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1
IPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
1 2
tab
3
IPAK
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
*1
*2
*1: Internal body diode
*2: Integrated ESD diode
MOSFET950VCoolMOSªP7SJPowerDeviceThelatest950VCoolMOS™P7seriessetsanewbenchmarkin950Vsuperjunctiontechnologiesandcombinesbest-in-classperformancewithstateoftheartease-of-use,resultingfromInfineon’sover18yearspioneeringsuperjunctiontechnologyinnovation.
Features•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss•Best-in-classIPAKRDS(on)•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V•IntegratedZenerDiodeESDprotection•Best-in-classCoolMOS™qualityandreliability•Fullyoptimizedportfolio
Benefits•Best-in-classperformance•Enablinghigherpowerdensitydesigns,BOMsavingsandlowerassemblycosts•Easytodriveandtoparallel•BetterproductionyieldbyreducingESDrelatedfailures•Lessproductionissuesandreducedfieldreturns•Easytoselectrightpartsforfinetuningofdesigns
PotentialapplicationsRecommendedforflybacktopologiesforLEDLighting,lowpowerChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower.AlsosuitableforPFCstageinConsumerandSolarapplications.
ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 950 V
RDS(on),max 1.2 Ω
Qg,typ 15 nC
ID 6 A
Eoss @ 500V 1.3 µJ
VGS(th),typ 3 V
ESD class (HBM) 2 -
Type/OrderingCode Package Marking RelatedLinksIPU95R1K2P7 PG-TO 251-3 95R1K2P7 see Appendix A
2
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
1MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
63.7 A TC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 16 A TC=25°C
Avalanche energy, single pulse EAS - - 11 mJ ID=0.7A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.14 mJ ID=0.7A; VDD=50V; see table 10
Application (Flyback) relevantavalanche current, single pulse3) IAS - 3.0 - A measured with standard leakage
inductance of transformer of 10µH
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 52 W TC=25°CStorage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - - Ncm -
Continuous diode forward current IS - - 4.1 A TC=25°CDiode pulse current2) IS,pulse - - 16 A TC=25°C
Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=1.4A,Tj=25°C see table 8
Maximum diode commutation speed diF/dt - - 50 A/µs VDS=0...400V,ISD<=1.4A,Tj=25°C see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.52) Pulse width tp limited by Tj,max3) For further explanation please read AN - CoolMOSTM 700V P7 & 950V P74) Identical low side and high side switch with identical RG
4
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 2.4 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambientfor SMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
5
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 950 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.14mA
Zero gate voltage drain current IDSS --
-10
1- µA VDS=950V,VGS=0V,Tj=25°C
VDS=950V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
1.032.29
1.2- Ω VGS=10V,ID=2.7A,Tj=25°C
VGS=10V,ID=2.7A,Tj=150°C
Gate resistance RG - 1 - Ω f=250kHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 478 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 7 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energyrelated1) Co(er) - 12 - pF VGS=0V,VDS=0...400V
Effective output capacitance, timerelated2) Co(tr) - 120 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 7 - ns VDD=400V,VGS=13V,ID=2.7A,RG=10.2Ω;seetable9
Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=2.7A,RG=10.2Ω;seetable9
Turn-off delay time td(off) - 36 - ns VDD=400V,VGS=13V,ID=2.7A,RG=10.2Ω;seetable9
Fall time tf - 12 - ns VDD=400V,VGS=13V,ID=2.7A,RG=10.2Ω;seetable9
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 2 - nC VDD=760V,ID=2.7A,VGS=0to10VGate to drain charge Qgd - 5 - nC VDD=760V,ID=2.7A,VGS=0to10VGate charge total Qg - 15 - nC VDD=760V,ID=2.7A,VGS=0to10VGate plateau voltage Vplateau - 4.4 - V VDD=760V,ID=2.7A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
6
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.7A,Tj=25°C
Reverse recovery time trr - 560 - ns VR=400V,IF=1.4A,diF/dt=50A/µs;see table 8
Reverse recovery charge Qrr - 3 - µC VR=400V,IF=1.4A,diF/dt=50A/µs;see table 8
Peak reverse recovery current Irrm - 8 - A VR=400V,IF=1.4A,diF/dt=50A/µs;see table 8
7
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
10
20
30
40
50
60
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
DC
10 ms
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-110-2
10-1
100
101
0.5
0.050.02
0.2
0.1
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
8
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
3
6
9
12
20 V10 V
8 V
7 V6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
2
4
6
8
20 V
10 V8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 3 61.400
1.900
2.400
2.900
3.400
4 V 4.5 V
5.5 V
6 V
10 V
20 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [no
rmalized]
-50 -25 0 25 50 75 100 125 1500.5
1.0
1.5
2.0
2.5
RDS(on)=f(Tj);ID=2.7A;VGS=10V
9
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
3
6
9
12
25 °C
150 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 5 10 15 200
2
4
6
8
10
12
120 V 760 V
VGS=f(Qgate);ID=2.7Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
3
6
9
12
EAS=f(Tj);ID=0.7A;VDD=50V
10
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-50 -25 0 25 50 75 100 125 150850
900
950
1000
1050
1100
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 50010-1
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 200 400 600 800 10000
1
2
3
4
5
Eoss=f(VDS)
11
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
5TestCircuits
Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
12
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
6PackageOutlines
33N
L2
L 8.89
0.89 0.035
0.3509.65
1.37 0.054
0.380
4.57
2.29
MILLIMETERS
A1
b4
b2
b
A
DIM
D1
E
E1
c2
D
e1
e
c
0.90
2.16
0.64
0.65
4.95
MIN
0.46
5.97
5.04
6.35
4.70
0.46
0.035
0.025
0.085
0.185
0.250
0.198
0.235
0.018
0.018
0.195
0.026
m
1.14
0.89
2.41
1.15
5.50
MAX
0.89
6.22
5.77
6.73
5.21
0.60
j
INCHES
0.180
0.090
MIN
0.045
0.035
MAX
0.095
0.205
0.265
0.227
0.245
0.035
0.024
0.217
0.045
m
2.0
EUROPEAN PROJECTION
ISSUE DATE
SCALE
0
4mm
0
2.0
REVISION
01-04-2016
04
DOCUMENT NO.
Z8B0003330
1.90 0.0752.29 0.090L1
c
Figure1OutlinePG-TO251-3,dimensionsinmm/inches
13
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
7AppendixA
Table11RelatedLinks
• IFXCoolMOSP7Webpage:www.infineon.com
• IFXCoolMOSP7applicationnote:www.infineon.com
• IFXCoolMOSP7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
14
950VCoolMOSªP7SJPowerDeviceIPU95R1K2P7
Rev.2.0,2018-06-01Final Data Sheet
RevisionHistoryIPU95R1K2P7
Revision:2018-06-01,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2018-06-01 Release of final version
TrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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PublishedbyInfineonTechnologiesAG81726München,Germany©2018InfineonTechnologiesAGAllRightsReserved.
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