3D TCAD Simulation of GaN-based LED - Crosslight...

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3D TCAD Simulation of

GaN-based LED

Content

Advanced physical models 3D TCAD examples Summary

Advanced physical models for MQW

k.p based quantum mechanical solver. Self-consistent iteration between quantum well solution

and drift-diffusion solutions. Polarization charge model including piezoelectric and

spontaneous charges.

State of the art nitride material data macro incorporating latest understanding of mechanisms leading to LED efficiency droop.

Self-consistent coupling of drift-diffusion equation solver and thermal/heat-flow solver.

Start of the art 3D TCAD tools for LED

User-friendly GUI LayerBuilder used to set up MQW layer structures.

Mask data (usually in GDS format) are used to construct

the 3D geometry. Advanced process simulator CSuprem is used to generate the 3D mesh and doping profile.

Efficient and convergent device simulator APSYS is used to simulate electrical behavior (such as IQE) and the thermal behavior.

Optionally Crosslight Optowizard may be used to model the optical extraction behavior with raytracing or FDTD.

MQW layer design using LayerBuilder

Using mask data for mesa and contact design

Example 1: Corner side contact LED

3D voltage drop within

the MQW LED

3D profile of current

magnitude within the

InGaN/AlGaN MQW LED

3D distribution of

temperature due

to self-heating

3D distribution of z-

component of current

within the

InGaN/AlGaN MQW

Example 1: corner side contact LED

Self-consistent solution of quantum

states at high injection condition

Example 2: LED with star-shaped top contact

3D current

distribution plot

with top layers

removed and

MQW layer

exposed.

Insert: quantum states at 0.5A

Example 3: LED with spiral top contact

3D current (z-

component) plot

with top layer

removed and MQW

layers exposed.

Positive

surface fix

charge

mapped

onto 3D

Negative

surface fix

charge

mapped

onto 3D

Summary

Comprehensive 3D TCAD simulation provided by CSuprem and APSYS packages for MQW LED.

Results range from quantum levels, optical transition

energies, to 3D temperature and current distribution. Suitable for practical device optimization with typical

simulation time ranging from 20 minutes to several hours depending on the structural complexity.

3D TCAD Simulation of GaN-based LED - Crosslight...

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