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Electric Double Layer TransistorIMR
岩佐義宏
東北大学 金属材料研究所
JulyJuly 88--1010, 2009, 2009
非平衡固液界面の電子物性
高エネルギー加速器研究機構高エネルギー加速器研究機構
固体(電子伝導体)
液体(イオン伝導体)
ERLERLサイエンスワークショップサイエンスワークショップ
Electric Double Layer TransistorIMR
Organics, and Nitrides:H. Shimotani, H. T. Yuan, J. T. Ye,(IMR, Tohoku U)
Oxides:M. Kawasaki, K. Ueno, A.Ohtomo, A. Tsukazaki(WPI-AMR, Tohoku U)
LT Physics:T. Nojima, S. Nakamura, H. Aoki, N. Kimura(IMR, Tohoku U)
Acknowledgement
Electric Double Layer TransistorIMR
OUTLINE
はじめに: 電界効果トランジスタ (FET) と電界誘起超伝導
電気2重層トランジスタ (EDLT)
様々な物質への応用
有機半導体
酸化物半導体 ZnO、SrTiO3
イオン液体
Electric Double Layer TransistorIMR
+ + + +
- - - -
Physical control of carrier densityPhysical control of carrier density: Electric field effect: Electric field effect
CapacitorCharge accumulation device
Field Effect Transistor (FET)Current switching device
Invention of Si-MOSFETD. Kahng & M. M. Atalla (1960)
Electric Field Control of Electric Field Control of superconductorsuperconductorR. E. Glover, III & M. D. Sherrill (1960)R. E. Glover, III & M. D. Sherrill (1960)
Dinsulator
semiconductor
S
G
I
ResistanceResistance measurementmeasurementof capacitor electrodesof capacitor electrodes (1906)(1906) Patent of MOSPatent of MOS--FET (1930s)FET (1930s)
Electric Double Layer TransistorIMR
History 1History 1
Electric Field Control of Electric Field Control of TcTc in superconductorin superconductor
R. E. Glover, III and M. D. Sherrill, Phys. Rev. R. E. Glover, III and M. D. Sherrill, Phys. Rev. LettLett. 5, 248 (1960).. 5, 248 (1960).
IndiumTc = 4.1 K, ΔTc = - 0.8 x 10-4 K
Question:Can you increase Tcfrom zero to finite?
Electric Double Layer TransistorIMR
C. H. Ahn, J.-M. Triscone, and J. MannhartNature 423, 1015 (2003).YBa2Cu3O7-δ
History 2History 2Discovery of high Discovery of high TcTc cupratescuprates and its field effectand its field effect
Chemical doping to insulators yields high Tc (1986)
Field-effect in high Tc with chemical aids (1991)
Electric Double Layer TransistorIMR
Solid GateG
DGate insulator
semiconductor
S
300 nm
Our approachOur approach((2004~2004~))
Liquid gate(electric double layer transistor)
Semiconductor
1 nm
Conventional FETConventional FET
G
Weak electric field~1MV/cm< 1 x 1013 cm-2
Strong electric field>10MV/cm~ 1 x 1015 cm-2
+ + + + +
ー - - - -
Electric Double Layer TransistorIMRelectrostatic chemical
Charge Accumulation Devices
ElectrolyticCondenser(Almina)
Li SecondaryBattery
Electric Double LayerCapacitor
100μ1μ 10000μ 1 100 10000Capacitance (F)
Electric Double Layer TransistorIMR
Lithium Ion Secondary BatteryElectric Double Layer Capacitor
Comparison of charge accumulation devices
Electric Double Layer TransistorIMR
Electric Double Layer (EDL)Electric Double Layer Capacitor (EDLC)
-
-+
-++-
+
Ele
ctro
stat
ic P
oten
tial
Electric Double Layer TransistorIMR
Electric Double Layer (EDL)Electric Double Layer Capacitor (EDLC)
-
-+
-++-
+
Ele
ctro
stat
ic P
oten
tial
+ --
+ --
+
+
----
+
+++
EDL( ~1 nm )
ID
Replace one of the electrodes by
EDL-transistor (EDLT)large capacitancelarge charge density
D
S
EDLC on market (Japan Chemicon Inc.)
Electric Double Layer TransistorIMR
S
S n
C6H
13
C6H
13
polythiopheneRR-P3HT
Organic semiconductorSingle crystal, Rubrene
0.5 μm
H. Shimotani et al., APL (2006),JJAP (2007)
Single walled carbon nanotubesSWNT
Application of EDLTs to high density charge accumulation in organic semiconductors
H. Shimotani et al., APL (2005)
H. Shimotani et al., APL (2006)
Electric Double Layer TransistorIMR
応用:イオンゲルをゲートに用いるトランジスタを印刷で作製
C. D. Frisbie et al., Nat. Mater. 7, 900 (2008).
基礎:有機単結晶を用いた低電圧動作
PDMS [3]
Parylene [2]Air [1]
SiO2 [4]
[5][6]
[7]
present EDLT
She
et c
ondu
ctan
ce (
μS)
4
3
2
1
0–80 –60 –40 –20 0
Gate voltage (V)
old EDLTs
(200 nm)(2-4 μm)
(1 μm)(3 μm)
有機トランジスタへの展開
H. Shimotani et al., JJAP 46, 3613 (2007)
Electric Double Layer TransistorIMR
Device fabrication
ScAlMgO4substrate
Mg0.1Zn0.9O(150 nm)
ZnO (700 nm)
Low carrier density and high mobility
μ = 100 cm2V–1s–1
n = 7.7 × 1015 cm–3
ZnO single crystalline thin film
EDL-FET
Tsukazaki et al., APL 88, 152106 (2006)
60 μ
m
220 μm
PhotolithographyIon milling
ZnO
Electric Double Layer TransistorIMR
Device fabrication
ScAlMgO4substrate
Mg0.1Zn0.9O(150 nm)
ZnO (700 nm)
Low carrier density and high mobility
μ = 100 cm2V–1s–1
n = 7.7 × 1015 cm–3
ZnO single crystalline thin film
EDL-FET
Tsukazaki et al., APL 88, 152106 (2006)
ZnO
CH2CH2 O
Polymer electrolytepolyethyleneoxyde
KClO4
([O]/[K] = 20/1)
nTi/Au electrode
Electric Double Layer TransistorIMR
Device fabrication
ScAlMgO4substrate
Mg0.1Zn0.9O(150 nm)
ZnO (700 nm)
Low carrier density and high mobility
μ = 100 cm2V–1s–1
n = 7.7 × 1015 cm–3
ZnO single crystalline thin film
EDL-FET
Tsukazaki et al., APL 88, 152106 (2006)
Electric Double Layer TransistorIMR
Characteristics of ZnO-EDLT
n-type operation
20
15
10
5
020
I D (
μA)
Leak
cur
rent
(μA
)
0 0.8 1.6 2.4 3.2Gate voltage (V)
VDS = 0.1 V
Transfer curve
0 0.2 0.4 0.6 0.8 1
120
80
40
0
Drain voltage (V)I D
(μA
)
VG
(V)3.1
3.0
2.9
2.8
2.7
2.6
Output curve
Electric Double Layer TransistorIMR
Direct measurement of carrier density (Hall effect )
0.8
0.6
0.4
0.2
0
5
4
3
2
1
0
She
et c
ondu
ctan
ce (
mS
)
Car
rier
dens
ity (
1013
cm–2
)0 0.5 1 1.5 2 2.5 3
Gate voltage (V)
ne = Q = CV
Solvent moleculeIon
- - -
+ + +
C ~ 7.8 μF/cm2
EDL
ZnO
5–5 0
VH/I D
(kΩ
)210
–1–2
B (T)
01.423
VG(V)
thickness of EDL ~ 1 nm
(cf. 15 μF/cm2 on Au)
(ε = 10 ε0 for PEO solvent)
H. Shimotani et al. APL 91, 082106 (2007)
Electric Double Layer TransistorIMR
Gate-induced Insulator-metal transition in ZnO
ZnO
H. Shimotani et al. Appl. Phys. Lett. 91, 082106 (2007)
Electric Double Layer TransistorIMR
2.5V
3.5V
2.25V
VG = 2V
2.75V3V
T ( K )
EDLTR
( Ω
/ □)
SrTiO3 / KClO4 / Pt
h / e2
100 300200102
0
106
104
Temperature dependence of resistance in SrTiO3 EDLT
Insulator
Metal
Electric Double Layer TransistorIMRT ( K )
R(
kΩ /□
)0.4
10.80.60.40.20
0.1
0
0.2
0.3I = 30 nA
VG = 3V
μ0H= 0 T
R(
kΩ/ □
)
μ0H ( T )
0.3
0.2
0.1
00.40.20-0.2-0.4
0.4
μ0Hc= 0.08 T
H-dependence
T = 0.02 K
K. Ueno et al., Nat. Mater. 7, 855 (2008)
Electric field-induced superconductivity in SrTiO3
Electric Double Layer TransistorIMR
Ionic Liquid
Polymer Electrolyte
d ~ size of solvent molecule
Solvent + Salt
-
+-
++
-
--
+
d ~ size of cation moleculesmaller than electrolyte
Melt at RT
Two kinds of ionic conductors
-+ + + + + + +
-+
- - ---+ + + +
+ ++ -
- +++ - +-+ - +- +- + +-
Electric Double Layer TransistorIMR
0 0.5 1 1.5 2 2.5 3 3.5
Carrier density from Hall effectusing Ionic Liquid
Ionic Liquid/ZnO
Electrolyte/ZnO [1]
Shee
t car
rier d
ensi
ty (1
014 c
m-2
)
1
2
3
4
Electrolyte/STO[2]
[2] K. Ueno et al., Nat. Mater. 7, 855 (2008)
[1] H. Shimotani et.al.,APL. 91,082106 (2007)
0
Gate voltage (V)
Hongtao Yuan et al., Adv. Funct. Mater. 19, 1046 (2009)
Electric Double Layer TransistorIMR
Ionic conductor
Electronic conductor
Summary非平衡固液界面 + 電界誘起超伝導
Challenge: Increase TcDiscover new superconductors
Multidisciplinary materials science in non- equilibrium states at solid-liquid interfaces
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