A Ku-Band Interference-Rejection CMOS Low-Noise Amplifier Using Current-Reused Stacked Common-Gate...

A Ku-Band Interference-Rejection CMOSLow-Noise Amplifier Using Current-Reused

Stacked Common-Gate Topology

Adviser : Zhi-Ming Lin

Postgraduate : Chia-Wei Chang

Wen-Lin Chen, Sheng-Fuh Chang, Guo-Wei Huang, Yuh-Sheng Jean and Ta-Hsun Yeh

Microwave and Wireless Components Letters, IEEE Volume 17,  Issue 10,  Oct. 2007 p.p718 - 720

Outline

Introduction

Circuit Design

Measurement Results

Conclusion

Introduction

With the rapid growth of wireless and mobile communications, wireless radios require effective interference and image rejection.

To rejection the image interference of wireless radio, the LNA with its followed interference-rejection (IR) BPF will be used.

Circuit Design

Fig1.Schematic diagram of the proposed IR LNA

Two common-gate stages are stacked together as a current-reused stacked common-gate topology

Fig2.small-signal model

Measurement Resultspower gain is

10.8 dB at 15GHz

NF is 2.6 dB at 15GHz

The measured power gain is 10.8 dB at 15GHz

The IR is 38.5dB due to a transmission zero is generated at

24GHz

Microphotograph of the LNA.

TABLE

COMPARISON OF CMOS LNAS OF THIS WORK AND REPORTED WORKS IN LITERATURE

A UWB CMOS LNA has been implemented in a 0.13 -μm CMOS process.

Power gain of 10.8 dB

23.3-dB gain control range at 15 GHz

38.5-dB rejection on interference at 24 GHz

A current-reused stacked common-gate LNA is proposed for high IR, wide gain control range, and low dc power consumption at Ku-band.

Conclusion

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pp. 17–22, Jan. 2006.

Thank You For Your Attention