables
whe
n co
nnec
ting
LAN
devic
es to
geth
er.
www.microchip.com62
Auto
mot
ive:
Hi-S
peed
USB
2.0
Hub
U
SB 2
.0 H
ub F
eatu
ring
Mul
tiTR
AK™
Tec
hnol
ogy
Prod
uct
Feat
ures
Inte
rfac
eTe
mpe
ratu
re R
ange
(°C
)Po
rts
Pin
Pack
ages
USB
8251
2Ve
rsat
ile, c
ost e
ffect
ive, e
nerg
y effi
cient
, inc
orpo
ratin
g M
ultiT
RAK,
Por
tMap
, Por
tSw
ap, P
HYBo
ost t
echn
olog
iesSM
Bus/
I²C−4
0 to
85
236
QFN
USB
8251
3Ve
rsat
ile, c
ost e
ffect
ive, e
nerg
y effi
cient
, inc
orpo
ratin
g M
ultiT
RAK,
Por
tMap
, Por
tSw
ap, P
HYBo
ost t
echn
olog
iesSM
Bus/
I²C−4
0 to
85
336
QFN
USB
8251
4Ve
rsat
ile, c
ost e
ffect
ive, e
nerg
y effi
cient
, inc
orpo
ratin
g M
ultiT
RAK,
Por
tMap
, Por
tSw
ap, P
HYBo
ost t
echn
olog
iesSM
Bus/
I²C−4
0 to
85
436
QFN
Auto
mot
ive:
Hi-S
peed
USB
2.0
Hub
and
Fla
sh M
edia
Car
d C
ontr
olle
rsU
SB 2
.0 H
ub a
nd C
ard
Con
trol
ler C
ombo
s
Prod
uct
Feat
ures
Sock
et
Type
Supp
orts
Tem
pera
ture
R
ange
(°C
)U
SB
Port
sPi
nPa
ckag
es
USB
8264
0US
B Hu
b/Ca
rd R
eade
r com
bo w
ith P
ortM
ap, P
ortS
wap
and
PHY
Boos
t Tec
hnol
ogies
Sing
leSD
™/S
D Hi
gh C
apac
ity™
/Mult
iMed
iaCar
d™/M
emor
y Stic
k®/M
S PR
O™, M
S PR
O-HG
™−4
0 to
85
248
QFN
USB
8264
2US
B br
idge
/car
d re
ader
com
bo w
ith U
SB to
SDI
O a
nd U
SB to
I²C
brid
ging
func
tiona
lity a
nd P
ortM
ap, P
ortS
wap
an
d PH
YBoo
st te
chno
logi
esSi
ngle
SD/S
D Hi
gh C
apac
ity/M
ultiM
ediaC
ard/
Mem
ory
Stick
/MS
PRO
, MS
PRO
-HG
−40
to 8
52
48Q
FN
USX
2730
USB
Card
Rea
der o
nly
Sing
leSD
/SD
High
Cap
acity
/Mul
tiMed
iaCar
d−4
0 to
85
048
QFN
Auto
mot
ive:
Hi-S
peed
USB
2.0
Tra
nsce
iver
U
SB 2
.0 T
rans
ceiv
er w
ith 1
.8V
ULP
I Int
erfa
ce
Prod
uct
Feat
ures
Inte
rfac
eTe
mpe
ratu
re R
ange
(°C
)Po
rts
Pin
Pack
ages
USB
8334
0M
ulti-
frequ
ency
refe
renc
e clo
ck1.
8V to
3.3
V UL
PI−4
0 to
105
132
QFN
Auto
mot
ive:
Hi-S
peed
USB
2.0
Bat
tery
Cha
rger
St
anda
lone
USB
Bat
tery
Cha
rger
Prod
uct
Feat
ures
Tem
pera
ture
Ran
ge (°
C)
Supp
orts
Pin
Pack
ages
UC
S810
01US
B ba
ttery
cha
rger
sup
porti
ng B
C1.2
, Chi
na c
harg
ing,
App
le® a
nd R
IM® c
harg
ing
profi
les a
s w
ell a
s pr
ogra
mm
able
char
ging
pro
files
for u
nfor
esee
n pe
riphe
rals
−40
to 8
5US
B, I² C
, SM
Bus
28Q
FN
UC
S810
02US
B ba
ttery
cha
rger
sup
porti
ng B
C1.2
, Chi
na c
harg
ing,
App
le an
d RI
M c
harg
ing
profi
les a
s w
ell a
s pr
ogra
mm
able
char
ging
pro
files
for u
nfor
esee
n pe
riphe
rals
−40
to 8
5US
B, I² C
, SM
Bus
28Q
FN
Auto
mot
ive:
Hi-S
peed
USB
2.0
Cha
rger
Con
trol
lers
and
Por
t Pro
tect
ion
Prod
uct
Feat
ures
Tem
pera
ture
Ran
ge (°
C)
Supp
orts
Pin
Pack
ages
UC
S810
03US
B po
rt ch
arge
r con
trolle
r sup
porti
ng B
C1.2
, Chi
na c
harg
ing,
App
le® a
nd R
IM® c
harg
ing
profi
les a
s w
ell a
s pr
ogra
mm
able
char
ging
pro
files
for u
nfor
esee
n pe
riphe
rals
and
inte
grat
ed c
urre
nt m
onito
ring
−40
to 8
5US
B, I² C
, SM
Bus
28Q
FN
UC
S211
3Du
al US
B po
rt po
wer
pro
tect
ion
switc
h an
d cu
rrent
mon
itor
−40
to 1
05I² C
, SM
Bus
20Q
FN
Auto
mot
ive:
Wire
less
Aud
io
Rad
io F
requ
ency
Dig
ital A
udio
Tra
nsce
iver
Prod
uct
Feat
ures
Typi
cal S
ink
Mod
e Po
wer
C
onsu
mpt
ion
PA O
utpu
t Pow
erAu
dio
Qua
lifica
tion
KLR8
3012
Wire
lessly
stre
ams
unco
mpr
esse
d lo
ssles
s au
dio
up to
25m
ove
r rob
ust 2
.4 G
Hz ra
dio
link,
mul
ti-po
int t
o m
ulti-
poin
t con
nect
ivity,
st
rong
Wi-F
i® c
oexis
tenc
e, d
ata
chan
nel f
or a
udio
play
back
con
trol,
very
low
pow
er c
onsu
mpt
ion
20 m
W1.
5 dB
m16
bit,
44.
1 ks
/s
ster
eoAE
C Q
100
Auto
mot
ive:
Cap
aciti
ve T
ouch
Sen
sors
Prod
uct
Feat
ures
Inpu
t Cha
nnel
sLE
D D
river
sPr
oxim
ity In
clud
edIn
terf
ace
Pin
Pack
ages
CAP
8118
8Re
set,
wak
e an
d ale
rt, a
utom
atic
reca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
n8
8ü
I² C/S
PI/B
C-Li
nk24
QFN
Focus Product Selector Guide 63
Embe
dded
Con
trol
lers
and
Sup
er I/
O: E
mbe
dded
Con
trol
lers
Prod
uct
Des
crip
tion
Cor
eC
ode
Stor
age
Dat
a R
AMEE
PRO
MC
rypt
o En
gine
GPI
OH
ost I
nter
face
Ope
ratin
g Te
mpe
ratu
re (°
C)
UAR
TM
AF/S
AFPa
ckag
e
MEC
1418
-I/SZ
High
-per
form
ance
32-
bit e
mbe
dded
micr
ocon
trolle
r with
128
KB
of
SRAM
and
32
KB o
f Boo
t RO
M, e
SPI,
LPC,
I² CM
IPS
192
KB S
RAM
(C
ode
+ Da
ta)
PO S
RAM
N/A
No10
6eS
PI, L
PC, I
² C–4
0 to
+85
Full
MAF
144
WFB
GA,
9
x 9
mm
MEC
1428
-SZ-
CHi
gh-p
erfo
rman
ce 3
2-bi
t em
bedd
ed m
icroc
ontro
ller w
ith 2
24 K
B of
SR
AM a
nd 3
2 KB
of B
oot R
OM
, eSP
I, LP
C, I² C
MIP
S19
2 KB
SRA
M
(Cod
e +
Data
)PO
SRA
MN/
AYe
s65
eSPI
, LPC
, I² C
0 to
+70
Full
MAF
/SAF
144
WFB
GA,
9
x 9
mm
MEC
1701
H-C
1-SZ
High
-per
form
ance
32-
bit e
mbe
dded
micr
ocon
trolle
r with
224
KB
of
SRAM
and
32
KB o
f Boo
t RO
M a
nd S
ecur
e Bo
ot, e
SPI,
LPC,
I² CAr
m C
orte
x-M
4F
224
KB32
KB
N/A
Yes
123
eSPI
, LPC
, I² C
0 to
+70
2M
AF14
4 W
FBG
A,
9 x
9 m
m
MEC
1703
H-C
1-SZ
High
-per
form
ance
32-
bit e
mbe
dded
micr
ocon
trolle
r with
224
KB
of
SRAM
and
32
KB o
f Boo
t RO
M a
nd S
ecur
e Bo
ot, e
SPI,
LPC,
I² CAr
m C
orte
x-M
4F
224
KB32
KB
2 KB
Yes
148
eSPI
, LPC
, I² C
0 to
+70
2M
AF14
4 W
FBG
A,
9 x
9 m
m
MEC
1704
Q-C
1-I/S
ZHi
gh-p
erfo
rman
ce 3
2-bi
t em
bedd
ed m
icroc
ontro
ller w
ith 3
16 K
B of
SR
AM a
nd 6
4 KB
of B
oot R
OM
and
Sec
ure
Boot
, eSP
I, LP
C, I² C
Arm
Cor
tex-
M4F
31
6 KB
64 K
BN/
AYe
s12
3eS
PI, L
PC, I
² C–4
0 to
+85
2M
AF14
4 W
FBG
A,
9 x
9 m
m
MEC
1705
Q-C
1-I/S
ZHi
gh-p
erfo
rman
ce 3
2-bi
t em
bedd
ed m
icroc
ontro
ller w
ith 3
16 K
B of
SR
AM a
nd 6
4 KB
of B
oot R
OM
and
Sec
ure
Boot
eSP
I, LP
C, I² C
Arm
Cor
tex-
M4F
31
6 KB
64 K
B2
KBYe
s14
8eS
PI, L
PC, I
² C–4
0 to
+85
2M
AF14
4 W
FBG
A,
9 x
9 m
m
Embe
dded
Con
trol
lers
and
Sup
er I/
O: S
uper
I/O
Des
crip
tion
Ope
ratin
g Te
mpe
ratu
reG
PIO
Secu
rity
Key
R
egis
ter
PEC
I Sup
port
SMBu
s In
terf
ace
Intr
uder
D
etec
tion
Res
ume
Res
etPa
ckag
e
SCH
3221
LPC
IO w
ith m
ultip
le se
rial p
orts
, 804
2 KB
C, re
set g
ener
atio
n an
d HW
M–4
0°C
to +
85°C
33No
NoNo
NoNo
64 W
FBG
ASC
H32
22LP
C IO
with
mul
tiple
seria
l por
ts, 8
042
KBC,
rese
t gen
erat
ion
and
HWM
–40°
C to
+85
°C23
Yes
NoNo
NoYe
s84
WFB
GA
SCH
3223
LPC
IO w
ith m
ultip
le se
rial p
orts
, 804
2 KB
C, re
set g
ener
atio
n an
d HW
M–4
0°C
to +
85°C
19Ye
sNo
NoNo
Yes
64 W
FBG
ASC
H32
24LP
C IO
with
mul
tiple
seria
l por
ts, 8
042
KBC,
rese
t gen
erat
ion
and
HWM
–40°
C to
+85
°C24
Yes
NoNo
NoYe
s10
0 W
FBG
ASC
H32
26LP
C IO
with
mul
tiple
seria
l por
ts, 8
042
KBC,
rese
t gen
erat
ion
and
HWM
–40°
C to
+85
°C40
Yes
NoNo
NoYe
s10
0 W
FBG
ASC
H32
27LP
C IO
with
mul
tiple
seria
l por
ts, 8
042
KBC,
rese
t gen
erat
ion
and
HWM
–40°
C to
+85
°C40
Yes
NoNo
NoYe
s14
4 W
FBG
A
Secu
rity
Prod
ucts
Prod
uct
Cor
eM
ax
Spee
dR
am
(KB)
Ope
ratin
g Te
mpe
ratu
rePa
ckag
eR
NG
Mon
oton
ic
Cou
nter
Cry
pto
Algo
rithm
s O
TP -
Use
r Pr
ogra
mm
able
Mem
ory
Prot
ectio
n U
nit
Deb
ug
Inte
rfac
eFl
oatin
g Po
int U
nit
CEC
1302
Arm
® C
orte
x®-M
4 48
128
0°C
to +
70°C
144-
pin
WFB
GA
Yes
NoAE
S128
, AES
129,
AES
256,
SHA
-1, S
HA-2
56, R
SA-5
12 to
RSA
-204
850
0-bi
tsNo
5-pi
nYe
s
CEC
1702
Arm
Cor
tex-
M4
9648
00°
C to
+70
°C84
-pin
W
FBG
AYe
sYe
sAE
S128
, AES
129,
AES
256,
SHA
-1, S
HA-2
56, S
HA-3
84, S
HA-5
12, R
SA-1
024
to R
SA-4
096,
ECD
SA, E
C-KC
DSA,
Sup
port
for C
urve
255
19, E
d255
1925
00-b
itsYe
s5-
pin
and
SWD
Yes
Secu
rity
Prod
ucts
Product
Typical Sleep Current
Typical Application
Interface (Designator)
Tamper Detection Pin
Memory Density
Temp Range (ºC)
Min Vcc Supply
Unique ID
RNG
Monotonic Counters
Crypto Algorithms
Key Size
Individual Slots
TLS Stack Support
Cloud Support
Pacakges (Designator)
Secure Provisioning Service
ECC
508A
30 n
A Ty
p 2
μA M
ax
Auth
entic
atio
n fo
r IP
conn
ecte
d no
de a
nd
acce
ssor
y au
then
ticat
ion
I² C (D
A)
Sing
le w
ire (C
Z)1
4.5
Kb–4
0 to
+8
52.
0V72
-bit
seria
l nu
mbe
rFI
PS2
FIPS
186-
3 EC
DSA,
NIS
T P2
56, N
IST
SHA2
56 w
ith H
MAC
opt
ion,
ECD
H25
6-bi
t key
s16
Cyclo
neSS
L,
Wol
fSSL
, Ope
nSSL
, W
INC
TLS
AWS,
Az
ure
SOIC
(MAH
), UD
FN (S
SH),
3
cont
acts
(RBH
)Ye
s
ECC
108A
30 n
A Ty
p 2
μA M
axAc
cess
ory
auth
entic
atio
nI² C
(DA)
Si
ngle
wire
(CZ)
14.
5 Kb
–40
to
+85
2.0V
72-b
it se
rial
num
ber
FIPS
2FI
PS18
6-3
ECDS
A, N
IST
P256
, NIS
T B2
83, N
IST
K283
, NIS
T SH
A256
with
HM
AC o
ptio
n
256-
bits
and
28
3-bi
ts k
eys
16N/
AN/
ASO
IC (M
AH),
UDFN
(SSH
),
3 co
ntac
ts (R
BH)
Yes
SHA2
04A
30 n
A Ty
p 2
μA M
axDi
spos
able/
acce
ssor
y au
then
ticat
ion
I² C (D
A)
Sing
le w
ire (C
Z)4.
5 Kb
–40
to
+85
2.0V
72-b
it se
rial
num
ber
FIPS
2NI
ST S
HA25
6 w
ith H
MAC
Opt
ion
256-
bit k
eys
16N/
AN/
ASO
IC (M
AH),
UDFN
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) 3
cont
acts
, (RB
H), S
OT-
23 (S
TU),
TSSO
P (X
HD) X
DFN
(MXH
)Ye
s
AES1
32
100
μA
@3.
3V V
cc
250
μA
@5.
5V V
cc
Secu
re s
tora
geSP
I (Q
) I² C
(R )
16x
2
Kb–4
0 to
+8
52.
0V64
-bit
seria
l nu
mbe
rFI
PS16
AES-
CCM
for a
uthe
ntica
tion,
M
AC C
apab
ility
Up to
16x
12
8-bi
t key
sN/
AN/
ASO
IC (8
S1),
UDFN
(8M
A2)
No
www.microchip.com64
Touc
h an
d 3D
Ges
ture
Con
trol
: C
apac
itive
Tou
ch C
ontr
olle
rs
Prod
uct
Butto
nsLE
D
Driv
ers
Addi
tiona
l Fea
ture
sPr
oxim
ityIn
terf
ace
Safe
ty c
ertifi
ed T
ouch
VD
E/U
L 60
730
clas
s B
Volta
ge (V
)Pi
nsPa
ckag
es
AT42
QT1
010
1–
adju
stab
le se
nsitiv
ity, n
oise
filte
ring
üG
PIO
1.8–
5.5
6/8
SOT-
23, U
DFN
AT42
QT1
011
1–
adju
stab
le se
nsitiv
ity, n
oise
filte
ring
üG
PIO
1.8–
5.5
6/8
SOT-
23, U
DFN
AT42
QT1
012
1–
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
eü
GPI
O1.
8–5.
56/
8SO
T-23
, UDF
NAT
42Q
T104
04
–ad
just
able
sens
itivity
, noi
se re
jectio
n filt
ers,
low
-pow
er m
ode,
Adj
acen
t key
sup
pres
sion
(AKS
)G
PIO
1.8–
5.5
20VQ
FNAT
42Q
T105
05
–ad
just
able
sens
itivity
, noi
se re
jectio
n filt
ers,
low
-pow
er m
ode,
Adj
acen
t key
sup
pres
sion
(AKS
)I² C
/GPI
O1.
8–5.
512
/20
VQFN
, WLC
SPAT
42Q
T106
06
–ad
just
able
sens
itivity
, noi
se re
jectio
n filt
ers,
low
-pow
er m
ode,
Adj
acen
t key
sup
pres
sion
(AKS
)I² C
/GPI
O1.
8–5.
528
VQFN
AT42
QT1
070
7–
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
I² C/G
PIO
1.8–
5.5
14/2
0SO
IC, V
QFN
AT42
QT2
100
10–
slide
r/whe
el, a
djus
tabl
e se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
SPI/G
PIO
2.0–
5.5
32VQ
FNAT
42Q
T111
011
–ad
just
able
sens
itivity
, noi
se re
jectio
n filt
ers,
low
-pow
er m
ode,
Adj
acen
t key
sup
pres
sion
(AKS
)SP
I/GPI
O3.
0–5.
532
TQFP
, VQ
FNAT
42Q
T212
012
–sli
der/w
heel,
adj
usta
ble
sens
itivity
, noi
se re
jectio
n filt
ers,
low
-pow
er m
ode,
Adj
acen
t key
sup
pres
sion
(AKS
)ü
I² C1.
8–5.
520
SOIC
, TSS
OP,
VQ
FNAT
42Q
T216
016
–sli
der/w
heel,
adj
usta
ble
sens
itivity
, noi
se re
jectio
n filt
ers,
low
-pow
er m
ode,
Adj
acen
t key
sup
pres
sion
(AKS
)I² C
1.8–
5.5
28VQ
FNAT
42Q
T124
424
–IE
C/EN
/UL6
0730
Clas
s B
safe
ty, F
MEA
, adj
usta
ble
sens
itivity
, noi
se re
jectio
n filt
ers,
Adj
acen
t key
sup
pres
sion
(AKS
)I² C
ü3.
0–5.
532
TQFP
, VQ
FNAT
42Q
T124
524
–IE
C/EN
/UL6
0730
Clas
s B
safe
ty, F
MEA
, adj
usta
ble
sens
itivity
, noi
se re
jectio
n filt
ers,
Adj
acen
t key
sup
pres
sion
(AKS
)SP
Iü
3.0–
5.5
32TQ
FP, V
QFN
AT42
QT1
481
48–
IEC/
EN/U
L607
30 C
lass
B sa
fety,
FM
EA, a
djus
tabl
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nsitiv
ity, n
oise
rejec
tion
filter
sSP
I/UAR
Tü
4.8–
5.3
44TQ
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42Q
T264
064
–IE
C/EN
/UL6
0730
Clas
s B
safe
ty, F
MEA
, adj
usta
ble
sens
itivity
, noi
se re
jectio
n filt
ers
SPI
ü4.
8–5.
344
TQFP
CAP
1133
33
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I² C3.
0–3.
610
QFN
CAP
1106
6–
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I² C3.
0–3.
610
QFN
CAP
1126
62
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I² C/S
PI3.
0–3.
616
QFN
CAP
1166
66
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I² C/S
PI3.
0–3.
620
QFN
CAP
1128
82
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I² C/S
PI3.
0–3.
620
QFN
CAP
1188
88
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I² C/S
PI3.
0–3.
624
QFN
CAP
1114
1411
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I² C3.
0–3.
632
QFN
CAP
1203
3–
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nI² C
3.3–
5.0
8Q
FNC
AP12
933
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rt, a
utom
atic
calib
ratio
n, b
ase
capa
citan
ce c
ompe
nsat
ion
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QFN
CAP
1206
6–
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nI² C
QFN
CAP
1296
6–
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I² CQ
FNC
AP12
088
–ale
rt, a
utom
atic
calib
ratio
n, b
ase
capa
citan
ce c
ompe
nsat
ion
I² CQ
FNC
AP12
988
–ale
rt, a
utom
atic
calib
ratio
n, b
ase
capa
citan
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ompe
nsat
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üI² C
3.3–
5.0
16Q
FNC
AP12
1414
11sli
der,
rese
t, ale
rt, a
utom
atic
calib
ratio
n, b
ase
capa
citan
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ompe
nsat
ion,
aud
io o
utpu
tü
I² C3.
0–3.
632
QFN
MTC
H10
22
–op
timize
d fo
r but
ton
repl
acem
ent,
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, a
ctive
gua
rd, l
ow-p
ower
mod
eü
GPI
O2.
1–3.
68
MSO
P, U
DFN
MTC
H10
55
–op
timize
d fo
r but
ton
repl
acem
ent,
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, a
ctive
gua
rd, l
ow-p
ower
mod
eü
GPI
O2.
1–3.
614
/16
TSSO
P, Q
FNM
TCH
108
8–
optim
ized
for b
utto
n re
plac
emen
t, ad
just
able
sens
itivity
, noi
se re
jectio
n filt
ers,
act
ive g
uard
, low
-pow
er m
ode
üG
PIO
2.1–
3.6
20SS
OP,
UQ
FN
Touc
h an
d 3D
Ges
ture
Con
trol
: Pro
ject
ed C
apac
itive
Mul
ti-to
uch
Touc
hpad
and
Tou
chsc
reen
Con
trol
lers
(Tur
nkey
Sol
utio
ns)
Prod
uct
Cha
nnel
sSu
rfac
e G
estu
res
Addi
tiona
l Fea
ture
sAu
tom
otiv
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Ran
ge (º
C)
Low
Pow
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terf
ace
Volta
ge
Pin
Pack
age
ATM
XT14
4U14
4Si
ngle
and
dual
finge
rSe
lf an
d m
utua
l cap
acita
nce,
glo
ve a
nd th
ick le
ns, m
oist
ure
supp
ort
––4
0 to
+85
YI² C
1.8–
3.3V
38Q
FNAT
MXT
225T
224
Sing
le an
d du
al fin
ger
Self
and
mut
ual c
apac
itanc
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love
and
thick
lens
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stur
e su
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to +
105
YI² C
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3.1–
3.3V
100
TQFP
ATM
XT33
6U33
6Si
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and
dual
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lf an
d m
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l cap
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glo
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ns, m
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supp
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0 to
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448
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Self
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mut
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thick
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ppor
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–40
to +
105
YI² C
, SPI
3.1–
3.3V
100
TQFP
ATM
XT64
0U64
0Si
ngle
and
dual
finge
rSe
lf an
d m
utua
l cap
acita
nce,
glo
ve a
nd th
ick le
ns, m
oist
ure
supp
ort
––4
0 to
+85
YI² C
1.8–
3.3V
88UF
BGA
ATM
XT64
1T64
0Si
ngle
and
dual
finge
rSe
lf an
d m
utua
l cap
acita
nce,
glo
ve a
nd th
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ns, m
oist
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supp
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0 to
+10
5Y
I² C, S
PI3.
1–3.
3V10
0TQ
FPAT
MXT
799T
798
Sing
le an
d du
al fin
ger
Self
and
mut
ual c
apac
itanc
e, g
love
and
thick
lens
, moi
stur
e su
ppor
tY
–40
to +
105
YI² C
, SPI
3.1–
3.3V
144
LQFP
MXT
1066
T210
66Si
ngle
and
dual
finge
rSe
lf an
d m
utua
l cap
acita
nce,
glo
ve a
nd th
ick le
ns, m
oist
ure
supp
ort
––4
0 to
+85
Y1.
8–3.
3V11
4UF
BGA
MXT
1189
T11
88Si
ngle
and
dual
finge
rSe
lf an
d m
utua
l cap
acita
nce,
glo
ve a
nd th
ick le
ns, m
oist
ure
supp
ort
Y–4
0 to
+10
5Y
I² C, S
PI3.
1–3.
3V14
4LQ
FPM
XT16
64T3
1664
Sing
le an
d du
al fin
ger
Self
and
mut
ual c
apac
itanc
e, g
love
and
thick
lens
, moi
stur
e su
ppor
t–
–40
to +
85Y
I² C, U
SB1.
8–3.
3V13
6UF
BGA
MXT
1665
T16
64Si
ngle
and
dual
finge
rSe
lf an
d m
utua
l cap
acita
nce,
glo
ve a
nd th
ick le
ns, m
oist
ure
supp
ort
Y–4
0 to
+10
5Y
I² C, S
PI3.
1–3.
3V14
4LQ
FPM
XT29
52T2
2912
Sing
le an
d du
al fin
ger
Self
and
mut
ual c
apac
itanc
e, g
love
and
thick
lens
, moi
stur
e su
ppor
t–
–40
to +
85Y
I² C, U
SB1.
8–3.
3V16
2UF
BGA
Focus Product Selector Guide 65
Touc
h an
d 3D
Ges
ture
Con
trol
: 3D
Ges
ture
Con
trol
lers
Prod
uct
Cha
nnel
sPo
sitio
n Tr
acki
ngAd
ditio
nal F
eatu
res
Auto
mot
ive
Tem
pera
ture
Ran
geLo
w P
ower
Inte
rfac
eVo
ltage
Pi
nPa
ckag
e
MG
C30
305
–G
estu
re p
ort,
auto
wak
e/sle
ep, t
ouch
det
ectio
n–
–20˚
C to
+85
˚CY
I² C, E
DI (g
estu
re p
ort)
3.3V
28SS
OP
MG
C31
305
YG
estu
re p
ort,
auto
wak
e/sle
ep, t
ouch
det
ectio
n–
–20˚
C to
+85
˚CY
I² C, E
DI (g
estu
re p
ort)
3.3V
28Q
FNM
GC
3140
5Y
Ges
ture
por
t, au
to w
ake/
sleep
, tou
ch d
etec
tion
Y–4
0˚C
to +
125˚
CY
I² C, E
DI (g
estu
re p
ort)
3.3V
48UQ
FN
Pow
er D
iscr
etes
: Sili
con
Car
bide
(SiC
) MO
SFET
s
Part
Num
ber
Volta
geR
DS(
on)
Pack
age
MSC
xxxS
MA0
70B
700V
15–9
0 m
ΩTO
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MSC
xxxS
MA0
70S
700V
15–9
0 m
ΩD3
PAK
MSC
xxxS
MA1
20B
1200
V25
–280
mΩ
TO-2
47
MSC
xxxS
MA1
20S
1200
V25
–360
mΩ
D3PA
K
MSC
xxxS
MA1
20J
1200
V25
–80
mΩ
SOT-
227
MSC
xxxS
MA1
70B
1700
V45
–750
mΩ
TO-2
47
MSC
xxxS
MA1
70S
1700
V45
–750
mΩ
D3PA
K
Pow
er D
iscr
etes
: Sili
con
Car
bide
(SiC
) Dio
des
Part
Num
ber
Volta
geR
DS(
on)
Pack
age
MSC
xxxS
DA0
70K
700V
10-3
0ATO
-220
MSC
xxxS
DA0
70B
700V
10-5
0 A
TO-2
47
MSC
xxxS
DA0
70S
700V
30-5
0AD3
PAK
MSC
xxxS
DA1
20K
1200
V10
-30A
TO-2
20
MSC
xxxS
DA1
20B
1200
V10
-50A
TO-2
47
MSC
xxxS
DA1
20S
1200
V10
-30A
D3PA
K
MSC
xxxS
DA1
70B
1700
V10
-50
ATO
-247
Pow
er D
iscr
etes
: Ins
ulat
ed G
ate
Bipo
lar T
rans
isto
rs (I
GBT
s)
Stan
dard
Ser
ies
Volta
ge R
ange
(V)
Tech
nolo
gyEa
sy to
Par
alle
lSh
ort C
ircui
t Saf
e O
pera
ting
Ran
ge (S
OA)
Para
met
er
MO
S 7™
1200
Punc
h-Th
roug
h-
-Ul
tra-lo
w g
ate
char
ge
MO
S 8™
600,
650
, 900
, 120
0Pu
nch-
Thro
ugh,
Non
-Pun
ch-T
hrou
gh-
-Hi
ghes
t effic
iency
Fiel
d St
op T
renc
h G
ate
600,
120
0Fi
eld S
top
Yes
Yes
Low
est c
ondu
ctio
n lo
ss
Pow
er D
iscr
etes
: Pow
er M
OS
8™ M
OSF
ETs/
FRED
FETs
MO
SFET
Par
t Num
ber
FRED
FET
Part
Num
ber
BVD
SS (V
)R
ds(o
n)M
ax (Ω
)Id
(A)
Id (A
)Pa
ckag
e St
yle
APTx
xM12
0xx
APTx
xF12
0xx
1200
2.4–
0.29
8–35
7-33
TO-2
47, D
3PAK
, T-M
AX®, T
O-2
64, I
SOTO
P
APTx
xM10
0xx
APTx
xF10
0xx
1000
2.0–
0.18
8–45
7-42
TO-2
47, D
3PAK
, T-M
AX, T
O-2
64, I
SOTO
P
APTx
xM80
xxAP
TxxF
80xx
800
0.9–
0.10
13–6
012
-57
TO-2
47, D
3PAK
, T-M
AX, T
O-2
64, I
SOTO
P
APTx
xM60
xxAP
TxxF
80xx
600
0.37
–0.0
5536
–84
19-8
4TO
-247
, D3P
AK, T
-MAX
, TO
-264
, ISO
TOP
APTx
xM50
xxAP
TxxF
50xx
500
0.24
–0.0
3656
–103
24-1
03TO
-247
, D3P
AK, T
-MAX
, TO
-264
, ISO
TOP
www.microchip.com66
Pow
er D
iscr
etes
: Low
-Vol
tage
Pow
er M
OS
V® M
OSF
ETs/
FRED
FETs
MO
SFET
Par
t Num
ber
FRED
FET
Part
Num
ber
BVD
SS (V
)R
ds(o
n)M
ax (Ω
)Id
(A)
Id (A
)Pa
ckag
e St
yle
APT3
0Mxx
xxRx
APT3
0Mxx
xxFR
x30
00.
085–
0.01
940
–130
48–1
30TO
-247
, D3P
AK, I
SOTO
PAP
T20M
xxxx
RxAP
T20M
xxxx
FRx
200
0.04
5–0.
011
56–1
7556
–175
TO-2
47, D
3PAK
, T-M
AX®, T
O-2
64, I
SOTO
P
Pow
er D
iscr
etes
: Ultr
a-Fa
st, M
OS7
® M
OSF
ETs
MO
SFET
Par
t Num
ber
BVD
SS (V
)R
ds(o
n)M
ax (Ω
)Id
(A)
FRED
FET
Part
Num
ber
Pack
age
Styl
e
APT1
20xx
xxLL
x12
004.
700-
0.57
03.
5–22
APT1
20xx
xFLL
xTO
-247
, D3P
AK, T
-MAX
®
APT1
00xx
xxLL
x10
000.
900-
0.21
012
–37
APT1
00xx
xFLL
xTO
-247
, D3P
AK, T
-MAX
, TO
-264
, ISO
TOP
APT8
0xxx
xLLx
800
0.20
0-0.
140
33–5
2AP
T80x
xxFL
LxTO
-247
, D3P
AK, T
-MAX
, TO
-264
, ISO
TOP
APT5
0xxx
xLLx
500
0.14
0-0.
038
35–8
8AP
T50x
xxFL
LxTO
-247
, D3P
AK, T
-MAX
, TO
-264
, ISO
TOP
Pow
er D
iscr
etes
: Ultr
a-fa
st, M
OS
7R M
OSF
ET
MO
SFET
Par
t Num
ber
BVD
SS (V
)R
ds(o
n)M
ax (Ω
)Id
(A)
Pack
age
Styl
e
APT3
6N90
BC3G
900
0.12
36TO
-247
APTx
xN80
xxC3
G80
00.
450–
0.14
511
–34
TO-2
47, T
-MAX
®, T
O-2
64
APTx
xN65
xxCx
x65
00.
070–
0.03
547
–94
TO-2
47, D
3PAK
, T-M
AX, T
O-2
64
APTx
xN60
xxCx
x60
00.
125–
0.03
530
–106
TO-2
47, D
3PAK
, T-M
AX, T
O-2
64, I
SOTO
P
Pow
er D
iscr
etes
: Lin
ear M
OSF
ETs
Part
Num
ber
BVD
SS (V
)R
ds(o
n)M
ax (Ω
)Id
(A)
SOA
(W)
APL6
02xx
x60
00.
125
43–4
932
5
APL5
02xx
x50
00.
9052
–58
325
Pow
er D
iscr
etes
: Sili
con
and
Silic
on C
arbi
de D
iode
s
Serie
sVo
ltage
Rat
ings
Feat
ures
Appl
icat
ions
Com
men
t
D20
0, 3
00, 4
00, 6
00, 1
000,
120
0M
ediu
m V
f, M
ediu
m s
peed
Free
whe
eling
dio
de, O
utpu
t rec
tifier
, DC–
DC c
onve
rter
Prop
rieta
ry p
latin
um p
roce
ssD
Q60
0, 1
000,
120
0Hi
gh s
peed
, Ava
lanch
e ra
ted
PFC,
Fre
ewhe
eling
dio
de, D
C–DC
con
verte
rSt
eppe
d EP
I impr
oves
sof
tnes
s Pr
oprie
tary
plat
inum
pro
cess
Scho
ttky
200
Low
Vf,
Avala
nche
rate
dO
utpu
t rec
tifier
, Fre
ewhe
eling
dio
de, D
C–DC
con
verte
rAP
L602
xxx
SiC
Sch
ottk
y70
0, 1
200,
170
0Ze
ro re
vers
e re
cove
ryPF
C, F
reew
heeli
ng d
iode
, DC–
DC c
onve
rter
Low
sw
itchi
ng lo
sses
, hig
h po
wer
den
sity
and
high
-tem
pera
ture
ope
ratio
n
Pow
er D
iscr
etes
: Hig
h-Vo
ltage
RF
MO
SFET
s
Part
Num
ber
Pout
(W)
Freq
.(MH
z)Pa
ckag
e St
yle
Cla
ss o
f Ope
ratio
nC
omm
ents
ARFx
xxxx
xx90
–750
25–1
20TO
-247
, M17
4, T
O-2
64, T
3A, T
3, T
3C, T
1, T
2A–
ETh
e AR
F fa
mily
of R
F po
wer
MO
SFET
s is
optim
ized
for a
ppli-
catio
ns re
quirin
g fre
quen
cies
as h
igh
as 1
50 M
Hz a
nd o
pera
t-ing
vol
tage
s as
hig
h as
400
V
VRFx
xxxx
xx30
–600
30–1
75M
113,
M17
4, M
177,
M20
8, T
2–
The
VRF
fam
ily o
f RF
MO
SFET
s in
clude
s im
prov
ed re
plac
emen
ts fo
r ind
ustry
-sta
ndar
d RF
tran
sisto
rs. T
hey
prov
ide
impr
oved
rugg
edne
ss b
y in
crea
sing
the
Bvds
s ov
er 3
0 pe
rcen
t fro
m th
e in
dust
ry-s
tan-
dard
125
V to
170
V m
inim
um
DR
Fxxx
xxxx
400–
2000
30T2
B, T
4, T
4A, T
5D-
ETh
e DR
F fa
mily
of R
F so
lutio
ns in
tegr
ate
drive
rs, b
ypas
s ca
pacit
ors
and
RF M
OSF
ETs
into
a s
ingl
e pa
ckag
e
Focus Product Selector Guide 67
Pow
er M
odul
es: S
tand
ard
Con
figur
atio
ns
Elec
tric
al T
opol
gyIG
BT
600V
to 1
700V
MO
SFET
75
V to
120
0VD
IOD
E 20
0V to
170
0VM
ix S
i–Si
C
600V
to 1
200V
SiC
DIO
DE
600V
to 1
200V
SiC
MO
SFET
60
0V to
170
0VPa
ckag
es
Asym
met
rical
Brid
ge50
A to
300
A64
A to
207
A–
––
–SP
1, S
P3F,
SP4,
SP6
Boos
t buc
k10
0A70
A–
––
–SP
3F
Boos
t and
Buc
k C
hopp
er30
A to
600
A17
A to
370
A–
15A
to 1
07A
–50
A an
d 10
0ASO
T–22
7, S
P1, S
P3F,
SP4,
SP
6, D
3C
omm
on A
node
––
400A
––
–SP
6C
omm
on C
atho
de–
–40
0A–
100A
to 6
00A
–D1
P, S
P6D
ual b
oost
and
Buc
k C
hopp
er50
A to
90A
17A
to 1
00A
–40
A–
–SP
1, S
P3F
Dua
l Com
mon
Sou
rce
50A
to 6
00A
45A
to 3
70A
––
––
SP4,
SP6
Dua
l Dio
de–
––
–20
A to
100
A–
SOT–
227
Full
Brid
ge20
A to
300
A6A
to 2
07A
30A
to 2
00A
–20
A to
200
A11
0ASO
T–22
7, S
P1, S
P2, S
P3F,
SP4,
SP6
Full
Brid
ge W
ith P
FC38
A29
A an
d 38
A–
38A
––
SP3F
Full
Brid
ge W
ith F
ast
Rec
tifier
Dio
de B
ridge
38A
and
50A
29A
and
38A
–38
A–
–SP
3F
Full
brid
ge W
ith S
erie
s an
d Pa
ralle
l Dio
des
–13
A to
62A
–11
A to
38A
––
SP4
Inte
rleav
ed P
FC–
38A
and
70A
––
––
SP1,
SP3
FLi
near
Sin
gle
and
Dua
l Sw
itch
–14
A an
d 33
A–
––
–SP
1, S
P3F
Phas
e Le
g30
A to
600
A25
A to
370
A40
0A–
100A
to 6
00A
40A
to 5
86A
SP1,
SP2
, SP3
F, SP
4, S
P6,
SP6L
I, D1
P, D
3Ph
ase
Leg
With
Gat
e D
river
300A
to 4
00A
––
––
–LP
8Ph
ase
Leg
With
PFC
–27
A an
d 38
A–
––
–SP
3FPh
ase
Leg
With
Ser
ies
and
Para
llel D
iode
s–
26A
to 2
25A
–21
A to
110
A–
–SP
4, S
P6
Sing
le s
witc
h40
0A to
750
A97
A to
640
A40
0A to
500
A–
––
SP6,
D4,
LP4
Sing
le S
witc
h W
ith S
erie
s an
d Pa
ralle
l Dio
des
–86
A to
310
A–
86A
and
110A
––
SP6
Sing
le S
witc
h W
ith S
erie
s D
iode
s47
5A11
0A to
160
A–
––
–SP
6
3–Le
vel N
PC In
vert
er20
A to
300
A30
A to
75A
––
–20
A to
160
ASP
1, S
P3F,
SP6
3–Le
vel T
–Typ
e In
vert
er40
A to
200
A–
––
–20
A an
d 50
ASP
3F, S
P63–
Phas
e Br
idge
30A
to 7
5A–
–40
A an
d 90
A50
A–
SP1,
SP3
FTr
iple
Dua
l Com
mon
Sou
rce
50A
to 1
50A
21A
and
54A
––
––
SP6–
PTr
iple
Pha
se L
eg30
A to
150
A17
A to
100
A–
50A
and
87A
–55
A to
150
ASP
3F, S
P6–P
www.microchip.com68
Hi R
el D
iscr
ete
Solu
tions
(HR
DS)
Pro
duct
Por
tfolio
Prod
uct
Fam
ilyTy
pePo
larit
yR
ated
Vol
tage
Rat
ed C
urre
ntR
ated
Pow
erM
ax T
j (o C
)Pa
ckag
eQ
ual L
evel
CH
IP
Avai
labi
lity
RAD
HAR
D
Avai
labi
lity
Bipolar Transistor
Pow
er T
rans
istor
NPN/
PNP
40V
to 7
60V
0.2A
to 5
0A0.
75W
to 3
00W
150
to 2
00M
etal/
Cera
mic
- TO
's a
nd L
CC's
MIL
-PRF
-195
00 u
p to
JAN
Son
Sele
cton
Sele
ctDa
rlingt
on T
rans
istor
NPN/
PNP
40V
to 4
50V
5A to
20A
1W to
175
W17
5 to
200
Met
al - T
O's
MIL
-PRF
-195
00 u
p to
JAN
TXV
on S
elect
on S
elect
Small
Sig
nal T
rans
istor
NPN/
PNP,
Sin
gles
, Du
als a
nd Q
uads
10V
to 4
50V
0.01
A to
3A
0.15
W to
5W
175
to 2
00M
etal/
Cera
mic
- TO
's, L
CC's
FP
and
DIP'
sM
IL-P
RF-1
9500
up
to J
ANS
on S
elect
on S
elect
Small
Sig
nal R
F Tr
ansis
tor
NPN/
PNP
12V
to 3
0V0.
03 to
0.0
4A0.
2W to
1W
200
Met
al/Ce
ram
ic - T
O's
and
LCC
'sM
IL-P
RF-1
9500
up
to J
ANS
on S
elect
on S
elect
Field Effect Transistor
JFET
P, N
and
Mat
ched
30V
to 5
0V0.
0015
A to
0.1
75A
0.3W
to 0
.5W
175
to 2
00M
etal/
Cera
mic
- TO
's a
nd L
CC's
To b
e Q
ualifi
edon
Sele
cton
Sele
ct
MO
SFET
'sN
Chan
nel
100V
to 2
50V
12.4
A to
56A
75W
to 2
50W
150
Met
al/Ce
ram
ic - T
O's
and
LCC
'sTo
be
Qua
lified
on S
elect
Yes
Diode
Small
Sig
nal D
iode
sPN
, Sin
gles
and
Dua
ls50
V to
225
V0.
075A
to 0
.3A
175
to 2
00G
lass
- DO
's a
nd M
etal/
Cera
mic
- LCC
'sM
IL-P
RF-1
9500
up
to J
ANS
on S
elect
Not A
pplic
able
Rect
ifier
PN, S
ingl
es,D
uals,
St
acke
d, B
ridge
50V
to 1
600V
0.12
A to
300
A15
0 to
200
Glas
s/M
etal
- DO
's a
nd M
etal/
Cera
mic
- LCC
'sM
IL-P
RF-1
9500
up
to J
ANS
on S
elect
Not A
pplic
able
High
Vol
tage
Rec
tifier
PN S
ingl
e an
d St
acke
d10
00V
to
3000
V0.
1A17
5G
lass
- DO
'sM
IL-P
RF-1
9500
up
to J
ANTX
Not A
pplic
able
Not A
pplic
able
Pow
er S
chot
tky
N an
d N
Dual
15V
to 1
50V
3A to
150
A12
5 to
150
Met
al/Ce
ram
ic - T
O's
, LCC
's, T
hinK
eyM
IL-P
RF-1
9500
up
to J
ANS
on S
elect
Not A
pplic
able
Small
Sig
nal S
chot
tky
- He
rmet
icN
and
N Du
al20
V to
100
V0.
033A
to 1
A12
5 to
150
Glas
s - D
O's
and
Met
al/Ce
ram
ic - L
CC's
MIL
-PRF
-195
00 u
p to
JAN
Son
Sele
ctNo
t App
licab
le
Small
Sig
nal S
chot
tky
- No
n He
rmet
icN
and
N Du
al20
V to
100
V0.
033A
to 1
A12
5 to
150
Plas
tic -
DO's
, Pow
erM
iteUp
to M
X lev
elon
Sele
ctNo
t App
licab
le
Regulators/TVS
TVS
- Her
met
icUn
ipol
ar a
nd B
ipol
ar5V
to 1
85V
1.7A
to 4
40A
500W
to 5
000W
175
Glas
s/M
etal
- DO
's a
nd C
eram
ic - T
hinK
eyM
IL-P
RF-1
9500
up
to J
ANS
on S
elect
Not A
pplic
able
TVS
- Non
Her
met
icUn
ipol
ar a
nd B
ipol
ar5V
to 1
85V
1.7A
to 4
40A
500W
to 5
000W
175
Plas
tic -
DO's
, Pow
erM
ite a
nd P
LAD
Up to
MX
level
on S
elect
Not A
pplic
able
Volta
ge R
egul
ator
(Zen
er)
PN1.
8V to
390
V0.
0004
6A to
12.
4A
0.5W
to 5
0W17
5G
lass/
Met
al - D
O's
and
Met
al - T
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MIL
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-195
00 u
p to
JAN
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ctNo
t App
licab
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mpe
ratu
re
Com
pens
ated
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ers
PN/N
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2V to
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6V0.
0005
A to
0.0
1Ato
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175
Glas
s - D
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MIL
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-195
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JAN
Son
Sele
cton
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ct
Curre
nt R
egul
ator
sJF
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V to
100
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0002
A to
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5W17
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lass
- DO
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IL-P
RF-1
9500
up
to J
ANS
on S
elect
Not A
pplic
able
Modules
Arra
ys a
nd B
ridge
sPN
and
Arra
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100
0V0.
3A to
25A
0.5W
and
up
150
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MIL
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leNo
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Mot
or a
nd A
ctua
tor D
rives
Part
Num
ber
Prod
uct
Des
crip
tion
Pow
er
ratin
g (k
VA)
Nom
inal
Hig
h Vo
ltage
Inpu
t (V
)
Nom
inal
Low
Vo
ltage
Inpu
t (V
)
Nom
. O
utpu
t C
urre
nt (A
)
Max
. Out
put
Cur
rent
(A)
Pow
er
Arch
itect
ure
Sem
icon
duct
or
Tech
nolo
gyO
pera
ting
Tem
p.
Ran
ge (°
C)
Dim
ensi
ons
(mm
)Pa
ckag
e
MAI
CM
MC
40X1
20A
PCM
510
Pow
er C
ore
Mod
ule
(PCM
) with
telem
etry
m
onito
ring,
con
trol,
com
mun
icatio
ns, p
ower
br
idge
and
fully
inte
grat
ed g
ate
drive
554
015
12.5
253-
phas
e br
idge
SiC
MO
SFET
or
Si IG
BT–5
5 to
+11
010
5 x
85 x
30
Righ
t-ang
le co
nnec
tor
MAI
CM
MC
40X1
20B
PCM
510
Pow
er C
ore
Mod
ule
(PCM
) with
telem
etry
m
onito
ring,
con
trol,
com
mun
icatio
ns, p
ower
br
idge
and
fully
inte
grat
ed g
ate
drive
554
015
12.5
253-
phas
e br
idge
SiC
MO
SFET
or
Si IG
BT–5
5 to
+11
010
5 x
85 x
30
Stra
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co
nnec
tor
MAI
PDM
C40
X120
AHP
D510
Hybr
id P
ower
Driv
e (H
PD) w
ith p
ower
brid
ge
and
fully
inte
grat
ed g
ate
drive
554
015
12.5
253-
phas
e br
idge
SiC
MO
SFET
or
Si IG
BT–5
5 to
+11
0 1
05 x
85
x 25
Scre
w
term
inals
MAI
PDM
C40
X120
CHP
D520
Hybr
id P
ower
Driv
e (H
PD) w
ith p
ower
brid
ge
and
fully
inte
grat
ed g
ate
drive
554
015
12.5
253-
phas
e br
idge
SiC
MO
SFET
or
Si IG
BT–5
5 to
+11
092
x 8
2 x
19So
lder
ed p
ins
Rad
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n H
arde
ned
Pow
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uppl
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Part
Num
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Prod
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Des
crip
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Pow
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ting
(W)
Nom
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Vol
tage
In
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cien
cyN
om. O
utpu
t C
urre
nt (A
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adia
tion
Pow
er
Arch
itect
ure
Feat
ures
Ope
ratin
g Te
mp.
Ran
ge
(°C)
Dim
ensi
ons
(mm
)W
eigh
t
SA50
-120
-5S
SA S
eries
DC
- DC
Con
verte
rsSp
ace
grad
e no
n-hy
brid
DC-
DC C
onve
rter S
ingl
e O
utpu
t50
120
Sing
le 3.
3V
to 2
8V85
%2A
to10
A10
0kRa
dFo
rwar
d Co
nver
ter
Enab
le; S
ync;
Ad
just
; Par
allel
–55
to +
105
2 x
3 x
0.5
110
gm
SA50
-120
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15T
SA S
eries
DC
- DC
Con
verte
rsSp
ace
grad
e no
n-hy
brid
DC-
DC C
onve
rter T
riple
Out
put
5012
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iple
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l) 3.
3V to
28V
85%
1A to
10A
100k
Rad
Forw
ard
Conv
erte
rEn
able;
Syn
c –5
5 to
+10
52
x 3
x 0.
511
0 gm
Focus Product Selector Guide 69
Inte
grat
ed P
ower
Sol
utio
ns: R
elay
s
Hermatically Sealed Power Relays
# of Poles
Latch/Non–Latch
Suppressed Coils Available
Space grade Avialable per NASA EEE–INST–002
Con
tact
Rat
ing
@28
VD
C o
r 115
V 40
0 H
z
Coil AC/DC Coil
DC Coil Voltages (V)
Pull–in power (mW)
Contact Resistance (Ohms)
Insulation Resistance @500 Vdc
Dielectric @Vac
Temperature Rating (°C)
Design to meet or exceed MIL–PRF Reference
Term
inal
opt
ions
Dimensions in Inches less mounting Brackets (L x Wx H)
Resistive Load (ohms)
Inductive Load (ohms)
Motor Load (ohms)
Low Level 10–50 μA @ 10–50 mv
Gold Plated plug–in
Solder pin
3 long pins
Solder Hook
BR10
2PDT
Non–
latch
No1
––
XDC
6, 1
2, 1
8, 2
610
00.
050Ω
10 K
MΩ
250–
500
65–1
25M
IL–P
RF–3
9016
üü
üü
0.5
x 0.
24 x
0.4
BR13
2PDT
Non–
latch
No2–
3–5
––
XDC
6, 1
2, 2
6, 1
1540
, 100
, 250
0.
050Ω
10 K
MΩ
500–
1000
65–1
25M
IL–P
RF–3
9016
–ü
ü0.
81 x
0.4
1 x
0.90
BR15
4PD
TNo
n–lat
chü
5–7.
5–10
1.75
–2.5
–3.5
–X
115
VAC/
DC6,
12,
26,
115
400,
500
, 10
000.
010Ω
10 K
MΩ
1000
–125
065
–125
MIL
–PRF
–390
16ü
ü–
ü1
x 1
x 1.
3
BR19
2PDT
Non–
latch
No5,
7.5
, 10
1.75
–2.5
–3.5
–X
115
VAC/
DC6,
12,
26,
48,
115
175,
500
0.01
0Ω10
K M
Ω10
00–1
250
65–1
25M
IL–P
RF–3
9016
üü
ü–
1.08
x 0
.52
x 1.
3
BR20
2PDT
Latc
hNo
103.
54
XDC
6, 1
2, 2
6, 4
8, 1
1513
0, 2
500.
010Ω
10 K
MΩ
1000
–125
065
–125
MIL
–PRF
–390
16ü
ü–
ü1.
08 x
0.5
2x 1
.3
BR23
4PD
TLa
tch
ü10
3.5
4X
DC6,
12,
26,
48,
115
250,
500
0.01
0Ω10
K M
Ω50
0–12
5065
–125
MIL
–PRF
–390
16ü
ü–
ü1
x 1
x 1.
3
BR24
2PDT
Non–
latch
Yes
No10
3.5
4X
DC6,
12,
26
400
0.01
0Ω10
K M
Ω50
0–10
0065
–125
MIL
–PRF
–390
16ü
ü–
ü1.
02 x
0.5
2 x
0.89
BR26
2PDT
Non–
latch
No2
––
XDC
6, 1
2, 2
625
00.
050Ω
10 K
MΩ
500–
1000
65–1
25M
IL–P
RF–3
9016
üü
–ü
0.81
x 0
.4 x
0.4
1
BR24
62P
DTNo
n–lat
chYe
sü
108
2.5
–11
5 VA
C/DC
6, 1
2, 2
8, 4
850
00.
010Ω
100
MΩ
1000
–125
065
–125
MIL
–PRF
–835
36ü
üü
ü1.
03 x
.53
x 1.
01
BR24
72P
DTLa
tch
Yes
ü10
82.
5–
115
VAC/
DC6,
12,
28,
49
500
0.01
0Ω10
0 M
Ω10
00–1
250
65–1
25M
IL–P
RF–8
3536
üü
üü
1.03
x.5
3 x
1.01
BR23
0 4
PDT
Non–
latch
Yes
ü10
82.
5–
115
VAC/
DC6,
12,
28,
50
500
0.01
0Ω10
0 M
Ω10
00–1
250
65–1
25M
IL–P
RF–8
3536
üü
–ü
1.03
x 1
.0 3
x 1.
01
BR23
1 4
PDT
Latc
hYe
sü
108
2.5
–11
5 VA
C/DC
6, 1
2, 2
8, 5
150
00.
010Ω
100
MΩ
1000
–125
065
–125
MIL
–PRF
–835
36ü
ü–
ü1.
03 x
1.0
3 x
1.01
BR25
02P
DTNo
n–lat
chYe
sü
2515
5–
115
VAC/
DC6,
12,
28,
52
500
0.00
6Ω10
0 M
Ω10
00–1
250
65–1
25M
IL–P
RF–8
3536
üü
–ü
1.03
x.5
3 x
1.01
BR24
6–SX
XX2P
DTNo
n–lat
chYe
s–
108
2.5
–11
5 VA
C/DC
6, 1
2, 2
8, 4
850
00.
010Ω
100
MΩ
1000
–125
040
–200
MIL
–PRF
–835
36–
ü–
ü1.
03 x
0.5
3 x
1.01
BR25
0–SX
XX2P
DTNo
n–lat
chYe
s–
2515
5–
115
VAC/
DC6,
12,
28,
52
500
0.00
6Ω10
0 M
Ω10
00–1
250
40–2
00M
IL–P
RF–8
3536
–ü
–ü
1.03
x 0
.53
x 1.
01
Inte
grat
ed P
ower
Sol
utio
ns: R
emot
e Po
wer
Con
trol
lers
Remote Power Controllers
#of Poles
Latch/Non-Latch
Con
tact
Rat
ing
@28
VD
C o
r 115
V 40
0 H
z
Coil AC/DC Coil
Contac Voltage Drop at Rated Current
Insulation Resistance @500 Vdc
Dielectric @Vac
MIL-PRF Reference
Opt
ions
Bi-Directional
Temperature Rating
Features
Resistive Load (ohms)
Motor Load (ohms)
Factory Current Trip Currents
Factory Current Trip Times
Adjusted to Customers Specifications
Auxiliary Switch
701
SPST
M
agne
tic
Latc
hing
5–20
0 Am
ps
@ 2
8 VD
C5–
200
Amps
@ 2
8 VD
C28
VDC
.225
mv
100
MΩ
1350
–150
0M
IL-P
RF-8
3383
üü
üü
ü–5
5ºC
to 8
5ºC
1500
wat
ts o
f Pea
k Po
wer
Diss
ipat
ion
trans
ient s
uppr
essio
n70
2SP
ST
Mag
netic
La
tchi
ng
5–20
0 Am
ps
@ 2
8 VD
C or
11
5/20
8V 4
00 H
z
5–20
0 Am
ps @
28
VDC
or
115/
208V
400
Hz
28 V
DC o
r 115
VAC
40
0 HZ
.225
mv
100
MΩ
1350
–150
0M
IL-P
RF-8
3383
üü
üü
ü–5
5ºC
to 8
5ºC
703
3PST
Mag
netic
La
tchi
ng
Mag
netic
La
tchi
ng5–
150
Amps
@
115
/208
V 40
0 Hz
5–15
0 Am
ps
@ 1
15/2
08V
400
Hz28
VDC
or 1
15 V
AC
400
HZ.2
25 m
v 10
0 M
Ω13
50–1
500
MIL
-PRF
-833
83ü
üü
ü
–55º
C to
85º
C
www.microchip.com70
PoE
PSE
ICs
Prod
uct
Des
crip
tion
Prod
uct
Type
Stan
dard
s Su
ppor
ted
Port
s2-
Pair
Pow
er4-
Pair
Pow
erM
axim
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Cur
rent
PoE
Cla
ss
(0-8
)
PoE
Type
(1
-4)
FETs
Sens
e R
esis
tor
Ope
ratin
g Te
mpe
ratu
rePo
E C
ontr
olle
rH
ost
Inte
rfac
eTe
mpe
ratu
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Gra
dePa
ckag
e Ty
pePa
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e C
arrie
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PD69
101I
LQ-T
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at s
ingl
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E co
ntro
ller +
man
ager
, ind
ustri
al te
mp
PSE
Man
ager
IEEE
802
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EE 8
02.3
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36.2
5WNA
0.72
5A0-
41-
2In
tern
al 0.
3ΩEx
tern
al 0.
5Ω–4
0°C
to 8
5°C
Auto
mod
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mon
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24 Q
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104B
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802
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0-4
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5°C
Auto
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mm
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02.3
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IEEE
802
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725A
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5°C
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108I
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0.36
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PD69
100
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UA
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48 Q
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PD69
200X
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IEEE
802
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IEEE
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802
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96NA
NANA
NANA
NANA
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C to
85°
CNA
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UART
Indu
stria
l32
QFN
5
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mm
Tray
PD69
204T
4ILQ
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802
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oH, 4
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IEEE
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802
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447
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95W
0.94
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81-
4In
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0°C
to 8
5°C
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200
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6921
0 /
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PD69
208M
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-LE
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802
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835
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1-3
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C to
85°
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6920
0 /
PD69
210
/ M
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stria
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8
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mm
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and
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PD69
208T
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847
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95W
0.94
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to 8
5°C
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200
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6921
0 /
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dust
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56 Q
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m
m x
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96NA
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C to
85°
CNA
I²C
UART
Indu
stria
l32
QFN
5
mm
x 5
mm
Tray
Focus Product Selector Guide 71
PoE
PSE
EVBs
Prod
uct
Des
crip
tion
Prod
uct
Type
Stan
dard
s Su
ppor
ted
Num
ber o
f Po
rts
2-Pa
ir Po
wer
4-Pa
ir Po
wer
PoE
Cla
ss
(0-8
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E Ty
pe
(1-4
)
PD-P
SE
Pow
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Forw
ardi
ngH
ost I
nter
face
Feat
ured
PD-IM
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1IE
EE 8
02.3
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ual-p
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SE E
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PD69
101
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EE 8
02.3
af
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802
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0-4
1-2
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02.3
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IEEE
802
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EE 8
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IEEE
802
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EE 8
02.3
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802
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IEEE
802
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EE 8
02.3
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802
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02.3
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6920
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EE 8
02.3
af
IEEE
802
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EE 8
02.3
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02.3
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802
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211
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IEEE
802
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t/bt T
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g PD
6920
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and
PD69
210,
LED
stre
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IEEE
802
.3af
IE
EE 8
02.3
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IEEE
802
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830
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PD69
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6921
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IEEE
802
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t/bt T
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4, e
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4-p
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EVB
feat
urin
g PD
6920
8T4
and
PD69
210,
LED
stre
am s
uppo
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E IC
IEEE
802
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IE
EE 8
02.3
at
IEEE
802
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WUA
RT
USB
PD69
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02.3
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IEEE
802
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LQ-T
RIE
EE 8
02.3
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C w
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EE 8
02.3
at T
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2, P
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inte
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0.6
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FET
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IEEE
802
.3af
IE
EE 8
02.3
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Dua
l-IEE
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201I
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EE 8
02.3
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2, P
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IEEE
802
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EE 8
02.3
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Dua
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EE 8
02.3
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IEEE
802
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EE 8
02.3
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and
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802
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IEEE
802
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EE 8
02.3
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211I
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EE 8
02.3
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IEEE
802
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EE 8
02.3
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802
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224I
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EE 8
02.3
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IEEE
802
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EE 8
02.3
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IEEE
802
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EE 8
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100
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IEEE
802
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02.3
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IEEE
802
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VBIE
EE 8
02.3
af
IEEE
802
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PD70
101
3.3W
31
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101E
VB6F
IEEE
802
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feat
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7010
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conv
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IEEE
802
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02.3
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31
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IEEE
802
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EE 8
02.3
af
IEEE
802
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101
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31
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Yes
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101E
VB15
F-12
IEEE
802
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ype
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feat
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7010
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flyb
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conv
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r, 12
V 1.
1Am
p ou
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PD
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IEEE
802
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IE
EE 8
02.3
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7010
113
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31
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201E
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F-3
IEEE
802
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feat
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7020
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conv
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VBIE
EE 8
02.3
af
IEEE
802
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201
25W
42
3.3V
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201E
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IEEE
802
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7020
1 w
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conv
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r, 5V
5Am
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tput
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IEEE
802
.3af
IE
EE 8
02.3
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7020
125
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25V
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PD70
201E
VB25
F-12
IEEE
802
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feat
urin
g PD
7020
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flyb
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conv
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IEEE
802
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IE
EE 8
02.3
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7020
125
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212
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201E
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02.3
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PD E
VBIE
EE 8
02.3
af
IEEE
802
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PD70
201
25W
42
5V5A
NoId
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Yes
Flyb
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PD70
201E
VB25
FW-3
Dual-
IEEE
802
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Typ
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(4 p
air) P
D EV
B fe
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PD70
201,
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uppl
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war
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7.
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IEEE
802
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IE
EE 8
02.3
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7020
125
W4
23.
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EE 8
02.3
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PD70
201
w/
isolat
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12V
4Am
p ou
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PD
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IEEE
802
.3af
IE
EE 8
02.3
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7020
148
W4
212
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Yes
Flyb
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PD70
201E
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EE 8
02.3
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PD E
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PD70
201
w/
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outp
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7-54
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put
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IEEE
802
.3af
IE
EE 8
02.3
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7020
125
W4
25V
5ANo
Stan
dard
Yes
Flyb
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PD70
211E
VB50
FW-3
Dual-
IEEE
802
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ype
2/Po
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EVB
feat
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g PD
7021
1, 4
pair
sup
ply
w/is
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conv
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r, 3.
3V
15A
outp
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EVB
IEEE
802
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IE
EE 8
02.3
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PoH
PD70
211
50W
42
3.3V
15A
NoId
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Yes
Activ
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forw
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PD70
211E
VB50
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Dual-
IEEE
802
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feat
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g PD
7021
1, 4
pair
sup
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w/is
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conv
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10
A ou
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IEEE
802
.3af
IE
EE 8
02.3
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PoH
PD70
211
50W
42
5V10
ANo
Idea
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clam
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PD70
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IEEE
802
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EVB
feat
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7021
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02.3
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802
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151
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212
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PD70
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02.3
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IEEE
802
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IE
EE 8
02.3
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PoH
PD70
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72W
42
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EE 8
02.3
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PD70
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™
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VBIE
EE 8
02.3
af
IEEE
802
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PD70
210
PD
7022
472
W4
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NA
PD70
224E
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EE 8
02.3
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PoH
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PD70
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IEEE
802
.3af
IE
EE 8
02.3
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PD70
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472
W4
2NA
NANo
Idea
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4 po
rts, 3
0W, I
EEE
802.
3at-c
ompl
iant i
ndoo
r PoE
mid
span
Indo
or30
W4
1GNo
ACSt
anda
lone
uni
tPD
-900
6G/A
CD
C/M
-XX
6 po
rts, 3
0W, I
EEE
802.
3at-c
ompl
iant,
indo
or P
oE m
idsp
an, m
anag
edIn
door
30W
61G
Yes
AC a
nd D
CSt
anda
lone
uni
tPD
-901
2G/A
CD
C/M
-XX
12 p
orts
, 30W
, IEE
E 80
2.3a
t-com
plian
t, in
door
PoE
mid
span
, man
aged
Indo
or30
W12
1GYe
sAC
and
DC
Stan
dalo
ne u
nit
PD-9
024G
/AC
DC
/M-X
X24
por
ts, 3
0W, I
EEE
802.
3at-c
ompl
iant,
indo
or P
oE m
idsp
an, m
anag
edIn
door
30W
241G
Yes
AC a
nd D
CSt
anda
lone
uni
tPD
-950
1GC
/AC
-XX
1 po
rt, 6
0W, I
EEE
802.
3bt-c
ompl
iant i
ndoo
r PoE
mid
span
Indo
or60
W1
1GNo
ACSt
anda
lone
uni
tPD
-950
1-10
GC
/AC
-XX
1 po
rt, 6
0W, I
EEE
802.
3bt-c
ompl
iant i
ndoo
r PoE
mid
span
with
10G
dat
a ra
teIn
door
60W
11G
NoAC
Stan
dalo
ne u
nit
PD-9
501G
/48V
DC
-XX
1 po
rt, 6
0W, I
EEE
802.
3at c
ompl
iant i
ndoo
r PoE
mid
span
Indo
or60
W1
1GNo
DCSt
anda
lone
uni
tPD
-950
1GR/
SP/A
C-X
X1
port,
60W
, IEE
E 80
2.3a
t-com
plian
t ind
oor P
oE m
idsp
an w
ith s
urge
pro
tect
ion
Indo
or60
W1
1GNo
ACSt
anda
lone
uni
tPD
-950
1GC
S/AC
-XX
1 po
rt, 6
0W, I
EEE
802.
3bt-c
ompl
iant P
oE m
edia
conv
erte
r to
exte
nd e
xistin
g ne
twor
k di
stan
ce w
ith fi
ber c
ablin
gIn
door
60W
11G
NoAC
Stan
dalo
ne u
nit
PD-9
506G
C/A
C-X
X6
ports
, 60W
, IEE
E 80
2.3b
t-com
plian
t, in
door
EEP
oE m
idsp
an, m
anag
edIn
door
60W
61G
Yes
ACSt
anda
lone
uni
tPD
-951
2GC
/AC
-XX
12 p
orts
, 60W
, IEE
E 80
2.3b
t-com
plian
t, in
door
EEP
oE m
idsp
an, m
anag
edIn
door
60W
121G
Yes
AC a
nd D
CSt
anda
lone
uni
tPD
-952
4GC
/AC
-XX
24 p
orts
, 60W
, IEE
E 80
2.3b
t-com
plian
t, in
door
EEP
oE m
idsp
an, m
anag
edIn
door
60W
241G
Yes
AC a
nd D
CSt
anda
lone
uni
tPD
-960
1GC
/AC
-XX
1 po
rt, 9
0W, I
EEE
802.
3bt-c
ompl
iant i
ndoo
r por
t PoE
mid
span
Indo
or90
W1
1GNo
ACSt
anda
lone
uni
tPD
-960
6GC
/AC
-XX
6 po
rts, 9
0W, I
EEE
802.
3bt-c
ompl
iant i
ndoo
r PoE
mid
span
, man
aged
Indo
or90
W6
1GYe
sAC
Stan
dalo
ne u
nit
PD-9
612G
C/A
C-X
X12
por
ts, 9
0W, I
EEE
802.
3bt-c
ompl
iant i
ndoo
r PoE
mid
span
, man
aged
Indo
or90
W12
1GYe
sAC
and
DC
Stan
dalo
ne u
nit
PD-9
624G
C/A
C-X
X24
por
ts, 9
0W, I
EEE
802.
3bt-c
ompl
iant i
ndoo
r PoE
mid
span
, man
aged
Indo
or90
W24
1GYe
sAC
and
DC
Stan
dalo
ne u
nit
PDS-
408G
/AC
-XX
8+3
ports
, 90W
, IEE
E 80
2.3b
t-com
plian
t, fa
nles
s Po
E sw
itch
for d
igita
l ceil
ing,
man
aged
In
door
90W
8+3
1GYe
sAC
Stan
dalo
ne u
nit
PD-9
001G
CO
/AC
1 po
rt , 3
0W, I
EEE
802.
3at-c
ompl
iant,
IP67
out
door
PoE
mid
span
with
ext
ende
d te
mpe
ratu
re ra
nge
Out
door
30W
11G
NoAC
Stan
dalo
ne u
nit
PD-9
501G
CO
/AC
1 po
rt , 6
0W, I
EEE
802.
3bt-c
ompl
iant,
IP67
out
door
PoE
mid
span
with
ext
ende
d te
mpe
ratu
re ra
nge
Out
door
60W
11G
NoAC
Stan
dalo
ne u
nit
PDS-
104G
O/A
C/M
-IN4
ports
, 60W
, out
door
PoE
sw
itch
with
sur
ge p
rote
ctio
n an
d in
tern
atio
nal p
ower
cor
d, m
anag
edO
utdo
or60
W4
1GYe
sAC
Stan
dalo
ne u
nit
PDS-
104G
O/A
C/M
-NA
4 po
rts, 6
0W, o
utdo
or P
oE s
witc
h w
ith s
urge
pro
tect
ion
and
North
Am
erica
pow
er c
ord,
man
aged
Out
door
60W
41G
Yes
ACSt
anda
lone
uni
tPD
-960
1GO
/AC
1 po
rt, 9
0W, I
EEE
802.
3at-c
ompl
iant,
outd
oor P
oE m
idsp
an w
ith s
urge
pro
tect
ion
Out
door
90W
11G
NoAC
Stan
dalo
ne u
nit
PD-9
001G
CI/D
C1
port,
30W
, IEE
E 80
2.3a
t-com
plian
t ind
ustri
al gr
ade
PoE
mid
span
Indu
stria
l30
W1
1GNo
DCSt
anda
lone
uni
tPD
-950
1GC
I/DC
F1
port,
60W
, IEE
E 80
2.3b
t-com
plian
t ind
ustri
al gr
ade
PoE
mid
span
Indu
stria
l60
W1
1GNo
DCSt
anda
lone
uni
tPD
-AS-
951/
12-2
4Si
ngle
port
PoE
splitt
er fo
r con
tem
pora
ry d
evice
s un
able
to a
ccep
t pow
er v
ia Et
hern
etIn
door
54W
11G
PoE
Stan
dalo
ne u
nit
PD-P
OE-
EXTE
ND
ERSi
ngle
port
PoE
exte
nder
to e
xten
d Et
hern
et n
etw
ork
rang
e be
yond
100
mIn
door
30W
11G
DCSt
anda
lone
uni
tPD
-OU
T/SP
11Si
ngle
port
PoE
surg
e pr
otec
tor f
or E
ther
net n
etw
orks
with
out
door
PoE
mid
span
s an
d po
wer
ed d
evice
sO
utdo
or1
1GDC
Stan
dalo
ne u
nit
PoE
Test
erPo
E te
ster
to te
st R
J-45
for P
oEIn
door
1GPo
ESt
anda
lone
uni
t
XX In
dica
tes
pow
er c
ord
code
: EU
(Eur
ope)
, UK
(uni
ted
King
dom
), US
(Nor
th A
mer
ica),
BR (B
razil
), JP
(Jap
an),
AU (A
ustra
lia)
www.microchip.com74
Touc
h an
d 3D
Ges
ture
Con
trol
: Cap
aciti
ve T
ouch
Con
trol
lers
Prod
uct
Butto
nsLE
D
Driv
ers
Addi
tiona
l Fea
ture
sPr
oxim
ityIn
terf
ace
Safe
ty c
ertifi
ed T
ouch
VD
E/U
L 60
730
clas
s B
Volta
ge (V
)Pi
nsPa
ckag
es
AT42
QT1
010
1–
adju
stab
le se
nsitiv
ity, n
oise
filte
ring
üG
PIO
1.8–
5.5
6/8
SOT-
23, U
DFN
AT42
QT1
011
1–
adju
stab
le se
nsitiv
ity, n
oise
filte
ring
üG
PIO
1.8–
5.5
6/8
SOT-
23, U
DFN
AT42
QT1
012
1–
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
eü
GPI
O1.
8–5.
56/
8SO
T-23
, UDF
N
AT42
QT1
040
4–
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
GPI
O1.
8–5.
520
VQFN
AT42
QT1
050
5–
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
I²C/G
PIO
1.8–
5.5
12/2
0VQ
FN, W
LCSP
AT42
QT1
060
6–
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
I²C/G
PIO
1.8–
5.5
28VQ
FN
AT42
QT1
070
7–
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
I²C/G
PIO
1.8–
5.5
14/2
0SO
IC, V
QFN
AT42
QT2
100
10–
slide
r/whe
el, a
djus
tabl
e se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
SPI/G
PIO
2.0–
5.5
32VQ
FN
AT42
QT1
110
11–
adju
stab
le se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
SPI/G
PIO
3.0–
5.5
32TQ
FP, V
QFN
AT42
QT2
120
12–
slide
r/whe
el, a
djus
tabl
e se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
üI²C
1.8–
5.5
20SO
IC, T
SSO
P, V
QFN
AT42
QT2
160
16–
slide
r/whe
el, a
djus
tabl
e se
nsitiv
ity, n
oise
rejec
tion
filter
s, lo
w-p
ower
mod
e, A
djac
ent k
ey s
uppr
essio
n (A
KS)
I²C1.
8–5.
528
VQFN
AT42
QT1
244
24–
IEC/
EN/U
L607
30 C
lass
B sa
fety,
FM
EA, a
djus
tabl
e se
nsitiv
ity, n
oise
rejec
tion
filter
s, A
djac
ent k
ey s
uppr
essio
n (A
KS)
I²Cü
3.0–
5.5
32TQ
FP, V
QFN
AT42
QT1
245
24–
IEC/
EN/U
L607
30 C
lass
B sa
fety,
FM
EA, a
djus
tabl
e se
nsitiv
ity, n
oise
rejec
tion
filter
s, A
djac
ent k
ey s
uppr
essio
n (A
KS)
SPI
ü3.
0–5.
532
TQFP
, VQ
FN
AT42
QT1
481
48–
IEC/
EN/U
L607
30 C
lass
B sa
fety,
FM
EA, a
djus
tabl
e se
nsitiv
ity, n
oise
rejec
tion
filter
sSP
I/UAR
Tü
4.8–
5.3
44TQ
FP
AT42
QT2
640
64–
IEC/
EN/U
L607
30 C
lass
B sa
fety,
FM
EA, a
djus
tabl
e se
nsitiv
ity, n
oise
rejec
tion
filter
sSP
Iü
4.8–
5.3
44TQ
FP
CAP
1133
33
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I²C3.
0–3.
610
QFN
CAP
1106
6–
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I²C3.
0–3.
610
QFN
CAP
1126
62
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I²C/S
PI3.
0–3.
616
QFN
CAP
1166
66
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I²C/S
PI3.
0–3.
620
QFN
CAP
1128
82
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I²C/S
PI3.
0–3.
620
QFN
CAP
1188
88
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I²C/S
PI3.
0–3.
624
QFN
CAP
1114
1411
slide
r, re
set,
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I²C3.
0–3.
632
QFN
CAP
1203
3–
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nI²C
3.3–
5.0
8Q
FN
CAP
1293
3–
alert,
aut
omat
ic ca
libra
tion,
bas
e ca
pacit
ance
com
pens
atio
nü
I²CQ
FN
OTN
Pro
cess
ors
Prod
uct
Des
crip
tion
Max
Ban
dwid
th
Gbp
sLi
ne R
ates
Clie
nt In
terf
aces
Max
SER
DES
R
ate
Gbp
sO
DU
k Sw
itchi
ngSy
stem
In
terf
aces
OTN
En
cryp
tion
RoH
S
PM54
20Hy
PHY-
20G
OTN
Pro
cess
or40
OTU
2G
bE/F
C/SD
H/SO
NET/
OTU
k/Vi
deo
11Ye
s (O
DU1+
)In
terla
ken
–ü
PM54
26Hy
PHY-
10G
OTN
Pro
cess
or20
OTU
2G
bE/F
C/SD
H/SO
NET/
OTU
k/Vi
deo
11Ye
s (O
DU1+
)In
terla
ken
–ü
PM54
40DI
GI-1
20G
OTN
Pro
cess
or24
0O
TU2/
OTU
3/O
TU4
GbE
/FC/
SDH/
SONE
T/O
TUk
11Ye
s (O
DU0+
)In
terla
ken
–ü
PM54
41DI
GI-6
0G O
TN P
roce
ssor
120
OTU
2/O
TU3
GbE
/FC/
SDH/
SONE
T/O
TUk
28Ye
s (O
DU0+
)In
terla
ken
–ü
PM54
50Hy
PHY-
20G
flex
OTN
Pro
cess
or40
OTU
2G
bE/F
C/SD
H/SO
NET/
OTU
k/Vi
deo
11Ye
s (O
DU0+
)In
terla
ken
–ü
PM54
51Hy
PHY-
AXS
OTN
Pro
cess
or40
OTU
2G
bE/F
C/SD
H/SO
NET/
OTU
k/Vi
deo
11Ye
s (O
DU0+
)–
–ü
Focus Product Selector Guide 75
OTN
Pro
cess
ors
Prod
uct
Des
crip
tion
Max
Ban
dwid
th
Gbp
sLi
ne R
ates
Clie
nt In
terf
aces
Max
SER
DES
R
ate
Gbp
sO
DU
k Sw
itchi
ngSy
stem
In
terf
aces
OTN
En
cryp
tion
RoH
S
PM54
56Hy
PHY-
10G
flex
OTN
Pro
cess
or20
OTU
2G
bE/F
C/SD
H/SO
NET/
OTU
k/Vi
deo
11Ye
s (O
DU0+
)In
terla
ken
–ü
PM59
80DI
GI-1
00G
X O
TN P
roce
ssor
200
OTU
2/O
TU3/
OTU
4G
bE/F
C/SD
H/SO
NET/
OTU
k28
Yes
(ODU
0+)
Inte
rlake
nü
ü
PM59
81DI
GI-1
00G
X O
TN P
roce
ssor
(with
out e
ncry
ptio
n)20
0O
TU2/
OTU
3/O
TU4
GbE
/FC/
SDH/
SONE
T/O
TUk
28Ye
s (O
DU0+
)In
terla
ken
–ü
PM59
90DI
GI-G
4 O
TN P
roce
ssor
Fam
ily80
0O
TU2/
OTU
3/O
TU4
GbE
/FC/
SDH/
SONE
T/O
TUk
28Ye
s (O
DU0+
)In
terla
ken
üü
PM59
91DI
GI-G
4 O
TN P
roce
ssor
(with
out e
ncry
ptio
n)80
0O
TU2/
OTU
3/O
TU4
GbE
/FC/
SDH/
SONE
T/O
TUk
28Ye
s (O
DU0+
)In
terla
ken
–ü
PM60
10DI
GI-G
5 O
TN P
roce
ssor
Fam
ily12
00O
TU2/
OTU
4/O
TUCn
GbE
/FC/
OTU
k/Fl
exO
56Ye
s (O
DU0+
)In
terla
ken
üü
PM60
11DI
GI-G
5 O
TN P
roce
ssor
(with
out e
ncry
ptio
n)12
00O
TU2/
OTU
4/O
TUCn
GbE
/FC/
OTU
k/Fl
exO
56Ye
s (O
DU0+
)In
terla
ken
–ü
OTN
PH
Ys
Prod
uct
Des
crip
tion
# Po
rts /
Rate
sO
TN L
ine
Rate
sEt
hern
et L
ine
Rate
sM
ax S
ERD
ES R
ates
G
bps
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DC
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umbe
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Low
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D2 1
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hou
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Smar
ROC
3100
2 (×
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643
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mbe
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Flas
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n bo
ard
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p
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tec
Smar
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D
3162
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2299
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R12
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ter
8 in
tern
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10
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35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.88M
hou
rs 1
2 G
bps
Smar
ROC
3100
2 (×
4) S
FF-8
643
2 G
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2100
MHz
max
Cach
e 4.
0 E
mbe
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Flas
h ba
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n bo
ard
ASCM
-17F
sup
erca
p
Adap
tec
Smar
tRAI
D
3154
-24i
22
9470
0-R
12 G
bps
PCIe
Gen
3
SAS/
SATA
RAI
D Ad
apte
r 24
inte
rnal
8-L
ane
PCIe
Gen
3
Har
dwar
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ID 0
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, 10,
50,
60,
1
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and
10
ADM
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.7M
hou
rs 1
2 G
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Smar
ROC
3100
6 (×
4) S
FF-8
643
4 G
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R4/
2100
MHz
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Cach
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0 E
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Flas
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ther
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p
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Smar
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D
3154
-8i1
6e
2294
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s PC
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ter 8
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10
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.6 L
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mm
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67 m
m)
Low
-pro
file, M
D2 2
M h
ours
12
Gbp
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C 31
00 2
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SFF
-864
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axCa
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lash
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tec
Smar
tRAI
D
3154
-16i
22
9500
0-R
12 G
bps
PCIe
Gen
3
SAS/
SATA
RAI
D Ad
apte
r 16
inte
rnal
8-L
ane
PCIe
Gen
3
Har
dwar
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ID 0
, 1,
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50,
60,
1
ADM
and
10
ADM
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.7M
hou
rs 1
2 G
bps
Smar
ROC
3100
4 (×
4) S
FF-8
643
4 G
B DD
R4/
2100
MHz
max
Cach
e 4.
0 E
mbe
dded
Flas
h ba
ckup
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ther
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SCM
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erca
p
Adap
tec
Smar
tRAI
D
3154
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e 22
9510
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12 G
bps
PCIe
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3
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SATA
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apte
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tern
al/
8 ex
tern
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, 10,
50,
60,
1
ADM
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10
ADM
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35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 2
M h
ours
12
Gbp
s Sm
arRO
C 31
00 2
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SFF
-864
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) SFF
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axCa
che
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Em
bedd
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lash
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tec
Smar
tRAI
D
3154
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2291
000-
R12
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s PC
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en 3
SA
S/SA
TA R
AID
Adap
ter
8 in
tern
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Har
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1
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and
10
ADM
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35 H
× 6
.6 L
(64
mm
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67 m
m)
Low
-pro
file, M
D2 1
.37M
hou
rs 1
2 G
bps
Smar
ROC
3100
2 (×
4) S
FF-8
643
4 G
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2100
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max
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e 4.
0 E
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Flas
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ckup
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ther
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Smar
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3154
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2290
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ter 8
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ADM
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10
ADM
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.37M
hou
rs 1
2 G
bps
Smar
ROC
3100
2 (×
4) S
FF-8
644
4 G
B DD
R4/
2100
MHz
max
Cach
e 4.
0 E
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dded
Flas
h ba
ckup
Te
ther
ed A
SCM
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erca
p
Adap
tec
Smar
tRAI
D
3152
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2290
200-
R12
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s PC
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AID
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ter
8 in
tern
al 8
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Har
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ID 0
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, 10,
50,
60,
1
ADM
and
10
ADM
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.37M
hou
rs 1
2 G
bps
Smar
ROC
3100
2 (×
4) S
FF-8
643
4 G
B DD
R4/
2100
MHz
max
Cach
e 4.
0 E
mbe
dded
Flas
h ba
ckup
Te
ther
ed A
SCM
-35F
sup
erca
p
Adap
tec
Smar
tRAI
D
3102
-8i
2294
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R12
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s PC
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ter
8 in
tern
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Har
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2.5
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mm
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67 m
m)
Low
-pro
file, M
D2 1
.37M
hou
rs 1
2 G
bps
Smar
ROC
3100
2 (×
4) S
FF-8
643
2 G
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R4/
2100
MHz
NA
NA
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tec
Smar
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D
3101
-4i
2291
700-
R12
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s PC
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ter
4 in
tern
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Har
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60,
1
ADM
and
10
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2.53
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× 5.
2 L
(64
mm
× 1
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8 m
m)
Low
-pro
file, M
D2 1
.37M
hou
rs 1
2 G
bps
Smar
ROC
3100
1 (×
4) S
FF-8
643
1 G
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R4/
2100
MHz
NA
NA
Adap
tec
Smar
tRAI
D
3151
-4i
2294
900-
R12
Gbp
s PC
Ie G
en 3
SA
S/SA
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AID
Adap
ter
4 in
tern
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ID 0
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and
10
ADM
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× 5.
2 L
(64
mm
× 1
32.0
8 m
m)
Low
-pro
file, M
D2 1
.37M
hou
rs 1
2 G
bps
Smar
ROC
3100
1 (×
4) S
FF-8
643
1 G
B DD
R4/
2100
MHz
max
Cach
e 4.
0 E
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Flas
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Te
ther
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SCM
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sup
erca
p
Adap
tec
Smar
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D
3102
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23
0440
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12 G
bps
PCIe
Gen
3
SAS/
SATA
RAI
D Ad
apte
r 8
inte
rnal
8-L
ane
PCIe
Gen
3
Har
dwar
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ID 0
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1 A
DM a
nd
10 A
DM
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.37M
hou
rs 1
2 G
bps
Smar
ROC
3100
2 (×
4) S
FF-8
643
2 G
B DD
R4/
2100
MHz
NA
NA
Adap
tec
Smar
tRAI
D
3101
E-4i
2304
200-
R12
Gbp
s PC
Ie G
en 3
SA
S/SA
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Adap
ter
4 in
tern
al 8
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Har
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2.53
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× 5.
2 L
(64
mm
× 1
32.0
8 m
m)
Low
-pro
file, M
D2 1
.37M
hou
rs 1
2 G
bps
Smar
ROC
3100
1 (×
4) S
FF-8
643
1 G
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R4/
2100
MHz
NA
NA
Adap
tec
Smar
tHBA
21
00-2
4i
2301
600-
R12
Gbp
s PC
Ie G
en 3
SA
S/SA
TA H
ost B
us
Adap
ter
24
inte
rnal
8-L
ane
PCIe
Gen
3 0
, 1, 1
0, 5
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 2
.73M
hou
rs 1
2 G
bps
Smar
tIOC
2100
6 (×
4) S
FF-8
643
NA N
A N
A
Adap
tec
Smar
tHBA
21
00-1
6i
2302
100-
R12
Gbp
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Ie G
en 3
SA
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us
Adap
ter
16
exte
rnal
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Gen
3 0
, 1, 1
0, 5
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 2
.73M
hou
rs 1
2 G
bps
Smar
tIOC
2100
4 (×
4) S
FF-8
643
NA N
A N
A
Adap
tec
Smar
tHBA
21
00-4
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2292
200-
R12
Gbp
s PC
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SA
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us
Adap
ter
4 in
tern
al 4
exte
rnal
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, 1, 1
0, 5
2.53
5 H
× 5.
2 L
(64
mm
× 1
32.0
8 m
m)
Low
-pro
file, M
D2 >
1.4
M h
ours
12
Gbp
s Sm
artIO
C 21
00 1
(×4)
SFF
-864
3/
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FF-8
644
NA N
A N
A
Focus Product Selector Guide 77
DC
S
Prod
uct
Part
N
umbe
rD
escr
iptio
nPo
rt
Cou
ntIn
terf
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RAI
D L
evel
Phys
ical
D
imen
sion
sFo
rm F
acto
rM
TBF
at 4
0°C
Con
trol
ler
Con
nect
ors
Cac
heSS
D C
ache
Pr
otec
tion
Cac
he P
rote
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n
Adap
tec
Smar
tHBA
21
00-8
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9040
0-R
12 G
bps
PCIe
Gen
3
SAS/
SATA
Hos
t Bus
Ad
apte
r 8
inte
rnal
8-L
ane
PCIe
Gen
3 0
, 1, 1
0, 5
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.76M
hou
rs 1
2 G
bps
Smar
tIOC
2100
2 (×
4) S
FF-8
643
NA N
A N
A
Adap
tec
Smar
tHBA
21
00-8
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2301
900-
R12
Gbp
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Ie G
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SA
S/SA
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us
Adap
ter
8 in
tern
al 8
exte
rnal
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PCIe
Gen
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, 1, 1
0, 5
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.76M
hou
rs 1
2 G
bps
Smar
tIOC
2100
2 (×
4) S
FF-8
643
NA N
A N
A
Adap
tec
HBA
11
00-1
6e
2293
600-
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s PC
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SA
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us
Adap
ter
16
exte
rnal
8-L
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.535
H ×
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4 m
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167
mm
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ours
12
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00 4
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SFF
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NA
NA
Adap
tec
HBA
11
00-1
6i22
9350
0-R
12 G
bps
PCIe
Gen
3
SAS/
SATA
Hos
t Bus
Ad
apte
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6 in
tern
al 8
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e PC
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H ×
6.6
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4 m
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167
mm
) L
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rofile
, MD2
2.7
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ours
12
Gbp
s Sm
artIO
C 21
00 4
(×4)
SFF
-864
3NA
NA
NA
Adap
tec
HBA
11
00-2
4i22
9380
0-R
12 G
bps
PCIe
Gen
3
SAS/
SATA
Hos
t Bus
Ad
apte
r 2
4 in
tern
al 8
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e PC
Ie G
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NA 2
.535
H ×
6.6
L (6
4 m
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167
mm
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ow-p
rofile
, MD2
2.7
3M h
ours
12
Gbp
s Sm
artIO
C 21
00 6
(×4)
SFF
-864
3NA
NA
NA
Adap
tec
HBA
11
00-4
i 22
9340
0-R
12 G
bps
PCIe
Gen
3
SAS/
SATA
Hos
t Bus
Ad
apte
r 4
inte
rnal
8-L
ane
PCIe
Gen
3NA
2.5
35 H
× 5
.2 L
(64
mm
× 1
32.0
8 m
m)
Low
-pro
file, M
D2 >
1.4M
hou
rs 1
2 G
bps
Smar
tIOC
2100
1 (×
4) S
FF-8
643
NA N
A N
A
Adap
tec
HBA
11
00-8
e22
9330
0-R
12 G
bps
PCIe
Gen
3
SAS/
SATA
Hos
t Bus
Ad
apte
r 8
ext
erna
l 8
-Lan
e PC
Ie G
en 3
NA 2
.535
H ×
6.6
L (6
4 m
m ×
167
mm
) L
ow-p
rofile
, MD2
1.3
8M h
ours
12
Gbp
s Sm
artIO
C 21
00 2
(×4)
SFF
-864
4NA
NA
NA
Adap
tec
HBA
11
00-8
i 22
9320
0-R
12 G
bps
PCIe
Gen
3
SAS/
SATA
Hos
t Bus
Ad
apte
r 8
inte
rnal
8-L
ane
PCIe
Gen
3NA
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 1
.36M
hou
rs 1
2 G
bps
Smar
tIOC
2100
2 (×
4) S
FF-8
643
NA N
A N
A
Adap
tec
HBA
11
00-8
i8e
2293
700-
R12
Gbp
s PC
Ie G
en 3
SA
S/SA
TA H
ost B
us
Adap
ter
8 in
tern
al 8
exte
rnal
8-L
ane
PCIe
Gen
3NA
2.5
35 H
× 6
.6 L
(64
mm
× 1
67 m
m)
Low
-pro
file, M
D2 2
.73M
hou
rs 1
2 G
bps
Smar
tIOC
2100
2 (×
4) S
FF-8
643/
2
(×4)
SFF
-864
4NA
NA
NA
Switc
htec
PSX
, PFX
, PAX
Gen
3, G
en 4
Dev
ice
Com
paris
on
Switchtec™ PFX 96xG3
Switchtec™ PFX 80xG3
Switchtec™ PFX 64xG3
Switchtec™ PFX 48xG3
Switchtec™ PFX 32xG3
Switchtec™ PFX 24xG3
Switchtec™ PFX -L 96xG3
Switchtec™ PFX-L 80xG3
Switchtec™ PFX-L 64xG3
Switchtec™ PFX-L 48xG3
Switchtec™ PFX-L 32xG3
Switchtec™ PFX-L 24xG3
Switchtec™ PFX -I 96xG3
Switchtec™ PFX-I 80xG3
Switchtec™ PFX-I 64xG3
Switchtec™ PFX-I 48xG3
Switchtec™ PFX-I 32xG3
Switchtec™ PFX-I 24xG3
Lane
s96
8064
4832
2496
8064
4832
2496
8064
4832
24Po
rts48
4032
2416
1224
2016
128
648
4032
2416
12Po
rt Bi
furc
atio
nx2
/4/8
/16
x2/4
/8/1
6x2
/4/8
/16
x2/4
/8/1
6x2
/4/8
/16
x2/4
/8/1
6x4
/8/1
6x4
/8/1
6x4
/8/1
6x4
/8/1
6x4
/8/1
6x4
/8/1
6x2
/4/8
/16
x2/4
/8/1
6x2
/4/8
/16
x2/4
/8/1
6x2
/4/8
/16
x2/4
/8/1
6N
TBs
4840
3224
1612
2 (a
ny p
ort)
2 (a
ny p
ort)
2 (a
ny p
ort)
2 (a
ny p
ort)
2 (a
ny p
ort)
2 (a
ny p
ort)
4840
3224
1612
Virtu
al S
witc
hes
2420
1612
86
66
66
43
2420
1612
86
PCIe
Mul
ticas
tYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sD
owns
tream
Por
t C
onta
inm
ent
Yes
Yes
Yes
Yes
Yes
Yes
NoNo
NoNo
NoNo
Yes
Yes
Yes
Yes
Yes
Yes
Com
plet
ion
Tim
eout
Sy
nthe
sis
Yes
Yes
Yes
Yes
Yes
Yes
NoNo
NoNo
NoNo
Yes
Yes
Yes
Yes
Yes
Yes
UEC
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
Hot
Plu
g C
trls
4840
3224
1612
66
66
66
4840
3224
1612
Cus
tom
er
Prog
ram
mab
leNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
No
Mul
ti-ho
st I/
O S
harin
gNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoPC
Ie F
abric
Sup
port
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
DM
ANo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
No
www.microchip.com78
Switc
htec
PSX
, PFX
, PAX
Gen
3, G
en 4
Dev
ice
Com
paris
on
Switchtec™ PFX 96xG3
Switchtec™ PFX 80xG3
Switchtec™ PFX 64xG3
Switchtec™ PFX 48xG3
Switchtec™ PFX 32xG3
Switchtec™ PFX 24xG3
Switchtec™ PFX -L 96xG3
Switchtec™ PFX-L 80xG3
Switchtec™ PFX-L 64xG3
Switchtec™ PFX-L 48xG3
Switchtec™ PFX-L 32xG3
Switchtec™ PFX-L 24xG3
Switchtec™ PFX -I 96xG3
Switchtec™ PFX-I 80xG3
Switchtec™ PFX-I 64xG3
Switchtec™ PFX-I 48xG3
Switchtec™ PFX-I 32xG3
Switchtec™ PFX-I 24xG3
Encl
osur
e M
gmt
Proc
esso
r + S
DK
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
Ethe
rnet
10
/100
10/1
0010
/100
NoNo
NoNo
NoNo
NoNo
No10
/100
10/1
0010
/100
NoNo
NoI²C
Mas
ter/S
lave
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Pack
age
Size
(mm
2)37
.5
37.5
37
.5
27
27
27
37.5
37
.5
37.5
27
27
27
37
.5
37.5
37
.5
27
27
27
Tem
p0,
105
0, 1
050,
105
0, 1
050,
105
0, 1
050,
105
0, 1
050,
105
0, 1
050,
105
0, 1
05-4
0 (Ta
) to
105
(Tj)
-40
(Ta) t
o 10
5 (T
j)-4
0 (Ta
) to
105
(Tj)
-40
(Ta) t
o 10
5 (T
j)-4
0 (Ta
) to
105
(Tj)
-40
(Ta) t
o 10
5 (T
j)Ro
HS
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Switc
htec
PSX
, PFX
, PAX
Gen
3, G
en 4
Dev
ice
Com
paris
on
Switchtec™ PFX 96xG4
Switchtec PFX 80xG4
Switchtec PFX 64xG4
Switchtec PFX 48xG4
Switchtec PFX 32xG4
Switchtec PFX 24xG4
Switchtec PFX 100xG4
Switchtec PFX 84xG4
Switchtec PFX 68xG4
Switchtec PFX 52xG4
Switchtec PFX 36xG4
Switchtec PFX 28xG4
Lane
s96
8064
4832
2410
084
6852
3628
Ports
4840
3224
1612
5244
3628
2016
Port
Bifu
rcat
ion
x2/4
/8/1
6x2
/4/8
/16
x2/4
/8/1
6x2
/48/
16x2
/4/8
/16
x2/4
/8/1
6x1
/x2/
4/8/
16x1
/x2/
4/8/
16x1
/x2/
4/8/
16x1
/x2/
4/8/
16x1
/x2/
4/8/
16x1
/x2/
4/8/
16
NTB
s48
4032
2416
1248
4234
2618
16
Virtu
al S
witc
hes
2420
1612
86
2622
1814
108
PCIe
Mul
ticas
tYe
s, 6
4 ov
erlay
s pe
r st
ack
Yes,
64
over
lays
per
stac
kYe
s, 6
4 ov
erlay
s pe
r st
ack
Yes,
64
over
lays
per
stac
kYe
s, 6
4 ov
erlay
s pe
r st
ack
Yes,
64
over
lays
per
stac
kYe
sYe
sYe
sYe
sYe
sYe
s
Dow
nstre
am P
ort
Con
tain
men
tYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
s
Com
plet
ion
Tim
eout
Syn
thes
isYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
s
UEC
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
Hot
Plu
g C
trls
4840
3224
1612
5244
3628
2016
Cus
tom
er
Prog
ram
mab
leNo
NoNo
NoNo
NoNo
NoNo
NoNo
No
Mul
ti-ho
st I/
O
Shar
ing
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
PCIe
Fab
ric
Supp
ort
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
DM
ANo
NoNo
NoNo
NoYe
sYe
sYe
sYe
sYe
sYe
s
Encl
osur
e M
gmt
Proc
esso
r + S
DK
NoNo
NoNo
NoNo
NoNo
NoNo
NoNo
Ethe
rnet
(M)
Yes
Yes
Yes
NoNo
No10
/100
10/1
0010
/100
NoNo
No
I²C M
aste
r/Sla
veYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
s
Pack
age
Size
(m
m)
40x4
040
x40
40x4
029
x29
29x2
929
x29
40x4
040
x40
40x4
029
x29
29x2
929
x29
Tem
p0,
105
0, 1
050,
105
0, 1
050,
105
0, 1
050,
105
0, 1
050,
105
0, 1
050,
105
0, 1
05
RoH
SYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
sYe
s
1 on
ly Eg
ress
Poi
sone
d TL
P bl
ockin
g 2
Traf
fic g
ener
ator
doe
s no
t im
pact
ope
ratio
n of
the
devic
e 3
AVS
not a
vaila
ble
on G
en4
Switc
hes
4 AC
S eq
uiva
lent i
mpl
emen
ted
in P
AX 5
1 lan
e/po
rt on
4 la
nes
Focus Product Selector Guide 79
Term
s an
d D
efini
tions
1 G
bps .
......
......
......
......
......
......
......
109 b
ytes
per
sec
ond
1 KB
......
......
......
......
......
......
......
......
......
......
...10
24 b
ytes
1 Kw
.....
......
......
......
......
......
......
......
......
......
..10
24 w
ords
18F/
PIC
18 ..
......
.16-
bit in
stru
ction
wor
d: 7
5/83
inst
ruct
ions
1 Tb
ps ..
......
......
......
......
......
......
...10
12 b
ytes
per
sec
ond
ADC
......
......
......
......
......
......
...An
alog
to D
igita
l Con
verte
rAD
C2/
ADC
C ...
......
......
......
......
.....A
DC w
ith C
ompu
tatio
nAn
gTM
R ...
......
......
......
......
......
......
......
......
.Ang
ular
Tim
erAU
SART
.....
......
......
. Add
ress
able
Unive
rsal
Sync
hron
ous
As
ynch
rono
us R
eceiv
er T
rans
mitt
erBL
/Bas
elin
e ...
......
12-b
it in
stru
ctio
n w
ord:
33
inst
ruct
ions
BOR/
PBO
R ...
......
......
......
......
......
......
...Br
own
Out
Res
et/
Pr
ogra
mm
able
Brow
n O
ut R
eset
BTLE
......
......
......
......
......
......
......
..Blu
etoo
th® L
ow E
nerg
yC
AN ...
......
......
......
......
......
......
.....C
ontro
ller A
rea
Netw
ork
CC
P/EC
CP
......
......
......
......
......
. Cap
ture
Com
pare
PW
M/
En
hanc
ed C
aptu
re C
ompa
re P
WM
CLC
.....
......
......
......
......
......
......
....C
onfig
urab
le Lo
gic
Cell
CO
G ..
......
......
......
......
.Com
plem
enta
ry O
utpu
t Gen
erat
orC
omp .
......
......
......
......
...Ca
pacit
ive S
ensin
g Im
plem
ente
d
via C
ompa
rato
rC
RC/S
CAN
......
......
......
......
..Cy
clica
l Red
unda
ncy
Chec
k
with
Mem
ory
Scan
ner
CTM
U ..
......
......
......
......
......
......
......
......
mTo
uch®
Sen
sing:
Char
ge T
ime
Mea
sure
men
t Uni
tC
VD ..
......
......
......
......
......
......
......
... Ch
arge
Vol
tage
Divi
de
(C
apac
itive
Sens
ing
Impl
emen
ted
via A
DC)
CW
G ...
......
......
......
.Com
plem
enta
ry W
avef
orm
Gen
erat
orDA
C ...
......
......
......
......
......
......
Digi
tal-t
o-An
alog
Conv
erte
rDO
ZE ...
......
......
......
......
......
......
... Lo
w-P
ower
Doz
e M
ode
DSM
......
......
......
......
......
......
......
....D
ata
Sign
al M
odul
ator
dsPI
C®
DSC
......
......
......
......
......
......
16-b
it Co
re w
ith D
SPEB
L ....
......
......
......
......
......
......
......
......
Enha
nced
Bas
eline
EEPR
OM
.....
......
......
. Elec
trica
lly E
rasa
ble
Prog
ram
mab
le
Read
Onl
y M
emor
yEM
R/En
hanc
ed ..
......
......
......
......
.14-
bit i
nstru
ctio
n w
ord:
49 in
stru
ctio
nsES
D ...
......
......
......
......
......
......
......
Elec
trost
atic
Disc
harg
eEU
SART
......
......
......
..... E
nhan
ced
Unive
rsal
Sync
hron
ous
As
ynch
rono
us R
eceiv
er T
rans
mitt
erEW
DT/W
DT ..
......
......
......
......
Exte
nded
Wat
chdo
g Ti
mer
/
W
atch
dog
Tim
erFl
exE .
......
......
......
......
......
......
......
......
....F
lexi
ble
Ethe
rnet
HC
I/O
.....
......
......
......
......
......
......
......
....H
igh-
Curre
nt I/
OH
EF ...
......
......
......
......
......
......
......
.. Hi
gh-E
ndur
ance
Flas
h
(128
B of
Non
volat
ile D
ata
Stor
age)
HLT
.....
......
......
......
......
......
......
......
..Har
dwar
e Li
mit
Tim
erH
V ....
......
......
......
......
......
......
......
......
......
......
High
Vol
tage
ICD
......
......
......
......
......
......
......
......
......
..In
-Circ
uit D
ebug
ICE .
......
......
......
......
......
......
......
......
....In
-Circ
uit E
mul
atio
nIC
SP™
......
......
......
......
....In
-Circ
uit S
erial
Pro
gram
min
g™ID
E ....
......
......
......
...In
tegr
ated
Dev
elopm
ent E
nviro
nmen
tID
LE ...
......
......
......
......
......
......
......
..Low
-Pow
er Id
le M
ode
Inst
Am
p ...
......
......
......
......
......
..In
stru
men
tatio
n Am
plifie
rLC
D ...
......
......
......
......
......
......
......
...Li
quid
Cry
stal
Disp
layLD
O ..
......
......
......
......
....L
ow D
rop-
Out
Vol
tage
Reg
ulat
orLF
.....
......
......
......
......
......
......
......
......
....L
ow-P
ower
Flas
hLP
BOR .
......
......
......
......
......
Low
-Pow
er B
row
n O
ut R
eset
MI² C
/I² C ...
......
......
......
Mas
ter I
nter
-Inte
grat
ed C
ircui
t Bus
/
Inte
r-Int
egra
ted
Circ
uit B
usM
athA
CC
......
......
......
......
......
......
......
....M
ath
Acce
lerat
orM
id-R
ange
......
......
......
......
......
(Den
oted
as
PIC1
XF1X
XX)
MIP
S ...
......
......
......
......
.....M
illion
Inst
ruct
ions
Per
Sec
ond
MR/
Mid
-Ran
ge ...
......
......
......
......
.14-
bit i
nstru
ctio
n w
ord:
35 in
stru
ctio
nsM
SSP/
SSP
......
......
......
...M
aste
r/Syn
chro
nous
Ser
ial P
ort
(I² C
and
SPI
Per
iphe
ral)
mTo
uch .
......
......
....P
ropr
ietar
y To
uch
Sens
ing
Tech
nolo
gyN
CO
......
......
......
......
......
.Num
erica
lly C
ontro
lled
Osc
illato
rO
p Am
p ...
......
......
......
......
......
......
....O
pera
tiona
l Am
plifie
rO
TN ..
......
......
......
......
......
......
.Opt
ical
Tra
nspo
rt N
etw
ork
OTU
2 ...
......
......
......
......
......
Tran
spor
t sig
nal f
or 1
0 G
bps
OTU
3 ...
......
......
......
......
......
Tran
spor
t sig
nal f
or 4
0 G
bps
OTU
4 ...
......
......
......
......
....T
rans
port
sign
al fo
r 100
Gbp
s PI
C10
/12/
16/1
8 ....
......
......
......
......
......
......
......
.8-b
it Co
rePI
C24
......
......
......
......
......
......
......
......
......
......
.16-
bit C
ore
PIC
32 ...
......
......
......
......
......
......
......
......
......
....3
2-bi
t Cor
ePL
VD ...
......
......
......
.....P
rogr
amm
able
Low
Vol
tage
Det
ect
PMD .
......
......
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2/27/20
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