Application of Diamond Sensors at FLASH M.-E. Castro-Carballo, H. Henschel, A. Ignatenko, W. Lange,...

Preview:

DESCRIPTION

3 FLASH overview 1GeV maximum electron beam energy Wavelength down to 6.5 nm 10 fs pulses Peak current 1-2 kA High-gain Free Electron Laser VUV and soft X-ray regime Self-Amplified Spontaneous Emission (SASE) mode

Citation preview

Application of Diamond Sensors Application of Diamond Sensors at FLASHat FLASH

M.-E. Castro-Carballo, H. Henschel, M.-E. Castro-Carballo, H. Henschel, A. IgnatenkoA. Ignatenko, W. , W. Lange, O. Novgorodova, W. Lohmann, R. Schmidt, S. Lange, O. Novgorodova, W. Lohmann, R. Schmidt, S.

SchuwalowSchuwalow

DESY, Zeuthen

June 29, 2009

2222

OverviewOverview

FLASH overviewFLASH overviewMotivation for BHM placementMotivation for BHM placementBHMBHM

Outlook Outlook SensorsSensors

Test at PITZTest at PITZResultsResults

SummarySummary

33

FLASH overviewFLASH overview

1GeV maximum electron beam energy

Wavelength down to 6.5 nm10 fs pulses

Peak current 1-2 kA

High-gain Free Electron LaserVUV and soft X-ray regime

Self-Amplified Spontaneous Emission (SASE) mode

44

Motivation for BHM placementMotivation for BHM placement

BPM9Stripline

BPM15Button

WINDOW withTi-chamber SWEEPER

RD13 (HSK)QUAD

Q10 (QC)QUAD

Q11 (QC)

Chamber withpump port & bellowDUMP

Dump Vacuum Section

2879mm 2879mm

STEERER, H7 to bend plane (CV)

DIPOLE + TrimD6 (TDC)

FLASH beam dump line

Vacuum leak

New beam position diagnostic tools are needed

44

55

OutlookOutlook

55

Beam Halo MonitorBeam Halo Monitor

Electron beam pipe

BHM sensors

Air BPM

6666

SensorsSensors

1. pCVD diamond produced by Diamond Detectors Ltd. Dimensions 10×10×0.3 mm3

Metallization: 50/50/200 nm Ti/Pt/Au

2. Single crystal sapphire (Al2O3) produced by CRYSTAL GmbH Dimensions 10×10×0.3 mm3

Metallization: 50/50/200 nm Al/Ti/Au

The sensors will be operated like solid-state ionization chambers

7777

Test at PITZTest at PITZ pCVD diamond Dimensions 12×12×0.5 mm3

Metallization: 10×10 mm2 Ti/Pt/Au

WS2

0.5 m

3 m 25 m

45 m

88

Plan of measurements

1. Electromagnetic Impact (EMI) investigation

Sensor without bias. Scan over different bunch charges at parking position; x-position scans at certain bunch intensity.

2. Signal size measurements

Biased sensor in the beam center. Measurements of the signal size over bunch intensity at different bias voltages. Scans of the beam profile (focused and unfocused beam).

99

No bias, parking position No bias, x=-5mm

100V bias voltage, parking positionBunch charge 100pC

ResultsResults

1010

Beam profile on High2scr1

Imain=295A Imain=345A

xRMS=0.93 mmyRMS=1.30 mm

xRMS=3.36 mmyRMS=3.29 mm

appr. position and dimensions of the diamond sensor

11111111

Imain=295A Imain=345A

Signal from the diamond sensor

Bunch train trigger

Signal

1212

1313

Expected charge produced in diamond by 10 pC beam

~ 230 nC

1 a.u. ~ 1 nC

1414

Summary

1. Tests with 1 pCVD diamond sensor were carried out at PITZ (Photo Injector Test facility Zeuthen).

2. The diamond was operated in the bunch charge range 1 pC to 1 nC

3. Clear dependence of the signal on the bunch charge was observed

4. Beam profiles for defocused and focused beam were measured

5. EMI signals for unbiased sensor were small in comparison with the signals from biased sensor

6. 4 pCVD diamonds and 4 artificial sapphires will be operated in real accelerator conditions at FLASH

Recommended