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08/10/2018 V3.01
Features:> High brightness surface mount LED.> Based on InGaN / Sapphire technology.> 120° viewing angle.> Small package outline (LxWxH) of 3.2 x 2.8 x 1.8mm.> Qualified according to JEDEC moisture sensitivity Level 2.> Compatible to IR reflow soldering.> Environmental friendly; RoHS compliance.> Compliance to automotive standard; AEC-Q101.
DomiLEDSynonymous with function and performance, the DomiLED series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness.
DATASHEET:
DomiLEDInGaN White : DDW-HJG-F1P3
© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.
Applications:> Automotive: interior applications, eg: switches, telematics,climate control system, dashboard, etc.> White Goods Lighting.> Reading Lamps.
DOMINANTOpto TechnologiesInnovating Illumination
TM
08/10/2018 V3.02
DDW-HJG-XY1-F1H3
DDW-HJG-X2Y-I1L3
DDW-HJG-X2Y-M1P3
White
White
White
120
120
120
1800.0
2240.0
2240.0
Part OrderingNumber
Color ViewingAngle˚
Luminous Intensity @ 20mA IV (mcd) Appx. 1.1
Electrical Characteristics at Tj=25˚C
Part Number
DDW-HJG
Min. (V)Vf @ If = 20mA Appx. 3.1
Max. (V)
2.8 3.3
Typ. (V)
3.0
Optical Characteristics at Tj=25˚C
Min. Typ. Max.
2850.0
3550.0
3550.0
3550.0
4500.0
4500.0
Unit
Absolute Maximum RatingsMaximum Value
DC forward current
Peak pulse current; (tp ≤ 1ms, Duty cycle = 0.1)
Reverse voltage Appx. 6.1
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power Dissipation (at room temp)
Thermal resistance- Real Thermal Resistance Junction / ambient, Rth JA real Junction / solder point, Rth JS real (Mounting on FR4 PCB, pad size >= 16mm2 per pad)
50
125
5
2000
125
-40 … +115
-40 … +125
165
300140
mA
mA
V
V
˚C
˚C
˚C
mW
K/WK/W
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
Vr @ Ir = 10 µA Appx. 6.1
5.0
Min. (V)
08/10/2018 V3.03
DDW, Color Grouping Appx. 2.1
Color Bin Structure
Bin0.24980.20530.24020.21080.22690.21850.25970.22040.25090.22640.23880.23480.27000.23610.26240.24310.25200.2527
CxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCy
0.25890.20000.24980.20530.23880.23480.26820.21460.25970.22040.25090.22640.27750.22920.27000.23610.26240.2431
0.26820.21460.25970.22040.25090.22640.27750.22920.27000.23610.26240.24310.28610.24270.27970.25090.27330.2590
0.25970.22040.25090.22640.24020.21080.27000.23610.26240.24310.25200.25270.27970.25090.27330.25900.26460.2700
1 2 3 4
F1
F2
F3
G1
G2
G3
H1
H2
H3
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
0.18
0.20
0.22
0.24
0.26
0.28
0.30
0.32
0.34
0.36
0.38
0.40
0.42
0.44
0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 0.38
L
12
K
J
H
N
M
3
P
F
I
G
08/10/2018 V3.04
Bin0.27970.25090.27330.25900.26460.27000.28980.26640.28480.27570.27800.28830.30070.28300.29710.29350.29220.30770.31130.29920.30900.31080.30600.32660.32190.31540.32090.32810.31960.34510.33350.31720.33390.33360.33410.34720.34470.33470.34650.35300.34790.3673
CxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCy
0.28610.24270.27970.25090.27330.25900.29500.25680.28980.26640.28480.27570.30450.27170.30070.28300.29710.29350.31380.28620.31130.29920.30900.31080.32310.30080.32190.31540.32090.32810.33390.33360.33410.34720.33450.36540.34650.35300.34790.36730.34980.3863
0.29500.25680.28980.26640.28480.27570.30450.27170.30070.28300.29710.29350.31380.28620.31130.29920.30900.31080.32310.30080.32190.31540.32090.32810.33350.31720.33390.33360.33410.34720.34650.35300.34790.36730.34980.38630.35990.37350.36230.38820.36550.4079
0.28980.26640.28480.27570.27800.28830.30070.28300.29710.29350.29220.30770.31130.29920.30900.31080.30600.32660.32190.31540.32090.32810.31960.34510.33390.33360.33410.34720.33450.36540.34470.33470.34650.35300.34790.36730.35670.35350.35990.37350.36230.3882
1 2 3 4
I1
I2
I3
J1
J2
J3
K1
K2
K3
L1
L2
L3
M1
M2
M3
N1
N2
N3
P1
P2
P3
InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance. Current pulsing should be used for dimming purposes.
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
08/10/2018 V3.05
X1X2Y1Y2
1800.0 ... 2240.02240.0 ... 2850.02850.0 ... 3550.03550.0 ... 4500.0
Luminous Intensity Group at Tj=25˚C
Forward Voltage (V) Appx. 3.1
Vf Binning (Optional)
Vf Bin @ 20mA
Please consult sales and marketing for special part number to incorporate Vf binning.
VH8
VH9
VJ1
2.80 ... 3.00
3.00 ... 3.20
3.20 ... 3.40
Brightness Group Luminous Intensity Appx. 1.1
IV (mcd)
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
08/10/2018 V3.06
Forward Voltage VF (V)
Forw
ard
Cur
rent
I F (m
A)
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Forw
ard
Cur
rent
I F (m
A)
Temperature T(°C)
Maximum Current Vs TemperatureIF=f(T)
Forward Current IF (mA)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Duty Ratio, %
∆Cx,
∆C
yDDW-HJG-F1P3
DOMINANTOpto TechnologiesInnovating Illumination
TM
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 1ms )
Forward Current IF (mA)
Relative Spectral EmissionIrel = f(λ); Tj = 25°C; IF = 20mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Wavelength λ (nm)
0.0
0.5
1.0
1.5
2.0
2.5
0 10 20 30 40 50
Forward Current IF (mA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength λ (nm)
Forw
ard
Cur
rent
I F (m
A)
Maximum Current Vs Temperature IF = f (T)
Temperature T(°C)
0
10
20
30
40
50
60
0 20 40 60 80 100 120
Ts
Ta
Ta = Ambient Temperature Ts = Solder Point Temperature
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
0 5 10 15 20 25 30 35 40 45 50
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C
Forward Current IF (mA)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward Current IV/IV(20mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 20mA
∆Cx
∆Cy
0
10
20
30
40
50
2.6 2.8 3.0 3.2 3.4
Forw
ard
Cur
rent
I F (m
A)
Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.5
1.0
1.5
2.0
2.5
0 10 20 30 40 50
Forward Current IF (mA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength λ (nm)
Forw
ard
Cur
rent
I F (m
A)
Maximum Current Vs Temperature IF = f (T)
Temperature T(°C)
0
10
20
30
40
50
60
0 20 40 60 80 100 120
Ts
Ta
Ta = Ambient Temperature Ts = Solder Point Temperature
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
0 5 10 15 20 25 30 35 40 45 50
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C
Forward Current IF (mA)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward Current IV/IV(20mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 20mA
∆Cx
∆Cy
0
10
20
30
40
50
2.6 2.8 3.0 3.2 3.4
Forw
ard
Cur
rent
I F (m
A)
Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C
Forward Voltage VF (V)
Relative Luminous Intensity Vs Forward CurrentIV/IV(20mA) = f(IF); Tj = 25°C
0.0
0.5
1.0
1.5
2.0
2.5
0 10 20 30 40 50
Forward Current IF (mA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength λ (nm)
Forw
ard
Cur
rent
I F (m
A)
Maximum Current Vs Temperature IF = f (T)
Temperature T(°C)
0
10
20
30
40
50
60
0 20 40 60 80 100 120
Ts
Ta
Ta = Ambient Temperature Ts = Solder Point Temperature
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
0 5 10 15 20 25 30 35 40 45 50
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C
Forward Current IF (mA)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward Current IV/IV(20mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 20mA
∆Cx
∆Cy
0
10
20
30
40
50
2.6 2.8 3.0 3.2 3.4
Forw
ard
Cur
rent
I F (m
A)
Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C
Forward Voltage VF (V)
Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C
0.0
0.5
1.0
1.5
2.0
2.5
0 10 20 30 40 50
Forward Current IF (mA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength λ (nm)
Forw
ard
Cur
rent
I F (m
A)
Maximum Current Vs Temperature IF = f (T)
Temperature T(°C)
0
10
20
30
40
50
60
0 20 40 60 80 100 120
Ts
Ta
Ta = Ambient Temperature Ts = Solder Point Temperature
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
0 5 10 15 20 25 30 35 40 45 50
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C
Forward Current IF (mA)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward Current IV/IV(20mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 20mA
∆Cx
∆Cy
0
10
20
30
40
50
2.6 2.8 3.0 3.2 3.4
Forw
ard
Cur
rent
I F (m
A)
Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.5
1.0
1.5
2.0
2.5
0 10 20 30 40 50
Forward Current IF (mA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength λ (nm)
Forw
ard
Cur
rent
I F (m
A)
Maximum Current Vs Temperature IF = f (T)
Temperature T(°C)
0
10
20
30
40
50
60
0 20 40 60 80 100 120
Ts
Ta
Ta = Ambient Temperature Ts = Solder Point Temperature
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
0 5 10 15 20 25 30 35 40 45 50
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C
Forward Current IF (mA)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward Current IV/IV(20mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 20mA
∆Cx
∆Cy
0
10
20
30
40
50
2.6 2.8 3.0 3.2 3.4
Forw
ard
Cur
rent
I F (m
A)
Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C
Forward Voltage VF (V)
0.0
0.5
1.0
1.5
2.0
2.5
0 10 20 30 40 50
Forward Current IF (mA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
350 400 450 500 550 600 650 700 750 800 850
Wavelength λ (nm)
Forw
ard
Cur
rent
I F (m
A)
Maximum Current Vs Temperature IF = f (T)
Temperature T(°C)
0
10
20
30
40
50
60
0 20 40 60 80 100 120
Ts
Ta
Ta = Ambient Temperature Ts = Solder Point Temperature
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
0 5 10 15 20 25 30 35 40 45 50
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Forward Current ∆Cx, ∆Cy = f(IF);Tj = 25°C
Forward Current IF (mA)
Allo
wab
le F
orw
ard
Cur
rent
I F( m
A )
Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )
Duty Ratio, %
10
100
1000
0.1 1 10 100
Relative Luminous Intensity Vs Forward Current IV/IV(20mA) = f(IF); Tj = 25°C
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Spectral Emission Irel = f(λ); Tj = 25°C; IF = 20mA
∆Cx
∆Cy
0
10
20
30
40
50
2.6 2.8 3.0 3.2 3.4
Forw
ard
Cur
rent
I F (m
A)
Forward Current Vs Forward Voltage IF = f(VF); Tj = 25°C
Forward Voltage VF (V)
Chromaticity Coordinate Shift Vs Forward Current∆Cx, ∆Cy = f(IF);Tj = 25°C
08/10/2018 V3.07
Radiation Pattern
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
Junction Temperature Tj(°C)
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F (
V)
Junction Temperature Tj(°C)
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Junction Temperature Tj(°C)
∆Cx
, ∆C
yChromaticity Coordinate Shift Vs Junction Temperature
∆Cx, ∆Cy = f(Tj); IF = 20mA
08/12/2016 V7.09
InGaN Warm White: DDF-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
Radiation Pattern
Junction Temperature Tj(°C)R
elat
ive
Forw
ard
Volta
ge ∆
V F (V)
Junction Temperature Tj(°C)
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Luminous Intensity Vs Junction TemperatureIV/IV(25°C) = f(Tj); IF = 20mA
Junction Temperature Tj(°C)
∆Cx
, ∆C
yChromaticity Coordinate Shift Vs Junction Temperature
∆Cx, ∆Cy = f(Tj); IF = 20mA
0.270°
90°
80°
0
60°
50°
40°
30° 20°
0.6
0.4
1.0
0.8
10° 0°
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 1300.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F
(V)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 20mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
Relative Luminous Intensity Vs Junction TemperatureIV /IV (25°C) = f(Tj); IV = 20mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 1300.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F
(V)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 20mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
Relative Luminous Intensity Vs Junction TemperatureIV /IV (25°C) = f(Tj); IV = 20mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF =20mA
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
-50 -30 -10 10 30 50 70 90 110 130
∆Cx
∆Cy
-0.030
-0.025
-0.020
-0.015
-0.010
-0.005
0.000
0.005
0.010
0.015
0.020
0.025
0.030
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e W
avel
engt
h ∆λ
dom
(nm
)
Relative Wavelength Vs Junction Temperature∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Junction Temperature∆Cx, ∆Cy = f(Tj); IF = 20mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 130 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F
(V)
Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF = 20mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-50 -30 -10 10 30 50 70 90 110 130 150
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e W
avel
engt
h ∆λ
dom
(nm
) Relative Wavelength Vs Junction Temperature
∆λdom = λdom - λdom (25°C) = f(Tj); IF = 50mA
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA
Junction Temperature Tj(°C)
Junction Temperature Tj(°C)
Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 20mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
∆Cx
∆Cy
Items to check: 1. Rated Current in each graph title 2. Relative value=1 @ rated current 3. Typ Vf @ rated current 4. Relative value=1 @ 25C degree 5. Max value in each graph
-0.030
-0.025
-0.020
-0.015
-0.010
-0.005
0.000
0.005
0.010
0.015
0.020
0.025
0.030
-50 -30 -10 10 30 50 70 90 110 130 150
∆Cx
∆Cy
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA (Nichia)
Junction Temperature Tj(°C)
Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF =20mA
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 130 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e Fo
rwar
d Vo
ltage
∆V F
(V)
Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF = 20mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-50 -30 -10 10 30 50 70 90 110 130 150
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e W
avel
engt
h ∆λ
dom
(nm
)
Relative Wavelength Vs Junction Temperature ∆λdom = λdom - λdom (25°C) = f(Tj); IF = 50mA
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA
Junction Temperature Tj(°C)
Junction Temperature Tj(°C)
Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 20mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
∆Cx
∆Cy
Items to check: 1. Rated Current in each graph title 2. Relative value=1 @ rated current 3. Typ Vf @ rated current 4. Relative value=1 @ 25C degree 5. Max value in each graph
-0.030
-0.025
-0.020
-0.015
-0.010
-0.005
0.000
0.005
0.010
0.015
0.020
0.025
0.030
-50 -30 -10 10 30 50 70 90 110 130 150
∆Cx
∆Cy
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA (Nichia)
Junction Temperature Tj(°C)
Relative Luminous Intensity Vs Junction TemperatureIV/IV(25°C) = f(Tj); IF = 20mA
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
0.5
-50 -30 -10 10 30 50 70 90 110 130 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -30 -10 10 30 50 70 90 110 130 R
elat
ive
Forw
ard
Volta
ge ∆
V F (V
)
Relative Forward Voltage Vs Junction Temperature ∆VF = VF - VF(25°C) = f(Tj); IF = 20mA
Junction Temperature Tj(°C) Junction Temperature Tj(°C)
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-50 -30 -10 10 30 50 70 90 110 130 150
-0.050
-0.040
-0.030
-0.020
-0.010
0.000
0.010
0.020
0.030
0.040
0.050
-50 -30 -10 10 30 50 70 90 110 130
Rel
ativ
e W
avel
engt
h ∆λ
dom
(nm
)
Relative Wavelength Vs Junction Temperature ∆λdom = λdom - λdom (25°C) = f(Tj); IF = 50mA
∆Cx,
∆C
y Chromaticity Coordinate Shift Vs Junction Temperature
∆Cx, ∆Cy = f(Tj); IF = 20mA
Junction Temperature Tj(°C)
Junction Temperature Tj(°C)
Relative Luminous Intensity Vs Junction Temperature IV /IV (25°C) = f(Tj); IV = 20mA
Rel
ativ
e Lu
min
ous
Inte
nsity
I rel
∆Cx
∆Cy
Items to check: 1. Rated Current in each graph title 2. Relative value=1 @ rated current 3. Typ Vf @ rated current 4. Relative value=1 @ 25C degree 5. Max value in each graph
-0.030
-0.025
-0.020
-0.015
-0.010
-0.005
0.000
0.005
0.010
0.015
0.020
0.025
0.030
-50 -30 -10 10 30 50 70 90 110 130 150
∆Cx
∆Cy
∆Cx,
∆C
y
Chromaticity Coordinate Shift Vs Junction Temperature ∆Cx, ∆Cy = f(Tj); IF = 20mA (Nichia)
Junction Temperature Tj(°C)
08/10/2018 V3.08
DomiLED • InGaN White: DDW-HJG Package Outlines
Note: Package is Pb-free.
Materials
Lead Frame
Package
Encapsulant
Soldering Leads
Materials
Cu Alloy With Ag Plating
High temperature resistant plastic, PPA
Silicone
Sn Plating
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
InGaN Warm White: DDF-LJG
08/12/2016 V7.010
DomiLED • InGaN Warm White: DDF-LJG Package Outlines
Material
Material
Lead-frame
Package
Encapsulant Soldering Leads
Cu Alloy With Ag Plating
High Temperature Resistant Plastic, PPA
Silicone Resin
Sn-Sn Plating
DOMINANTOpto TechnologiesInnovating Illumination
TM
Note : Primary thermal path is through Cathode lead of LED package.
Note: Primary thermal path is through Cathode Lead of LED package.
08/10/2018 V3.09
Recommended Solder Pad
09/12/2016 PV3.09
Recommended Solder Pad
DDW-HZKG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM Preliminary DraftThis specification does not constitute a final offer
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
08/10/2018 V3.010
Taping and orientation
• Reels come in quantity of 2000 units.• Reel diameter is 180 mm.
09/12/2016 PV3.010
Taping and orientation
• Reels come in quantity of 2000 units.• Reel diameter is 180 mm.
DDW-HZKG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM Preliminary DraftThis specification does not constitute a final offer
09/12/2016 PV3.010
Taping and orientation
• Reels come in quantity of 2000 units.• Reel diameter is 180 mm.
DDW-HZKG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM Preliminary DraftThis specification does not constitute a final offer
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
08/10/2018 V3.011
Packaging Specification
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
08/12/2016 V7.013
Packaging Specification
InGaN Warm White: DDF-LJGDOMINANTOpto TechnologiesInnovating Illumination
TM
08/10/2018 V3.012
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
Packaging Specification
Average 1pc DomiLED 1 completed bag (2000pcs)
Weight (gram)Weight (gram) 0.034 240 ± 10
Dimensions (mm)
190 ± 10Weight (gram)Packing Box 210 x 210 x 16
CardboardBoxDOMINANT
TM
Dimensions (mm) Empty BoxWeight (kg)
Super Small
Small
Medium
Large
For DomiLED
Reel / BoxCardboard BoxSize
325 x 225 x 190
325 x 225 x 280
570 x 440 x 230
570 x 440 x 460
0.38
0.54
1.46
1.92
9 reels MAX
15 reels MAX
60 reels MAX
120 reels MAX
Barcode Label
Barcode Label
Packing Sealing Label
Moisture sensitivity level
Moisture absorbent material +Moisture indicator
The reel, moisture absorbent material and moisture indicator aresealed inside the moisture proof foil bag
Reel
Barcode label
Label
(L) Lot No : lotno
(P) Part No : partno
(C) Cust No : partno
(G) Grouping : group
(Q) Quantity : quantity
(D) D/C : date code
(S) S/N : serial no
DOMINANT Opto TechnologiesML TEMP2 260˚CRoHS Compliant
Made in Malaysia
08/10/2018 V3.013
Time (sec)0 50 100 150 200
300
250
225
200
175
150
125
100
75
50
25
275
Tem
pera
ture
(˚C
)
Classification Reflow Profile (JEDEC J-STD-020C)
Ramp-up3˚C/sec max.
255-260˚C10-30s
60-150s
Ramp-down
6˚C/secmax.
Preheat 60-180s
480s max
217˚C
Recommended Pb-free Soldering Profile
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
08/10/2018 V3.014
Appendix
1) Brightness:
1.1 Luminous intensity is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded
uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).
1.2 Luminous flux is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded
uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).
1.3 Radiant intensity is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded
uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).
1.4 Radiant flux is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded uncertainty
of ± 11 % (according to GUM with a coverage factor of k=3).
2) Color:
2.1 Chromaticity coordinate groups are measured at current pulse 25 ms(typ) with an internal reproducibility of ± 0.005 and
an expanded uncertainty of ± 0.01 (accordingly to GUM with a coverage factor of k=3).
2.2 Dominant wavelength is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 0.5nm and an
expanded uncertainty of ± 1nm (accordingly to GUM with a coverage factor of k=3).
3) Voltage:
3.1 Forward Voltage, Vf is measured when a current pulse of 8 ms(typ) with an internal reproducibility of ± 0.05V and an
expanded uncertainty of ± 0.1V (accordingly to GUM with a coverage factor of k=3).
4) Typical Values:
4.1 At special conditions of LED manufacturing processes, typical data or calculated correlations of technical parameters
only reflect the statistical figures. But not necessarily correspond to the actual parameters of each single product, which
could differ from the typical data or calculated correlations or the typical characteristic line. These typical data may
change whenever technical improvements happen.
5) Tolerance of Measure
5.1 Unless otherwise noted in drawing, tolerances are specified with ± 0.1 and dimension are specifiec in mm.
6) Reverse Voltage:
6.1 Not designed for reverse operation. Continuous reverse voltage can cause migration and LED damage.
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
Revision History
NOTE
All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT
Opto Technologies does not assume any liability arising out of the application or use of any product described herein.
DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function
or design.
DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems
without the express written approval from the Managing Director of DOMINANT Opto Technologies.
Page Subjects Date of Modification
08/10/2018 V3.015
-
12, 14
8
Initial release
Update Packaging SpecificationUpdate Appendix
Typo error on Material
18 Aug 2017
06 Sep 2018
08 Oct 2018
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
About Us
DOMINANT Opto Technologies is a dynamic company that is amongst the world’s leading automotive LED manu-facturers. With an extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing and development capabilities have become a trusted and reliable brand across the globe. More in-formation about DOMINANT Opto Technologies, a ISO/TS 16949 and ISO 14001 certified company, can be found under http://www.dominant-semi.com.
Please contact us for more information:
DOMINANT Opto Technologies Sdn. BhdLot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia.Tel: +606 283 3566 Fax: +606 283 0566E-mail: sales@dominant-semi.com
DDW-HJG-F1P3DOMINANTOpto TechnologiesInnovating Illumination
TM
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